Surface photovoltage spectroscopy equations for cathode materials with an AlxGa1-xAs buffer layer are determined in order to effectively measure the body parameters for transmission-mode （t-mode） photocathode materi...Surface photovoltage spectroscopy equations for cathode materials with an AlxGa1-xAs buffer layer are determined in order to effectively measure the body parameters for transmission-mode （t-mode） photocathode materials before Cs-O activation. Body parameters of cathode materials are well fitted through experiments and fitting calculations for the designed AlxGa1-xAs/GaAs structure material. This investigation examines photo-excited performance and measurements of body parameters for t-mode cathode materials of different doping structures. It also helps study various doping structures and optimize structure designs in the future.展开更多
基金supported by the General Administra-tion for Quality Supervision of China(No.2008QK328)the Zhejiang Provincial Natural Science Foundation of China(No.Y5090150)
文摘Surface photovoltage spectroscopy equations for cathode materials with an AlxGa1-xAs buffer layer are determined in order to effectively measure the body parameters for transmission-mode （t-mode） photocathode materials before Cs-O activation. Body parameters of cathode materials are well fitted through experiments and fitting calculations for the designed AlxGa1-xAs/GaAs structure material. This investigation examines photo-excited performance and measurements of body parameters for t-mode cathode materials of different doping structures. It also helps study various doping structures and optimize structure designs in the future.
