240 nm AlGaN-based micro-LEDs with different sizes are designed and fabricated.Then,the external quantum efficiency(EQE)and light extraction efficiency(LEE)are systematically investigated by comparing size and edge ef...240 nm AlGaN-based micro-LEDs with different sizes are designed and fabricated.Then,the external quantum efficiency(EQE)and light extraction efficiency(LEE)are systematically investigated by comparing size and edge effects.Here,it is revealed that the peak optical output power increases by 81.83%with the size shrinking from 50.0 to 25.0μm.Thereinto,the LEE increases by 26.21%and the LEE enhancement mainly comes from the sidewall light extraction.Most notably,transversemagnetic(TM)mode light intensifies faster as the size shrinks due to the tilted mesa side-wall and Al reflector design.However,when it turns to 12.5μm sized micro-LEDs,the output power is lower than 25.0μm sized ones.The underlying mechanism is that even though protected by SiO2 passivation,the edge effect which leads to current leakage and Shockley-Read-Hall(SRH)recombination deteriorates rapidly with the size further shrinking.Moreover,the ratio of the p-contact area to mesa area is much lower,which deteriorates the p-type current spreading at the mesa edge.These findings show a role of thumb for the design of high efficiency micro-LEDs with wavelength below 250 nm,which will pave the way for wide applications of deep ultraviolet(DUV)micro-LEDs.展开更多
Super-fine electrohydrodynamic inkjet(SIJ)printing of perovskite nanocrystal(PNC)colloid ink exhibits significant potential in the fabrication of high-resolution color conversion microstructures arrays for fullcolor m...Super-fine electrohydrodynamic inkjet(SIJ)printing of perovskite nanocrystal(PNC)colloid ink exhibits significant potential in the fabrication of high-resolution color conversion microstructures arrays for fullcolor micro-LED displays.However,the impact of solvent on both the printing process and the morphology of SIJ-printed PNC color conversion microstructures remains underexplored.In this study,we prepared samples of CsPbBr3PNC colloid inks in various solvents and investigated the solvent's impact on SIJ printed PNC microstructures.Our findings reveal that the boiling point of the solvent is crucial to the SIJ printing process of PNC colloid inks.Only does the boiling point of the solvent fall in the optimal range,the regular positioned,micron-scaled,conical PNC microstructures can be successfully printed.Below this optimal range,the ink is unable to be ejected from the nozzle;while above this range,irregular positioned microstructures with nanoscale height and coffee-ring-like morphology are produced.Based on these observations,high-resolution color conversion PNC microstructures were effectively prepared using SIJ printing of PNC colloid ink dispersed in dimethylbenzene solvent.展开更多
AlGaN-based deep-ultraviolet(DUV)laser diodes(LDs)face performance challenges due to elec-tron leakage and poor hole injection which is often worsened by polarization effects from conventional elec-tron blocking layer...AlGaN-based deep-ultraviolet(DUV)laser diodes(LDs)face performance challenges due to elec-tron leakage and poor hole injection which is often worsened by polarization effects from conventional elec-tron blocking layers(EBLs).To overcome these limitations,we propose an EBL-free DUV LD design incor-porating a 1-nm undoped Al_(0.8)Ga_(0.2)N thin strip layer after the last quantum barrier.Using PICS3D simula-tions,we evaluate the optical and electrical characteristics.Results show a significant increase in effective electron barrier height(from 158.2 meV to 420.7 meV)and a reduction in hole barrier height(from 149.2 meV to 62.8 meV),which enhance hole injection and reduce electron leakage.The optimized structure(LD3)achieves a 14%increase in output power,improved slope efficiency(1.85 W/A),and lower threshold current.This design also reduces the quantum confined Stark effect and forms dual hole accumulation regions,im-proving recombination efficiency.展开更多
基金This work was supported by National Key R&D Program of China(2022YFB3605103)the National Natural Science Foundation of China(62204241,U22A2084,62121005,and 61827813)+3 种基金the Natural Science Foundation of Jilin Province(20230101345JC,20230101360JC,and 20230101107JC)the Youth Innovation Promotion Association of CAS(2023223)the Young Elite Scientist Sponsorship Program By CAST(YESS20200182)the CAS Talents Program(E30122E4M0).
文摘240 nm AlGaN-based micro-LEDs with different sizes are designed and fabricated.Then,the external quantum efficiency(EQE)and light extraction efficiency(LEE)are systematically investigated by comparing size and edge effects.Here,it is revealed that the peak optical output power increases by 81.83%with the size shrinking from 50.0 to 25.0μm.Thereinto,the LEE increases by 26.21%and the LEE enhancement mainly comes from the sidewall light extraction.Most notably,transversemagnetic(TM)mode light intensifies faster as the size shrinks due to the tilted mesa side-wall and Al reflector design.However,when it turns to 12.5μm sized micro-LEDs,the output power is lower than 25.0μm sized ones.The underlying mechanism is that even though protected by SiO2 passivation,the edge effect which leads to current leakage and Shockley-Read-Hall(SRH)recombination deteriorates rapidly with the size further shrinking.Moreover,the ratio of the p-contact area to mesa area is much lower,which deteriorates the p-type current spreading at the mesa edge.These findings show a role of thumb for the design of high efficiency micro-LEDs with wavelength below 250 nm,which will pave the way for wide applications of deep ultraviolet(DUV)micro-LEDs.
基金supported by the National Natural Science Foundation of China(No.62374142)Fundamental Research Funds for the Central Universities(Nos.20720220085 and 20720240064)+2 种基金External Cooperation Program of Fujian(No.2022I0004)Major Science and Technology Project of Xiamen in China(No.3502Z20191015)Xiamen Natural Science Foundation Youth Project(No.3502Z202471002)。
文摘Super-fine electrohydrodynamic inkjet(SIJ)printing of perovskite nanocrystal(PNC)colloid ink exhibits significant potential in the fabrication of high-resolution color conversion microstructures arrays for fullcolor micro-LED displays.However,the impact of solvent on both the printing process and the morphology of SIJ-printed PNC color conversion microstructures remains underexplored.In this study,we prepared samples of CsPbBr3PNC colloid inks in various solvents and investigated the solvent's impact on SIJ printed PNC microstructures.Our findings reveal that the boiling point of the solvent is crucial to the SIJ printing process of PNC colloid inks.Only does the boiling point of the solvent fall in the optimal range,the regular positioned,micron-scaled,conical PNC microstructures can be successfully printed.Below this optimal range,the ink is unable to be ejected from the nozzle;while above this range,irregular positioned microstructures with nanoscale height and coffee-ring-like morphology are produced.Based on these observations,high-resolution color conversion PNC microstructures were effectively prepared using SIJ printing of PNC colloid ink dispersed in dimethylbenzene solvent.
文摘AlGaN-based deep-ultraviolet(DUV)laser diodes(LDs)face performance challenges due to elec-tron leakage and poor hole injection which is often worsened by polarization effects from conventional elec-tron blocking layers(EBLs).To overcome these limitations,we propose an EBL-free DUV LD design incor-porating a 1-nm undoped Al_(0.8)Ga_(0.2)N thin strip layer after the last quantum barrier.Using PICS3D simula-tions,we evaluate the optical and electrical characteristics.Results show a significant increase in effective electron barrier height(from 158.2 meV to 420.7 meV)and a reduction in hole barrier height(from 149.2 meV to 62.8 meV),which enhance hole injection and reduce electron leakage.The optimized structure(LD3)achieves a 14%increase in output power,improved slope efficiency(1.85 W/A),and lower threshold current.This design also reduces the quantum confined Stark effect and forms dual hole accumulation regions,im-proving recombination efficiency.
