Ultra thin epitaxial CoSi 2 films are fabricated by solid state reaction of a deposited bilayer of Co(3nm)/Ti (1nm) on n Si(100) substrates at different temperatures.The local barrier heights of the CoSi 2/Si cont...Ultra thin epitaxial CoSi 2 films are fabricated by solid state reaction of a deposited bilayer of Co(3nm)/Ti (1nm) on n Si(100) substrates at different temperatures.The local barrier heights of the CoSi 2/Si contacts are determined by using the ballistic electron emission microscopy (BEEM) and its spectroscopy (BEES) at low temperature.For CoSi 2/Si contact annealed at 800℃,the spatial distribution of barrier heights,which have mean barrier height of 599meV and a standard deviation of 21meV,obeys the Gaussian Function.However,for a sample that is annealed at 700℃,the barrier heights of it are more inhomogenous.Its local barrier heights range from 152meV to 870meV,which implies the large inhomogeneity of the CoSi 2 film.展开更多
文摘Ultra thin epitaxial CoSi 2 films are fabricated by solid state reaction of a deposited bilayer of Co(3nm)/Ti (1nm) on n Si(100) substrates at different temperatures.The local barrier heights of the CoSi 2/Si contacts are determined by using the ballistic electron emission microscopy (BEEM) and its spectroscopy (BEES) at low temperature.For CoSi 2/Si contact annealed at 800℃,the spatial distribution of barrier heights,which have mean barrier height of 599meV and a standard deviation of 21meV,obeys the Gaussian Function.However,for a sample that is annealed at 700℃,the barrier heights of it are more inhomogenous.Its local barrier heights range from 152meV to 870meV,which implies the large inhomogeneity of the CoSi 2 film.
