Phosphor-in-glass(PiG)films have emerged as the preferred conversion materials for high-brightness laser-driven lighting due to their excellent thermal conductivity and superior optical performance.Screen printing tec...Phosphor-in-glass(PiG)films have emerged as the preferred conversion materials for high-brightness laser-driven lighting due to their excellent thermal conductivity and superior optical performance.Screen printing technology was employed to investigate the correlation between the reflective layer thickness and light conversion efficiency.A multilayer-structured Y_(3)Al_(3.5)Ga_(1.5)O_(12):Ce^(3+)(YAGG:Ce)-PiGTiO_(2)-aluminium nitride(AIN)film(YG-TAF)converter was constructed by efficiently coupling the optimal thickness of the reflective layer with the PiG layer and the AIN substrate.Notably,the YG-TAF shows an impressive thermal conductivity of 22.6 W/(m·K)and a maximum anti-laser power of 15.84 W,demonstrating superb thermal regulation capability.This anti-laser power of 15.84 W represents a breakthrough in current static laser performance research.Impressively,an YG-TAF phosphor color wheel was designed,which achieves an ultra-high-brightness 4375 lm of green light under 450 nm,88 W laser power excitation,close to that of commercial phosphor silicone color wheels.This advancement not only demonstrates the excellent performance of YG-TAF in high-brightness dynamic reflective laser applications but also indicates its strong feasibility for practical implementation.Furthermore,the developed YAGG:Ce-Y_(1.31)Ce_(0.09)Gd_(1.6)Al_5O_(12)-TAF spliced phosphor color wheel successfully mitigates the influence of photon reabsorption and achieves a color rendering index of 80.5,showing great potential for advancement of the field of reflective white light laser illumination.展开更多
In recent years,the development of solid-state lighting devices has increasingly shifted towards high-power laser illumination,making it imperative to develop fluorescent conversion materials with exceptional thermal ...In recent years,the development of solid-state lighting devices has increasingly shifted towards high-power laser illumination,making it imperative to develop fluorescent conversion materials with exceptional thermal stability and luminous quality.In this study,we introduced a highly reflective TiO_(2) substrate in combination with a high thermal conductivity AlN substrate to design a Ce:YAG-PiG-TiO_(2)-AlN Film(Ce:YAG PTAF)color converter with outstanding photothermal performance.Remarkably,the thermal conductivity of this material reaches 48.28 W m^(-1) K^(-1).Notably,the optimized PTAF can withstand a high-power output of up to 12.14 W in a static environment,with a maximum luminous flux(LFmax)of 2284.6 lm and maximum luminous efficacy(LEmax)of 222.35 lm W^(-1),showcasing its excellent optical properties.Furthermore,the fabricated Ce:YAG-PiG-TiO_(2)-AlN-Wheel(Ce:YAG PTAW),equipped with a motor operating at 7200 r/min,emits an extraordinary brightness of 4404 lm under 88 W of ultra-high laser irradiation,with stability surpassing that of commercial silicone color wheels,thanks to its superior Li_(2)O-Al_(2)O_(3)-SiO_(2)(LAS)glass system.Interestingly,we designed an innovative spatially separated two-color segmented wheel structure,effectively mitigating the photon reabsorption phenomenon caused by the overlap of the fluorescent powder absorption peaks.When the ratio of Ce:YAG to Ce:GdYAG is 240:120,it yields white light with a color rendering index(CRI)of 80.2,and luminous flux remaining at 3317.8 lm.When encapsulated in a reflective module,it accurately reflects the true color states of objects.These results collectively indicate that both Ce:YAG PTAF and PTAW possess significant application potential in the realm of high-power laser illumination.展开更多
Unintentionally doped AlGaN thin films are grown on c-plane(0001) sapphire substrate by metal-organic chemical vapor deposition, and low-temperature AlN is deposited onto sapphire substrate used as a bu?er layer. AlGa...Unintentionally doped AlGaN thin films are grown on c-plane(0001) sapphire substrate by metal-organic chemical vapor deposition, and low-temperature AlN is deposited onto sapphire substrate used as a bu?er layer. AlGaN metal-semiconductor-metal ultraviolet photodetectors with Ni/Au interdigitated contact electrodes are then fabricated by lift-off technology. The dark current of the AlGaN photodetectors is 5.61×10-9 A at 2-V applied bias and the peak response occurrs at 294 nm.展开更多
基金Project supported by the National Natural Science Foundation of China(1237040868)。
文摘Phosphor-in-glass(PiG)films have emerged as the preferred conversion materials for high-brightness laser-driven lighting due to their excellent thermal conductivity and superior optical performance.Screen printing technology was employed to investigate the correlation between the reflective layer thickness and light conversion efficiency.A multilayer-structured Y_(3)Al_(3.5)Ga_(1.5)O_(12):Ce^(3+)(YAGG:Ce)-PiGTiO_(2)-aluminium nitride(AIN)film(YG-TAF)converter was constructed by efficiently coupling the optimal thickness of the reflective layer with the PiG layer and the AIN substrate.Notably,the YG-TAF shows an impressive thermal conductivity of 22.6 W/(m·K)and a maximum anti-laser power of 15.84 W,demonstrating superb thermal regulation capability.This anti-laser power of 15.84 W represents a breakthrough in current static laser performance research.Impressively,an YG-TAF phosphor color wheel was designed,which achieves an ultra-high-brightness 4375 lm of green light under 450 nm,88 W laser power excitation,close to that of commercial phosphor silicone color wheels.This advancement not only demonstrates the excellent performance of YG-TAF in high-brightness dynamic reflective laser applications but also indicates its strong feasibility for practical implementation.Furthermore,the developed YAGG:Ce-Y_(1.31)Ce_(0.09)Gd_(1.6)Al_5O_(12)-TAF spliced phosphor color wheel successfully mitigates the influence of photon reabsorption and achieves a color rendering index of 80.5,showing great potential for advancement of the field of reflective white light laser illumination.
基金financially supported by the National Natural Science Foundation of China(No.1237040868).
文摘In recent years,the development of solid-state lighting devices has increasingly shifted towards high-power laser illumination,making it imperative to develop fluorescent conversion materials with exceptional thermal stability and luminous quality.In this study,we introduced a highly reflective TiO_(2) substrate in combination with a high thermal conductivity AlN substrate to design a Ce:YAG-PiG-TiO_(2)-AlN Film(Ce:YAG PTAF)color converter with outstanding photothermal performance.Remarkably,the thermal conductivity of this material reaches 48.28 W m^(-1) K^(-1).Notably,the optimized PTAF can withstand a high-power output of up to 12.14 W in a static environment,with a maximum luminous flux(LFmax)of 2284.6 lm and maximum luminous efficacy(LEmax)of 222.35 lm W^(-1),showcasing its excellent optical properties.Furthermore,the fabricated Ce:YAG-PiG-TiO_(2)-AlN-Wheel(Ce:YAG PTAW),equipped with a motor operating at 7200 r/min,emits an extraordinary brightness of 4404 lm under 88 W of ultra-high laser irradiation,with stability surpassing that of commercial silicone color wheels,thanks to its superior Li_(2)O-Al_(2)O_(3)-SiO_(2)(LAS)glass system.Interestingly,we designed an innovative spatially separated two-color segmented wheel structure,effectively mitigating the photon reabsorption phenomenon caused by the overlap of the fluorescent powder absorption peaks.When the ratio of Ce:YAG to Ce:GdYAG is 240:120,it yields white light with a color rendering index(CRI)of 80.2,and luminous flux remaining at 3317.8 lm.When encapsulated in a reflective module,it accurately reflects the true color states of objects.These results collectively indicate that both Ce:YAG PTAF and PTAW possess significant application potential in the realm of high-power laser illumination.
基金supported by the National Natural Science Foundation of China(No.61006052)the Fundamental Research Funds for the Central Universities(No.K5051325009)
文摘Unintentionally doped AlGaN thin films are grown on c-plane(0001) sapphire substrate by metal-organic chemical vapor deposition, and low-temperature AlN is deposited onto sapphire substrate used as a bu?er layer. AlGaN metal-semiconductor-metal ultraviolet photodetectors with Ni/Au interdigitated contact electrodes are then fabricated by lift-off technology. The dark current of the AlGaN photodetectors is 5.61×10-9 A at 2-V applied bias and the peak response occurrs at 294 nm.
