High-temperature piezoelectric ceramics are critical for aerospace and other advanced applications,yet achieving high sensitivity and stability under elevated temperatures remains challenging.In this study,we employ a...High-temperature piezoelectric ceramics are critical for aerospace and other advanced applications,yet achieving high sensitivity and stability under elevated temperatures remains challenging.In this study,we employ a multi-element co-doping strategy combined with domain engineering to significantly enhance the piezoelectric performance and Curie temperature of Bi_(4)Ti_(3)O_(12)(BIT)-based ceramics.Using a solid-state reaction method,W^(6+)/Nb^(5+)/Ta^(5+)/Sb^(3+)non-equivalently co-doped BIT ceramics were synthesized,achieving a high piezoelectric coefficient(d33)of 35 pC N^(-1),an elevated Curie temperature of 687℃,and an increased resistivity of 2.9×10^(6)Ωcm at an optimal doping level of x=0.02.This study further reveals the impact of poling conditions on domain structure,providing new insights for enhancing piezoelectric properties through domain configuration.A second high-voltage,short-duration poling process promotes the formation of large domains,underscoring the role of domain rearrangement in augmenting piezoelectric activity.This work demonstrates the potential of BIT-based ceramics in hightemperature sensing and precision actuation applications,presenting a novel strategy for designing high-performance piezoelectric materials for extreme environments.展开更多
TiO2/Bi4 Ti3 O12 hybrids have been widely prepared as promising photocatalysts for decomposing organic contaminations.However,the insufficient visible light absorption and low charge separation efficiency lead to thei...TiO2/Bi4 Ti3 O12 hybrids have been widely prepared as promising photocatalysts for decomposing organic contaminations.However,the insufficient visible light absorption and low charge separation efficiency lead to their poor photocatalytic activity.Herein,a robust methodology to construct novel TiO2/Bi4 Ti3 O12/MoS2 core/shell structures as visible light photocatalysts is presented.Homogeneous bismuth oxyiodide(BiOI) nanoplates were immobilized on electrospun TiO2 nanofiber surface by successive ionic layer adsorption and reaction(SILAR) method.TiO2/Bi4 Ti3 O12 core/shell nanofibers were conveniently prepared by partial conversion of TiO2 to high crystallized Bi4 Ti3 O12 shells through a solid-state reaction with BiOI nanoplates,which is accompanied with certain transition of TiO2 from anatase to rutile phase.Afterwards,MoS2 nanosheets with several layers thick were uniform decorated on the TiO2/Bi4 TiO3 O12 fiber surface resulting in TiO2/Bi4 Ti3 O12/MoS2 structures.Significant enhancement of visible light absorption and photo-generated charge separation of TiO2/Bi4 Ti3 O12 were achieved by introduction of MoS2.As a result,the optimized TiO2/Bi4 Ti3 O12/MoS2-2 presents 60% improvement for photodegrading RhB after 120 min irradiation under visible light and 3 times higher of apparent reaction rate constant in compared with the TiO2/Bi4 Ti3 O12.This synthetic method can also be used to establish other photocatalysts simply at low cost,therefore,is suitable for practical applications.展开更多
Alloyed-type anode materials with high-energy density for lithium and sodium ion batteries attracted much attention of the researchers. However, substantial volume expansion of these materials in the devices during re...Alloyed-type anode materials with high-energy density for lithium and sodium ion batteries attracted much attention of the researchers. However, substantial volume expansion of these materials in the devices during repeated electrochemical process leads to fast capacity fading and hinders their further practical application. Nanotechnology could act as a useful tool to effectively address the issue. Herein, lotus-stalk Bi4Ge3O12 nanosheets vertically grown on the nickel foam (denoted as Bi4Ge3O12 NSs@NF) were prepared via a straight-forward solvothermal method. Benefiting from their three dimensional (3D) conductive framework and two dimensional (2D) lotus-stalk Bi4Ge3O12 nanosheet structure, as anode materials of lithium-ion batteries (LIBs) and sodium-ion batteries (NIBs), the electrochemical performances of Bi4Ge3O12 NSs@NF were greatly enhanced as a result of mitigating the huge volume variations during cycles. The Bi4Ge3O12 NSs@NF electrodes delivered a high reversible capacity of 1033.1 mAh/g for the first cycle and exhibited 68.6%capacity retention of after 88 cycles at 0.10 A/g in the voltage window of 0.01~3.0 V versus Li/Li+. In the test of NIBs, the lotus-stalk Bi4Ge3O12 composite electrodes still stored Na+as high as 332.3 mAh/g at 0.10 A/g over 100 sodiation/desodiation repeating cycles.展开更多
The Bi_4Ti_3O_(12)/g-C_3N_4 composites with microsheet and nanosheet structure were prepared through facile ultrasonic-assisted method. The SEM and TEM results suggested that the nanosheets g-C_3N_4 were stacked on th...The Bi_4Ti_3O_(12)/g-C_3N_4 composites with microsheet and nanosheet structure were prepared through facile ultrasonic-assisted method. The SEM and TEM results suggested that the nanosheets g-C_3N_4 were stacked on the surface of regular Bi_4Ti_3O_(12) sheets. Comparing with pure Bi_4Ti_3O_(12) and g-C_3N_4, the Bi_4Ti_3O_(12)/g-C_3N_4 composites showed significant enhancement in photocatalytic efficiency for the degradation of RhB in solution. With the mass ratio of g-C_3N_4 increasing to 10 wt%, the Bi_4Ti_3O_(12)/g-C_3N_4-10% presented the best photocatalytic activity. Its photocatalysis reaction constant was approximately 2 times higher than the single component Bi_4Ti_3O_(12) or g-C_3N_4. Meanwhile, good stability and durability for the Bi_4Ti_3O_(12)/g-C_3N_4-10% were confirmed by the recycling experiment and FT-IR analysis. The possible mechanism for the improvements was the matched band positions and the effective separation of photo-excited electrons(e-) and holes(h+). Furthermore, based on the results of active species trapping, photo-generated holes(h+) and superoxide radical(·O2-) could be the main radicals in reaction.展开更多
Inter-growth bismuth layer-structured ferroelectrics（BLSFs）, Bi_4Ti_3O_（12）-Na_（0.5）Bi_（4.5）Ti_4O_（15）（BIT-NBT）, were successfully synthesized using the traditional solid-state reaction method. X-ray diffr...Inter-growth bismuth layer-structured ferroelectrics（BLSFs）, Bi_4Ti_3O_（12）-Na_（0.5）Bi_（4.5）Ti_4O_（15）（BIT-NBT）, were successfully synthesized using the traditional solid-state reaction method. X-ray diffraction（XRD） Rietveld refinements were conducted using GSAS software. Good agreement and low residual are obtained. The XRD diffraction peaks can be well indexed into I2 cm space group. The inter-growth structure was further observed in the high-resolution TEM image. Dielectric and impedance properties were measured and systematically analyzed. At the temperature range 763-923 K（below T_c）, doubly ionized oxygen vacancies（OVs） are localized and the short-range hopping leads to the relaxation processes with an activation energy of 0.79-1.01 eV. Above T_c, the doubly charged OVs are delocalized and become free ones, which contribute to the long-range dc conduction. The reduction in relaxation species gives rise to a higher relaxation activation energy ~ 1.6 eV.展开更多
Dysprosium-doped Bi4Ti3O12 (Bi3.4Dy0.6Ti3O12, BDT) ferroelectric thin films were deposited on Pt(111)/Ti/SiO2/Si(111) substrates by chemical solution deposition (CSD) and crystallized in nitrogen, air and oxygen atmos...Dysprosium-doped Bi4Ti3O12 (Bi3.4Dy0.6Ti3O12, BDT) ferroelectric thin films were deposited on Pt(111)/Ti/SiO2/Si(111) substrates by chemical solution deposition (CSD) and crystallized in nitrogen, air and oxygen atmospheres, respectively. X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to identify the crystal structure, the surface and cross-section morphology of the deposited ferroelectric films. The results show that the crystallization atmosphere has significant effect on determining the crystallization and ferroelectric properties of the BDT films. The film crystallized in nitrogen at a relatively low temperature of 650 ℃, exhibits excellent crystallinity and ferroelectricity with a remanent polarization of 2Pr = 24.9 μC/cm2 and a coercive field of 144.5 kV/cm. While the films annealed in air and oxygen at 650 ℃ do not show good crystallinity and ferroelectricity until they are annealed at 700 ℃. The structure evolution and ferroelectric properties of BDT thin films annealed under different temperatures (600?750 ℃) were also investigated. The crystallinity of the BDT films is improved and the average grain size increases when the annealing temperature increases from 600 ℃ to 750 ℃ at an interval of 50 ℃. However, the polarization of the films is not monotonous function of the annealing temperature.展开更多
This study investigated the behavior and molecular organization of synthetic artificial mimic molecules that resemble the following tetraether lipids: di-O-hexadecyl-glycero-3-phosphatidyl-glycerol (DHGPG) and bis-4-d...This study investigated the behavior and molecular organization of synthetic artificial mimic molecules that resemble the following tetraether lipids: di-O-hexadecyl-glycero-3-phosphatidyl-glycerol (DHGPG) and bis-4-dodecylphenyl-12-phosphate. These molecules were analyzed using Langmuir film balance, ellipsometry and atomic force microscopy. The monolayer Langmuir-Blodgett films of DHGPG and bis-4-dodecylphenyl-12-phosphate were stable on the solid surface silicon wafers. The ellipsometry and AFM results showed that monolayers Langmuir-Blodgett films of DHGPG and bis-4-dodecylphenyl-12-phosphate were present, and the thickness of the observed films varied from 1.2 - 5.0 nm.展开更多
The Bi4Ti3Oi2 and Bi3.25La0.75Ti3O12 thin films were prepared on the Pt/Ti/SiO2/Si substrate using the sol-gel method. The effect of La doping on the microstructure and ferroelectric properties of Bi4Ti3O12 films were...The Bi4Ti3Oi2 and Bi3.25La0.75Ti3O12 thin films were prepared on the Pt/Ti/SiO2/Si substrate using the sol-gel method. The effect of La doping on the microstructure and ferroelectric properties of Bi4Ti3O12 films were investigated. Both the Bi4Ti3O12 and Bi3.25La0.75Ti3O12 thin films exhibited typical bismuth layered perovskite structure. The 2Pr （remanent polarization） value of Bi3.25La0.75Ti3O12 thin films is 18.6 μC/cm^2, which is much larger than that of Bi4Ti3O12 thin films. And the Bi3.2eLa0.75Ti3O12 films show fatigue-free behavior, while the Bi4Ti3O12 thin films exhibit the fatigue problem. The mechanism of improvement of La doping was discussed.展开更多
A Au/Bi4Ti3O12/n-Si structure is fabricated in order to investigate its current voltage （IV） characteristics in a temperature range of 300 K-400 K. Obtained I-V data are evaluated by the thermionic emission （TE） t...A Au/Bi4Ti3O12/n-Si structure is fabricated in order to investigate its current voltage （IV） characteristics in a temperature range of 300 K-400 K. Obtained I-V data are evaluated by the thermionic emission （TE） theory. Zero-bias barrier height （Ф0） and ideality factor （n） calculated from I-V characteristics, are found to be temperature-dependent such that ФB0 increases with temperature increasing, whereas n decreases. The obtained temperature dependence of ФB0 and linearity in ФB0 versus the n plot, together with a lower barrier height and Richardson constant values obtained from the Richardson plot, indicate that the barrier height of the structure is inhomogeneous in nature. Therefore, I-V characteristics are explained on the basis of Caussian distribution of barrier height.展开更多
Chemical solution route was used to synthesize Bi3.1La0.9Ti3O12 and CoFe2O4. Alternate CoFe2O4/Bi3.1La0.9Ti3O12 layers were deposited on Pt substrate （Pt/TiO2/SiO2/Si） by spin coating. X-ray diffraction and SEM （sc...Chemical solution route was used to synthesize Bi3.1La0.9Ti3O12 and CoFe2O4. Alternate CoFe2O4/Bi3.1La0.9Ti3O12 layers were deposited on Pt substrate （Pt/TiO2/SiO2/Si） by spin coating. X-ray diffraction and SEM （scanning electron microscopy） studies show composite-like polycrystalline films. Films were studied for leakage current, dielectric response, ferroelectric and ferromagnetic properties. Leakage current was low （〈 10^-8 A） in electric field below 120 kV/cm, and the dielectric response shows relaxation. Dielectric loss （tan 8） reduces 〈 3% at 10^6 Hz. Two and four layer structures showed room temperature FE （ferroelectric） and FM （ferromagnetic） responses with FE Pr （polarization） 〉 25℃/cm2 and ferromagnetic Mr （memory） 〉 52 emu/cm3. Co-existence of FE and FM can be attributed to stress due to different crystal structures of the material involved in composite film structure.展开更多
Polycrystalline Bi_4Ti_3O_（12） thin films with various fractions of a-axis, c-axis and random orientations have been grown on Pt（111）/Ti/Si O_2/Si substrates by laser-ablation under different kinetic growth condit...Polycrystalline Bi_4Ti_3O_（12） thin films with various fractions of a-axis, c-axis and random orientations have been grown on Pt（111）/Ti/Si O_2/Si substrates by laser-ablation under different kinetic growth conditions. The relationship between the structure and ferroelectric property of the films was investigated, so as to explore the possibility of enhancing ferroelectric polarization by controlling the preferred orientation. The structural characterization indicated that the large growth rate and high oxygen background pressure were both favorable for the growth of non-c-axis oriented grains in the Bi_4Ti_3O_（12） thin films. The films with high fractions of a-axis and random orientations, i e, f（a-sxis） = 28.3% and f（random） = 69.6%, could be obtained at the deposition temperature of 973 K, oxygen partial pressure of 15 Pa and laser fluence of 4.6 J/cm^2, respectively. It was also noted that the variation of ferroelectric polarization was in accordance with the evolution non-c-axis orientation. A large value of remanent polarization（2 Pr = 35.5 μC/cm^2） was obtained for the Bi_4Ti_3O_（12） thin films with significant non-c-axis orientation, even higher than that of rare-earth-doped Bi_4Ti_3O_（12） films.展开更多
基金financially supported by the National Natural Science Foundation of China(No.52172135)the Youth Top Talent Project of the National Special Support Program(No.2021-527-07)+1 种基金the Leading Talent Project of the National Special Support Program(No.2022WRLJ003)Guangdong Basic and Applied Basic Research Foundation for Distinguished Young Scholars(Nos.2022B1515020070 and 2021B1515020083)
文摘High-temperature piezoelectric ceramics are critical for aerospace and other advanced applications,yet achieving high sensitivity and stability under elevated temperatures remains challenging.In this study,we employ a multi-element co-doping strategy combined with domain engineering to significantly enhance the piezoelectric performance and Curie temperature of Bi_(4)Ti_(3)O_(12)(BIT)-based ceramics.Using a solid-state reaction method,W^(6+)/Nb^(5+)/Ta^(5+)/Sb^(3+)non-equivalently co-doped BIT ceramics were synthesized,achieving a high piezoelectric coefficient(d33)of 35 pC N^(-1),an elevated Curie temperature of 687℃,and an increased resistivity of 2.9×10^(6)Ωcm at an optimal doping level of x=0.02.This study further reveals the impact of poling conditions on domain structure,providing new insights for enhancing piezoelectric properties through domain configuration.A second high-voltage,short-duration poling process promotes the formation of large domains,underscoring the role of domain rearrangement in augmenting piezoelectric activity.This work demonstrates the potential of BIT-based ceramics in hightemperature sensing and precision actuation applications,presenting a novel strategy for designing high-performance piezoelectric materials for extreme environments.
基金supported financially by the National Natural Science Foundation of China(Nos.21501140,21403165,51372197)the Outstanding Youth Science Fund of Xi’an University of Science and Technology(No.2019YQ2-06)the Key Innovation Team of Shaanxi Province(No.2014KCT-04)。
文摘TiO2/Bi4 Ti3 O12 hybrids have been widely prepared as promising photocatalysts for decomposing organic contaminations.However,the insufficient visible light absorption and low charge separation efficiency lead to their poor photocatalytic activity.Herein,a robust methodology to construct novel TiO2/Bi4 Ti3 O12/MoS2 core/shell structures as visible light photocatalysts is presented.Homogeneous bismuth oxyiodide(BiOI) nanoplates were immobilized on electrospun TiO2 nanofiber surface by successive ionic layer adsorption and reaction(SILAR) method.TiO2/Bi4 Ti3 O12 core/shell nanofibers were conveniently prepared by partial conversion of TiO2 to high crystallized Bi4 Ti3 O12 shells through a solid-state reaction with BiOI nanoplates,which is accompanied with certain transition of TiO2 from anatase to rutile phase.Afterwards,MoS2 nanosheets with several layers thick were uniform decorated on the TiO2/Bi4 TiO3 O12 fiber surface resulting in TiO2/Bi4 Ti3 O12/MoS2 structures.Significant enhancement of visible light absorption and photo-generated charge separation of TiO2/Bi4 Ti3 O12 were achieved by introduction of MoS2.As a result,the optimized TiO2/Bi4 Ti3 O12/MoS2-2 presents 60% improvement for photodegrading RhB after 120 min irradiation under visible light and 3 times higher of apparent reaction rate constant in compared with the TiO2/Bi4 Ti3 O12.This synthetic method can also be used to establish other photocatalysts simply at low cost,therefore,is suitable for practical applications.
基金supported by the National Natural science Foundation of China (No. U1804138)the Science Foundation of Henan Province (No. 162300410209)+1 种基金the Key Scientific Research Project of High Schools in Henan Province (No. 17A480009)the Special Key Research Program of Henan Province (No. 182102210488)
文摘Alloyed-type anode materials with high-energy density for lithium and sodium ion batteries attracted much attention of the researchers. However, substantial volume expansion of these materials in the devices during repeated electrochemical process leads to fast capacity fading and hinders their further practical application. Nanotechnology could act as a useful tool to effectively address the issue. Herein, lotus-stalk Bi4Ge3O12 nanosheets vertically grown on the nickel foam (denoted as Bi4Ge3O12 NSs@NF) were prepared via a straight-forward solvothermal method. Benefiting from their three dimensional (3D) conductive framework and two dimensional (2D) lotus-stalk Bi4Ge3O12 nanosheet structure, as anode materials of lithium-ion batteries (LIBs) and sodium-ion batteries (NIBs), the electrochemical performances of Bi4Ge3O12 NSs@NF were greatly enhanced as a result of mitigating the huge volume variations during cycles. The Bi4Ge3O12 NSs@NF electrodes delivered a high reversible capacity of 1033.1 mAh/g for the first cycle and exhibited 68.6%capacity retention of after 88 cycles at 0.10 A/g in the voltage window of 0.01~3.0 V versus Li/Li+. In the test of NIBs, the lotus-stalk Bi4Ge3O12 composite electrodes still stored Na+as high as 332.3 mAh/g at 0.10 A/g over 100 sodiation/desodiation repeating cycles.
基金Supported by the National Natural Science Foundation of China(51509220)the Natural Science Foundation of Zhejiang Province(LQ14E090003)+1 种基金Ningbo Science and Technology Plan Projects(2014C50007,2014C51003)Ningbo major social development projects(2017C510006)
文摘The Bi_4Ti_3O_(12)/g-C_3N_4 composites with microsheet and nanosheet structure were prepared through facile ultrasonic-assisted method. The SEM and TEM results suggested that the nanosheets g-C_3N_4 were stacked on the surface of regular Bi_4Ti_3O_(12) sheets. Comparing with pure Bi_4Ti_3O_(12) and g-C_3N_4, the Bi_4Ti_3O_(12)/g-C_3N_4 composites showed significant enhancement in photocatalytic efficiency for the degradation of RhB in solution. With the mass ratio of g-C_3N_4 increasing to 10 wt%, the Bi_4Ti_3O_(12)/g-C_3N_4-10% presented the best photocatalytic activity. Its photocatalysis reaction constant was approximately 2 times higher than the single component Bi_4Ti_3O_(12) or g-C_3N_4. Meanwhile, good stability and durability for the Bi_4Ti_3O_(12)/g-C_3N_4-10% were confirmed by the recycling experiment and FT-IR analysis. The possible mechanism for the improvements was the matched band positions and the effective separation of photo-excited electrons(e-) and holes(h+). Furthermore, based on the results of active species trapping, photo-generated holes(h+) and superoxide radical(·O2-) could be the main radicals in reaction.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.51562014,51262009,and 51602135)
文摘Inter-growth bismuth layer-structured ferroelectrics（BLSFs）, Bi_4Ti_3O_（12）-Na_（0.5）Bi_（4.5）Ti_4O_（15）（BIT-NBT）, were successfully synthesized using the traditional solid-state reaction method. X-ray diffraction（XRD） Rietveld refinements were conducted using GSAS software. Good agreement and low residual are obtained. The XRD diffraction peaks can be well indexed into I2 cm space group. The inter-growth structure was further observed in the high-resolution TEM image. Dielectric and impedance properties were measured and systematically analyzed. At the temperature range 763-923 K（below T_c）, doubly ionized oxygen vacancies（OVs） are localized and the short-range hopping leads to the relaxation processes with an activation energy of 0.79-1.01 eV. Above T_c, the doubly charged OVs are delocalized and become free ones, which contribute to the long-range dc conduction. The reduction in relaxation species gives rise to a higher relaxation activation energy ~ 1.6 eV.
基金Project (05FJ2005) supported by the Key Project of Scientific and Technological Department of Hunan Province, China Project (05C095) supported by the Research Funds of Educational Department of Hunan Province, China
文摘Dysprosium-doped Bi4Ti3O12 (Bi3.4Dy0.6Ti3O12, BDT) ferroelectric thin films were deposited on Pt(111)/Ti/SiO2/Si(111) substrates by chemical solution deposition (CSD) and crystallized in nitrogen, air and oxygen atmospheres, respectively. X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to identify the crystal structure, the surface and cross-section morphology of the deposited ferroelectric films. The results show that the crystallization atmosphere has significant effect on determining the crystallization and ferroelectric properties of the BDT films. The film crystallized in nitrogen at a relatively low temperature of 650 ℃, exhibits excellent crystallinity and ferroelectricity with a remanent polarization of 2Pr = 24.9 μC/cm2 and a coercive field of 144.5 kV/cm. While the films annealed in air and oxygen at 650 ℃ do not show good crystallinity and ferroelectricity until they are annealed at 700 ℃. The structure evolution and ferroelectric properties of BDT thin films annealed under different temperatures (600?750 ℃) were also investigated. The crystallinity of the BDT films is improved and the average grain size increases when the annealing temperature increases from 600 ℃ to 750 ℃ at an interval of 50 ℃. However, the polarization of the films is not monotonous function of the annealing temperature.
文摘This study investigated the behavior and molecular organization of synthetic artificial mimic molecules that resemble the following tetraether lipids: di-O-hexadecyl-glycero-3-phosphatidyl-glycerol (DHGPG) and bis-4-dodecylphenyl-12-phosphate. These molecules were analyzed using Langmuir film balance, ellipsometry and atomic force microscopy. The monolayer Langmuir-Blodgett films of DHGPG and bis-4-dodecylphenyl-12-phosphate were stable on the solid surface silicon wafers. The ellipsometry and AFM results showed that monolayers Langmuir-Blodgett films of DHGPG and bis-4-dodecylphenyl-12-phosphate were present, and the thickness of the observed films varied from 1.2 - 5.0 nm.
基金the Foundation of Wuhan University of Science and Technology
文摘The Bi4Ti3Oi2 and Bi3.25La0.75Ti3O12 thin films were prepared on the Pt/Ti/SiO2/Si substrate using the sol-gel method. The effect of La doping on the microstructure and ferroelectric properties of Bi4Ti3O12 films were investigated. Both the Bi4Ti3O12 and Bi3.25La0.75Ti3O12 thin films exhibited typical bismuth layered perovskite structure. The 2Pr （remanent polarization） value of Bi3.25La0.75Ti3O12 thin films is 18.6 μC/cm^2, which is much larger than that of Bi4Ti3O12 thin films. And the Bi3.2eLa0.75Ti3O12 films show fatigue-free behavior, while the Bi4Ti3O12 thin films exhibit the fatigue problem. The mechanism of improvement of La doping was discussed.
基金Project supported by the Diizce University Scientific Research Project(Grant Nos.2010.05.02.056 and 2012.05.02.110)
文摘A Au/Bi4Ti3O12/n-Si structure is fabricated in order to investigate its current voltage （IV） characteristics in a temperature range of 300 K-400 K. Obtained I-V data are evaluated by the thermionic emission （TE） theory. Zero-bias barrier height （Ф0） and ideality factor （n） calculated from I-V characteristics, are found to be temperature-dependent such that ФB0 increases with temperature increasing, whereas n decreases. The obtained temperature dependence of ФB0 and linearity in ФB0 versus the n plot, together with a lower barrier height and Richardson constant values obtained from the Richardson plot, indicate that the barrier height of the structure is inhomogeneous in nature. Therefore, I-V characteristics are explained on the basis of Caussian distribution of barrier height.
文摘Chemical solution route was used to synthesize Bi3.1La0.9Ti3O12 and CoFe2O4. Alternate CoFe2O4/Bi3.1La0.9Ti3O12 layers were deposited on Pt substrate （Pt/TiO2/SiO2/Si） by spin coating. X-ray diffraction and SEM （scanning electron microscopy） studies show composite-like polycrystalline films. Films were studied for leakage current, dielectric response, ferroelectric and ferromagnetic properties. Leakage current was low （〈 10^-8 A） in electric field below 120 kV/cm, and the dielectric response shows relaxation. Dielectric loss （tan 8） reduces 〈 3% at 10^6 Hz. Two and four layer structures showed room temperature FE （ferroelectric） and FM （ferromagnetic） responses with FE Pr （polarization） 〉 25℃/cm2 and ferromagnetic Mr （memory） 〉 52 emu/cm3. Co-existence of FE and FM can be attributed to stress due to different crystal structures of the material involved in composite film structure.
基金Funded by the International Science and Technology Cooperation Project of Hubei Province(2016AHB008)the Natural Science Foundation of Hubei Province(2015CFB724,2016CFA006)+1 种基金the National Natural Science Foundation of China(51272195,51521001)the National Key Research and Development Program of China(2017YFB0310400)
文摘Polycrystalline Bi_4Ti_3O_（12） thin films with various fractions of a-axis, c-axis and random orientations have been grown on Pt（111）/Ti/Si O_2/Si substrates by laser-ablation under different kinetic growth conditions. The relationship between the structure and ferroelectric property of the films was investigated, so as to explore the possibility of enhancing ferroelectric polarization by controlling the preferred orientation. The structural characterization indicated that the large growth rate and high oxygen background pressure were both favorable for the growth of non-c-axis oriented grains in the Bi_4Ti_3O_（12） thin films. The films with high fractions of a-axis and random orientations, i e, f（a-sxis） = 28.3% and f（random） = 69.6%, could be obtained at the deposition temperature of 973 K, oxygen partial pressure of 15 Pa and laser fluence of 4.6 J/cm^2, respectively. It was also noted that the variation of ferroelectric polarization was in accordance with the evolution non-c-axis orientation. A large value of remanent polarization（2 Pr = 35.5 μC/cm^2） was obtained for the Bi_4Ti_3O_（12） thin films with significant non-c-axis orientation, even higher than that of rare-earth-doped Bi_4Ti_3O_（12） films.
