Flexible thermoelectric thin films offer a promising avenue for the development of portable and sustainable flexible power supplies.However,a lack of thin films with excellent performance restricts their application i...Flexible thermoelectric thin films offer a promising avenue for the development of portable and sustainable flexible power supplies.However,a lack of thin films with excellent performance restricts their application in flexible thermoelectric devices.In this study,high-performance BiSbTe films are successfully prepared using a combination of magnetron sputtering and thermal diffusion.By optimizing carrier concentration to~4.47×10^(19)cm^(−3)and simultaneously realizing high carrier mobility of>120 cm^(2)·V^(−1)·s^(−1),an impressive room-temperature power factor of 24.13μW·cm^(−1)·K^(−2)is achieved in a Bi_(0.4)Sb_(1.6)Te_(3)thin film.The flexible Bi_(0.4)Sb_(1.6)Te_(3)thin film also demonstrates excellent bending resistance and stability(ΔR/R_(0)<5%,ΔS/S_(0)<5%,andΔS^(2)σ/S_(0)^(2)σ_(0)<10%)after 1000 bending cycles at a minimum bending radius of 6 mm.A flexible thin-film thermoelectric device assembled with p-type Bi_(0.4)Sb_(1.6)Te_(3)legs achieves a remarkable power output of~82.15 nW and a power density of~547.68μW·cm^(−2)under a temperature difference of 20 K.展开更多
基金supported by the Natural Science Foundation of Shandong Province(No.ZR2023ME001),China Postdoctoral Science Foundation(No.2023M732609)the Doctoral Research Initiation Fund of Weifang University(No.2023BS01).
文摘Flexible thermoelectric thin films offer a promising avenue for the development of portable and sustainable flexible power supplies.However,a lack of thin films with excellent performance restricts their application in flexible thermoelectric devices.In this study,high-performance BiSbTe films are successfully prepared using a combination of magnetron sputtering and thermal diffusion.By optimizing carrier concentration to~4.47×10^(19)cm^(−3)and simultaneously realizing high carrier mobility of>120 cm^(2)·V^(−1)·s^(−1),an impressive room-temperature power factor of 24.13μW·cm^(−1)·K^(−2)is achieved in a Bi_(0.4)Sb_(1.6)Te_(3)thin film.The flexible Bi_(0.4)Sb_(1.6)Te_(3)thin film also demonstrates excellent bending resistance and stability(ΔR/R_(0)<5%,ΔS/S_(0)<5%,andΔS^(2)σ/S_(0)^(2)σ_(0)<10%)after 1000 bending cycles at a minimum bending radius of 6 mm.A flexible thin-film thermoelectric device assembled with p-type Bi_(0.4)Sb_(1.6)Te_(3)legs achieves a remarkable power output of~82.15 nW and a power density of~547.68μW·cm^(−2)under a temperature difference of 20 K.
基金National Plan for Science,Technology and Innovation(MAARIFAH)King Abdulaziz City for Science and Technology,Kingdom of Saudi Arabia,Award Number(11-NAN1913-02)
