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Determination of Slip Length in Couette Flow Based on an Analytical Simulation Incorporating Surface Interaction 被引量:1
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作者 赵欣 魏超 苑士华 《Chinese Physics Letters》 SCIE CAS CSCD 2017年第3期77-81,共5页
An analytical simulation based on a new model incorporating surface interaction is conducted to study the slip phenomenon in the Couette flow at different scales. The velocity profile is calculated by taking account o... An analytical simulation based on a new model incorporating surface interaction is conducted to study the slip phenomenon in the Couette flow at different scales. The velocity profile is calculated by taking account of the micro-force between molecules and macro-force from the viscous shearing effect, as they contribute to the achieve- ment of the slip length. The calculated results are compared with those obtained from the molecular dynamics simulation, showing an excellent agreement. Further, the effect of the shear rate on the slip is investigated. The results can well predict the fluid flow behaviors on a solid substrate, but has to be proved by experiment. 展开更多
关键词 MD Determination of Slip Length in Couette Flow Based on an analytical Simulation Incorporating surface Interaction
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A full-dimensional analytical potential energy surface for the F+CH_4→HF+CH_3 reaction
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作者 杨传路 王美山 +2 位作者 刘文旺 张志红 马晓光 《Chinese Physics B》 SCIE EI CAS CSCD 2013年第6期314-321,共8页
A full-dimensional analytical potential energy surface (APES) for the F + CH4 →HF + CH3 reaction is developed based on 7127 ab initio energy points at the unrestricted coupled-cluster with single, double, and per... A full-dimensional analytical potential energy surface (APES) for the F + CH4 →HF + CH3 reaction is developed based on 7127 ab initio energy points at the unrestricted coupled-cluster with single, double, and perturbative triple excitations. The correlation-consistent polarized triple-split valence basis set is used. The APES is represented with a many-body expansion containing 239 parameters determined by the least square fitting method. The two-body terms of the APES are fitted by potential energy curves with multi-reference configuration interaction, which can describe the diatomic molecules (CH, H2, HF, and CF) accurately. It is found that the APES can reproduce the geometry and vibrational frequencies of the saddle point better than those available in the literature. The rate constants based on the present APES support the experimental results of Moore et al. [Int. J. Chem. Kin. 26, 813 (1994)]. The analytical first-order derivation of energy is also provided, making the present APES convenient and efficient for investigating the title reaction with quasiclassical trajectory calculations. 展开更多
关键词 analytical potential energy surface least square fitting method UCCSD(T) F CH4 →HF CH3reaction
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Analytical formula of rectangular surface mobility of an infinite plate and the parameters influences
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作者 DAI Jue(Shenzhen Polytechnic Shenzhen 518055) 《Chinese Journal of Acoustics》 2003年第1期59-67,共9页
This paper investigates the characteristics of surface mobility when power transmission over the contact area between sub-structures is considered. An analytical formula of the surface mobility of an infinite homogene... This paper investigates the characteristics of surface mobility when power transmission over the contact area between sub-structures is considered. An analytical formula of the surface mobility of an infinite homogeneous plate over a rectangular contact area subject to a uniform, conphase force excitation is derived by using complex power method and the concept of structural intensity. This formula provides a theoretical tool for investigating power transmission over the contact area between sub-structures. The influences of the size, the dimension and the aspect ratio of the contact area on power transmission are analyzed and described according to the results calculated, that provides an effectively theoretical method for investigation of vibration isolation. 展开更多
关键词 of it on for area BE analytical formula of rectangular surface mobility of an infinite plate and the parameters influences is into
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Analytical modeling and simulation of germanium single gate silicon on insulator TFET 被引量:1
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作者 T.S.Arun Samuel N.B.Balamurugan 《Journal of Semiconductors》 EI CAS CSCD 2014年第3期25-28,共4页
This paper proposes a new two dimensional(2D) analytical model for a germanium(Ge) single gate silicon-on-insulator tunnel field effect transistor(SG SOI TFET). The parabolic approximation technique is used to s... This paper proposes a new two dimensional(2D) analytical model for a germanium(Ge) single gate silicon-on-insulator tunnel field effect transistor(SG SOI TFET). The parabolic approximation technique is used to solve the 2D Poisson equation with suitable boundary conditions and analytical expressions are derived for the surfacepotential,theelectricfieldalongthechannelandtheverticalelectricfield.Thedeviceoutputtunnellingcurrent is derived further by using the electric fields. The results show that Ge based TFETs have significant improvements inon-currentcharacteristics.Theeffectivenessoftheproposedmodelhasbeenverifiedbycomparingtheanalytical model results with the technology computer aided design(TCAD) simulation results and also comparing them with results from a silicon based TFET. 展开更多
关键词 tunnel field effect transistor(TFET) analytical modelling Poisson equation surface potential electric field
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