The samples of Au/（Si/SiO2 ）/p-Si structure were fabricated by using the R. F magnetron sputtering technique. Its carrier transport and electroluminescence mechanism were studied from the Ⅰ-Ⅴ curves and EL spectra...The samples of Au/（Si/SiO2 ）/p-Si structure were fabricated by using the R. F magnetron sputtering technique. Its carrier transport and electroluminescence mechanism were studied from the Ⅰ-Ⅴ curves and EL spectra by using the Configuration Coordinate as a theoretical model. The result indicates that there are two defect centers in SiO2 films. The electron in Au and the hole in p-Si went into SiO2 film by the Fowler-Nordheim tunneling model at a high bias voltage and recombined through these defect centers in SiO2 film.展开更多
文摘The samples of Au/（Si/SiO2 ）/p-Si structure were fabricated by using the R. F magnetron sputtering technique. Its carrier transport and electroluminescence mechanism were studied from the Ⅰ-Ⅴ curves and EL spectra by using the Configuration Coordinate as a theoretical model. The result indicates that there are two defect centers in SiO2 films. The electron in Au and the hole in p-Si went into SiO2 film by the Fowler-Nordheim tunneling model at a high bias voltage and recombined through these defect centers in SiO2 film.
