This paper presents the benchmark test results on the symmetry and continuity characteristics between BSIM4 from Berkeley and ULTRA-BULK from Peking University. It is shown that the industry standard model BSIM4 has a...This paper presents the benchmark test results on the symmetry and continuity characteristics between BSIM4 from Berkeley and ULTRA-BULK from Peking University. It is shown that the industry standard model BSIM4 has a series of the shortcomings of the continuity and symmetry, such as the charge, high-order current derivatives, and the trans-capacitances while the latest advanced surface-potential based MOSFET compact model, ULTRA-BULK, demonstrates all necessary continuity and symmetry characteristics, which are very important for analog and RF circuit design.展开更多
The continued development of CMOS technology and the emergence of new applications demand continued improvement and enhancement of compact models. This paper outlines the recent work of the BSIM project at the Univers...The continued development of CMOS technology and the emergence of new applications demand continued improvement and enhancement of compact models. This paper outlines the recent work of the BSIM project at the University of California, Berkeley,including BSIM5 research, BSIM4 enhancements, and BSIMSOI development. BSIM5 addresses the needs of nano-CMOS technology and RF high-speed CMOS circuit simulation. BSIM4 is a mature industrial standard MOSFET model with several improvements to meet the technology requirements. BSIMSOI is developed into a generic model framework for PD and FD SOI technology. An operation mode choice,via the calculation of the body potential △Vbi and body current/charge,helps circuit designers in the trend of the coexistence of PD and FD devices.展开更多
基金supported by the National Natural Science Foundation of China (No. 90607017)the Scientific Research Foundation for theReturned Oversea Chinese Scholars, State Education Ministry of China.
文摘This paper presents the benchmark test results on the symmetry and continuity characteristics between BSIM4 from Berkeley and ULTRA-BULK from Peking University. It is shown that the industry standard model BSIM4 has a series of the shortcomings of the continuity and symmetry, such as the charge, high-order current derivatives, and the trans-capacitances while the latest advanced surface-potential based MOSFET compact model, ULTRA-BULK, demonstrates all necessary continuity and symmetry characteristics, which are very important for analog and RF circuit design.
文摘The continued development of CMOS technology and the emergence of new applications demand continued improvement and enhancement of compact models. This paper outlines the recent work of the BSIM project at the University of California, Berkeley,including BSIM5 research, BSIM4 enhancements, and BSIMSOI development. BSIM5 addresses the needs of nano-CMOS technology and RF high-speed CMOS circuit simulation. BSIM4 is a mature industrial standard MOSFET model with several improvements to meet the technology requirements. BSIMSOI is developed into a generic model framework for PD and FD SOI technology. An operation mode choice,via the calculation of the body potential △Vbi and body current/charge,helps circuit designers in the trend of the coexistence of PD and FD devices.
