A new model of periodic structure is proposed and analyzed.This structure is composed of an inner fluid-conveying pipe with periodic material arrangement carrying periodic arrays of outer cantilever pipes.The generali...A new model of periodic structure is proposed and analyzed.This structure is composed of an inner fluid-conveying pipe with periodic material arrangement carrying periodic arrays of outer cantilever pipes.The generalized differential quadrature rule(GDQR)method combined with the Bloch theorem is used to calculate the vibration band gaps of the structure.Results are verified by the forced vibration responses obtained using the GDQR method.Results indicate that the first two band gaps of the fluid-conveying pipe with periodic material arrangement can get close to each other and move to low frequency regions by changing the length of cantilever pipes.For high fluid velocity values in which the first band gap starts from zero frequency,since the second band is very close to the first band,this periodic structure can be used for vibration reduction over a wide band gap starting from zero frequency.Based on these results,it can be concluded that instead of increasing the total size of the periodic structure,these periodic arrays of cantilever pipes can be implemented to create a wide ultra-low-frequency band gap.Finally,verification of the GDQR method shows that it can be used as a precise numerical method for vibration analysis of the structures such as fluid-conveying pipes and moving belts.展开更多
Systems hosting flat bands offer a powerful platform for exploring strong correlation physics.Theoretically,topological degeneracy arising in systems with non-trivial topological orders on periodic manifolds of non-ze...Systems hosting flat bands offer a powerful platform for exploring strong correlation physics.Theoretically,topological degeneracy arising in systems with non-trivial topological orders on periodic manifolds of non-zero genus can generate ideal flat bands.However,experimental realization of such geometrically engineered systems is very difficult.In this work,we demonstrate that flat planes with strategically patterned hole defects can engineer ideal flat bands.We construct two families of models:singular flat band systems where degeneracy is stabilized by non-contractible loop excitations tied to hole defects and perfectly nested van Hove systems where degeneracy arises from line excitations in momentum space.These models circumvent the need for exotic manifolds while retaining the essential features of topological flat bands.By directly linking defect engineering to degeneracy mechanisms,our results establish a scalable framework for experimentally accessible flat band design.展开更多
To analyze the band gap characteristics of phononic crystals,a two-dimensional phononic crystal plate model with an elastic foundation was first established.The plane wave expansion method was used to compute the disp...To analyze the band gap characteristics of phononic crystals,a two-dimensional phononic crystal plate model with an elastic foundation was first established.The plane wave expansion method was used to compute the dispersion curves of this phononic crystal model,and the results were compared with those from the finite element method to verify their accuracy.Subsequently,a parameter study explored the effects of the elastic foundation coeffi-cient and coverage ratio on the band gap.The results indicate that as the coverage ratio of the elastic foundation increases,the band gap significantly expands,reaching its maximum value at 100%coverage.Additionally,as the elastic foundation stiffness increases,the band gap gradually widens and converges toward fixed boundary conditions.The study also investigated the band gap of phononic crystal plates with defects,finding that the vibrational energy concentrates at the defect unit cell.Furthermore,the defect band frequency can be effectively modulated by adjusting the coefficient of the elastic foundation,providing a theoretical basis for achieving efficient energy conversion.展开更多
In Hyperspectral Imaging(HSI),the detrimental influence of noise and distortions on data quality is profound,which has severely affected the following-on analytics and decisionmaking such as land mapping.This study pr...In Hyperspectral Imaging(HSI),the detrimental influence of noise and distortions on data quality is profound,which has severely affected the following-on analytics and decisionmaking such as land mapping.This study presents an innovative framework for assessing HSI band quality and reconstructing the low-quality bands,based on the Prophet model.By introducing a comprehensive quality metric to start,the authors approach factors in both spatial and spectral characteristics across local and global scales.This metric effectively captures the intricate noise and distortions inherent in the HSI data.Subsequently,the authors employ the Prophet model to forecast information within the low-quality bands,leveraging insights from neighbouring high-quality bands.To validate the effectiveness of the authors’proposed model,extensive experiments on three publicly available uncorrected datasets are conducted.In a head-to-head comparison,the framework against six state-ofthe-art band reconstruction algorithms including three spectral methods,two spatialspectral methods and one deep learning method is benchmarked.The authors’experiments also delve into strategies for band selection based on quality metrics and the quality evaluation of the reconstructed bands.In addition,the authors assess the classification accuracy utilising these reconstructed bands.In various experiments,the results consistently affirm the efficacy of the authors’method in HSI quality assessment and band reconstruction.Notably,the authors’approach obviates the need for manually prefiltering of noisy bands.This comprehensive framework holds promise in addressing HSI data quality concerns whilst enhancing the overall utility of HSI.展开更多
In DSP-based SerDes application,it is essential for AFE to implement a pre-ADC equalization to provide a better sig-nal for ADC and DSP.To meet the various equalization requirements of different channel and transmitte...In DSP-based SerDes application,it is essential for AFE to implement a pre-ADC equalization to provide a better sig-nal for ADC and DSP.To meet the various equalization requirements of different channel and transmitter configurations,this paper presents a 112 Gbps DSP-Based PAM4 SerDes receiver with a wide band equalization tuning AFE.The AFE is realized by implementing source degeneration transconductance,feedforward high-pass branch and inductive feedback peaking TIA.The AFE offers a flexible equalization gain tuning of up to 17.5 dB at Nyquist frequency without affecting the DC gain.With the pro-posed AFE,the receiver demonstrates eye opening after digital FIR equalization and achieves 6×10^(-9) BER with a 29.6 dB inser-tion loss channel.展开更多
Bismuth oxyselenide(Bi_(2)O_(2)Se),a novel quasi-two-dimensional charge-carrying semiconductor,is recognized as one of the most promising emerging platforms for next-generation semiconductor devices.Recent advancement...Bismuth oxyselenide(Bi_(2)O_(2)Se),a novel quasi-two-dimensional charge-carrying semiconductor,is recognized as one of the most promising emerging platforms for next-generation semiconductor devices.Recent advancements in the development of diverse Bi_(2)O_(2)Se heterojunctions have unveiled extensive potential applications in both electronics and optoelectronics.However,achieving an in-depth understanding of band alignment and particularly interface dynamics remains a significant challenge.In this study,we conduct a comprehensive experimental investigation into band alignment utilizing high-resolution X-ray photoelectron spectroscopy(HRXPS),while also thoroughly discussing the properties of interface states.Our findings reveal that ultrathin films of Bi_(2)O_(2)Se grown on SrTiO_(3)(with TiO_(2)(001)termination)exhibit Type-I(straddling gap)band alignment characterized by a valence band offset(VBO)of approximately 1.77±0.04 eV and a conduction band offset(CBO)around 0.68±0.04 eV.Notably,when accounting for the influence of interface states,the bands at the interface display a herringbone configuration due to substantial built-in electric fields,which markedly deviate from conventional band alignments.Thus,our results provide valuable insights for advancing high-efficiency electronic and optoelectronic devices,particularly those where charge transfer is highly sensitive to interface states.展开更多
The fast growth of mobile autonomous machines from traditional equipment to unmanned autonomous vehicles has fueled the demand for accurate and reliable localization solutions in diverse application domains.Ultra Wide...The fast growth of mobile autonomous machines from traditional equipment to unmanned autonomous vehicles has fueled the demand for accurate and reliable localization solutions in diverse application domains.Ultra Wide Band(UWB)technology has emerged as a promising candidate for addressing this need,offering high precision,immunity to multipath interference,and robust performance in challenging environments.In this comprehensive survey,we systematically explore UWB-based localization for mobile autonomous machines,spanning from fundamental principles to future trends.To the best of our knowledge,this review paper stands as the pioneer in systematically dissecting the algorithms of UWB-based localization for mobile autonomous machines,covering a spectrum from bottom-ranging schemes to advanced sensor fusion,error mitigation,and optimization techniques.By synthesizing existing knowledge,evaluating current methodologies,and highlighting future trends,this review aims to catalyze progress and innovation in the field,unlocking new opportunities for mobile autonomous machine applications across diverse industries and domains.Thus,it serves as a valuable resource for researchers,practitioners,and stakeholders interested in advancing the state-of-the-art UWB-based localization for mobile autonomous machines.展开更多
Refractory high-entropy alloys(RHEAs)exhibit outstanding strength at room temperature,but their high-temperature applications are hindered by severe strain-softening.Here,we report slip-band-driven dy-namic recrystall...Refractory high-entropy alloys(RHEAs)exhibit outstanding strength at room temperature,but their high-temperature applications are hindered by severe strain-softening.Here,we report slip-band-driven dy-namic recrystallization to enhance the high-temperature strain hardening of HfNbTaTiZr RHEA.By intro-ducing partial lattice defects through hot forging,we increase the nucleation sites for dynamic recrys-tallization during subsequent thermomechanical deformation,thus suppressing the strain-softening be-havior.We reveal that the high-temperature deformation is governed by the formation of heterogeneous bimodal grains along slip bands,which effectively constrain dislocation motion and improve strength,while microbands prevent premature failure.The fracture mode also changes from ductile to mixed to cleavage-dominated with increasing temperature.Our results demonstrate a simple and effective method for overcoming high-temperature strain-softening for BCC high entropy alloys.展开更多
Understanding the structure-property relationship and the mechanisms by which catalysts promote polysulfide conversion is crucial for the rational design of room-temperature sodium-sulfur(RT Na-S)battery catalysts.Her...Understanding the structure-property relationship and the mechanisms by which catalysts promote polysulfide conversion is crucial for the rational design of room-temperature sodium-sulfur(RT Na-S)battery catalysts.Herein,we systematically investigate Fe-,Co-,and Ni-incorporated Mo_(2)C as catalysts for RT Na-S battery to elucidate the intrinsic correlation between the d band center of Mo in Mo_(2)C and its catalytic activity.Combining experimental and theoretical analysis revealed that Ni-substituted Mo_(2)C elevates the d band center while significantly reducing antibonding orbitals(π^(*))occupancy compared to Fe-substituted Mo_(2)C and Co-substituted Mo_(2)C counterparts.This electronic restruction enhances d-p hybridization at the Mo-S interface,which strengthens sodium polysulfides adsorption energy and enhances charge transfer,thereby steering sulfur redox pathways toward thermodynamically favorable configurations.Our findings elucidate the intricate interplay between the electronic structure and catalytic activity of Mo_(2)C,advancing a novel perspective for the rational design of RT Na-S battery catalysts through tailored modulation of antibonding orbital occupancy.展开更多
A significant challenge in developing block copolymer photonic crystals is constructing low-symmetric ordered phases,which are essential for achieving a complete photonic band gap.Here,we propose a promising strategy ...A significant challenge in developing block copolymer photonic crystals is constructing low-symmetric ordered phases,which are essential for achieving a complete photonic band gap.Here,we propose a promising strategy to create low-symmetric ordered morphologies by incorporating shape-anisotropic rod-like side chains into block copolymers.Using dissipative particle dynamics simulations,we demonstrate that block copolymers with longer rod-like side chains can self-assemble into a hexagonally packed columnar phase characterized by a low-symmetric rectangular cross-section.Photonic band structure calculations reveal that this low-symmetric columnar phase can exhibit a complete photonic band gap,with the gap size dependent on the aspect ratio of the rectangular cross-sections of the columns.Our findings suggest an effective approach to constructing low-symmetric photonic crystals through the self-assembly of block copolymers with shape-anisotropic segments.展开更多
Two-dimensional double-layer honeycomb(DLHC)materials are known for their diverse physical properties,but superconductivity has been a notably absent characteristic in this structure.We address this gap by investigati...Two-dimensional double-layer honeycomb(DLHC)materials are known for their diverse physical properties,but superconductivity has been a notably absent characteristic in this structure.We address this gap by investigating M_(2)N_(2)(M=Nb,Ta)with DLHC structure using first-principles calculations.Our results show that M_(2)N_(2)are stable and metallic,exhibiting superconducting behavior.Specifically,Nb_(2)N_(2)and Ta_(2)N_(2)display superconducting transition temperatures of 6.8 K and 8.8 K,respectively.Their electron-phonon coupling is predominantly driven by the coupling between metal d-orbitals and low-frequency metal-dominated vibration modes.Interestingly,two compounds also exhibit non-trivial band topology.Thus,M_(2)N_(2)are promising platforms for studying the interplay between topology and superconductivity and fill the gap in superconductivity research for DLHC materials.展开更多
Sb_(2)Se_(3)solar cells have achieved a power conversion efficiency(PCE)of over 10%.However,the serious open-circuit voltage deficit(VOC-deificit),induced by the hard-to-control crystal orientation and heterojunction ...Sb_(2)Se_(3)solar cells have achieved a power conversion efficiency(PCE)of over 10%.However,the serious open-circuit voltage deficit(VOC-deificit),induced by the hard-to-control crystal orientation and heterojunction interface reaction,limits the PCE of vapor transport deposition(VTD)processed Sb_(2)Se_(3)solar cells.To overcome the VOC-deficit problem of VTD processed Sb_(2)Se_(3)solar cells,herein,an in-situ bandgap regulation strategy is innovatively proposed to prepare a wide band gap Sb2(S,Se)3seed layer(WBSL)at CdS/Sb_(2)Se_(3)heterojunction interface to improve the PCE of Sb_(2)Se_(3)solar cells.The analysis results show that the introduced Sb2(S,Se)3seed layer can enhance the[001]orientation of Sb_(2)Se_(3)thin films,broaden the band gap of heterojunction interface,and realize a"Spike-like"conduction band alignment with ΔE_(c)=0.11 eV.In addition,thanks to the suppressed CdS/Sb_(2)Se_(3)interface reaction after WBSL application,the depletion region width of Sb_(2)Se_(3)solar cells is widened,and the quality of CdS/Sb_(2)Se_(3)interface and the carrier transporting performance of Sb_(2)Se_(3)solar cells are significantly improved as well.Moreover,the harmful Se vacancy defects near the front interface of Sb_(2)Se_(3)solar cells can be greatly diminished by WBSL.Finally,the PCE of Sb_(2)Se_(3)solar cells is improved from 7.0%to 7.6%;meanwhile the VOCis increased to 466 mV which is the highest value for the VTD derived Sb_(2)Se_(3)solar cells.This work will provide a valuable reference for the interface and orientation regulation of antimony-based chalcogenide solar cells.展开更多
Lead-free halide double perovskites have recently attracted significant attention due to their exceptional stability and favorable band gaps,making them promising candidates for solar cell applications.However,the rel...Lead-free halide double perovskites have recently attracted significant attention due to their exceptional stability and favorable band gaps,making them promising candidates for solar cell applications.However,the relationship between their structural characteristics and intrinsic band gap remains under-explored.This study presents a method to investigate the structure-band gap correlation in a typical halide double perovskite,MA_(2)Pt_(6)(MA^(+)=CH_(3)NH_(3)^(+)),using high pressure techniques.The band gap of MA_(2)PtI_(6)is effectively reduced at two different rates of 0.063 eV/GPa and 0.079 eV/GPa before and after 1.2 GPa,and progressively closes as pressure further increases.These optical changes are closely related to the pressure induced structural evolution of MA_(2)PtI_(6).Moreover,a phase transition from trigonal(R-3m)to monoclinic(P2/m)occurs at 1.2 GPa and completes by 2.0 GPa,driven by pressure-induced distortion of the[PtI_(6)]^(2-)octahedra,which is responsible for the variation of the band gap.These promising findings pave the way for potential applications in the structural and band gap tuning of halide double perovskites.展开更多
In recent years, transition metal phosphorus trichalcogenides MPX_(3)(M = transition metal, X = S, Se) have garnered significant attention in the field of two-dimensional van der Waals materials on account of their un...In recent years, transition metal phosphorus trichalcogenides MPX_(3)(M = transition metal, X = S, Se) have garnered significant attention in the field of two-dimensional van der Waals materials on account of their unique layered structures and diverse physical properties. In this work, we systematically investigated the vibrational modes and band gap evolution of ZnPSe_(3) under extreme conditions using Raman spectroscopy and high-pressure ultraviolet–visible(UV-vis) absorption spectroscopy. The experimental results demonstrate that the vibrational modes of ZnPSe_(3) remain stable at low temperatures(5–300 K) and high pressures(0–22.1 GPa). Notably, the band gap of ZnPSe_(3) exhibits an initial increase followed by a decrease under pressures ranging from 0 to 20.6 GPa, which is likely associated with a pressure-induced transition from an indirect to a direct band gap. This work not only enriches the understanding of van der Waals materials but also provides crucial experimental insights for their application in band gap engineering.展开更多
Cu_(2)ZnSn(S,Se)_(4)(CZTSSe)is considered to be the most potential light-absorbing material to replace CuInGaSe_(2)(CIGS),but the actual photoelectric conversion efficiency of such cells is much lower than that of CIG...Cu_(2)ZnSn(S,Se)_(4)(CZTSSe)is considered to be the most potential light-absorbing material to replace CuInGaSe_(2)(CIGS),but the actual photoelectric conversion efficiency of such cells is much lower than that of CIGS.One of the reasons is the high recombination rate of carriers at the interface.In this paper,in order to reduce the carrier recombination,a new solar cell structure with double absorber layers of Al-doped ZnO(AZO)/intrinsic(i)-ZnO/CdS/CZTS_(x1)Se_(1−x1)(CZTSSe_(1))/CZTS_(x2)Se_(1−x2)(CZTSSe_(2))/Mo was proposed,and the optimal conduction band offsets(CBOs)of CdS/CZTSSe_(1) interface and CZTSSe_(1)/CZTSSe_(2) interface were determined by changing the S ratio in CZTSSe_(1) and CZTSSe_(2),and the effect of thickness of CZTSSe_(1) on the performance of the cell was studied.The efficiencies of the optimized single and double absorber layers reached 17.97%and 23.4%,respectively.Compared with the single absorber layer structure,the proposed structure with double absorber layers has better cell performance.展开更多
Flat electronic bands in condensed matter provide a rich avenue for exploring novel quantum phenomena. Here, we report an optical spectroscopy study of a topological hourglass semimetal Nb_(3)SiTe_(6) with the electri...Flat electronic bands in condensed matter provide a rich avenue for exploring novel quantum phenomena. Here, we report an optical spectroscopy study of a topological hourglass semimetal Nb_(3)SiTe_(6) with the electric field of the incident light parallel to its crystalline ab-plane. The ab-plane optical conductivity spectra of Nb_(3)SiTe_(6) single crystals exhibit a remarkable peak-like feature around 1.20 eV, which is mainly contributed by the direct optical transitions between the two ab-initio-calculation-derived flat bands along the momentum direction Z–U. Our results pave the way for investigating exotic quantum phenomena based on the flat bands in topological hourglass semimetals.展开更多
In order to investigate the effect of different doping types on the band alignment of heterojunctions,we prepared PtSe_(2)/n-GaN,PtSe_(2)/p-GaN,and PtSe_(2)/u-GaN heterojunctions by wet transfer technique.The valence ...In order to investigate the effect of different doping types on the band alignment of heterojunctions,we prepared PtSe_(2)/n-GaN,PtSe_(2)/p-GaN,and PtSe_(2)/u-GaN heterojunctions by wet transfer technique.The valence band offsets(VBO)of the three heterojunctions were measured by x-ray photoelectron spectroscopy(XPS),while the PtSe_(2)/n-GaN is 3.70±0.15 eV,PtSe_(2)/p-GaN is 0.264±0.15 eV,and PtSe_(2)/u-GaN is 3.02±0.15 eV.The conduction band offset(CBO)of the three heterojunctions was calculated from the material bandgap and VBO,while the PtSe_(2)/n-GaN is 0.61±0.15 eV,PtSe_(2)/p-GaN is 2.83±0.15 eV,and PtSe_(2)/u-GaN is 0.07±0.15 eV.This signifies that both PtSe_(2)/u-GaN and PtSe_(2)/p-GaN exhibit type-Ⅰband alignment,but the PtSe_(2)/n-GaN heterojunction has type-Ⅲband alignment.This signifies that the band engineering of PtSe_(2)/GaN heterojunction can be achieved by manipulating the concentration and type of doping,which is significantly relevant for the advancement of related devices through the realization of band alignment and the modulation of the material properties of the PtSe_(2)/GaN heterojunction.展开更多
Typical p-n junctions have emerged as a promising strategy for contending with charge carrier recombination in solar conversion.However,the photo-corrosion and unsuitable energy band positions still hinder their pract...Typical p-n junctions have emerged as a promising strategy for contending with charge carrier recombination in solar conversion.However,the photo-corrosion and unsuitable energy band positions still hinder their practical application for hydrogen production from water in photoelectrochemical systems.Here,an in-situ photo-oxidation method is proposed for achieving self-adapting activation of BiVO_(4)-based photoanodes with surface-encapsulated CuGaS_(2)particles by the ZnO layer.The self-adapting activation demotes the energy band positions of CuGaS_(2),establishing an S-scheme structure with BiVO_(4),resulting in an efficient p-n junction photoanode.The optimal sample exhibits enhanced photocurrent and an onset potential cathodically shifted by~300 mV compared with BiVO_(4),which is attributed to significantly enhanced charge transport and transfer efficiencies.As expected,it attains the highest photocurrent value of 5.87 mA·cm^(-2),aided by a hole scavenger at 1.23 V versus a reversible hydrogen electrode,which significantly surpasses that of BiVO_(4)(4.32 mA·cm^(-2)).展开更多
BACKGROUND The generation of intrabony defects due to the iatrogenic use of elastic bands is an undesirable situation that can result in persistent gingival inflammation with subsequent bone degradation,thus ultimatel...BACKGROUND The generation of intrabony defects due to the iatrogenic use of elastic bands is an undesirable situation that can result in persistent gingival inflammation with subsequent bone degradation,thus ultimately leading to tooth loss.CASE SUMMARY This clinical case involved a 27-year-old male patient who complained of persistent inflammation and bleeding in the upper anterior region of the gums,despite having undergone dental cleaning for at least 4 years.The dental and medical history indicated the use of removable orthodontic appliances for 8 years,after which braces were placed for 2 years.The intraoral evaluation revealed inflammation and localized suppuration in teeth 11 and 12.Measurements of 2-7 mm for probing depth and 1-5 mm for clinical attachment loss were detected,and combined bone loss was observed via radiographs.Based on the clinical and radiographic findings,localized stage III,grade C periodontitis was diagnosed.During subgingival debridement,two elastic bands emerged around the involved teeth.The bone defects persisted;therefore,they were surgically addressed using a papilla preservation flap and guided tissue regeneration(GTR).CONCLUSION The use of elastic bands of various sizes and elasticities is often essential in multiple orthodontic treatments.However,it is crucial to perform a thorough check-up for each patient during treatment and at the end of treatment to remove any remaining residue of resin,metal bands,or orthodontic bands.Additionally,it is imperative to inform the patients of the importance of attending their follow-up appointments.The use of elastic bands in orthodontics requires special care;moreover,GTR is a management option for intrabony defects associated with the iatrogenic use of bands.展开更多
Designing novel van der Waals layered materials with low thermal conductivity and large power factor is important for the development of layered thermoelectric materials.Therefore,the novel van der Waals intercalated ...Designing novel van der Waals layered materials with low thermal conductivity and large power factor is important for the development of layered thermoelectric materials.Therefore,the novel van der Waals intercalated compound La_(2)Bi_(4)Cu_(2)O_(6)Se_(4),which is constructed by alternately stacking LaCuSeO and Bi_(2)O_(2)Se units along the c-axis in a 1:2 ratio,has designed for thermoelectric materials.The unique intercalated strategy leads to the four-band convergence at the valence band maximum,and the combination of multiple heavy band and light band,which significantly enhances the p-type doping power factor.The lattice thermal conductivities in La_(2)Bi_(4)Cu_(2)O_(6)Se_(4)and LaCuSeO compounds are accurately calculated by considering the coherence contributions of the anharmonic phonon reformulations and the off-diagonal term of the heat flux operator.The weak bond property of the Cu d-Se p bonding causes phonon softening,reducing the lattice thermal conductivity.The intercalated Bi atom has stereochemically active lone-pair electrons,which causes acoustic-optical coupling and produces strong fourth acoustic-optical phonon scattering,suppressing low-frequency phonon transport.The carrier relaxation time is rationalized by considering multiple carrier scattering mechanisms.The p-type doping La_(2)Bi_(4)Cu_(2)O_(6)Se_(4)achieves an average ZT of 2.3 at 700 K,and an optimal ZT of 2.7 along the in-plane direction.Our current work not only reveals the origin of the strong phonon scattering and large power factor of La_(2)Bi_(4)Cu_(2)O_(6)Se_(4)compound,but also provides theoretical guidance for the design of La-based layered oxides for thermoelectric applications.展开更多
文摘A new model of periodic structure is proposed and analyzed.This structure is composed of an inner fluid-conveying pipe with periodic material arrangement carrying periodic arrays of outer cantilever pipes.The generalized differential quadrature rule(GDQR)method combined with the Bloch theorem is used to calculate the vibration band gaps of the structure.Results are verified by the forced vibration responses obtained using the GDQR method.Results indicate that the first two band gaps of the fluid-conveying pipe with periodic material arrangement can get close to each other and move to low frequency regions by changing the length of cantilever pipes.For high fluid velocity values in which the first band gap starts from zero frequency,since the second band is very close to the first band,this periodic structure can be used for vibration reduction over a wide band gap starting from zero frequency.Based on these results,it can be concluded that instead of increasing the total size of the periodic structure,these periodic arrays of cantilever pipes can be implemented to create a wide ultra-low-frequency band gap.Finally,verification of the GDQR method shows that it can be used as a precise numerical method for vibration analysis of the structures such as fluid-conveying pipes and moving belts.
基金supported by the Ministry of Science and Technology(Grant No.2022YFA1403901)the National Natural Science Foundation of China(Grant Nos.12494594,11888101,12174428,and 12504192)+2 种基金the Strategic Priority Research Program of the Chinese Academy of Sciences(Grant No.XDB28000000)the New Cornerstone Investigator Program,the Chinese Academy of Sciences through the Youth Innovation Promotion Association(Grant No.2022YSBR-048)the Shanghai Science and Technology Innovation Action Plan(Grant No.24LZ1400800).
文摘Systems hosting flat bands offer a powerful platform for exploring strong correlation physics.Theoretically,topological degeneracy arising in systems with non-trivial topological orders on periodic manifolds of non-zero genus can generate ideal flat bands.However,experimental realization of such geometrically engineered systems is very difficult.In this work,we demonstrate that flat planes with strategically patterned hole defects can engineer ideal flat bands.We construct two families of models:singular flat band systems where degeneracy is stabilized by non-contractible loop excitations tied to hole defects and perfectly nested van Hove systems where degeneracy arises from line excitations in momentum space.These models circumvent the need for exotic manifolds while retaining the essential features of topological flat bands.By directly linking defect engineering to degeneracy mechanisms,our results establish a scalable framework for experimentally accessible flat band design.
基金The National Natural Science Foundation of China(No.12002086)。
文摘To analyze the band gap characteristics of phononic crystals,a two-dimensional phononic crystal plate model with an elastic foundation was first established.The plane wave expansion method was used to compute the dispersion curves of this phononic crystal model,and the results were compared with those from the finite element method to verify their accuracy.Subsequently,a parameter study explored the effects of the elastic foundation coeffi-cient and coverage ratio on the band gap.The results indicate that as the coverage ratio of the elastic foundation increases,the band gap significantly expands,reaching its maximum value at 100%coverage.Additionally,as the elastic foundation stiffness increases,the band gap gradually widens and converges toward fixed boundary conditions.The study also investigated the band gap of phononic crystal plates with defects,finding that the vibrational energy concentrates at the defect unit cell.Furthermore,the defect band frequency can be effectively modulated by adjusting the coefficient of the elastic foundation,providing a theoretical basis for achieving efficient energy conversion.
基金National Natural Science Foundation Major Project of China,Grant/Award Number:42192580Guangdong Province Key Construction Discipline Scientific Research Ability Promotion Project,Grant/Award Number:2022ZDJS015。
文摘In Hyperspectral Imaging(HSI),the detrimental influence of noise and distortions on data quality is profound,which has severely affected the following-on analytics and decisionmaking such as land mapping.This study presents an innovative framework for assessing HSI band quality and reconstructing the low-quality bands,based on the Prophet model.By introducing a comprehensive quality metric to start,the authors approach factors in both spatial and spectral characteristics across local and global scales.This metric effectively captures the intricate noise and distortions inherent in the HSI data.Subsequently,the authors employ the Prophet model to forecast information within the low-quality bands,leveraging insights from neighbouring high-quality bands.To validate the effectiveness of the authors’proposed model,extensive experiments on three publicly available uncorrected datasets are conducted.In a head-to-head comparison,the framework against six state-ofthe-art band reconstruction algorithms including three spectral methods,two spatialspectral methods and one deep learning method is benchmarked.The authors’experiments also delve into strategies for band selection based on quality metrics and the quality evaluation of the reconstructed bands.In addition,the authors assess the classification accuracy utilising these reconstructed bands.In various experiments,the results consistently affirm the efficacy of the authors’method in HSI quality assessment and band reconstruction.Notably,the authors’approach obviates the need for manually prefiltering of noisy bands.This comprehensive framework holds promise in addressing HSI data quality concerns whilst enhancing the overall utility of HSI.
基金supported by National Key R&D Program of China No.2022YFB2803401.
文摘In DSP-based SerDes application,it is essential for AFE to implement a pre-ADC equalization to provide a better sig-nal for ADC and DSP.To meet the various equalization requirements of different channel and transmitter configurations,this paper presents a 112 Gbps DSP-Based PAM4 SerDes receiver with a wide band equalization tuning AFE.The AFE is realized by implementing source degeneration transconductance,feedforward high-pass branch and inductive feedback peaking TIA.The AFE offers a flexible equalization gain tuning of up to 17.5 dB at Nyquist frequency without affecting the DC gain.With the pro-posed AFE,the receiver demonstrates eye opening after digital FIR equalization and achieves 6×10^(-9) BER with a 29.6 dB inser-tion loss channel.
基金supported by the National Natural Science Foundation of China(Nos.52072059,12304078,12274061 and 11774044)the Natural Science Foundation of Sichuan Province(No.2024NSFSC1384).
文摘Bismuth oxyselenide(Bi_(2)O_(2)Se),a novel quasi-two-dimensional charge-carrying semiconductor,is recognized as one of the most promising emerging platforms for next-generation semiconductor devices.Recent advancements in the development of diverse Bi_(2)O_(2)Se heterojunctions have unveiled extensive potential applications in both electronics and optoelectronics.However,achieving an in-depth understanding of band alignment and particularly interface dynamics remains a significant challenge.In this study,we conduct a comprehensive experimental investigation into band alignment utilizing high-resolution X-ray photoelectron spectroscopy(HRXPS),while also thoroughly discussing the properties of interface states.Our findings reveal that ultrathin films of Bi_(2)O_(2)Se grown on SrTiO_(3)(with TiO_(2)(001)termination)exhibit Type-I(straddling gap)band alignment characterized by a valence band offset(VBO)of approximately 1.77±0.04 eV and a conduction band offset(CBO)around 0.68±0.04 eV.Notably,when accounting for the influence of interface states,the bands at the interface display a herringbone configuration due to substantial built-in electric fields,which markedly deviate from conventional band alignments.Thus,our results provide valuable insights for advancing high-efficiency electronic and optoelectronic devices,particularly those where charge transfer is highly sensitive to interface states.
文摘The fast growth of mobile autonomous machines from traditional equipment to unmanned autonomous vehicles has fueled the demand for accurate and reliable localization solutions in diverse application domains.Ultra Wide Band(UWB)technology has emerged as a promising candidate for addressing this need,offering high precision,immunity to multipath interference,and robust performance in challenging environments.In this comprehensive survey,we systematically explore UWB-based localization for mobile autonomous machines,spanning from fundamental principles to future trends.To the best of our knowledge,this review paper stands as the pioneer in systematically dissecting the algorithms of UWB-based localization for mobile autonomous machines,covering a spectrum from bottom-ranging schemes to advanced sensor fusion,error mitigation,and optimization techniques.By synthesizing existing knowledge,evaluating current methodologies,and highlighting future trends,this review aims to catalyze progress and innovation in the field,unlocking new opportunities for mobile autonomous machine applications across diverse industries and domains.Thus,it serves as a valuable resource for researchers,practitioners,and stakeholders interested in advancing the state-of-the-art UWB-based localization for mobile autonomous machines.
基金supported by the Aviation Foundation(No.2023Z0530S6004)Program 173(No.2020-JCIQ-ZD-186-01)+4 种基金the Space Utilization System of China Manned Space Engineering(No.KJZ-YY-NCL08)the Shanghai“Super Postdoc”Incentive Program(No.2023314)the National High-end Foreign Experts Introduction Program(No.G2023014006)the Zhenjiang International Science and Technology Cooperation Program(No.GJ2023011)the Jiangsu University(High-tech ship)Collaborative Innovation Center Program(No.XTCX202401).
文摘Refractory high-entropy alloys(RHEAs)exhibit outstanding strength at room temperature,but their high-temperature applications are hindered by severe strain-softening.Here,we report slip-band-driven dy-namic recrystallization to enhance the high-temperature strain hardening of HfNbTaTiZr RHEA.By intro-ducing partial lattice defects through hot forging,we increase the nucleation sites for dynamic recrys-tallization during subsequent thermomechanical deformation,thus suppressing the strain-softening be-havior.We reveal that the high-temperature deformation is governed by the formation of heterogeneous bimodal grains along slip bands,which effectively constrain dislocation motion and improve strength,while microbands prevent premature failure.The fracture mode also changes from ductile to mixed to cleavage-dominated with increasing temperature.Our results demonstrate a simple and effective method for overcoming high-temperature strain-softening for BCC high entropy alloys.
基金supported by the National Natural Science Foundation of China(No.52372224 and 52072299)the Major Project of Shaanxi Coal Joint Fund of Shaanxi.Provincial Science and Technology Department(No.2019JLZ-07)。
文摘Understanding the structure-property relationship and the mechanisms by which catalysts promote polysulfide conversion is crucial for the rational design of room-temperature sodium-sulfur(RT Na-S)battery catalysts.Herein,we systematically investigate Fe-,Co-,and Ni-incorporated Mo_(2)C as catalysts for RT Na-S battery to elucidate the intrinsic correlation between the d band center of Mo in Mo_(2)C and its catalytic activity.Combining experimental and theoretical analysis revealed that Ni-substituted Mo_(2)C elevates the d band center while significantly reducing antibonding orbitals(π^(*))occupancy compared to Fe-substituted Mo_(2)C and Co-substituted Mo_(2)C counterparts.This electronic restruction enhances d-p hybridization at the Mo-S interface,which strengthens sodium polysulfides adsorption energy and enhances charge transfer,thereby steering sulfur redox pathways toward thermodynamically favorable configurations.Our findings elucidate the intricate interplay between the electronic structure and catalytic activity of Mo_(2)C,advancing a novel perspective for the rational design of RT Na-S battery catalysts through tailored modulation of antibonding orbital occupancy.
基金financially supported by the National Key R&D Program of China(No.2022YFB3707300)the National Natural Science Foundation of China(Nos.22133002,22373089)the support from the Excellent Youth Foundation of Henan Scientific Committee(No.242300421032).
文摘A significant challenge in developing block copolymer photonic crystals is constructing low-symmetric ordered phases,which are essential for achieving a complete photonic band gap.Here,we propose a promising strategy to create low-symmetric ordered morphologies by incorporating shape-anisotropic rod-like side chains into block copolymers.Using dissipative particle dynamics simulations,we demonstrate that block copolymers with longer rod-like side chains can self-assemble into a hexagonally packed columnar phase characterized by a low-symmetric rectangular cross-section.Photonic band structure calculations reveal that this low-symmetric columnar phase can exhibit a complete photonic band gap,with the gap size dependent on the aspect ratio of the rectangular cross-sections of the columns.Our findings suggest an effective approach to constructing low-symmetric photonic crystals through the self-assembly of block copolymers with shape-anisotropic segments.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.12074213 and 11574108)the National Key R&D Program of China(Grant No.2022YFA1403103)+2 种基金the Major Basic Program of Natural Science Foundation of Shandong Province(Grant No.ZR2021ZD01)the Natural Science Foundation of Shandong Province(Grant No.ZR2023MA082)the Project of Introduction and Cultivation for Young Innovative Talents in Colleges and Universities of Shandong Province。
文摘Two-dimensional double-layer honeycomb(DLHC)materials are known for their diverse physical properties,but superconductivity has been a notably absent characteristic in this structure.We address this gap by investigating M_(2)N_(2)(M=Nb,Ta)with DLHC structure using first-principles calculations.Our results show that M_(2)N_(2)are stable and metallic,exhibiting superconducting behavior.Specifically,Nb_(2)N_(2)and Ta_(2)N_(2)display superconducting transition temperatures of 6.8 K and 8.8 K,respectively.Their electron-phonon coupling is predominantly driven by the coupling between metal d-orbitals and low-frequency metal-dominated vibration modes.Interestingly,two compounds also exhibit non-trivial band topology.Thus,M_(2)N_(2)are promising platforms for studying the interplay between topology and superconductivity and fill the gap in superconductivity research for DLHC materials.
基金supported by the National Natural Science Foundation of China(62305064)the Research Start-up Fund for Young Teachers of Fuzhou University(602592)+1 种基金the Young and Middleaged Teacher Education Research Project of Fujian Province(JAT220011)the Fujian Science&Technology Innovation Laboratory Optoelectronic Information of China(Grant No.2021ZZ124).
文摘Sb_(2)Se_(3)solar cells have achieved a power conversion efficiency(PCE)of over 10%.However,the serious open-circuit voltage deficit(VOC-deificit),induced by the hard-to-control crystal orientation and heterojunction interface reaction,limits the PCE of vapor transport deposition(VTD)processed Sb_(2)Se_(3)solar cells.To overcome the VOC-deficit problem of VTD processed Sb_(2)Se_(3)solar cells,herein,an in-situ bandgap regulation strategy is innovatively proposed to prepare a wide band gap Sb2(S,Se)3seed layer(WBSL)at CdS/Sb_(2)Se_(3)heterojunction interface to improve the PCE of Sb_(2)Se_(3)solar cells.The analysis results show that the introduced Sb2(S,Se)3seed layer can enhance the[001]orientation of Sb_(2)Se_(3)thin films,broaden the band gap of heterojunction interface,and realize a"Spike-like"conduction band alignment with ΔE_(c)=0.11 eV.In addition,thanks to the suppressed CdS/Sb_(2)Se_(3)interface reaction after WBSL application,the depletion region width of Sb_(2)Se_(3)solar cells is widened,and the quality of CdS/Sb_(2)Se_(3)interface and the carrier transporting performance of Sb_(2)Se_(3)solar cells are significantly improved as well.Moreover,the harmful Se vacancy defects near the front interface of Sb_(2)Se_(3)solar cells can be greatly diminished by WBSL.Finally,the PCE of Sb_(2)Se_(3)solar cells is improved from 7.0%to 7.6%;meanwhile the VOCis increased to 466 mV which is the highest value for the VTD derived Sb_(2)Se_(3)solar cells.This work will provide a valuable reference for the interface and orientation regulation of antimony-based chalcogenide solar cells.
基金supported by the National Natural Science Foundation of China(Grant No.12474414)the Natural Science Foundation of Henan(Grant No.242300421157)the ADXRD measurement was performed at the 4W2 beamline,the Beijing Synchrotron Radiation Facility(BSRF).
文摘Lead-free halide double perovskites have recently attracted significant attention due to their exceptional stability and favorable band gaps,making them promising candidates for solar cell applications.However,the relationship between their structural characteristics and intrinsic band gap remains under-explored.This study presents a method to investigate the structure-band gap correlation in a typical halide double perovskite,MA_(2)Pt_(6)(MA^(+)=CH_(3)NH_(3)^(+)),using high pressure techniques.The band gap of MA_(2)PtI_(6)is effectively reduced at two different rates of 0.063 eV/GPa and 0.079 eV/GPa before and after 1.2 GPa,and progressively closes as pressure further increases.These optical changes are closely related to the pressure induced structural evolution of MA_(2)PtI_(6).Moreover,a phase transition from trigonal(R-3m)to monoclinic(P2/m)occurs at 1.2 GPa and completes by 2.0 GPa,driven by pressure-induced distortion of the[PtI_(6)]^(2-)octahedra,which is responsible for the variation of the band gap.These promising findings pave the way for potential applications in the structural and band gap tuning of halide double perovskites.
基金Project supported by the National Key Research and Development Program of China (Grant Nos. 2021YFA1400204 and 2021YFA0718701)the National Natural Science Foundation of China (Grant Nos. 12204420, 12474021, and 12174347)。
文摘In recent years, transition metal phosphorus trichalcogenides MPX_(3)(M = transition metal, X = S, Se) have garnered significant attention in the field of two-dimensional van der Waals materials on account of their unique layered structures and diverse physical properties. In this work, we systematically investigated the vibrational modes and band gap evolution of ZnPSe_(3) under extreme conditions using Raman spectroscopy and high-pressure ultraviolet–visible(UV-vis) absorption spectroscopy. The experimental results demonstrate that the vibrational modes of ZnPSe_(3) remain stable at low temperatures(5–300 K) and high pressures(0–22.1 GPa). Notably, the band gap of ZnPSe_(3) exhibits an initial increase followed by a decrease under pressures ranging from 0 to 20.6 GPa, which is likely associated with a pressure-induced transition from an indirect to a direct band gap. This work not only enriches the understanding of van der Waals materials but also provides crucial experimental insights for their application in band gap engineering.
基金supported by the Science and Technology Innovation Development Program(No.70304901).
文摘Cu_(2)ZnSn(S,Se)_(4)(CZTSSe)is considered to be the most potential light-absorbing material to replace CuInGaSe_(2)(CIGS),but the actual photoelectric conversion efficiency of such cells is much lower than that of CIGS.One of the reasons is the high recombination rate of carriers at the interface.In this paper,in order to reduce the carrier recombination,a new solar cell structure with double absorber layers of Al-doped ZnO(AZO)/intrinsic(i)-ZnO/CdS/CZTS_(x1)Se_(1−x1)(CZTSSe_(1))/CZTS_(x2)Se_(1−x2)(CZTSSe_(2))/Mo was proposed,and the optimal conduction band offsets(CBOs)of CdS/CZTSSe_(1) interface and CZTSSe_(1)/CZTSSe_(2) interface were determined by changing the S ratio in CZTSSe_(1) and CZTSSe_(2),and the effect of thickness of CZTSSe_(1) on the performance of the cell was studied.The efficiencies of the optimized single and double absorber layers reached 17.97%and 23.4%,respectively.Compared with the single absorber layer structure,the proposed structure with double absorber layers has better cell performance.
基金Project supported by the Guangdong Basic and Applied Basic Research Foundation (Grant No. 2021B1515130007)the National Natural Science Foundation of China (Grant Nos. U21A20432 and 52273077)+1 种基金the National Key Research and Development Program of China (Grant No. 2022YFA1403800)the Strategic Priority Research Program of Chinese Academy of Sciences (Grant No. XDB33000000)。
文摘Flat electronic bands in condensed matter provide a rich avenue for exploring novel quantum phenomena. Here, we report an optical spectroscopy study of a topological hourglass semimetal Nb_(3)SiTe_(6) with the electric field of the incident light parallel to its crystalline ab-plane. The ab-plane optical conductivity spectra of Nb_(3)SiTe_(6) single crystals exhibit a remarkable peak-like feature around 1.20 eV, which is mainly contributed by the direct optical transitions between the two ab-initio-calculation-derived flat bands along the momentum direction Z–U. Our results pave the way for investigating exotic quantum phenomena based on the flat bands in topological hourglass semimetals.
基金Project supported by the National Natural Science Foundation of China(Grant No.61874108)the Fundamental Research Funds for the Central Universities(Grant No.lzujbky-2024-04)the Gansu Provincial Scientific and Technologic Planning Program(Grant No.22ZD6GE016).
文摘In order to investigate the effect of different doping types on the band alignment of heterojunctions,we prepared PtSe_(2)/n-GaN,PtSe_(2)/p-GaN,and PtSe_(2)/u-GaN heterojunctions by wet transfer technique.The valence band offsets(VBO)of the three heterojunctions were measured by x-ray photoelectron spectroscopy(XPS),while the PtSe_(2)/n-GaN is 3.70±0.15 eV,PtSe_(2)/p-GaN is 0.264±0.15 eV,and PtSe_(2)/u-GaN is 3.02±0.15 eV.The conduction band offset(CBO)of the three heterojunctions was calculated from the material bandgap and VBO,while the PtSe_(2)/n-GaN is 0.61±0.15 eV,PtSe_(2)/p-GaN is 2.83±0.15 eV,and PtSe_(2)/u-GaN is 0.07±0.15 eV.This signifies that both PtSe_(2)/u-GaN and PtSe_(2)/p-GaN exhibit type-Ⅰband alignment,but the PtSe_(2)/n-GaN heterojunction has type-Ⅲband alignment.This signifies that the band engineering of PtSe_(2)/GaN heterojunction can be achieved by manipulating the concentration and type of doping,which is significantly relevant for the advancement of related devices through the realization of band alignment and the modulation of the material properties of the PtSe_(2)/GaN heterojunction.
基金supported by the open fund from Key Lab of Eco-restoration of Regional Contaminated Environment(Shenyang University),Ministry of Education(No.KF-22-08)the National Natural Science Foundation of China(Nos.22003074 and 42177406)+1 种基金the Youth Innovation Promotion Association CAS,Guangdong Basic and Applied Basic Research Foundation(No.2023A1515011410)S.Liu gratefully acknowledges the financial support by the National Natural Science Foundation of China(No.52302223).
文摘Typical p-n junctions have emerged as a promising strategy for contending with charge carrier recombination in solar conversion.However,the photo-corrosion and unsuitable energy band positions still hinder their practical application for hydrogen production from water in photoelectrochemical systems.Here,an in-situ photo-oxidation method is proposed for achieving self-adapting activation of BiVO_(4)-based photoanodes with surface-encapsulated CuGaS_(2)particles by the ZnO layer.The self-adapting activation demotes the energy band positions of CuGaS_(2),establishing an S-scheme structure with BiVO_(4),resulting in an efficient p-n junction photoanode.The optimal sample exhibits enhanced photocurrent and an onset potential cathodically shifted by~300 mV compared with BiVO_(4),which is attributed to significantly enhanced charge transport and transfer efficiencies.As expected,it attains the highest photocurrent value of 5.87 mA·cm^(-2),aided by a hole scavenger at 1.23 V versus a reversible hydrogen electrode,which significantly surpasses that of BiVO_(4)(4.32 mA·cm^(-2)).
文摘BACKGROUND The generation of intrabony defects due to the iatrogenic use of elastic bands is an undesirable situation that can result in persistent gingival inflammation with subsequent bone degradation,thus ultimately leading to tooth loss.CASE SUMMARY This clinical case involved a 27-year-old male patient who complained of persistent inflammation and bleeding in the upper anterior region of the gums,despite having undergone dental cleaning for at least 4 years.The dental and medical history indicated the use of removable orthodontic appliances for 8 years,after which braces were placed for 2 years.The intraoral evaluation revealed inflammation and localized suppuration in teeth 11 and 12.Measurements of 2-7 mm for probing depth and 1-5 mm for clinical attachment loss were detected,and combined bone loss was observed via radiographs.Based on the clinical and radiographic findings,localized stage III,grade C periodontitis was diagnosed.During subgingival debridement,two elastic bands emerged around the involved teeth.The bone defects persisted;therefore,they were surgically addressed using a papilla preservation flap and guided tissue regeneration(GTR).CONCLUSION The use of elastic bands of various sizes and elasticities is often essential in multiple orthodontic treatments.However,it is crucial to perform a thorough check-up for each patient during treatment and at the end of treatment to remove any remaining residue of resin,metal bands,or orthodontic bands.Additionally,it is imperative to inform the patients of the importance of attending their follow-up appointments.The use of elastic bands in orthodontics requires special care;moreover,GTR is a management option for intrabony defects associated with the iatrogenic use of bands.
基金Financial supports from the National Natural Science Foundation of China(Grant No.21503039)Department of Science and Technology of Liaoning Province(Grant No.2019MS164)+1 种基金Department of Education of Liaoning Province(Grant No.LJ2020JCL034)Discipline Innovation Team of Liaoning Technical University(Grant No.LNTU20TD-16)are greatly acknowledged。
文摘Designing novel van der Waals layered materials with low thermal conductivity and large power factor is important for the development of layered thermoelectric materials.Therefore,the novel van der Waals intercalated compound La_(2)Bi_(4)Cu_(2)O_(6)Se_(4),which is constructed by alternately stacking LaCuSeO and Bi_(2)O_(2)Se units along the c-axis in a 1:2 ratio,has designed for thermoelectric materials.The unique intercalated strategy leads to the four-band convergence at the valence band maximum,and the combination of multiple heavy band and light band,which significantly enhances the p-type doping power factor.The lattice thermal conductivities in La_(2)Bi_(4)Cu_(2)O_(6)Se_(4)and LaCuSeO compounds are accurately calculated by considering the coherence contributions of the anharmonic phonon reformulations and the off-diagonal term of the heat flux operator.The weak bond property of the Cu d-Se p bonding causes phonon softening,reducing the lattice thermal conductivity.The intercalated Bi atom has stereochemically active lone-pair electrons,which causes acoustic-optical coupling and produces strong fourth acoustic-optical phonon scattering,suppressing low-frequency phonon transport.The carrier relaxation time is rationalized by considering multiple carrier scattering mechanisms.The p-type doping La_(2)Bi_(4)Cu_(2)O_(6)Se_(4)achieves an average ZT of 2.3 at 700 K,and an optimal ZT of 2.7 along the in-plane direction.Our current work not only reveals the origin of the strong phonon scattering and large power factor of La_(2)Bi_(4)Cu_(2)O_(6)Se_(4)compound,but also provides theoretical guidance for the design of La-based layered oxides for thermoelectric applications.
