The biaxially textured ion beam-assisted deposited(IBAD)-MgO templates were successfully prepared on polycrystalline Hastelloy metal substrate with reel-to-reel system for YB2Cu3O7-d(YBCO)-coated conductors.By the sol...The biaxially textured ion beam-assisted deposited(IBAD)-MgO templates were successfully prepared on polycrystalline Hastelloy metal substrate with reel-to-reel system for YB2Cu3O7-d(YBCO)-coated conductors.By the solution deposition planarization technique,amorphous Y2O3films were coated on untreated Hastelloy substrate as the bed layer to obtain smooth,dense,and crack-free surface for subsequent IBAD-MgO deposition.The 50 m long IBAD-MgO and homo-epitaxial(epi)-MgO buffer layers deposited on Y2O3films exhibit excellent crystallographic consistency along the scope with full width half maximum(FWHM)values of(110)DU and(200)Dx in the range of 5.5°–6.0°and3.0°–3.5°,respectively.To match the lattice constant of YBCO material,LaMnO3cap layer was fabricated on IBAD-MgO templates by radio frequency(rf)magnetron sputtering with the FWHM values of in-plane and out-ofplane of 6.8°and 3.7°,respectively,indicating excellent biaxial texture.展开更多
This study investigated the effects of annealing and discharging on the characteristics of MgO thin films prepared by ion beam-assisted deposition as a protective layer of AC-PDP. By an annealing process at a temperat...This study investigated the effects of annealing and discharging on the characteristics of MgO thin films prepared by ion beam-assisted deposition as a protective layer of AC-PDP. By an annealing process at a temperature of 450 ℃ for more than three hours, the crystallinity of the deposited MgO films was improved, but the surface of the （200）-oriented MgO thin films in the vicinity of the discharge electrodes, especially on the inner sides of the electrodes, was subjected to crack formation to the compressive stress of The failure mechanism of the MgO films plus the additional （200）-oriented MgO films was due compressive stress induced by the differences in the coefficient of thermal expansion between the electrode and the dielectric layer. In the discharging process, all MgO films were eroded unevenly, and the serious erosion occurred near the edges of the discharge electrodes. ATM（atomic force microscopy） images show that the eroded surface of the （200）-oriented MgO thin film is smoother than that of the （111）-oriented fihn. Also, the （200）-oriented MgO thin film shows an improved ability to resist ion erosion compared to the （111）-oriented film.展开更多
β-C<sub>3</sub>N<sub>4</sub> compound is a new hard material predicted by Liu and Cohen with theoretical calculation and so far it has not been found out in nature. In was assumed that the β-...β-C<sub>3</sub>N<sub>4</sub> compound is a new hard material predicted by Liu and Cohen with theoretical calculation and so far it has not been found out in nature. In was assumed that the β-C<sub>3</sub>N<sub>4</sub> compound would adopt the known crystal structure of β-Si<sub>3</sub>N<sub>4</sub>, which constructed a network of CN<sub>4</sub> tetrahedra linked at the corners by threefold coordinate N atoms. Thus, the atomic coordination of β-C<sub>3</sub>N<sub>4</sub> is sp<sup>3</sup> hybrids on the C atoms and sp<sup>2</sup> hybrids on the N atoms. Based on the theoretical analysis and modeling calculation, it展开更多
Zirconium oxide （Zr02） thin films are deposited at room temperature by cathodic arc at substrate biases of 0 V, -60 V and -120 V, respectively. The crystal structure, composition, morphology, and deposition rate of ...Zirconium oxide （Zr02） thin films are deposited at room temperature by cathodic arc at substrate biases of 0 V, -60 V and -120 V, respectively. The crystal structure, composition, morphology, and deposition rate of the as-deposited thin films are systematically investigated by x-ray diffraction, x-ray photoelectron spectroscopy （XPS） as well as scanning electron microscopy. The results show that the crystal structure, morphology and deposition rate of the films all are dependant on substrate bias. With the increase of bias voltage from 0 V to -120 V, the zirconium oxide thin film grown on silicon wafer first exhibits monoclinic lattice and tetragonal lattice, further evolves monoclinic phase with the preferred orientation along the （-111） and （-222） directions at -60 V and finally along nearly one observed preferred （002） direction under -120 V. In addition, the variations of morphology with bias voltage are correlated to changes of the film structure. The results of XPS demonstrate that Zr elements are almost oxidized completely in the films achieved under -120 V bias.展开更多
Tantalum nitride （TAN） thin films are achieved on Si（111） and SS317L substrates by cathodic vacuum arc technique, which is rarely reported in the literature. The crystal structure, composition and surface morpholo...Tantalum nitride （TAN） thin films are achieved on Si（111） and SS317L substrates by cathodic vacuum arc technique, which is rarely reported in the literature. The crystal structure, composition and surface morphology of the films are characterized by x-ray diffraction （XRD）, x-ray photoelectron spectroscopy （XPS）, auger electron spectroscopy, and atomic force microscopy, respectively. The influence of substrate negative bias on crystal structure, composition, surface morphology of the TaN films is systematically studied. At the substrate bias of 0 V and -50 V, the amorphous TaN film is obtained. As the bias increases to -100 V, cubic TaN phase can be found. Stoichiometric TaN with hexagonal lattice preferred （300） orientation is prepared at a bias of -200 V. Combine the XRD and XPS results, the binding energy value of 23.6eV of Ta 4f（7/2） is contributed to hexagonal TaN. Compared to other techniques, TaN thin films fabricated by cathodic vacuum arc at various substrate biases show different microstructures.展开更多
基金supported by the Sichuan Youth Science and Technology Innovation Research Team (No. 2011JTD0006)Fundamental Research Funds for the Central Universities (Nos. ZYGX2012J039 and ZYGX2011Z002)
文摘The biaxially textured ion beam-assisted deposited(IBAD)-MgO templates were successfully prepared on polycrystalline Hastelloy metal substrate with reel-to-reel system for YB2Cu3O7-d(YBCO)-coated conductors.By the solution deposition planarization technique,amorphous Y2O3films were coated on untreated Hastelloy substrate as the bed layer to obtain smooth,dense,and crack-free surface for subsequent IBAD-MgO deposition.The 50 m long IBAD-MgO and homo-epitaxial(epi)-MgO buffer layers deposited on Y2O3films exhibit excellent crystallographic consistency along the scope with full width half maximum(FWHM)values of(110)DU and(200)Dx in the range of 5.5°–6.0°and3.0°–3.5°,respectively.To match the lattice constant of YBCO material,LaMnO3cap layer was fabricated on IBAD-MgO templates by radio frequency(rf)magnetron sputtering with the FWHM values of in-plane and out-ofplane of 6.8°and 3.7°,respectively,indicating excellent biaxial texture.
文摘This study investigated the effects of annealing and discharging on the characteristics of MgO thin films prepared by ion beam-assisted deposition as a protective layer of AC-PDP. By an annealing process at a temperature of 450 ℃ for more than three hours, the crystallinity of the deposited MgO films was improved, but the surface of the （200）-oriented MgO thin films in the vicinity of the discharge electrodes, especially on the inner sides of the electrodes, was subjected to crack formation to the compressive stress of The failure mechanism of the MgO films plus the additional （200）-oriented MgO films was due compressive stress induced by the differences in the coefficient of thermal expansion between the electrode and the dielectric layer. In the discharging process, all MgO films were eroded unevenly, and the serious erosion occurred near the edges of the discharge electrodes. ATM（atomic force microscopy） images show that the eroded surface of the （200）-oriented MgO thin film is smoother than that of the （111）-oriented fihn. Also, the （200）-oriented MgO thin film shows an improved ability to resist ion erosion compared to the （111）-oriented film.
基金Project supported by the National Natural Science Foundation of China and 853' Committee.
文摘β-C<sub>3</sub>N<sub>4</sub> compound is a new hard material predicted by Liu and Cohen with theoretical calculation and so far it has not been found out in nature. In was assumed that the β-C<sub>3</sub>N<sub>4</sub> compound would adopt the known crystal structure of β-Si<sub>3</sub>N<sub>4</sub>, which constructed a network of CN<sub>4</sub> tetrahedra linked at the corners by threefold coordinate N atoms. Thus, the atomic coordination of β-C<sub>3</sub>N<sub>4</sub> is sp<sup>3</sup> hybrids on the C atoms and sp<sup>2</sup> hybrids on the N atoms. Based on the theoretical analysis and modeling calculation, it
文摘Zirconium oxide （Zr02） thin films are deposited at room temperature by cathodic arc at substrate biases of 0 V, -60 V and -120 V, respectively. The crystal structure, composition, morphology, and deposition rate of the as-deposited thin films are systematically investigated by x-ray diffraction, x-ray photoelectron spectroscopy （XPS） as well as scanning electron microscopy. The results show that the crystal structure, morphology and deposition rate of the films all are dependant on substrate bias. With the increase of bias voltage from 0 V to -120 V, the zirconium oxide thin film grown on silicon wafer first exhibits monoclinic lattice and tetragonal lattice, further evolves monoclinic phase with the preferred orientation along the （-111） and （-222） directions at -60 V and finally along nearly one observed preferred （002） direction under -120 V. In addition, the variations of morphology with bias voltage are correlated to changes of the film structure. The results of XPS demonstrate that Zr elements are almost oxidized completely in the films achieved under -120 V bias.
文摘Tantalum nitride （TAN） thin films are achieved on Si（111） and SS317L substrates by cathodic vacuum arc technique, which is rarely reported in the literature. The crystal structure, composition and surface morphology of the films are characterized by x-ray diffraction （XRD）, x-ray photoelectron spectroscopy （XPS）, auger electron spectroscopy, and atomic force microscopy, respectively. The influence of substrate negative bias on crystal structure, composition, surface morphology of the TaN films is systematically studied. At the substrate bias of 0 V and -50 V, the amorphous TaN film is obtained. As the bias increases to -100 V, cubic TaN phase can be found. Stoichiometric TaN with hexagonal lattice preferred （300） orientation is prepared at a bias of -200 V. Combine the XRD and XPS results, the binding energy value of 23.6eV of Ta 4f（7/2） is contributed to hexagonal TaN. Compared to other techniques, TaN thin films fabricated by cathodic vacuum arc at various substrate biases show different microstructures.
