A full-duplex radiant energy converter based on both betavoltaic and photovoltaic effects in an easyto-implement way is an attractive alternative for the autonomous wireless sensor microsystem.Here,we report a novel b...A full-duplex radiant energy converter based on both betavoltaic and photovoltaic effects in an easyto-implement way is an attractive alternative for the autonomous wireless sensor microsystem.Here,we report a novel beta/photovoltaic cell based on free-standing Zn O nanorod arrays(ZNRAs)modified with metallic single-walled carbon nanotubes(m-SWCNTs),using radioisotope63 Ni as beta-emitting source.The ZNRAs were grown on Al-doped Zn O(AZO)conductive glass using hydrothermal method.The optimum length and diameter of Zn O nanorods were determined by Monte Carlo simulation for beta energy deposition in ZNRAs.The m-SWCNTs were anchored into the ZNRAs to form a three-dimensional(3-D)Schottky junction structure for effectively separating the beta/photo-excited electron-hole pairs.Experimentally,the betavoltaic and photovoltaic effects were confirmed through the I-V measurements of beta/photovoltaic cells under beta/UV/Vis irradiations,respectively.It is suggested that the m-SWCNTs play key role for the enhancement of beta/photovoltaic performance through the formation of extensive3-D Schottky junction,the conductive network for hole transport,and the surface plasmon resonance exciton absorption for visible light.展开更多
For many current betavoltaics, beta sources and PN junction energy conversion units are separated. The air gap between the two parts could stop part of decay beta particles, which results in inefficient performance of...For many current betavoltaics, beta sources and PN junction energy conversion units are separated. The air gap between the two parts could stop part of decay beta particles, which results in inefficient performance of the betavoltaic. By employing 63Ni with an apparent emission activity density of 7.26×10~7 and 1.81×10~8 Bq cm^(-2), betavoltaic performance levels were calculated at a vacuum degree range of 1×10~5 to 1×10^(-1) Pa and measured at 1.0×10~5 and 1.0×10~4 Pa, respectively. Results show that betavoltaic performance levels improve significantly as the vacuum degree increases. The maximum output power (P_(max)) exhibits the largest change, followed by short-circuit current (I_(sc)), open-circuit voltage (V_(oc)), and fill factor. The vacuum degree effects on Isc, Voc,and Pmax of the betavoltaic with low apparent activity density 63Ni are more significant than those of the betavoltaic with high apparent activity density ^(63)Ni. Moreover, the improved efficiencies of the measured performances are larger than the calculated efficiencies because of the low ratio of Isc and reverse saturation current (I_0). The values of I0, ideality factor, and shunt resistance were estimated to modify the equivalent circuit model. The calculation results based on this model are closer to the measurement results. The results of this research can provide a theoretical foundation and experimental reference for the study of vacuum degree effects on betavoltaics of the same kind.展开更多
A 4H–SiC–^(63)Ni p–n-junction-based betavoltaic battery is investigated. The Monte Carlo method is used to simulate the self-absorption effect of the ^(63)Ni source, the backscattering process, and the transport of...A 4H–SiC–^(63)Ni p–n-junction-based betavoltaic battery is investigated. The Monte Carlo method is used to simulate the self-absorption effect of the ^(63)Ni source, the backscattering process, and the transport of beta particles in 4H–SiC material. The main factors that affect the energy conversion efficiencies of the cell are analyzed. Based on the simulation results, it can be calculated that, when the thickness of the ^(63)Ni source increases from 2 ×10^(-3) to10 lm, the theoretical maximum device conversion efficiency increases from 16.77 to 23:51% and the total conversion efficiency decreases from 16.73 to 1:48%.Furthermore, a feasible design with a maximum output power density of 0:36 μW=cm^2 and an optimal device conversion efficiency of 23:5% is obtained.展开更多
Betavoltaic cells(BCs)are promising self-generating power cells with long life and high power density.However,the low energy conversion efficiency(ECE)has limitations in practical engineering applications.Widebandgap ...Betavoltaic cells(BCs)are promising self-generating power cells with long life and high power density.However,the low energy conversion efficiency(ECE)has limitations in practical engineering applications.Widebandgap semiconductors(WBGSs)with three-dimensional(3-D)nanostructures are ideal candidates for increasing the ECE of BCs.This paper proposes hydrothermally grown ZnO nanorod arrays(ZNRAs)for ^(63)Ni-powered BCs.A quantitative model was established for simulation using the parameter values of the dark characteristics,which were obtained from the experimental measurements for a simulated BC based on a Ni-incorporated ZNRAs structure.Monte Carlo(MC)modeling and simulation were conducted to obtain the values of the β energy deposited in ZNRAs with different nanorod spacings and heights.Through the simulation and optimization of the 3-D ZNRAs and 2-D ZnO bulk structures,the performance of the ^(63)Ni-powered BCs based on both structures was evaluated using a quantitative model.The BCs based on the 3-D ZNRAs structure and 2-D ZnO bulk structure achieved a maximum ECE of 10.1%and 4.69%,respectively,which indicates the significant superiority of 3-D nanostructured WBGSs in increasing the ECE of BCs.展开更多
Betavoltaic nuclear batteries offer a promising alternative energy source that harnesses the power of beta particles emitted by radioisotopes.To satisfy the power demands of microelectromechanical systems(MEMS),3D str...Betavoltaic nuclear batteries offer a promising alternative energy source that harnesses the power of beta particles emitted by radioisotopes.To satisfy the power demands of microelectromechanical systems(MEMS),3D structures have been proposed as a potential solution.Accordingly,this paper introduces a novel 3D^(63)Ni–SiC-based P^(+)PNN^(+)structure with a multi-groove design,avoiding the need for PN junctions on the inner surface,and thus reducing leakage current and power losses.Monte Carlo simulations were performed considering the fully coupled physical model to extend the electron–hole pair generation rate to a 3D structure,enabling the efficient design and development of betavoltaic batteries with complex 3D structures.As a result,the proposed model produces the significantly higher maximum output power density of 19.74μW/cm^(2) and corresponding short-circuit current,open-circuit voltage,and conversion efficiency of 8.57μA/cm^(2),2.45 V,and4.58%,respectively,compared with conventional planar batteries.From analysis of the carrier transport and collection characteristics using the COMSOL Multiphysics code,we provide deep insights regarding power increase,and elucidate the discrepancies between the ideal and simulated performances of betavoltaic batteries.Our work offers a promising approach for the design and optimization of high-output betavoltaic nuclear batteries with a unique 3D design,and serves as a valuable reference for future device fabrication.展开更多
In this work,neodymium(Nd)and samarium(Sm)codoped lead lanthanum zirconate titanate(PLZT)ceramics were prepared by a high-temperature solid-state method.The samples were characterized by X-ray diffraction,scanning ele...In this work,neodymium(Nd)and samarium(Sm)codoped lead lanthanum zirconate titanate(PLZT)ceramics were prepared by a high-temperature solid-state method.The samples were characterized by X-ray diffraction,scanning electron microscopy and ferroelectric analysis.Rare earth-doped PLZT ceramics show good phase formation.An appropriate rare earth element doping amount increases the densities of PLZT ceramics and reduces their resistivities,which is due to the role of rare earth elements in grain refinement.However,the increase in the amount of grain boundaries caused by grain refinement also affects domain inversion.Therefore,with increasing doping concentration,the remnant polarization of PLZT gradually decreases,and the doping of rare earth elements also slightly reduces the band gap of PLZT.Under irradiation with an X-ray simulated beta source with a particle energy of 10 keV(between the average energies of the beta particles of^3H and^(63)Ni),the ceramic sheets in this work produce current densities of up to 1.38 nA/cm^2.This indicates that Nd and Sm codoped PLZT ceramics have a certain potential for application in betavoltaic batteries.展开更多
Among the various micro-powers being investigated, betavoltaic batteries are very attractive for numerous applications because of their advantages of high energy density, long life, strong anti-interference, and so on...Among the various micro-powers being investigated, betavoltaic batteries are very attractive for numerous applications because of their advantages of high energy density, long life, strong anti-interference, and so on. Based on the basic principle of the betavoltaic effect, the current paper adopted the Monte Carlo N-Particle code to simulate the transport processes of β particles in semiconductor materials and to establish the calculation formulas for nuclear radiation-generated current, open circuit voltage, and so on. By discussing the effect of minority carrier diffusion length, doping concentration, and junction depth on the property of batteries, the present work concluded that the best parameters for batteries are the use of silicon and the radioisotope Ni-63, i.e., Ni-63 with a mass thickness of 1 mg/cm2, Na=1×1019 cm-3, Nd=3.16×1016 cm-3, junction area of 1 cm2, junction depth of 0.3 μm, and so on. Under these parameters the short-circuit current, open circuit voltage, output power, and conversion efficiency are 573.3 nA, 0.253 V, 99.85 nW, and 4.94%, respectively. Such parameters are valuable for micro-power fields, such as micro-electromechanical systems and pacemakers, among others.展开更多
GaN PIN betavoltaic nuclear batteries are demonstrated in this work. GaN epitaxial layers were grown on 2-inch sapphire sub-strates by MOCVD, and then the GaN PIN nuclear batteries were fabricated. Current-voltage （...GaN PIN betavoltaic nuclear batteries are demonstrated in this work. GaN epitaxial layers were grown on 2-inch sapphire sub-strates by MOCVD, and then the GaN PIN nuclear batteries were fabricated. Current-voltage （l-V） characteristic shows that the small leakage currents are 0.12 nA at 0 V and 1.76 nA at -10 V, respectively. With 147Pm the irradiation source, the maximum open circuit voltage and maximum short circuit current are 1.07 V and 0.554 nA, respectively. The fill factor （FF） of 24.7% for the battery was been obtained. The limited performance of the devices is mainly due to the low energy deposition in the microbatteries. Therefore, the GaN nuclear microbatteries are expected to be optimized by growing high quality GaN films, thin dead layer and so on.展开更多
The design scheme of a sandwich-structure betavoltaic microbattery based on silicon using63Ni is presented in this paper.This structure differs from a monolayer energy conversion unit.The optimization of various physi...The design scheme of a sandwich-structure betavoltaic microbattery based on silicon using63Ni is presented in this paper.This structure differs from a monolayer energy conversion unit.The optimization of various physical parameters and the effects of temperature on the microbattery were studied through MCNP.For the proposed optimization design,P-type silicon was used as the substrate for the betavoltaic microbattery.Based on the proposed theory,a sandwich microbattery with a shallow junction was fabricated.The temperature dependence of the device was also measured.The open-circuit voltaic(Voc)temperature dependence of the optimized sandwich betavoltaic microbattery was linear.However,the Voc of the betavoltaic microbattery with a high-resistance substrate exponentially decreased over the range of room temperature in the experiment and simulation.In addition,the sandwich betavoltaic microbattery offered higher power than the monolayer betavoltaic one.The results of this paper provide a significant technical reference for optimizing the design and studying temperature effects on betavoltaics of the same type.展开更多
The sensitivities of betavoltaic batteries and photovoltaic batteries to series and parallel resistance are studied.Based on the study,an electrode pattern design principle of GaAs betavoltaic batteries is proposed.Ga...The sensitivities of betavoltaic batteries and photovoltaic batteries to series and parallel resistance are studied.Based on the study,an electrode pattern design principle of GaAs betavoltaic batteries is proposed.GaAs PIN junctions with and without the proposed electrode pattern are fabricated and measured under the illumination of ^（63）Ni.Results show that the proposed electrode can reduce the backscattering and shadowing for the beta particles from ^（63）Ni to increase the GaAs betavoltaic battery short circuit currents effectively but has little impact on the fill factors and ideal factors.展开更多
Isotope source energy deposition along the thickness direction of a semiconductor is calculated,based upon which an ideal short current is evaluated for betavoltaic batteries.Electron-hole pair recombination and drift...Isotope source energy deposition along the thickness direction of a semiconductor is calculated,based upon which an ideal short current is evaluated for betavoltaic batteries.Electron-hole pair recombination and drifting length in a PN junction built-in electric field are extracted by comparing the measured short currents with the ideal short currents.A built-in electric field thickness design principle is proposed for betavoltaic batteries：after measuring the energy deposition depth and the carrier drift length,the shorter one should then be chosen as the built-in electric field thickness.If the energy deposition depth is much larger than the carrier drift length,a multi-junction is preferred in betavoltaic batteries and the number of the junctions should be the value of the deposition depth divided by the drift length.展开更多
基金the financial support of the project from the National Natural Science Foundation of China(Grant No.61574117)the Natural Science Foundation of Guangdong Province(Grant No.2018B030311002)the China Scholarship Council(Grant No.201806310044)。
文摘A full-duplex radiant energy converter based on both betavoltaic and photovoltaic effects in an easyto-implement way is an attractive alternative for the autonomous wireless sensor microsystem.Here,we report a novel beta/photovoltaic cell based on free-standing Zn O nanorod arrays(ZNRAs)modified with metallic single-walled carbon nanotubes(m-SWCNTs),using radioisotope63 Ni as beta-emitting source.The ZNRAs were grown on Al-doped Zn O(AZO)conductive glass using hydrothermal method.The optimum length and diameter of Zn O nanorods were determined by Monte Carlo simulation for beta energy deposition in ZNRAs.The m-SWCNTs were anchored into the ZNRAs to form a three-dimensional(3-D)Schottky junction structure for effectively separating the beta/photo-excited electron-hole pairs.Experimentally,the betavoltaic and photovoltaic effects were confirmed through the I-V measurements of beta/photovoltaic cells under beta/UV/Vis irradiations,respectively.It is suggested that the m-SWCNTs play key role for the enhancement of beta/photovoltaic performance through the formation of extensive3-D Schottky junction,the conductive network for hole transport,and the surface plasmon resonance exciton absorption for visible light.
基金supported by the National Natural Science Foundation of China (Grant Nos. 11505096 & 11675076)the National Defense Basic Scientific Research Project (Grant No. JCKY2016605C006)+5 种基金the Natural Science Foundation of Jiangsu Province (Grant No. BK20150735)the Shanghai Aerospace Science and Technology Innovation Fundthe Jiangsu Planned Projects for Postdoctoral Research Funds (Grant No. 1601139B)the Foundation of Graduate Innovation Center in NUAA (Grant No.kfjj20160609)the Priority Academic Program Development of Jiangsu Higher Education Institutionsthe Fundamental Research Funds for the Central Universities (Grant No. NJ20160031)
文摘For many current betavoltaics, beta sources and PN junction energy conversion units are separated. The air gap between the two parts could stop part of decay beta particles, which results in inefficient performance of the betavoltaic. By employing 63Ni with an apparent emission activity density of 7.26×10~7 and 1.81×10~8 Bq cm^(-2), betavoltaic performance levels were calculated at a vacuum degree range of 1×10~5 to 1×10^(-1) Pa and measured at 1.0×10~5 and 1.0×10~4 Pa, respectively. Results show that betavoltaic performance levels improve significantly as the vacuum degree increases. The maximum output power (P_(max)) exhibits the largest change, followed by short-circuit current (I_(sc)), open-circuit voltage (V_(oc)), and fill factor. The vacuum degree effects on Isc, Voc,and Pmax of the betavoltaic with low apparent activity density 63Ni are more significant than those of the betavoltaic with high apparent activity density ^(63)Ni. Moreover, the improved efficiencies of the measured performances are larger than the calculated efficiencies because of the low ratio of Isc and reverse saturation current (I_0). The values of I0, ideality factor, and shunt resistance were estimated to modify the equivalent circuit model. The calculation results based on this model are closer to the measurement results. The results of this research can provide a theoretical foundation and experimental reference for the study of vacuum degree effects on betavoltaics of the same kind.
基金supported by the National Major Scientific Instruments and Equipment Development Project(No.2012YQ240121)the National Natural Science Foundation of China(No.11075064)
文摘A 4H–SiC–^(63)Ni p–n-junction-based betavoltaic battery is investigated. The Monte Carlo method is used to simulate the self-absorption effect of the ^(63)Ni source, the backscattering process, and the transport of beta particles in 4H–SiC material. The main factors that affect the energy conversion efficiencies of the cell are analyzed. Based on the simulation results, it can be calculated that, when the thickness of the ^(63)Ni source increases from 2 ×10^(-3) to10 lm, the theoretical maximum device conversion efficiency increases from 16.77 to 23:51% and the total conversion efficiency decreases from 16.73 to 1:48%.Furthermore, a feasible design with a maximum output power density of 0:36 μW=cm^2 and an optimal device conversion efficiency of 23:5% is obtained.
基金supported by the National Natural Science Foundation of China(Nos.12175190 and U2241284)the National Key R&D Program of China(Nos.SQ2022YFB190165)+1 种基金the Natural Science Foundation of Fujian Province,China(No.2022J02006)the Special Funds for Central Government Guiding Shenzhen Development in Science and Technology,China(No.2021Szvup066).
文摘Betavoltaic cells(BCs)are promising self-generating power cells with long life and high power density.However,the low energy conversion efficiency(ECE)has limitations in practical engineering applications.Widebandgap semiconductors(WBGSs)with three-dimensional(3-D)nanostructures are ideal candidates for increasing the ECE of BCs.This paper proposes hydrothermally grown ZnO nanorod arrays(ZNRAs)for ^(63)Ni-powered BCs.A quantitative model was established for simulation using the parameter values of the dark characteristics,which were obtained from the experimental measurements for a simulated BC based on a Ni-incorporated ZNRAs structure.Monte Carlo(MC)modeling and simulation were conducted to obtain the values of the β energy deposited in ZNRAs with different nanorod spacings and heights.Through the simulation and optimization of the 3-D ZNRAs and 2-D ZnO bulk structures,the performance of the ^(63)Ni-powered BCs based on both structures was evaluated using a quantitative model.The BCs based on the 3-D ZNRAs structure and 2-D ZnO bulk structure achieved a maximum ECE of 10.1%and 4.69%,respectively,which indicates the significant superiority of 3-D nanostructured WBGSs in increasing the ECE of BCs.
基金supported by Anhui Provincial Key R&D Program(No.202104g0102007)Jiangxi Provincial Department of Education Science and Technology Research Youth Project(GJJ200763)+3 种基金Hubei Provincial Natural Science Foundation of China(No.2022CFB575)Hefei Municipal Natural Science Foundation(No.2022011)Ministry of Education Industry-Education Cooperation Project(No.202102647014)Science Island Graduate Innovation and Entrepreneurship Fund Project(No.KY-2022-SC-04)。
文摘Betavoltaic nuclear batteries offer a promising alternative energy source that harnesses the power of beta particles emitted by radioisotopes.To satisfy the power demands of microelectromechanical systems(MEMS),3D structures have been proposed as a potential solution.Accordingly,this paper introduces a novel 3D^(63)Ni–SiC-based P^(+)PNN^(+)structure with a multi-groove design,avoiding the need for PN junctions on the inner surface,and thus reducing leakage current and power losses.Monte Carlo simulations were performed considering the fully coupled physical model to extend the electron–hole pair generation rate to a 3D structure,enabling the efficient design and development of betavoltaic batteries with complex 3D structures.As a result,the proposed model produces the significantly higher maximum output power density of 19.74μW/cm^(2) and corresponding short-circuit current,open-circuit voltage,and conversion efficiency of 8.57μA/cm^(2),2.45 V,and4.58%,respectively,compared with conventional planar batteries.From analysis of the carrier transport and collection characteristics using the COMSOL Multiphysics code,we provide deep insights regarding power increase,and elucidate the discrepancies between the ideal and simulated performances of betavoltaic batteries.Our work offers a promising approach for the design and optimization of high-output betavoltaic nuclear batteries with a unique 3D design,and serves as a valuable reference for future device fabrication.
基金the Independent Deployment Project of Fujian Science&Technology Innovation Laboratory for Optoelectronic Information of China(2021ZZ109)the National Key Research and Development Program of China(2019YFC0605000)+2 种基金the Independent Deployment Project of Ganjiang Innovation Research Institute of Chinese Academy of Sciences(E055A002)the Key Deployment Project of the Chinese Academy of Sciences(ZDRW-CN-2021-3)the Fujian Provincial Natural Fund Project(2021J05101)。
文摘In this work,neodymium(Nd)and samarium(Sm)codoped lead lanthanum zirconate titanate(PLZT)ceramics were prepared by a high-temperature solid-state method.The samples were characterized by X-ray diffraction,scanning electron microscopy and ferroelectric analysis.Rare earth-doped PLZT ceramics show good phase formation.An appropriate rare earth element doping amount increases the densities of PLZT ceramics and reduces their resistivities,which is due to the role of rare earth elements in grain refinement.However,the increase in the amount of grain boundaries caused by grain refinement also affects domain inversion.Therefore,with increasing doping concentration,the remnant polarization of PLZT gradually decreases,and the doping of rare earth elements also slightly reduces the band gap of PLZT.Under irradiation with an X-ray simulated beta source with a particle energy of 10 keV(between the average energies of the beta particles of^3H and^(63)Ni),the ceramic sheets in this work produce current densities of up to 1.38 nA/cm^2.This indicates that Nd and Sm codoped PLZT ceramics have a certain potential for application in betavoltaic batteries.
基金supported by the China Postdoctoral Science Foundation Funded Project (Grant No. 20100481140)the Nanjing University of Aeronautics and Astronautics Basic Research Funded Project (Grant No. Y1065-063)
文摘Among the various micro-powers being investigated, betavoltaic batteries are very attractive for numerous applications because of their advantages of high energy density, long life, strong anti-interference, and so on. Based on the basic principle of the betavoltaic effect, the current paper adopted the Monte Carlo N-Particle code to simulate the transport processes of β particles in semiconductor materials and to establish the calculation formulas for nuclear radiation-generated current, open circuit voltage, and so on. By discussing the effect of minority carrier diffusion length, doping concentration, and junction depth on the property of batteries, the present work concluded that the best parameters for batteries are the use of silicon and the radioisotope Ni-63, i.e., Ni-63 with a mass thickness of 1 mg/cm2, Na=1×1019 cm-3, Nd=3.16×1016 cm-3, junction area of 1 cm2, junction depth of 0.3 μm, and so on. Under these parameters the short-circuit current, open circuit voltage, output power, and conversion efficiency are 573.3 nA, 0.253 V, 99.85 nW, and 4.94%, respectively. Such parameters are valuable for micro-power fields, such as micro-electromechanical systems and pacemakers, among others.
基金supported by the National Natural Science Foundation of China(Grant No.10875084)the Natural Science Foundation of Jiangsu Province(Grant No.BK2008174)+2 种基金the Applied Science Foundation of Suzhou(Grant No.SYJG0915)the National Basic Research Program of China(Grant No.G2009CB929300)supported by Department of Nuclear Science and Engineering,Nanjing University of Aeronautics and Astronautics
文摘GaN PIN betavoltaic nuclear batteries are demonstrated in this work. GaN epitaxial layers were grown on 2-inch sapphire sub-strates by MOCVD, and then the GaN PIN nuclear batteries were fabricated. Current-voltage （l-V） characteristic shows that the small leakage currents are 0.12 nA at 0 V and 1.76 nA at -10 V, respectively. With 147Pm the irradiation source, the maximum open circuit voltage and maximum short circuit current are 1.07 V and 0.554 nA, respectively. The fill factor （FF） of 24.7% for the battery was been obtained. The limited performance of the devices is mainly due to the low energy deposition in the microbatteries. Therefore, the GaN nuclear microbatteries are expected to be optimized by growing high quality GaN films, thin dead layer and so on.
基金supported by the National Natural Science Foundation of China(Grant No.11205088)the Aeronautical Science Foundation of China(Grant No.2012ZB52021)+1 种基金the Funding of Jiangsu Innovation Program for Graduate Education(Grant No.CXZZ12_0146)Fundamental Research Funds for the Central Universities
文摘The design scheme of a sandwich-structure betavoltaic microbattery based on silicon using63Ni is presented in this paper.This structure differs from a monolayer energy conversion unit.The optimization of various physical parameters and the effects of temperature on the microbattery were studied through MCNP.For the proposed optimization design,P-type silicon was used as the substrate for the betavoltaic microbattery.Based on the proposed theory,a sandwich microbattery with a shallow junction was fabricated.The temperature dependence of the device was also measured.The open-circuit voltaic(Voc)temperature dependence of the optimized sandwich betavoltaic microbattery was linear.However,the Voc of the betavoltaic microbattery with a high-resistance substrate exponentially decreased over the range of room temperature in the experiment and simulation.In addition,the sandwich betavoltaic microbattery offered higher power than the monolayer betavoltaic one.The results of this paper provide a significant technical reference for optimizing the design and studying temperature effects on betavoltaics of the same type.
基金Project supported by the National Natural Science Foundation of China(Nos.90923039 and 51025521)the 111 Project of China(No. B08043)
文摘The sensitivities of betavoltaic batteries and photovoltaic batteries to series and parallel resistance are studied.Based on the study,an electrode pattern design principle of GaAs betavoltaic batteries is proposed.GaAs PIN junctions with and without the proposed electrode pattern are fabricated and measured under the illumination of ^（63）Ni.Results show that the proposed electrode can reduce the backscattering and shadowing for the beta particles from ^（63）Ni to increase the GaAs betavoltaic battery short circuit currents effectively but has little impact on the fill factors and ideal factors.
基金Project supported by the National Natural Science Foundation of China(Nos.90923039,51025521)the 111 Project of China(No. B08043)
文摘Isotope source energy deposition along the thickness direction of a semiconductor is calculated,based upon which an ideal short current is evaluated for betavoltaic batteries.Electron-hole pair recombination and drifting length in a PN junction built-in electric field are extracted by comparing the measured short currents with the ideal short currents.A built-in electric field thickness design principle is proposed for betavoltaic batteries：after measuring the energy deposition depth and the carrier drift length,the shorter one should then be chosen as the built-in electric field thickness.If the energy deposition depth is much larger than the carrier drift length,a multi-junction is preferred in betavoltaic batteries and the number of the junctions should be the value of the deposition depth divided by the drift length.
