In this work, the influence of imparity on BECs in optical lattices is investigated, and the possibility of MI-SF transition induced by impurity is verified. After the numerical calculation, the schematic phase diagra...In this work, the influence of imparity on BECs in optical lattices is investigated, and the possibility of MI-SF transition induced by impurity is verified. After the numerical calculation, the schematic phase diagram is discussed with an emphasis on the role of impurity. When n10 = n20, the phase boundaries coincide with each other; when n10 【 n20 and U12 【 0, the phase boundaries do not intersect at all; when n10 【 n20 and U12 】 0, the phase boundaries may or may not intersect, depending on the values of U12, n10 and n20.展开更多
A Bose-Einstein condensate (BEC) is a topic of significant interest within the scientific community. It is well understood that Rb-87 and Yb2Si2O7 have been utilized in experiments to explore this phenomenon. These st...A Bose-Einstein condensate (BEC) is a topic of significant interest within the scientific community. It is well understood that Rb-87 and Yb2Si2O7 have been utilized in experiments to explore this phenomenon. These studies have demonstrated that these materials can achieve the BEC phase, a state that has been experimentally validated. In this paper, we further establish, from the perspective of theoretical physics, that silicon is also capable of exhibiting BEC properties. Our approach differs from prior studies in that it uses innovatively certain boundary conditions. Specifically, we employed Yb-70 as a gamma-ray radiation source and a 1 nm linewidth (as the half-width of a 2 nm line). Additionally, we utilized the concept of half-value thickness from nuclear physics absorption models to optimize the semiconductor process. This method effectively removes ytterbium (Yb) during the process, leaving only silicon, silicon-based materials, or silicon topological superconductors on the wafer. This technical procedure results in the creation of “BEC silicon” at absolute zero temperature (0 K), introducing a novel material for BEC realization.展开更多
文摘In this work, the influence of imparity on BECs in optical lattices is investigated, and the possibility of MI-SF transition induced by impurity is verified. After the numerical calculation, the schematic phase diagram is discussed with an emphasis on the role of impurity. When n10 = n20, the phase boundaries coincide with each other; when n10 【 n20 and U12 【 0, the phase boundaries do not intersect at all; when n10 【 n20 and U12 】 0, the phase boundaries may or may not intersect, depending on the values of U12, n10 and n20.
文摘A Bose-Einstein condensate (BEC) is a topic of significant interest within the scientific community. It is well understood that Rb-87 and Yb2Si2O7 have been utilized in experiments to explore this phenomenon. These studies have demonstrated that these materials can achieve the BEC phase, a state that has been experimentally validated. In this paper, we further establish, from the perspective of theoretical physics, that silicon is also capable of exhibiting BEC properties. Our approach differs from prior studies in that it uses innovatively certain boundary conditions. Specifically, we employed Yb-70 as a gamma-ray radiation source and a 1 nm linewidth (as the half-width of a 2 nm line). Additionally, we utilized the concept of half-value thickness from nuclear physics absorption models to optimize the semiconductor process. This method effectively removes ytterbium (Yb) during the process, leaving only silicon, silicon-based materials, or silicon topological superconductors on the wafer. This technical procedure results in the creation of “BEC silicon” at absolute zero temperature (0 K), introducing a novel material for BEC realization.
