期刊文献+
共找到1,422篇文章
< 1 2 72 >
每页显示 20 50 100
Structural vibration control using nonlinear damping amplifier friction vibration absorbers
1
作者 S.CHOWDHURY S.ADHIKARI 《Applied Mathematics and Mechanics(English Edition)》 2025年第5期965-988,共24页
This paper introduces damping amplifier friction vibration absorbers(DAFVAs),compound damping amplifier friction vibration absorbers(CDAFVAs),nested damping amplifier friction vibration absorbers(NDAFVAs),and levered ... This paper introduces damping amplifier friction vibration absorbers(DAFVAs),compound damping amplifier friction vibration absorbers(CDAFVAs),nested damping amplifier friction vibration absorbers(NDAFVAs),and levered damping amplifier friction vibration absorbers(LDAFVAs)for controlling the structural vibrations and addressing the limitations of conventional tuned mass dampers(TMDs)and frictiontuned mass dampers(FTMDs).The closed-form analytical solution for the optimized design parameters is obtained using the H_(2)and H_(∞)optimization approaches.The efficiency of the recently established closed-form equations for the optimal design parameters is confirmed by the analytical examination.The closed form formulas for the dynamic responses of the main structure and the vibration absorbers are derived using the transfer matrix formulations.The foundation is provided by the harmonic and random-white noise excitations.Moreover,the effectiveness of the innovative dampers has been validated through numerical analysis.The optimal DAFVAs,CDAFVAs,NDAFVAs,and LDAFVAs exhibit at least 30%lower vibration reduction capacity compared with the optimal TMD.To demonstrate the effectiveness of the damping amplification mechanism,the novel absorbers are compared with a conventional FTMD.The results show that the optimized novel absorbers achieve at least 91%greater vibration reduction than the FTMD.These results show how the suggested designs might strengthen the structure's resilience to dynamic loads. 展开更多
关键词 damping amplifier friction vibration absorber(DAFVA) compound damping amplifier friction vibration absorber(CDAFVA) nested damping amplifier friction vibration absorber(NDAFVA) levered damping amplifier friction vibration absorber(LDAFVA) H2 and H∞optimization approaches
在线阅读 下载PDF
Determination of optical properties of a single-mode class-A laser amplifier using the noise fluxes generated by cavity Langevin force
2
作者 J Jahanpanah D H Dastjerdi A A Rahdar 《Communications in Theoretical Physics》 2025年第8期150-159,共10页
The noise feature of a single-mode class-A laser amplifier is investigated by solving the Maxwell–Bloch equations of motion in the presence of the fluctuation force of cavity Langevin.The aim is to calculate the simu... The noise feature of a single-mode class-A laser amplifier is investigated by solving the Maxwell–Bloch equations of motion in the presence of the fluctuation force of cavity Langevin.The aim is to calculate the simultaneous fluctuations that are superimposed on the amplitude and phase of the cavity electric field, as well as the atomic population inversion. The correlation function of these fluctuations yields the amplitude, phase, and spontaneous emission noise fluxes, respectively. The amplitude and spontaneous emission noise fluxes exhibit the Lorentzian profiles in both the below-threshold state and the injection-locking region of the above-threshold state. While noise is typically viewed negatively in science and engineering, this research highlights its positive role as a valuable tool for measuring the optical properties of a laser amplifier. For instance, the degree of first-order temporal coherence(DFOTC) is derived by taking the Fourier transform of the amplitude noise flux. The damping rate of DFOTC is associated with the coherence time of the light emitted by the laser amplifier. Furthermore, the uncertainty relation between noise bandwidth and coherence time is confirmed. Finally, it is demonstrated that the input pumping noise flux, together with the output amplitude and spontaneous emission noise fluxes, satisfy the principle of flux conservation. 展开更多
关键词 cavity langevin force amplitude noise flux correlation function spontaneous emission noise flux single-mode class-A laser amplifier
原文传递
Mode-bases gain difference for different phase profiles in few-mode erbium-doped fiber amplifiers
3
作者 Jie Zhang Shecheng Gao +5 位作者 Wei Li Jiajing Tu Yanghua Xie Cheng Du Weiping Liu Zhaohui Li 《Advanced Photonics Nexus》 2025年第1期59-67,共9页
In a few-mode erbium-doped fiber(FM-EDF),which is a key section in a space-division multiplexing(SDM)communication system,linearly polarized(LP)and orbital angular momentum(OAM)modes,as twomode bases with different ph... In a few-mode erbium-doped fiber(FM-EDF),which is a key section in a space-division multiplexing(SDM)communication system,linearly polarized(LP)and orbital angular momentum(OAM)modes,as twomode bases with different phase profiles,can be transformed into each other.In principle,the LP and OAM modes have a different mode spatial intensity distribution and a gain difference for FM-EDF amplifiers.How to analyze and characterize the differential mode-bases gain(DMBG)is important,but still an issue.We build,for the first time to our knowledge,a local analysis model composed of discrete elements of the FM-EDF cross section in areas of mode spatial intensity distribution azimuthal variation.Using the model of the two mode bases,analysis of local particle number distribution and detailed description of the local gain difference are realized,and the overall gain difference between the two mode bases is obtained.By building an amplifier system based on mode phase profile controlling,the gain of two mode bases is characterized experimentally.The measured DMBG is∼0.8 dB in the second-order mode,which is consistent with the simulation result.This result provides a potential way to reduce the mode gain difference in the FM-EDF,which is important in improving the performance of the SDM communication system. 展开更多
关键词 space-division multiplexing few-mode erbium-doped fiber amplifier linearly polarization orbital angular momentum.
在线阅读 下载PDF
Gain adaptive tuning method for fiber Raman amplifier based on two-stage neural networks and double weights updates
4
作者 MU Kuanlin WU Yue 《Optoelectronics Letters》 2025年第5期284-289,共6页
We present a gain adaptive tuning method for fiber Raman amplifier(FRA) using two-stage neural networks(NNs) and double weights updates. After training the connection weights of two-stage NNs separately in training ph... We present a gain adaptive tuning method for fiber Raman amplifier(FRA) using two-stage neural networks(NNs) and double weights updates. After training the connection weights of two-stage NNs separately in training phase, the connection weights of the unified NN are updated again in verification phase according to error between the predicted and target gains to eliminate the inherent error of the NNs. The simulation results show that the mean of root mean square error(RMSE) and maximum error of gains are 0.131 d B and 0.281 d B, respectively. It shows that the method can realize adaptive adjustment function of FRA gain with high accuracy. 展开更多
关键词 gain adaptive tuning connection weights error predicted target gains training connection weights unified nn gain adaptive tuning method double weights updates fiber raman amplifier fra
原文传递
High fiber-to-fiber net gain in erbium-doped thin film lithium niobate waveguide amplifier as an external gain chip
5
作者 Jinli Han Mengqi Li +7 位作者 Rongbo Wu Jianping Yu Lang Gao Zhiwei Fang Min Wang Youting Liang Haisu Zhang Ya Cheng 《Opto-Electronic Science》 2025年第9期1-10,共10页
Miniaturized erbium-doped waveguide amplifiers attracted great interests in recent decades due to their high gain-efficiency and function-scalability in the telecom C-band.In this work,an erbium-doped thin film lithiu... Miniaturized erbium-doped waveguide amplifiers attracted great interests in recent decades due to their high gain-efficiency and function-scalability in the telecom C-band.In this work,an erbium-doped thin film lithium niobate waveguide amplifier achieving>10 dB off-chip(fiber-to-fiber)net gain and>20 mW fiber-output amplified power is demonstrated,thanks to the low-propagation-loss waveguides and robust waveguide edge-couplers prepared by the photolithography assisted chemomechanical etching technique.Systematic investigation on the fabricated waveguide amplifiers reveals remarkable optical gain around the peak wavelength of 1532 nm as well as the low fiber-coupling loss of-1.2 dB/facet.A fiber Bragg-grating based waveguide laser is further demonstrated using the fabricated waveguide amplifier as the external gain chip,which generates>2 mW off-chip power continuous-wave lasing around the gain peak at 1532 nm.The unambiguous demonstration of fiber-to-fiber net gain of the erbium-doped thinfilm lithium niobate(TFLN)waveguide amplifier as well as its external gain chip application will benefit diverse fields demanding scalable gain elements with highspeed tunability. 展开更多
关键词 integrated photonics thin-film lithium niobate erbium doped waveguide amplifier
在线阅读 下载PDF
A two-stage injection locking amplifier based on a cavity magnonic oscillator
6
作者 Mun Kim Chunlei Zhang +2 位作者 Chenyang Lu Jacob Burgess Can-Ming Hu 《Chinese Physics B》 2025年第6期154-159,共6页
A cavity magnonic oscillator uses the coupling of a planar transmission line oscillator(cavity) and spin excitations(magnons) in a ferrimagnetic material to achieve superior frequency stability and reduced phase noise... A cavity magnonic oscillator uses the coupling of a planar transmission line oscillator(cavity) and spin excitations(magnons) in a ferrimagnetic material to achieve superior frequency stability and reduced phase noise. Like many low phase noise oscillators, a cavity magnonic oscillator faces the challenge that its narrow resonance profile is not well suited for injection locking amplification. This work presents an improved design for such an oscillator configured as an injection locking amplifier(ILA) with an extended lock range. The proposed design features a two-stage architecture, consisting of a pre-amplification oscillator and a cavity magnonic oscillator, separated by an isolator to prevent backward locking.By optimizing the circuit parameters of each stage, the proposed design achieved an order of magnitude increase in lock range, when compared to its predecessors, all while preserving the phase noise quality of the input, making it well-suited for narrowband, sensitive signal amplification. Furthermore, this work provides a method for using oscillators with high spectral purity as injection locking amplifiers. 展开更多
关键词 cavity magnonic oscillator injection locking amplifier
原文传递
Cache Memory Design for Single Bit Architecture with Different Sense Amplifiers
7
作者 Reeya Agrawal Anjan Kumar +3 位作者 Salman A.AlQahtani Mashael Maashi Osamah Ibrahim Khalaf Theyazn H.H.Aldhyani 《Computers, Materials & Continua》 SCIE EI 2022年第11期2313-2331,共19页
Most modern microprocessors have one or two levels of on-chip caches to make things run faster,but this is not always the case.Most of the time,these caches are made of static random access memory cells.They take up a... Most modern microprocessors have one or two levels of on-chip caches to make things run faster,but this is not always the case.Most of the time,these caches are made of static random access memory cells.They take up a lot of space on the chip and use a lot of electricity.A lot of the time,low power is more important than several aspects.This is true for phones and tablets.Cache memory design for single bit architecture consists of six transistors static random access memory cell,a circuit of write driver,and sense amplifiers(such as voltage differential sense amplifier,current differential sense amplifier,charge transfer differential sense amplifier,voltage latch sense amplifier,and current latch sense amplifier,all of which are compared on different resistance values in terms of a number of transistors,delay in sensing and consumption of power.The conclusion arises that single bit six transistor static random access memory cell voltage differential sense amplifier architecture consumes 11.34μW of power which shows that power is reduced up to 83%,77.75%reduction in the case of the current differential sense amplifier,39.62%in case of charge transfer differential sense amplifier and 50%in case of voltage latch sense amplifier when compared to existing latch sense amplifier architecture.Furthermore,power reduction techniques are applied over different blocks of cache memory architecture to optimize energy.The single-bit six transistors static random access memory cell with forced tack technique and voltage differential sense amplifier with dual sleep technique consumes 8.078μW of power,i.e.,reduce 28%more power that makes single bit six transistor static random access memory cell with forced tack technique and voltage differential sense amplifier with dual sleep technique more energy efficient. 展开更多
关键词 Current differential sense amplifier(CDSA) voltage differential sense amplifier(VDSA) voltage latch sense amplifier(VLSA) current latch sense amplifier(CLSA) charge-transfer differential sense amplifier(CTDSA) new emerging technologies
在线阅读 下载PDF
Three-channel CMOS transimpedance amplifier for LiDAR sensor receiver 被引量:1
8
作者 LIU Ruqing ZHU Jingguo +3 位作者 JIANG Yan LI Feng JIANG Chenghao MENG Zhe 《Journal of Systems Engineering and Electronics》 SCIE EI CSCD 2024年第1期74-80,共7页
For time-of-flight(TOF)light detection and ranging(LiDAR),a three-channel high-performance transimpedance amplifier(TIA)with high immunity to input load capacitance is presented.A regulated cascade(RGC)as the input st... For time-of-flight(TOF)light detection and ranging(LiDAR),a three-channel high-performance transimpedance amplifier(TIA)with high immunity to input load capacitance is presented.A regulated cascade(RGC)as the input stage is at the core of the complementary metal oxide semiconductor(CMOS)circuit chip,giving it more immunity to input photodiode detectors.A simple smart output interface acting as a feedback structure,which is rarely found in other designs,reduces the chip size and power consumption simultaneously.The circuit is designed using a 0.5μm CMOS process technology to achieve low cost.The device delivers a 33.87 dB?transimpedance gain at 350 MHz.With a higher input load capacitance,it shows a-3 dB bandwidth of 461 MHz,indicating a better detector tolerance at the front end of the system.Under a 3.3 V supply voltage,the device consumes 5.2 mW,and the total chip area with three channels is 402.8×597.0μm2(including the test pads). 展开更多
关键词 transimpedance amplifier(TIA) three-channel regulated cascade(RGC) light detection and ranging(LiDAR)
在线阅读 下载PDF
Design Technologies for Silicon-Based High-Efficiency RF Power Amplifiers:A Brief Overview 被引量:1
9
作者 Ruili Wu Jerry Lopez +1 位作者 Yan Li Donald Y.C.Lie 《ZTE Communications》 2011年第3期28-35,共8页
This paper presents a brief overview of several promising design technologies for high efficiency silicon-based radio frequency (RF) power amplifiers (PAs) as well as the use of these technologies in mobile broadb... This paper presents a brief overview of several promising design technologies for high efficiency silicon-based radio frequency (RF) power amplifiers (PAs) as well as the use of these technologies in mobile broadband wireless communications. Four important aspects of PA design are addressed in this paper. First, we look at class-E PA design equations and provide an example of a class-E PA that achieves efficiency of 65-70% at 2.4 GHz. Then, we discuss state-of-the-art envelope tracking (ET) design for monolithic wideband RF mobile transmitter applications. A brief overview of Doherty PA design for the next-generation wireless handset applications is then given. Towards the end of the paper, we discuss an inherently broadband and highly efficient class-J PA design targeting future multi-band multi-standard wireless communication protocols. 展开更多
关键词 radio frequency power amplifier silicon-based power amplifier envelope tracking class-E amplifier broadband PA class-J Doherty power amplifier
在线阅读 下载PDF
Broadband Dual-Input Doherty Power Amplifier Design Based on a Simple Adaptive Power Dividing Ratio Function
10
作者 Dai Zhijiang Zhong Kang +2 位作者 Li Mingyu Pang Jingzhou Jin Yi 《China Communications》 SCIE CSCD 2024年第5期97-112,共16页
In this paper,a simple adaptive power dividing function for the design of a dual-input Doherty power amplifier(DPA)is presented.In the presented approaches,the signal separation function(SSF)at different frequency poi... In this paper,a simple adaptive power dividing function for the design of a dual-input Doherty power amplifier(DPA)is presented.In the presented approaches,the signal separation function(SSF)at different frequency points can be characterized by a polynomial.And in the practical test,the coefficients of SSF can be determined by measuring a small number of data points of input power.Same as other dualinput DPAs,the proposed approach can also achieve high output power and back-off efficiency in a broadband operation band by adjusting the power distribution ratio flexibly.Finally,a 1.5-2.5 GHz highefficiency dual-input Doherty power amplifier is implemented according to this approach.The test results show that the peak power is 48.6-49.7d Bm,and the 6-d B back-off efficiency is 51.0-67.0%,and the saturation efficiency is 52.4-74.6%.The digital predistortion correction is carried out at the frequency points of 1.8/2.1GHz,and the adjacent channel power ratio is lower than-54.5d Bc.Simulation and experiment results can verify the effectiveness and correctness of the proposed method. 展开更多
关键词 BROADBAND doherty power amplifier dualinput efficiency enhancement load modulation
在线阅读 下载PDF
A Hybrid Integrated and Low-Cost Multi-Chip Broadband Doherty Power Amplifier Module for 5G Massive MIMO Application
11
作者 Fei Huang Guansheng Lv +2 位作者 Huibo Wu Wenhua Chen Zhenghe Feng 《Engineering》 SCIE EI CAS CSCD 2024年第7期223-232,共10页
In this paper,a hybrid integrated broadband Doherty power amplifier(DPA)based on a multi-chip module(MCM),whose active devices are fabricated using the gallium nitride(GaN)process and whose passive circuits are fabric... In this paper,a hybrid integrated broadband Doherty power amplifier(DPA)based on a multi-chip module(MCM),whose active devices are fabricated using the gallium nitride(GaN)process and whose passive circuits are fabricated using the gallium arsenide(GaAs)integrated passive device(IPD)process,is proposed for 5G massive multiple-input multiple-output(MIMO)application.An inverted DPA structure with a low-Q output network is proposed to achieve better bandwidth performance,and a single-driver architecture is adopted for a chip with high gain and small area.The proposed DPA has a bandwidth of 4.4-5.0 GHz that can achieve a saturation of more than 45.0 dBm.The gain compression from 37 dBm to saturation power is less than 4 dB,and the average power-added efficiency(PAE)is 36.3%with an 8.5 dB peak-to-average power ratio(PAPR)in 4.5-5.0 GHz.The measured adjacent channel power ratio(ACPR)is better than50 dBc after digital predistortion(DPD),exhibiting satisfactory linearity. 展开更多
关键词 5G Doherty power amplifier Multi-input multi-output Multi-chip modules Hybrid integrated
在线阅读 下载PDF
Harmonic balance simulation of the influence of component uniformity and reliability on the performance of a Josephson traveling wave parametric amplifier
12
作者 郑煜臻 熊康林 +1 位作者 冯加贵 杨辉 《Chinese Physics B》 SCIE EI CAS CSCD 2024年第4期339-343,共5页
A Josephson traveling wave parametric amplifier(JTWPA),which is a quantum-limited amplifier with high gain and large bandwidth,is the core device of large-scale measurement and control systems for quantum computing.A ... A Josephson traveling wave parametric amplifier(JTWPA),which is a quantum-limited amplifier with high gain and large bandwidth,is the core device of large-scale measurement and control systems for quantum computing.A typical JTWPA consists of thousands of Josephson junctions connected in series to form a transmission line and hundreds of shunt LC resonators periodically loaded along the line for phase matching.Because the variation of these capacitors and inductors can be detrimental to their high-frequency characteristics,the fabrication of a JTWPA typically necessitates precise processing equipment.To guide the fabrication process and further improve the design for manufacturability,it is necessary to understand how each electronic component affects the amplifier.In this paper,we use the harmonic balance method to conduct a comprehensive study on the impact of nonuniformity and fabrication yield of the electronic components on the performance of a JTWPA.The results provide insightful and scientific guidance for device design and fabrication processes. 展开更多
关键词 Josephson traveling wave parametric amplifier(JTWPA) harmonic balance method YIELDS UNIFORMITY
原文传递
High-Power Raman Soliton Generation at 1.7 μm in All-Fiber Polarization-Maintaining Erbium-Doped Amplifier
13
作者 徐子鹏 王萱 +2 位作者 姚传飞 杨林京 李平雪 《Chinese Physics Letters》 SCIE EI CAS CSCD 2024年第5期35-39,共5页
An all-fiber polarization maintaining high-power laser system operating at 1.7 μm based on the Ramaninduced soliton self-frequency shifting effect is demonstrated. The entirely fiberized system is built by erbiumdope... An all-fiber polarization maintaining high-power laser system operating at 1.7 μm based on the Ramaninduced soliton self-frequency shifting effect is demonstrated. The entirely fiberized system is built by erbiumdoped oscillator and two-stage amplifiers with polarization maintaining commercial silica fibers and devices, which can provide robust and stable soliton generation. High-power soliton laser with the average power of 0.28 W,the repetition rate of 42.7 MHz, and pulse duration of 515 fs is generated directly from the main amplifier.Our experiment provides a feasible method for high-power all-fiber polarization maintaining femtosecond laser generation working at 1.7 μm. 展开更多
关键词 polarization fiber amplifier
原文传递
Channel estimation in integrated radar and communication systems with power amplifier distortion
14
作者 LIU Yan YI Jianxin +2 位作者 WAN Xianrong RAO Yunhua HAO Caiyong 《Journal of Systems Engineering and Electronics》 SCIE CSCD 2024年第5期1098-1108,共11页
To reduce the negative impact of the power amplifier(PA)nonlinear distortion caused by the orthogonal frequency division multiplexing(OFDM)waveform with high peak-to-average power ratio(PAPR)in integrated radar and co... To reduce the negative impact of the power amplifier(PA)nonlinear distortion caused by the orthogonal frequency division multiplexing(OFDM)waveform with high peak-to-average power ratio(PAPR)in integrated radar and communication(RadCom)systems is studied,the channel estimation in passive sensing scenarios.Adaptive channel estimation methods are proposed based on different pilot patterns,considering nonlinear distortion and channel sparsity.The proposed methods achieve sparse channel results by manipulating the least squares(LS)frequency-domain channel estimation results to preserve the most significant taps.The decision-aided method is used to optimize the sparse channel results to reduce the effect of nonlinear distortion.Numerical results show that the channel estimation performance of the proposed methods is better than that of the conventional methods under different pilot patterns.In addition,the bit error rate performance in communication and passive radar detection performance show that the proposed methods have good comprehensive performance. 展开更多
关键词 channel estimation integrated radar and communication(RadCom) passive sensing nonlinear distortion power amplifier(PA) pilot pattern
在线阅读 下载PDF
Er^(3+)-Yb^(3+)-Tm^(3+)tri-doped La_(2)O_(3)-Al_(2)O_(3) glasses for low-power-consumption ultrawideband on-chip optical waveguide amplifiers
15
作者 Zhengkai Li Mingjie Zhang +6 位作者 Yuanzhi Chen Junchang Lu Zhanbo Wen Banghu Wei Mengyi Wang Jiayue Xu Qingli Zhang 《Advanced Photonics Nexus》 2024年第6期117-126,共10页
In the field of short-range optical interconnects,the development of low-power-consumption,ultrawideband on-chip optical waveguide amplifiers is of critical importance.Central to this advancement is the creation of ho... In the field of short-range optical interconnects,the development of low-power-consumption,ultrawideband on-chip optical waveguide amplifiers is of critical importance.Central to this advancement is the creation of host materials that require low pump power and provide ultrabroadband emission capabilities.We introduce a tri-doped lanthanum aluminate glass(composition:5Er_(2)O_(3)-5Yb_(2)O_(3)-0.2Tm_(2)O_(3)-43.8La_(2)O_(3)-46Al_(2)O_(3)),which exhibits exceptional near-infrared(NIR)luminescence intensity,significantly outperforming other bands by 3 orders of magnitude.This glass can achieve an ultrawideband NIR gain spanning 478 nm,from 1510 to 1988 nm.Notably,the glass achieves positive optical gain with a low population inversion threshold(P>0.2),highlighting its efficiency and low-power consumption.The high glass transition temperature(Tg∼842°C)and large temperature difference(ΔT∼120°C)between Tg and the onset of crystallization(Tx)indicate excellent thermal stability,which is crucial for producing high-quality amorphous films for on-chip amplifiers.This research examines the unique energy levels and spectral properties of the Er^(3+)-Yb^(3+)-Tm^(3+) tri-doped glass,assessing its potential for use in ultrawideband on-chip optical waveguide amplifiers.This work lays the groundwork for low-power,ultrabroadband on-chip waveguide amplifiers,offering new avenues for short-range optical interconnect systems. 展开更多
关键词 optical waveguide amplifier low-power-consumption ULTRAWIDEBAND host material
在线阅读 下载PDF
Theory of noise in a kilo-Hz cascaded high-energy Yb-doped nanosecond pulsed fiber amplifier
16
作者 刘明 张海涛 +5 位作者 巩马理 赵跃进 程文雍 孟阔 郑超 陈倚竹 《Chinese Physics B》 SCIE EI CAS CSCD 2014年第4期335-341,共7页
A theoretical analysis of noise in a high-power cascaded fiber amplifier is presented. Unlike the noise theory in low power communication, the noise of a high power system is redefined as the leaked output energy betw... A theoretical analysis of noise in a high-power cascaded fiber amplifier is presented. Unlike the noise theory in low power communication, the noise of a high power system is redefined as the leaked output energy between pulses with coherent beat noise uncounted. This definition is more appropriate for high power usage in which the pulse energy receives more attention than the pulse shape integrity. Then the low power pre-amplifying stages are considered as linear amplification and analyzed by linear theory. In the high-power amplification stages, the inversion is assumed to recover linearly in the time interval between pulses. The time shape of the output pulse is different from that of the input signal because of different gains at the front and back ends of the pulse. Then, a criterion is provided to distinguish the nonlinear and linear amplifications based on the signal-to-noise ratio (SNR) analysis. Then, an experiment that shows that the output SNR actually drops off in nonlinear amplification is performed. The change in the noise factor can be well evaluated by pulse shape distortion. 展开更多
关键词 pulsed fiber amplifier signal-to-noise ratio cascaded amplifier master oscillator power amplifier
原文传递
Step memory polynomial predistorter for power amplifiers with memory 被引量:3
17
作者 于翠屏 刘元安 +1 位作者 黎淑兰 南敬昌 《Journal of Southeast University(English Edition)》 EI CAS 2009年第3期303-308,共6页
To reduce the number of digital predistortion coefficients, a step memory polynomial (SMP)predistorter is presented. The number of predistortion coefficients is decreased by adjusting the maximum nonlinear order for... To reduce the number of digital predistortion coefficients, a step memory polynomial (SMP)predistorter is presented. The number of predistortion coefficients is decreased by adjusting the maximum nonlinear order for different memory orders in the traditional memory polynomial (MP)predistorter. The proposed SNIP predistorter is identified by an offline learning structure on which the coefficients can be extracted directly from the sampled input and output of a PA. Simulation results show that the SMP predistorter is not tied to a particular PA model and is, therefore, robust. The effectiveness of the SMP predistorter is demonstrated by simulations and experiments on an MP model, a parallel Wiener model, a Wiener-Hammerstein model, a sparsedelay memory polynomial model and a real PA which is fabricated based on the Freescale LDMOSFET MRF21030. Compared with the traditional MP predistorter, the SMP predistorter can reduce the number of coefficients by 60%. 展开更多
关键词 power amplifier PREDISTORTION memory effects memory polynomial
在线阅读 下载PDF
All-Optical Sampling Using Nonlinear Polarization Rotation in a Single Semiconductor Optical Amplifier 被引量:2
18
作者 张尚剑 张谦述 +2 位作者 李和平 刘永智 刘永 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2008年第6期1031-1035,共5页
We propose a novel all-optical sampling method using nonlinear polarization rotation in a semiconductor optical amplifier. A rate-equation model capable of describing the all-optical sampling mechanism is presented in... We propose a novel all-optical sampling method using nonlinear polarization rotation in a semiconductor optical amplifier. A rate-equation model capable of describing the all-optical sampling mechanism is presented in this paper. Based on this model, we investigate the optimized operating parameters of the proposed system by simulating the output intensity of the probe light as functions of the input polarization angle, the phase induced by the polarization controller, and the ori- entation of the polarization beam splitter. The simulated results show that we can obtain a good linear slope and a large linear dynamic range,which is suitable for all-optical sampling. The operating power of the pump light can be less than lmW. The presented all-optical sampling method can potentially operate at a sampling rate up to hundreds GS/s and needs low optical power. 展开更多
关键词 optical signal processing all-optical sampling semiconductor optical amplifier nonlinear polarization rotation
在线阅读 下载PDF
Single Event Transients of Operational Amplifier and Optocoupler 被引量:2
19
作者 封国强 马英起 +2 位作者 韩建伟 张振龙 黄建国 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2008年第9期1729-1733,共5页
The single event transient effects of the operational amplifier LM124J and the optocoupler HCPL 5231 are investigated by a pulsed laser test facility. The relation of transient pulse shape to pulsed laser equivalent L... The single event transient effects of the operational amplifier LM124J and the optocoupler HCPL 5231 are investigated by a pulsed laser test facility. The relation of transient pulse shape to pulsed laser equivalent LET is tested,the sensitive areas of the SET effects are identified in voltage follower application mode of LM124J, and the mechanism is initially analyzed. The transient amplitude and duration of HCPL5231 at various equivalent LET are examined,and the SET cross-section is measured. The results of our test and heavy ion experimental data coincide closely,indicating that a pulsed laser test facility is a valid tool for single event effect evaluation. 展开更多
关键词 pulsed lasers single event transient operational amplifier OPTOCOUPLER
在线阅读 下载PDF
A 12 Gbit/s limiting amplifier using 2 GaAs HBT technology for fiber-optic transmission system 被引量:1
20
作者 刘欢艳 王志功 +2 位作者 王蓉 冯军 熊明珍 《Journal of Southeast University(English Edition)》 EI CAS 2003年第1期5-7,共3页
A 12 Gbit/s limiting amplifier for fiber-optic transmission system is realized in a 2μm GaAs HBT technology. The whole circuit consists of an input buffer, three similar amplifier cells, an output buffer for driving ... A 12 Gbit/s limiting amplifier for fiber-optic transmission system is realized in a 2μm GaAs HBT technology. The whole circuit consists of an input buffer, three similar amplifier cells, an output buffer for driving 50 ft transmission lines and a pair of feedback networks for offset cancellation. At a positive supply voltage of 2 V and a negative supply voltage of - 2V, the power dissipation is about 280 mW. The small-signal gain is higher than 46 dB and the input dynamic range is about 40 dB with a constant single-ended output voltage swing of 400 mV. Satisfactory eye-diagrams are obtained at the bit rate of 12 Gbit/s limited by the test set-up. The chip area is 1.15 mm ×0.7 mm. 展开更多
关键词 optical receiver limiting amplifier GaAs HBT technology
在线阅读 下载PDF
上一页 1 2 72 下一页 到第
使用帮助 返回顶部