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Epitaxial Growth and Thermoelectric Measurement of Bi2Te3/Sb Superlattice Nanowires
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作者 李亮 许思超 李广海 《Chinese Journal of Chemical Physics》 SCIE CAS CSCD 2016年第3期365-368,I0002,共5页
Superlattice nanowires are expected to show further enhanced thermoelectric performance compared with conventional nanowires or superlattice thin films. We report the epitaxial growth of high density Bi2Te3/Sb superla... Superlattice nanowires are expected to show further enhanced thermoelectric performance compared with conventional nanowires or superlattice thin films. We report the epitaxial growth of high density Bi2Te3/Sb superlattice nanowire arrays with a very small bilayer thickness by pulse electrodeposition. Transmission electron microscopy, selected area electron diffraction and high resolution transmission electron microscopy were used to characterize the superlattice nanowires, and Harman technique was employed to measure the figure of merit (ZT) of the superlattice nanowire array in high vacuum condition. The superlattice nanowire arrays exhibit a ZT of 0.15 at 330 K, and a temperature difference of about 6.6 K can be realized across the nanowire arrays. 展开更多
关键词 bi2we3 Superlattice nanowires ELECTRODEPOSITION THERMOELECTRIC Harmantechnique
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