Surface states are expected to play a key role in broadband terahertz(THz) emitters, where photoexcited carrier distributions are confined within about 1 μm of the surface. Optical pump and THz probe spectroscopy was...Surface states are expected to play a key role in broadband terahertz(THz) emitters, where photoexcited carrier distributions are confined within about 1 μm of the surface. Optical pump and THz probe spectroscopy was used to study the dynamics of nonequilibrium charge carriers in both textured and non-textured GaAs substrates.Our findings show that the textured surface acts as an antireflective layer, greatly boosting the infrared pump laser's coupling efficiency into the semi-insulating GaAs substrate. Additionally, texturing introduces a trapassisted recombination pathway, speeding up carrier relaxation and thus reducing Joule heating. Under the same pumping and bias field conditions, the coarse-textured GaAs photoconductive antenna shows nearly 7.85 times stronger THz emission amplitude than the non-textured device, along with improvement in signal-to-noise ratio.At a fixed bias field, higher pump power increases photogenerated carrier density, causing bias field screening and subsequent saturation of THz emission. At fixed pump power, when the bias field reaches ~2.5 kV/cm, both THz emission and photocurrent spectra show a clear kink, signaling intervalley scattering from the Γ valley to the L(X) valleys under high electric fields.展开更多
Perovskite/silicon(Si) tandem solar cells have been recognized as the next-generation photovoltaic technology with efficiency over 30% and low cost. However, the intrinsic instability of traditional three-dimensional(...Perovskite/silicon(Si) tandem solar cells have been recognized as the next-generation photovoltaic technology with efficiency over 30% and low cost. However, the intrinsic instability of traditional three-dimensional(3D) hybrid perovskite seriously hinders the lifetimes of tandem devices. In this work, the quasi-two-dimensional(2D)(BA)_(2)(MA)_(n-1)Pbn I_(3n+1)(n = 1, 2, 3, 4, 5)(where MA denotes methylammonium and BA represents butylammonium), with senior stability and wider bandgap, are first used as an absorber of semitransparent top perovskite solar cells(PSCs) to construct a fourterminal(4T) tandem devices with a bottom Si-heterojunction cell. The device model is established by Silvaco Atlas based on experimental parameters. Simulation results show that in the optimized tandem device, the top cell(n = 4) obtains a power conversion efficiency(PCE) of 17.39% and the Si bottom cell shows a PCE of 11.44%, thus an overall PCE of 28.83%. Furthermore, by introducing a 90-nm lithium fluoride(LiF) anti-reflection layer to reduce the surface reflection loss, the current density(J_(sc)) of the top cell is enhanced from 15.56 m A/cm^(2) to 17.09 m A/cm^(2), the corresponding PCE reaches 19.05%, and the tandem PCE increases to 30.58%. Simultaneously, in the cases of n = 3, 4, and 5, all the tandem PCEs exceed the limiting theoretical efficiency of Si cells. Therefore, the 4T quasi-2D perovskite/Si devices provide a more cost-effective tandem strategy and long-term stability solutions.展开更多
基金supported by the National Key Research and Development Program of China (Grant No.2023YFF0719200)the National Natural Science Foundation of China (Grant Nos.62322115,U24A20226,62588201,62435010,and 62335012)+2 种基金the 111 Project (Grant No.D18014)the Key project supported by Science and Technology Commission Shanghai Municipality (Grant No.YDZX20193100004960)Science and Technology Commission of Shanghai Municipality (Grant Nos.22JC1400200 and 21S31907400)。
文摘Surface states are expected to play a key role in broadband terahertz(THz) emitters, where photoexcited carrier distributions are confined within about 1 μm of the surface. Optical pump and THz probe spectroscopy was used to study the dynamics of nonequilibrium charge carriers in both textured and non-textured GaAs substrates.Our findings show that the textured surface acts as an antireflective layer, greatly boosting the infrared pump laser's coupling efficiency into the semi-insulating GaAs substrate. Additionally, texturing introduces a trapassisted recombination pathway, speeding up carrier relaxation and thus reducing Joule heating. Under the same pumping and bias field conditions, the coarse-textured GaAs photoconductive antenna shows nearly 7.85 times stronger THz emission amplitude than the non-textured device, along with improvement in signal-to-noise ratio.At a fixed bias field, higher pump power increases photogenerated carrier density, causing bias field screening and subsequent saturation of THz emission. At fixed pump power, when the bias field reaches ~2.5 kV/cm, both THz emission and photocurrent spectra show a clear kink, signaling intervalley scattering from the Γ valley to the L(X) valleys under high electric fields.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 62004151, 62274126, 62274126, 61874083, and 61804113)the China Postdoctoral Science Foundation (Grant No. 2020T130490)。
文摘Perovskite/silicon(Si) tandem solar cells have been recognized as the next-generation photovoltaic technology with efficiency over 30% and low cost. However, the intrinsic instability of traditional three-dimensional(3D) hybrid perovskite seriously hinders the lifetimes of tandem devices. In this work, the quasi-two-dimensional(2D)(BA)_(2)(MA)_(n-1)Pbn I_(3n+1)(n = 1, 2, 3, 4, 5)(where MA denotes methylammonium and BA represents butylammonium), with senior stability and wider bandgap, are first used as an absorber of semitransparent top perovskite solar cells(PSCs) to construct a fourterminal(4T) tandem devices with a bottom Si-heterojunction cell. The device model is established by Silvaco Atlas based on experimental parameters. Simulation results show that in the optimized tandem device, the top cell(n = 4) obtains a power conversion efficiency(PCE) of 17.39% and the Si bottom cell shows a PCE of 11.44%, thus an overall PCE of 28.83%. Furthermore, by introducing a 90-nm lithium fluoride(LiF) anti-reflection layer to reduce the surface reflection loss, the current density(J_(sc)) of the top cell is enhanced from 15.56 m A/cm^(2) to 17.09 m A/cm^(2), the corresponding PCE reaches 19.05%, and the tandem PCE increases to 30.58%. Simultaneously, in the cases of n = 3, 4, and 5, all the tandem PCEs exceed the limiting theoretical efficiency of Si cells. Therefore, the 4T quasi-2D perovskite/Si devices provide a more cost-effective tandem strategy and long-term stability solutions.
