A self-centering bridge bent equipped with energy-dissipation(ED)beams is proposed.Quasi-static tests are conducted on self-centering bridge bents,both with and without ED beams,to validate the accuracy of the corresp...A self-centering bridge bent equipped with energy-dissipation(ED)beams is proposed.Quasi-static tests are conducted on self-centering bridge bents,both with and without ED beams,to validate the accuracy of the corresponding numerical models.The effects of various param-eters,such as the web area of ED beams,prestressing force of tendons,tendon arrangements,and number of column segments,on the seismic performance of self-centering bridge bents with ED beams are evaluated using the validated numerical model.The results demonstrate that the nu-merical models accurately replicate the quasi-static test results,with average errors in the lateral force remaining below 9.6%.The web area of ED beams significantly affects the strength,cumulative energy dissipation,and relative self-centering index(RSI)of the self-centering bridge bents.Increasing the prestressing force enhances the lateral force and self-centering capability of the bridge bents but has minimal effect on their ED capacity.Reducing the num-ber of segments in each column enhances the lateral force and cumulative hysteretic energy dissipation of the self-centering bridge bents while exerting an insignificant effect on the RSI.Thus,the proposed novel system is highly suitable for doubleor multicolumn piers supporting bridges in regions prone to strong earthquakes.展开更多
GaN-based devices have developed significantly in recent years due to their promising applications and research potential.A major goal is to monolithically integrate various GaN-based components onto a single chip to ...GaN-based devices have developed significantly in recent years due to their promising applications and research potential.A major goal is to monolithically integrate various GaN-based components onto a single chip to create future optoelectronic systems with low power consumption.This miniaturized integration not only enhances multifunctional performance but also reduces material,processing,and packaging costs.In this study,we present an optoelectronic on-chip system fabricated using a top-down approach on a III-nitride-on-silicon wafer.The system includes a near-ultraviolet light source,a monitor,a 180°bent waveguide,an electro-absorption modulator,and a receiver,all integrated without the need for regrowth or post-growth doping.35 Mbit/s optical data communication is demonstrated through light propagation within the system,confirming its potential for compact GaN-based optoelectronic solutions.展开更多
基金The National Natural Science Foundation of China(No.52278189)Zhejiang Provincial Natural Science Foundation of China(No.LY24E080002).
文摘A self-centering bridge bent equipped with energy-dissipation(ED)beams is proposed.Quasi-static tests are conducted on self-centering bridge bents,both with and without ED beams,to validate the accuracy of the corresponding numerical models.The effects of various param-eters,such as the web area of ED beams,prestressing force of tendons,tendon arrangements,and number of column segments,on the seismic performance of self-centering bridge bents with ED beams are evaluated using the validated numerical model.The results demonstrate that the nu-merical models accurately replicate the quasi-static test results,with average errors in the lateral force remaining below 9.6%.The web area of ED beams significantly affects the strength,cumulative energy dissipation,and relative self-centering index(RSI)of the self-centering bridge bents.Increasing the prestressing force enhances the lateral force and self-centering capability of the bridge bents but has minimal effect on their ED capacity.Reducing the num-ber of segments in each column enhances the lateral force and cumulative hysteretic energy dissipation of the self-centering bridge bents while exerting an insignificant effect on the RSI.Thus,the proposed novel system is highly suitable for doubleor multicolumn piers supporting bridges in regions prone to strong earthquakes.
基金This work was supported in part by the National Natural Science Founda⁃tion of China under Grant No.U21A20495National Key Research and De⁃velopment Program of China under Grant No.2022YFE0112000High⁃er Education Discipline Innovation Project under Grant No.D17018.
文摘GaN-based devices have developed significantly in recent years due to their promising applications and research potential.A major goal is to monolithically integrate various GaN-based components onto a single chip to create future optoelectronic systems with low power consumption.This miniaturized integration not only enhances multifunctional performance but also reduces material,processing,and packaging costs.In this study,we present an optoelectronic on-chip system fabricated using a top-down approach on a III-nitride-on-silicon wafer.The system includes a near-ultraviolet light source,a monitor,a 180°bent waveguide,an electro-absorption modulator,and a receiver,all integrated without the need for regrowth or post-growth doping.35 Mbit/s optical data communication is demonstrated through light propagation within the system,confirming its potential for compact GaN-based optoelectronic solutions.
