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Random-Gate-Voltage Induced Al'tshuler–Aronov–Spivak Effect in Topological Edge States
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作者 Kun Luo Wei Chen +1 位作者 Li Sheng D.Y.Xing 《Chinese Physics Letters》 SCIE CAS CSCD 2021年第11期7-12,共6页
Helical edge states are the hallmark of the quantum spin Hall insulator. Recently, several experiments have observed transport signatures contributed by trivial edge states, making it difficult to distinguish between ... Helical edge states are the hallmark of the quantum spin Hall insulator. Recently, several experiments have observed transport signatures contributed by trivial edge states, making it difficult to distinguish between the topologically trivial and nontrivial phases. Here, we show that helical edge states can be identified by the randomgate-voltage induced Φ_(0)/2-period oscillation of the averaged electron return probability in the interferometer constructed by the edge states. The random gate voltage can highlight the Φ_(0)/2-period Al'tshuler–Aronov–Spivak oscillation proportional to sin^(2)(2πΦ/Φ_(0)) by quenching the Φ_(0)-period Aharonov–Bohm oscillation. It is found that the helical spin texture induced π Berry phase is key to such weak antilocalization behavior with zero return probability at Φ = 0. In contrast, the oscillation for the trivial edge states may exhibit either weak localization or antilocalization depending on the strength of the spin-orbit coupling, which has finite return probability at Φ = 0. Our results provide an effective way for the identification of the helical edge states. The predicted signature is stabilized by the time-reversal symmetry so that it is robust against disorder and does not require any fine adjustment of system. 展开更多
关键词 AAS Spivak Effect in Topological Edge States aronov Random-Gate-Voltage Induced Al'tshuler
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(110)-GaAs量子阱中光生载流子对电子自旋弛豫的影响
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作者 刘晓波 张桐耀 陈院森 《量子光学学报》 北大核心 2017年第2期195-200,共6页
我们实验研究了(110)-GaAs量子阱中光生载流子对电子自旋弛豫的影响。通过测量量子阱的荧光寿命和光学吸收计算,我们能得到不同泵浦光功率下的带间吸收所产生的空穴浓度;相对应地,通过双色磁光科尔旋转技术,我们测量了该GaAs量子阱中电... 我们实验研究了(110)-GaAs量子阱中光生载流子对电子自旋弛豫的影响。通过测量量子阱的荧光寿命和光学吸收计算,我们能得到不同泵浦光功率下的带间吸收所产生的空穴浓度;相对应地,通过双色磁光科尔旋转技术,我们测量了该GaAs量子阱中电子自旋的动力学过程。结合两者,我们得到了电子自旋弛豫速率与空穴浓度的关系。实验结果表明电子自旋弛豫速率与空穴浓度呈线性依赖关系,验证了BirAronov-Pikus机制主导该体系的电子自旋弛豫。 展开更多
关键词 自旋弛豫 磁光科尔旋转 Bir-aronov-Pikus机制
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