The aim of this work was to investigate the effects of low-resistivity interlayer on the physical properties of periodic Ba_（0.9）Sr_（0.1）Ti_（0.99）Mn_（0.01）O_3（BSTM） multilayers prepared by a chemical solutio...The aim of this work was to investigate the effects of low-resistivity interlayer on the physical properties of periodic Ba_（0.9）Sr_（0.1）Ti_（0.99）Mn_（0.01）O_3（BSTM） multilayers prepared by a chemical solution deposition method. A LaNiO_3（LNO） layer was inserted into the periodic BSTM multilayer artificially to form a sandwiched configuration of BSTM/LNO/BSTM. The capacitances at low frequencies（〈100 k Hz） of the sandwiched multilayer are significantly enhanced compared to that of the pure BSTM multilayer. The space charge accumulated at the LNO layer was proposed to explain the enhancement based on Maxwell-Wagner（M-W） model. However, LNO interlayer leads to an increase in the leakage current. A non-Ohmic conduction region is observed for BSTM/LNO/BSTM multilayer when the electric field exceeds 100 k V/cm. The results offer a new approach to achieve dielectric films with high dielectric constant.展开更多
基金Funded by the National Natural Science Foundation of China(No.61106126)Jiangsu Qing Lan Project
文摘The aim of this work was to investigate the effects of low-resistivity interlayer on the physical properties of periodic Ba_（0.9）Sr_（0.1）Ti_（0.99）Mn_（0.01）O_3（BSTM） multilayers prepared by a chemical solution deposition method. A LaNiO_3（LNO） layer was inserted into the periodic BSTM multilayer artificially to form a sandwiched configuration of BSTM/LNO/BSTM. The capacitances at low frequencies（〈100 k Hz） of the sandwiched multilayer are significantly enhanced compared to that of the pure BSTM multilayer. The space charge accumulated at the LNO layer was proposed to explain the enhancement based on Maxwell-Wagner（M-W） model. However, LNO interlayer leads to an increase in the leakage current. A non-Ohmic conduction region is observed for BSTM/LNO/BSTM multilayer when the electric field exceeds 100 k V/cm. The results offer a new approach to achieve dielectric films with high dielectric constant.
