We systematically investigated the electrical nanoplates through field effect transistor and properties of spiral-type and smooth Bi2Se3 conductive atomic force microscopy （CAFM） measurement. It is observed that bot...We systematically investigated the electrical nanoplates through field effect transistor and properties of spiral-type and smooth Bi2Se3 conductive atomic force microscopy （CAFM） measurement. It is observed that both nanoplates possess high conductivity and show metallic-like behavior. Compared to the smooth nanoplate, the spiral-type one exhibits the higher carrier concentration and lower mobility. CAFM characterization reveals that the conductance at the screw-dislocation edge is even higher than that on the terrace, implying that the dislocation can supply excess carriers to compensate the low mobility and achieve high conductivity. The unique structure and electrical properties make the spiral-type Bi2 Se3 nanoplates a good candidate for catalysts and gas sensors.展开更多
We develop a tractable theoretical model to investigate the thermoelectric （TE） transport properties of surface states in topological insulator thin films （TITFs） of Bi2Sea at room temperature. The hybridization b...We develop a tractable theoretical model to investigate the thermoelectric （TE） transport properties of surface states in topological insulator thin films （TITFs） of Bi2Sea at room temperature. The hybridization between top and bottom surface states in the TITF plays a significant role. With the increasing hybridization-induced surface gap, the electrical conductivity and electron thermal conductivity decrease while the Seebeck coefficient increases. This is due to the metal-semiconductor transition induced by the surface-state hybridization. Based on these TE transport coefficients, the TE figure-of-merit ZT is evaluated. It is shown that ZT can be greatly improved by the surface-state hybridization. Our theoretical results are pertinent to the exploration of the TE transport properties of surface states in TITFs and to the potential application of Bi2Sea-based TITFs as high-performance TE materials and devices.展开更多
Cux Bi2Se3 is a superconductor that is a potential candidate for topological superconductors. We report our laser- based angle-resolved photoemission measurement on the electronic structure of the CuxBi2Se3 supercondu...Cux Bi2Se3 is a superconductor that is a potential candidate for topological superconductors. We report our laser- based angle-resolved photoemission measurement on the electronic structure of the CuxBi2Se3 superconductor, and a detailed magneto-resistance measurement in both normal and superconducting states. We find that the topological surface state of the pristine Bi2Se3 topological insulator remains robust after the Cu-intercalation, while the Dirae cone location moves downward due to electron doping. Detailed measurements on the magnetic field-dependence of the resistance in the superconducting state establishes an irreversibility line and gives a value of the upper critical field at zero temperature of ～4000 Oe for the Cu0.3Bi2Se3 superconductor with a middle point Tc of 1.g K. The relation between the upper critical field He2 and temperature T is different from the usual scaling relation found in cuprates and in other kinds of superconductors. Small positive magneto-resistance is observed in Cuo.3Bi2Se3 superconductors up to room temperature. These observations provide useful information for further study of this possible candidate for topological superconductors.展开更多
We investigate the impurity effects on surfaces of a thin film topological insulator, applied by an off-resonant circular polarized light. It is found that the off-resonant driving induces a quantized total Hall condu...We investigate the impurity effects on surfaces of a thin film topological insulator, applied by an off-resonant circular polarized light. It is found that the off-resonant driving induces a quantized total Hall conductivity, when the driving strength is larger than a critical value and the Fermi level lies in the band gap, indicating that our system is converted into the topological phase. We also find that with the increasing disorder strength, the Dirac masses of top and bottom surfaces are renormalized and then fixed to half of their initial values, respectively,which will shrink the widths of the half-integer plateau of anomalous Hall conductivities.展开更多
Bi2(Te,Se)3 alloys are conventional commercial thermoelectric materials for solid-state refrigeration around room temperature.In recent years,much attention has been paid to various advanced thermoelectric composite m...Bi2(Te,Se)3 alloys are conventional commercial thermoelectric materials for solid-state refrigeration around room temperature.In recent years,much attention has been paid to various advanced thermoelectric composite materials due to the unique thermoelectric properties.In this work,Bi2Se3/TiO2 composites were prepared by hot pressing the plate-like Bi2Se3 powders coated in situ with hydrolyzed hytetabutyl-n-butyl titanate(TNBT),and therefore numerous TiO2 in micrometer size could be formed on the interface of Bi2Se3 grains.The carrier concentration in Bi2Se3 matrix is optimized subject to the addition of n-type semiconductor TiO2,contributing to a significant improved power factor.In the meantime,the lattice thermal conductivity is also suppressed due to the enhanced phonon scattering at Bi2Se3/TiO2 interface and amorphous TiO2 particles.As a consequence,a peak figure of merit(zT)of 0.41 is obtained at 525 K in Bi2Se3/15 mol%TiO2 composites,nearly 50%augment over the pristine Bi2Se3 binary compound.展开更多
Water-dispersed CdSe/Bi2Se3 core/shell QDs with a photothermal conversion coefficient of 27.09% have been synthesized by a cation exchange reaction. The microstructure and crystal structure of the QDs, which were conf...Water-dispersed CdSe/Bi2Se3 core/shell QDs with a photothermal conversion coefficient of 27.09% have been synthesized by a cation exchange reaction. The microstructure and crystal structure of the QDs, which were confirmed by TEM and XRD, showed that partial cation exchange occurred inside the CdSe QDs. Two main mechanisms are responsible for the excellent photothermal conversion： inhibition of radiative recombination of carriers due to the formation of type-II semiconductor heterostructures, and the large surface-to-volume ratio of the QDs. Photothermal conversion experiments indicated that the CdSe/Bi2Se3 QDs showed high photothermal conversion efficiency and excellent NIR photostability.展开更多
Checkpoint blockade based immune therapy has shown to be effective but benefit only the minority of patients whose tumors have been pre-infiltrated by T cells. To overcome this obstacles, a PEG-modified Bi2Se3 nanocag...Checkpoint blockade based immune therapy has shown to be effective but benefit only the minority of patients whose tumors have been pre-infiltrated by T cells. To overcome this obstacles, a PEG-modified Bi2Se3 nanocage (NC) loaded with imiquimod (R848), which could efficiently destroy the tumors thus producing enough tumor-associated antigens (TAA) and with the existence of R848, a toll-like-receptor-7 agonist, could generate strong anti-cancer immune responses is reported in this study. Moreover, immunogenic Bi2Se3 NC-PEG/R848 mediated photothermal therapy (PTT) sensitizes tumors to checkpoint inhibition mediated by a PD-L1 antibody, not only ablating cancer cells upon NIR laser but also causing strong anti-cancer immunity to suppress distant tumor growth post PTT. Both in vitro and in vivo experiments demonstrate that the Bi2Se3 NC-PEG/R848 could effectively activate a PTT-induced immune response as well as silence immune resistance based on PD-L1 checkpoint blockade to ablate the primary tumor and further inhibit the tumor metastasis. Bi2Se3 NC reported here exhibits high photothermal conversion efficiency and stability, as well as competent drug loading capacity with large hollow structures and high surface area. Our study not only provides a facial way to synthesize Bi2Se3 NC, but also offers an alternative strategy for tumor metastasis.展开更多
Thermal transport in superlattices is governed by various phonon-scattering processes. For extracting the phonon-scattering contribution of hetero-interfaces in chalcogenide superlattices, single-crystalline Bi2Se3/In...Thermal transport in superlattices is governed by various phonon-scattering processes. For extracting the phonon-scattering contribution of hetero-interfaces in chalcogenide superlattices, single-crystalline Bi2Se3/In2Se3 （BS/IS） superlattices with minimized defects are prepared on fluorophlogopite mica by molecular beam epitaxy. The cross-plane heat-conducting properties of the BS/IS superlattices are demonstrated to depend precisely on the period thicknesses and constituents of the superlattices, where a minimum in the thermal conductivity indicates a crossover from particle-like to wave-like phonon transport in the superlattices. The thermal-conductivity minimum of the BS/IS superlattices is nearly one order of magnitude lower than that of intrinsic BS film.展开更多
Bi2Se3 has been predicted to be a three-dimensional （3D） topological insulator （TI） with Dirac fermions residing on the two-dimensional （2D） surface. Unique transport properties such as high carrier mobility due...Bi2Se3 has been predicted to be a three-dimensional （3D） topological insulator （TI） with Dirac fermions residing on the two-dimensional （2D） surface. Unique transport properties such as high carrier mobility due to the suppressed backscattering are expected for the Dirac fermions. In order to eliminate the contribution of the bulk carriers, therefore, to place the Fermi level in the band gap of Bi2Se3, we first introduce various amounts of Ca dopants into the crystal to realize the bulk insulating state. Then by avoiding uncontrolled heating and electron beam irradiation in the nanofabrication process, we maintain the insulating state in thin devices. By sweeping the gate voltage, we have observed a conductivity minimum that is expected for the Dirac fermions in the band gap of 3D TIs.展开更多
Shape control has proven to be a powerful and versatile means of tailoring the properties of Bi2Se3 nanostructures for a wide variety of applications. Here, three different Bi2Se3 nanostructures, i.e., spiral-type nan...Shape control has proven to be a powerful and versatile means of tailoring the properties of Bi2Se3 nanostructures for a wide variety of applications. Here, three different Bi2Se3 nanostructures, i.e., spiral-type nanoplates, smooth nanoplates, and dendritic nanostructures, were prepared by manipulating the supersaturation level in the synthetic system. This mechanism study indicated that, at low supersaturation, defects in the crystal growth could cause a step edge upon which Bi2Se3 particles were added continuously, leading to the formation of spiral-type nanoplates. At intermediate supersaturation, the aggregation of amorphous Bi2Se3 particles and subsequent recrystallization resulted in the formation of smooth nanoplates. Furthermore, at high supersaturation, polycrystalline Bi2Se3 cores formed initially, on which anisotropic growth of Bi2Se3 occurred. This work not only advances our understanding of the growth mechanism but also offers a new approach to control the morphology of Bi2Se3 nanostructures.展开更多
We demonstrate a dual-wavelength passively Q-switched Nd^（3＋）-doped glass fiber laser using a few-layer topological insulator Bi2Se3 as a saturable absorber（SA） for the first time, to the best of our knowledge. T...We demonstrate a dual-wavelength passively Q-switched Nd^（3＋）-doped glass fiber laser using a few-layer topological insulator Bi2Se3 as a saturable absorber（SA） for the first time, to the best of our knowledge. The laser resonator is a simple and compact linear cavity using two fiber end-facet mirrors. The SA is fabricated by Bi2Se3/polyvinyl alcohol composite film. By inserting the SA into the laser cavity, a stable Q-switching operation is achieved with the shortest pulse width and maximum pulse repetition rate of 601 ns and 205.2 kHz,respectively. The maximum average output power and maximum pulse energy obtained are about 6.6 mW and 38.8 nJ, respectively.展开更多
High-quality Bi2Se3 microcrystals were grown by the physical vapor transport （PVT） method without using a foreign transport agent. The microplate crystals grown under the optimal temperature gradient are well facete...High-quality Bi2Se3 microcrystals were grown by the physical vapor transport （PVT） method without using a foreign transport agent. The microplate crystals grown under the optimal temperature gradient are well faceted and have dimensions up to -200 μm, The growth proceeds by the layer-by-layer mecha- nism with the formation of flat low-growth rate facets. The phase composition of the grown crystals was identified by the X-ray single crystal structure analysis in space group R3m, a = 4.1356（3）, C= 28.634（5）A, Z=3 （R=0.0147）. The most probable twin planes in the tetradymite structure were evaluated by the pseudo translational sublattice merhad.展开更多
文摘We systematically investigated the electrical nanoplates through field effect transistor and properties of spiral-type and smooth Bi2Se3 conductive atomic force microscopy （CAFM） measurement. It is observed that both nanoplates possess high conductivity and show metallic-like behavior. Compared to the smooth nanoplate, the spiral-type one exhibits the higher carrier concentration and lower mobility. CAFM characterization reveals that the conductance at the screw-dislocation edge is even higher than that on the terrace, implying that the dislocation can supply excess carriers to compensate the low mobility and achieve high conductivity. The unique structure and electrical properties make the spiral-type Bi2 Se3 nanoplates a good candidate for catalysts and gas sensors.
基金Supported by the National Natural Science Foundation of China under Grant No 11304316the Ministry of Science and Technology of China under Grant No 2011YQ130018the Department of Science and Technology of Yunnan Province,and the Chinese Academy of Sciences
文摘We develop a tractable theoretical model to investigate the thermoelectric （TE） transport properties of surface states in topological insulator thin films （TITFs） of Bi2Sea at room temperature. The hybridization between top and bottom surface states in the TITF plays a significant role. With the increasing hybridization-induced surface gap, the electrical conductivity and electron thermal conductivity decrease while the Seebeck coefficient increases. This is due to the metal-semiconductor transition induced by the surface-state hybridization. Based on these TE transport coefficients, the TE figure-of-merit ZT is evaluated. It is shown that ZT can be greatly improved by the surface-state hybridization. Our theoretical results are pertinent to the exploration of the TE transport properties of surface states in TITFs and to the potential application of Bi2Sea-based TITFs as high-performance TE materials and devices.
基金the National Natural Science Foundation of China under Grant Nos 11190022,91021006 and 11374338the National Basic Research Program of China under Grant Nos 2011CB921703,2011CBA00110 and 2013CB921700the Strategic Priority Research Program(B) of the Chinese Academy of Sciences under Grant No XDB07020300
文摘Cux Bi2Se3 is a superconductor that is a potential candidate for topological superconductors. We report our laser- based angle-resolved photoemission measurement on the electronic structure of the CuxBi2Se3 superconductor, and a detailed magneto-resistance measurement in both normal and superconducting states. We find that the topological surface state of the pristine Bi2Se3 topological insulator remains robust after the Cu-intercalation, while the Dirae cone location moves downward due to electron doping. Detailed measurements on the magnetic field-dependence of the resistance in the superconducting state establishes an irreversibility line and gives a value of the upper critical field at zero temperature of ～4000 Oe for the Cu0.3Bi2Se3 superconductor with a middle point Tc of 1.g K. The relation between the upper critical field He2 and temperature T is different from the usual scaling relation found in cuprates and in other kinds of superconductors. Small positive magneto-resistance is observed in Cuo.3Bi2Se3 superconductors up to room temperature. These observations provide useful information for further study of this possible candidate for topological superconductors.
基金Supported by the National Key R&D Program of China under Grant No 2017YFA0303203the National Natural Science Foundation of China under Grant Nos 11574217 and 11474149
文摘We investigate the impurity effects on surfaces of a thin film topological insulator, applied by an off-resonant circular polarized light. It is found that the off-resonant driving induces a quantized total Hall conductivity, when the driving strength is larger than a critical value and the Fermi level lies in the band gap, indicating that our system is converted into the topological phase. We also find that with the increasing disorder strength, the Dirac masses of top and bottom surfaces are renormalized and then fixed to half of their initial values, respectively,which will shrink the widths of the half-integer plateau of anomalous Hall conductivities.
基金financially supported by the National Natural Science Foundation of China(Nos.51871199 and 61534001)。
文摘Bi2(Te,Se)3 alloys are conventional commercial thermoelectric materials for solid-state refrigeration around room temperature.In recent years,much attention has been paid to various advanced thermoelectric composite materials due to the unique thermoelectric properties.In this work,Bi2Se3/TiO2 composites were prepared by hot pressing the plate-like Bi2Se3 powders coated in situ with hydrolyzed hytetabutyl-n-butyl titanate(TNBT),and therefore numerous TiO2 in micrometer size could be formed on the interface of Bi2Se3 grains.The carrier concentration in Bi2Se3 matrix is optimized subject to the addition of n-type semiconductor TiO2,contributing to a significant improved power factor.In the meantime,the lattice thermal conductivity is also suppressed due to the enhanced phonon scattering at Bi2Se3/TiO2 interface and amorphous TiO2 particles.As a consequence,a peak figure of merit(zT)of 0.41 is obtained at 525 K in Bi2Se3/15 mol%TiO2 composites,nearly 50%augment over the pristine Bi2Se3 binary compound.
基金This work has been partly supported by the National Basic Research Program of China （973 Program） No. 2011CB922204-2, and the National Natural Science Foundation of China （Nos. 11434010, 11147024, 11247025, 11304306, 11374002, and 61290303）.
文摘Water-dispersed CdSe/Bi2Se3 core/shell QDs with a photothermal conversion coefficient of 27.09% have been synthesized by a cation exchange reaction. The microstructure and crystal structure of the QDs, which were confirmed by TEM and XRD, showed that partial cation exchange occurred inside the CdSe QDs. Two main mechanisms are responsible for the excellent photothermal conversion： inhibition of radiative recombination of carriers due to the formation of type-II semiconductor heterostructures, and the large surface-to-volume ratio of the QDs. Photothermal conversion experiments indicated that the CdSe/Bi2Se3 QDs showed high photothermal conversion efficiency and excellent NIR photostability.
基金supported by the National Basic Research Project (973 Program) of China (No.2014CB932200)the National Natural Science Foundation of China (Nos.81503016, 81771880, and 81401453)the Application Foundation and Cutting-edge Technologies Research Project of Tianjin (Young Program)(No.15JCQNJC13800).
文摘Checkpoint blockade based immune therapy has shown to be effective but benefit only the minority of patients whose tumors have been pre-infiltrated by T cells. To overcome this obstacles, a PEG-modified Bi2Se3 nanocage (NC) loaded with imiquimod (R848), which could efficiently destroy the tumors thus producing enough tumor-associated antigens (TAA) and with the existence of R848, a toll-like-receptor-7 agonist, could generate strong anti-cancer immune responses is reported in this study. Moreover, immunogenic Bi2Se3 NC-PEG/R848 mediated photothermal therapy (PTT) sensitizes tumors to checkpoint inhibition mediated by a PD-L1 antibody, not only ablating cancer cells upon NIR laser but also causing strong anti-cancer immunity to suppress distant tumor growth post PTT. Both in vitro and in vivo experiments demonstrate that the Bi2Se3 NC-PEG/R848 could effectively activate a PTT-induced immune response as well as silence immune resistance based on PD-L1 checkpoint blockade to ablate the primary tumor and further inhibit the tumor metastasis. Bi2Se3 NC reported here exhibits high photothermal conversion efficiency and stability, as well as competent drug loading capacity with large hollow structures and high surface area. Our study not only provides a facial way to synthesize Bi2Se3 NC, but also offers an alternative strategy for tumor metastasis.
基金Acknowledgements This work is supported by the National Natural Science Foundation of China （Nos. 11104010, 61474014, and 51272038）, Open Research Fund Program of the State Key Laboratory of Low-Dimensional Quantum Physics （No. 20120910）, and the National Basic Research Program of China （No. 2013CB933301）.
文摘Thermal transport in superlattices is governed by various phonon-scattering processes. For extracting the phonon-scattering contribution of hetero-interfaces in chalcogenide superlattices, single-crystalline Bi2Se3/In2Se3 （BS/IS） superlattices with minimized defects are prepared on fluorophlogopite mica by molecular beam epitaxy. The cross-plane heat-conducting properties of the BS/IS superlattices are demonstrated to depend precisely on the period thicknesses and constituents of the superlattices, where a minimum in the thermal conductivity indicates a crossover from particle-like to wave-like phonon transport in the superlattices. The thermal-conductivity minimum of the BS/IS superlattices is nearly one order of magnitude lower than that of intrinsic BS film.
文摘Bi2Se3 has been predicted to be a three-dimensional （3D） topological insulator （TI） with Dirac fermions residing on the two-dimensional （2D） surface. Unique transport properties such as high carrier mobility due to the suppressed backscattering are expected for the Dirac fermions. In order to eliminate the contribution of the bulk carriers, therefore, to place the Fermi level in the band gap of Bi2Se3, we first introduce various amounts of Ca dopants into the crystal to realize the bulk insulating state. Then by avoiding uncontrolled heating and electron beam irradiation in the nanofabrication process, we maintain the insulating state in thin devices. By sweeping the gate voltage, we have observed a conductivity minimum that is expected for the Dirac fermions in the band gap of 3D TIs.
基金Acknowledgements This work was supported by Collaborative Innovation Center of Suzhou Nano Science and Technology, MOST of China （No. 2014CB932700）, 2015SRG-HSC049, National Natural Science Foundation of China （Nos. 21203173, 21573206, 11574281, 51371164, 51132007, and J1030412）, Strategic Priority Research Program B of the CAS （No. XDB01020000）, and Fundamental Research Funds for the Central Universities （Nos. WK2340000050, WK2060190025, and WK3510000002）.
文摘Shape control has proven to be a powerful and versatile means of tailoring the properties of Bi2Se3 nanostructures for a wide variety of applications. Here, three different Bi2Se3 nanostructures, i.e., spiral-type nanoplates, smooth nanoplates, and dendritic nanostructures, were prepared by manipulating the supersaturation level in the synthetic system. This mechanism study indicated that, at low supersaturation, defects in the crystal growth could cause a step edge upon which Bi2Se3 particles were added continuously, leading to the formation of spiral-type nanoplates. At intermediate supersaturation, the aggregation of amorphous Bi2Se3 particles and subsequent recrystallization resulted in the formation of smooth nanoplates. Furthermore, at high supersaturation, polycrystalline Bi2Se3 cores formed initially, on which anisotropic growth of Bi2Se3 occurred. This work not only advances our understanding of the growth mechanism but also offers a new approach to control the morphology of Bi2Se3 nanostructures.
基金supported by the National Natural Science Foundation of China(NSFC)(No.61275050)the Project funded by the Department of Education of Guizhou Province(No.[2016]140)+3 种基金the Science and Technology Foundation of Guizhou Province(Nos.[2014]2124,[2010]2146,and[2009]06)the Science and Technology Plan Projects of Guizhou Province(No.SY2013[3055])the Science-Technology Union Foundation of Guizhou Province(No.[2014]7045)the International Science-Technology cooperation project of Guizhou Province of China(No.[2013]7019)
文摘We demonstrate a dual-wavelength passively Q-switched Nd^（3＋）-doped glass fiber laser using a few-layer topological insulator Bi2Se3 as a saturable absorber（SA） for the first time, to the best of our knowledge. The laser resonator is a simple and compact linear cavity using two fiber end-facet mirrors. The SA is fabricated by Bi2Se3/polyvinyl alcohol composite film. By inserting the SA into the laser cavity, a stable Q-switching operation is achieved with the shortest pulse width and maximum pulse repetition rate of 601 ns and 205.2 kHz,respectively. The maximum average output power and maximum pulse energy obtained are about 6.6 mW and 38.8 nJ, respectively.
文摘High-quality Bi2Se3 microcrystals were grown by the physical vapor transport （PVT） method without using a foreign transport agent. The microplate crystals grown under the optimal temperature gradient are well faceted and have dimensions up to -200 μm, The growth proceeds by the layer-by-layer mecha- nism with the formation of flat low-growth rate facets. The phase composition of the grown crystals was identified by the X-ray single crystal structure analysis in space group R3m, a = 4.1356（3）, C= 28.634（5）A, Z=3 （R=0.0147）. The most probable twin planes in the tetradymite structure were evaluated by the pseudo translational sublattice merhad.
