Co-precipitation method and conventional solid-state reaction technique were used to synthesize BaSnO3 nanoparticles and (BaSnO3)x/Bi1.6Pb0.4Sr2Ca2Cu3O10+δ (0≤x≤ 1.50w t％) samples,respectively.X-ray powder diffrac...Co-precipitation method and conventional solid-state reaction technique were used to synthesize BaSnO3 nanoparticles and (BaSnO3)x/Bi1.6Pb0.4Sr2Ca2Cu3O10+δ (0≤x≤ 1.50w t％) samples,respectively.X-ray powder diffraction (XRD),scanning electron microscopy (SEM),and electrical resistivity data were used to characterize BiPb-2223 phase added by BaSnO3 nanoparticles.The relative volume fraction and superconducting transition temperature Tc of BiPb-2223 phase were enhanced by increasing BaSnO3 addition up to 0.50 wt％.These parameters were decreased with further increase of x.The resistive transition broadening under different applied DC magnetic fields (0.29-4.40kG) was analyzed through thermally activated flux creep (TAFC) model and Ambegaokar-Halperin (AH) theory.Improvements of the derived flux pinning energy U,critical current density Jc (0) estimated from AH parameter C(B),and upper critical magnetic field Bc2 (0),were recorded by adding BaSnO3 nanoparticles up to 0.50 wt％,beyond which these parameters were suppressed.The magnetic field dependence of the flux pinning energy and critical current density decreased as a power-law relation,which indicated the single junction sensitivity between the superconducting grains to the applied magnetic field.Furthermore,the increase in the applied magnetic field did not affect the electronic thermal conductivity Ke above the superconducting transition temperature and suppressed it below Tc.展开更多
The fully transparent indium-tin-oxide/BaSnO3/F-doped SnO2 devices that show a stable bipolar resistance switching effect are successfully fabricated. In addition to the transmittance being above 87% for visible light...The fully transparent indium-tin-oxide/BaSnO3/F-doped SnO2 devices that show a stable bipolar resistance switching effect are successfully fabricated. In addition to the transmittance being above 87% for visible light, an initial forming process is unnecessary for the production of transparent memory. Fittings to the current-voltage curves reveal the interfacial conduction in the devices. The first-principles calculation indicates that the oxygen vacancies in cubic BaSnO3 will form the defective energy level below the bottom of conduction band. The field-induced resistance change can be explained based on the change of the interracial Schottky barrier, due to the migration of oxygen vacancies in the vicinity of the interface. This work presents a candidate material BaSnO3 for the application of resistive random access memory to transparent electronics.展开更多
文摘Co-precipitation method and conventional solid-state reaction technique were used to synthesize BaSnO3 nanoparticles and (BaSnO3)x/Bi1.6Pb0.4Sr2Ca2Cu3O10+δ (0≤x≤ 1.50w t％) samples,respectively.X-ray powder diffraction (XRD),scanning electron microscopy (SEM),and electrical resistivity data were used to characterize BiPb-2223 phase added by BaSnO3 nanoparticles.The relative volume fraction and superconducting transition temperature Tc of BiPb-2223 phase were enhanced by increasing BaSnO3 addition up to 0.50 wt％.These parameters were decreased with further increase of x.The resistive transition broadening under different applied DC magnetic fields (0.29-4.40kG) was analyzed through thermally activated flux creep (TAFC) model and Ambegaokar-Halperin (AH) theory.Improvements of the derived flux pinning energy U,critical current density Jc (0) estimated from AH parameter C(B),and upper critical magnetic field Bc2 (0),were recorded by adding BaSnO3 nanoparticles up to 0.50 wt％,beyond which these parameters were suppressed.The magnetic field dependence of the flux pinning energy and critical current density decreased as a power-law relation,which indicated the single junction sensitivity between the superconducting grains to the applied magnetic field.Furthermore,the increase in the applied magnetic field did not affect the electronic thermal conductivity Ke above the superconducting transition temperature and suppressed it below Tc.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.11174135 and 60976016)the National 973 Project,China(Gant No.0213117005)+3 种基金the State Key Program for Basic Research of China(Grant No.2010CB630704)the Science Foundation of Henan Province,China(Grant No.14A430020)the Science Foundation of Henan University,China(Grant No.SBGJ090503)China Postdoctoral Science Foundation(Grant No.2012M511250)
文摘The fully transparent indium-tin-oxide/BaSnO3/F-doped SnO2 devices that show a stable bipolar resistance switching effect are successfully fabricated. In addition to the transmittance being above 87% for visible light, an initial forming process is unnecessary for the production of transparent memory. Fittings to the current-voltage curves reveal the interfacial conduction in the devices. The first-principles calculation indicates that the oxygen vacancies in cubic BaSnO3 will form the defective energy level below the bottom of conduction band. The field-induced resistance change can be explained based on the change of the interracial Schottky barrier, due to the migration of oxygen vacancies in the vicinity of the interface. This work presents a candidate material BaSnO3 for the application of resistive random access memory to transparent electronics.
