This paper is a statistical survey of Southern Hemisphere cold and hot polar cap patches,in relation to the interplanetary magnetic field(IMF)and ionospheric convection geometry.A total of 11,946 patch events were ide...This paper is a statistical survey of Southern Hemisphere cold and hot polar cap patches,in relation to the interplanetary magnetic field(IMF)and ionospheric convection geometry.A total of 11,946 patch events were identified by Defense Meteorological Satellite Program(DMSP)F16 during the years 2011 to 2022.A temperature ratio of ion/electron temperature(T_(i)/T_(e))<0.68 is recommended to define a hot patch in the Southern Hemisphere,otherwise it is defined as a cold patch.The cold and hot patches have different dependencies on IMF clock angle,while their dependencies on IMF cone angle are similar.Both cold and hot patches appear most often on the duskside,and the distribution of cold patches gradually decreases from the dayside to the nightside,while hot patches have a higher occurrence rate near 14 and 21 magnetic local time(MLT).Moreover,we compared the key plasma characteristics of polar cap cold and hot patches in the Southern and Northern Hemispheres.The intensity of the duskside upward field-aligned current of patches in the Southern Hemisphere(SH)is stronger than that in the Northern Hemisphere(SH),which may be due to the discrepancy in conductivities between the two hemispheres,caused by the tilted dipole.In both hemispheres,the downward soft-electron energy flux of the dawnside patches is significantly greater than that of the duskside patches.展开更多
Infrared-transparent conductors have attracted considerable attention due to their potential applications in electromagnetic shielding,infrared sensors,and photovoltaic devices.However,most known materials face the cr...Infrared-transparent conductors have attracted considerable attention due to their potential applications in electromagnetic shielding,infrared sensors,and photovoltaic devices.However,most known materials face the critical challenge of balancing high infrared transmittance with high electrical conductivity across the broad infrared spectral band(2.5-25μm).While ultra-thin indium tin oxide(ITO)films have been demonstrated to exhibit superior infrared transmittance,their inherent low electrical conductivity necessitates additional enhancement strategies.This study systematically investigates the effects of oxygen vacancy concentration regulation and ultra-thin copper capping layer integration on the infrared optoelectronic properties of 20 nm-thick ITO films.A fundamental trade-off is revealed in ITO films that increased oxygen vacancy content enhances the electrical conductivity while compromising the infrared transmittance.Meanwhile,following the introduction of a Cu capping layer,the Cu/ITO system exhibits opposing dependencies of infrared transmittance and electrical conductivity on the capping layer thickness,with an optimum thickness of~3 nm.Finally,by constructing a Cu(3 nm)/ITO(20 nm)heterostructure with varying oxygen vacancy content,we demonstrate the combined effect of the ultra-thin Cu capping layer and moderate oxygen vacancy content on optimizing the carrier transport network.This configuration simultaneously minimizes surface/interfacial reflection and absorption losses,achieving high infrared transmittance(0.861)and a low sheet resistance of 400 W/sq.Our findings highlight the critical role of the combined effect of metal/oxide heterostructure design and defect engineering in optimizing infrared-transparent conductive properties.展开更多
In the structural reliability analysis,the first-order reliability method(FORM)often yields significant errors when addressing nonlinear problems.Although the second-order reliability method(SORM)can provide higher ac...In the structural reliability analysis,the first-order reliability method(FORM)often yields significant errors when addressing nonlinear problems.Although the second-order reliability method(SORM)can provide higher accuracy,the additional computation of the Hessian matrix leads to lower computational efficiency.Additionally,when the dimensionality of the random variables is high,the approximation formula of SORM can result in larger errors.To address these issues,a structural reliability analysis method based on Kriging and spherical cap area integral is proposed.Firstly,this method integrates FORM with the quasi-Newton algorithm Broyden-Fletcher-Goldfarb-Shanno(BFGS),trains the Kriging model by using sample points from the algorithm’s iteration process,and combines the Kriging model with gradient information to approximate the Hessian matrix.Then,the failure surface is approximated as a rotating paraboloid,utilizing the spherical cap to replace the complex surface.For the n-dimensional case,the hyperspherical cap area expression is combined with the integral method to calculate the failure probability.Finally,the method is validated through three examples,demonstrating improved computational accuracy and efficiency compared to traditional methods.展开更多
In this work,we design and fabricate AlGaN/GaN-based Schottky barrier diodes(SBDs)on a silicon substrate with a trenched n^(+)-GaN cap layer.With the developed physical models,we find that the n^(+)-GaN cap layer prov...In this work,we design and fabricate AlGaN/GaN-based Schottky barrier diodes(SBDs)on a silicon substrate with a trenched n^(+)-GaN cap layer.With the developed physical models,we find that the n^(+)-GaN cap layer provides more electrons into the AlGaN/GaN channel,which is further confirmed experimentally.When compared with the reference device,this increases the two-dimensional electron gas(2DEG)density by two times and leads to a reduced specific ON-resistance(Ron,sp)of~2.4 mΩ·cm^(2).We also adopt the trenched n^(+)-GaN structure such that partial of the n^(+)-GaN is removed by using dry etching process to eliminate the surface electrical conduction when the device is set in the off-state.To suppress the surface defects that are caused by the dry etching process,we also deposit Si_(3)N_(4)layer prior to the deposition of field plate(FP),and we obtain a reduced leakage current of~8×10^(−5)A·cm^(−2)and breakdown voltage(BV)of 876 V.The Baliga’s figure of merit(BFOM)for the proposed structure is increased to~319 MW·cm^(−2).Our investigations also find that the pre-deposited Si_(3)N_(4)layer helps suppress the electron capture and transport processes,which enables the reduced dynamic R_(on,sp).展开更多
基金supported by the National Natural Science Foundation of China(Grants 42325404,42120104003,42204164,42474219 and U22A2006)the Chinese Meridian Project,the International Partnership Program of Chinese Academy of Sciences(Grant 183311KYSB20200003)+7 种基金Shandong Provincial Natural Science Foundation(Grants ZR2022QD077,ZR2022MD034)the Stable-Support Scientific Project of China Research Institute of Radiowave Propagation(Grant A132312191)the foundation of the National Key Laboratory of Electromagnetic Environment(Grant 6142403180204)the Chongqing Natural Science Foundation(Grants cstc2021ycjh-bgzxm0072,CSTB2023NSCQ-LZX0082)National Program on Key Basic Research Project(Grant 2022173-SD-1)The work in Norway is supported by the Research Council of Norway Grant 326039Work at UCLA has been supported by NSF grant AGS-2055192This research was supported by the International Space Science Institute(ISSI)in Bern and Beijing,through ISSI International Team project#511(Multi-Scale Magnetosphere-Ionosphere-Thermosphere Interaction).
文摘This paper is a statistical survey of Southern Hemisphere cold and hot polar cap patches,in relation to the interplanetary magnetic field(IMF)and ionospheric convection geometry.A total of 11,946 patch events were identified by Defense Meteorological Satellite Program(DMSP)F16 during the years 2011 to 2022.A temperature ratio of ion/electron temperature(T_(i)/T_(e))<0.68 is recommended to define a hot patch in the Southern Hemisphere,otherwise it is defined as a cold patch.The cold and hot patches have different dependencies on IMF clock angle,while their dependencies on IMF cone angle are similar.Both cold and hot patches appear most often on the duskside,and the distribution of cold patches gradually decreases from the dayside to the nightside,while hot patches have a higher occurrence rate near 14 and 21 magnetic local time(MLT).Moreover,we compared the key plasma characteristics of polar cap cold and hot patches in the Southern and Northern Hemispheres.The intensity of the duskside upward field-aligned current of patches in the Southern Hemisphere(SH)is stronger than that in the Northern Hemisphere(SH),which may be due to the discrepancy in conductivities between the two hemispheres,caused by the tilted dipole.In both hemispheres,the downward soft-electron energy flux of the dawnside patches is significantly greater than that of the duskside patches.
基金supported by the National Key R&D Program of China(Grant No.2022YFB3806300).
文摘Infrared-transparent conductors have attracted considerable attention due to their potential applications in electromagnetic shielding,infrared sensors,and photovoltaic devices.However,most known materials face the critical challenge of balancing high infrared transmittance with high electrical conductivity across the broad infrared spectral band(2.5-25μm).While ultra-thin indium tin oxide(ITO)films have been demonstrated to exhibit superior infrared transmittance,their inherent low electrical conductivity necessitates additional enhancement strategies.This study systematically investigates the effects of oxygen vacancy concentration regulation and ultra-thin copper capping layer integration on the infrared optoelectronic properties of 20 nm-thick ITO films.A fundamental trade-off is revealed in ITO films that increased oxygen vacancy content enhances the electrical conductivity while compromising the infrared transmittance.Meanwhile,following the introduction of a Cu capping layer,the Cu/ITO system exhibits opposing dependencies of infrared transmittance and electrical conductivity on the capping layer thickness,with an optimum thickness of~3 nm.Finally,by constructing a Cu(3 nm)/ITO(20 nm)heterostructure with varying oxygen vacancy content,we demonstrate the combined effect of the ultra-thin Cu capping layer and moderate oxygen vacancy content on optimizing the carrier transport network.This configuration simultaneously minimizes surface/interfacial reflection and absorption losses,achieving high infrared transmittance(0.861)and a low sheet resistance of 400 W/sq.Our findings highlight the critical role of the combined effect of metal/oxide heterostructure design and defect engineering in optimizing infrared-transparent conductive properties.
基金National Natural Science Foundation of China(No.52375236)Fundamental Research Funds for the Central Universities,China(No.23D110316)。
文摘In the structural reliability analysis,the first-order reliability method(FORM)often yields significant errors when addressing nonlinear problems.Although the second-order reliability method(SORM)can provide higher accuracy,the additional computation of the Hessian matrix leads to lower computational efficiency.Additionally,when the dimensionality of the random variables is high,the approximation formula of SORM can result in larger errors.To address these issues,a structural reliability analysis method based on Kriging and spherical cap area integral is proposed.Firstly,this method integrates FORM with the quasi-Newton algorithm Broyden-Fletcher-Goldfarb-Shanno(BFGS),trains the Kriging model by using sample points from the algorithm’s iteration process,and combines the Kriging model with gradient information to approximate the Hessian matrix.Then,the failure surface is approximated as a rotating paraboloid,utilizing the spherical cap to replace the complex surface.For the n-dimensional case,the hyperspherical cap area expression is combined with the integral method to calculate the failure probability.Finally,the method is validated through three examples,demonstrating improved computational accuracy and efficiency compared to traditional methods.
基金supported by National Natural Science Foundation of China under grant U23A20361Key Area R&D Program of Guangdong Province under grant 2022B0701180001.
文摘In this work,we design and fabricate AlGaN/GaN-based Schottky barrier diodes(SBDs)on a silicon substrate with a trenched n^(+)-GaN cap layer.With the developed physical models,we find that the n^(+)-GaN cap layer provides more electrons into the AlGaN/GaN channel,which is further confirmed experimentally.When compared with the reference device,this increases the two-dimensional electron gas(2DEG)density by two times and leads to a reduced specific ON-resistance(Ron,sp)of~2.4 mΩ·cm^(2).We also adopt the trenched n^(+)-GaN structure such that partial of the n^(+)-GaN is removed by using dry etching process to eliminate the surface electrical conduction when the device is set in the off-state.To suppress the surface defects that are caused by the dry etching process,we also deposit Si_(3)N_(4)layer prior to the deposition of field plate(FP),and we obtain a reduced leakage current of~8×10^(−5)A·cm^(−2)and breakdown voltage(BV)of 876 V.The Baliga’s figure of merit(BFOM)for the proposed structure is increased to~319 MW·cm^(−2).Our investigations also find that the pre-deposited Si_(3)N_(4)layer helps suppress the electron capture and transport processes,which enables the reduced dynamic R_(on,sp).
