110 nm-thick Au layers were sputter-deposited on unheated glasses coatedabout a 10 nm-thick and a 50 nm-thick Cr layer respectively. The Au/Cr bilayer films were annealedin a vacuum of 1 mPa at 300℃ for 2, 5 and 30 m...110 nm-thick Au layers were sputter-deposited on unheated glasses coatedabout a 10 nm-thick and a 50 nm-thick Cr layer respectively. The Au/Cr bilayer films were annealedin a vacuum of 1 mPa at 300℃ for 2, 5 and 30 min, respectively. Auger electron spectroscopy, X-raydiffraction and Field emission scanning electron microscopy were used to analyze the composition andstructure of the Au layers. The resistivity of the bilayer films was measured by using four-pointprobe technique. The adhesion of the bilayer films to the substrate was tested using tape tests. Theamount of Cr atoms diffusing into the Au layer increases with increasing the annealing time,resulting in a decrease in lattice constant and an increase in resistivity of the Au layer. Thecontent of Cr inside the Au layer grown on the thinner Cr layer is less than that grown on thethicker Cr layer. For the Au/Cr bilayer films, the lower resistivity and the good adhesion to theglass substrate can be obtained at a shorter annealing time for a thinner Cr layer.展开更多
A multilayer(Ti/Pt/Cr/Au)resistive temperature sensor was proposed and investigated to precisely measure the temperature characteristic in microfluidic devices.The Ti/Pt/Cr/Au sensor was fabricated by direct current(D...A multilayer(Ti/Pt/Cr/Au)resistive temperature sensor was proposed and investigated to precisely measure the temperature characteristic in microfluidic devices.The Ti/Pt/Cr/Au sensor was fabricated by direct current(DC)sputtering,vacuum evaporation and liftoff process.The thermal annealing test was conducted in the temperature range of 200-800℃for obtaining an appropriate property of the multilayer.Based on the experimental results,400℃was selected as the experimental annealing temperature for the Ti/Pt/Cr/Au layer.The redistribution of structural imperfections and recrystallization promote the density and adhesion of multilayer during the annealing process.With the annealing temperature rising,the annealing process leads to through-thickness migration of chromium and partial depletion of the adhesive layer.The Ti also diffuses into the Pt,which makes the interface disappear.Nevertheless,the layer remains continuous.The temperature coefficient of resistance(TCR)of the sensors was investigated through the microfluidic testing system.The excellent stability and sensitivity of the Ti/Pt/Cr/Au thin-film temperature sensor are verified.Furthermore,the capability of the Ti/Pt/Cr/Au thin-film temperature sensor detecting the sudden temperature change caused by bubble effect is very meaningful to the microfluidic devices.展开更多
文摘110 nm-thick Au layers were sputter-deposited on unheated glasses coatedabout a 10 nm-thick and a 50 nm-thick Cr layer respectively. The Au/Cr bilayer films were annealedin a vacuum of 1 mPa at 300℃ for 2, 5 and 30 min, respectively. Auger electron spectroscopy, X-raydiffraction and Field emission scanning electron microscopy were used to analyze the composition andstructure of the Au layers. The resistivity of the bilayer films was measured by using four-pointprobe technique. The adhesion of the bilayer films to the substrate was tested using tape tests. Theamount of Cr atoms diffusing into the Au layer increases with increasing the annealing time,resulting in a decrease in lattice constant and an increase in resistivity of the Au layer. Thecontent of Cr inside the Au layer grown on the thinner Cr layer is less than that grown on thethicker Cr layer. For the Au/Cr bilayer films, the lower resistivity and the good adhesion to theglass substrate can be obtained at a shorter annealing time for a thinner Cr layer.
基金financially supported by the National Natural Science Foundation of China(No.51602039)the Central University Support Project(No.ZYGX2016J051)。
文摘A multilayer(Ti/Pt/Cr/Au)resistive temperature sensor was proposed and investigated to precisely measure the temperature characteristic in microfluidic devices.The Ti/Pt/Cr/Au sensor was fabricated by direct current(DC)sputtering,vacuum evaporation and liftoff process.The thermal annealing test was conducted in the temperature range of 200-800℃for obtaining an appropriate property of the multilayer.Based on the experimental results,400℃was selected as the experimental annealing temperature for the Ti/Pt/Cr/Au layer.The redistribution of structural imperfections and recrystallization promote the density and adhesion of multilayer during the annealing process.With the annealing temperature rising,the annealing process leads to through-thickness migration of chromium and partial depletion of the adhesive layer.The Ti also diffuses into the Pt,which makes the interface disappear.Nevertheless,the layer remains continuous.The temperature coefficient of resistance(TCR)of the sensors was investigated through the microfluidic testing system.The excellent stability and sensitivity of the Ti/Pt/Cr/Au thin-film temperature sensor are verified.Furthermore,the capability of the Ti/Pt/Cr/Au thin-film temperature sensor detecting the sudden temperature change caused by bubble effect is very meaningful to the microfluidic devices.
