AlGaInP-based red miniaturized light-emitting diode(mini-LED)is a key component in realizing a full-color display.One of the main obstacles originates from interfacial recombination at the AlGaInP-SiO_(2)interface,and...AlGaInP-based red miniaturized light-emitting diode(mini-LED)is a key component in realizing a full-color display.One of the main obstacles originates from interfacial recombination at the AlGaInP-SiO_(2)interface,and it is crucial to develop effective surface passivation strategies to achieve higher external quantum efficiency(EQE)in AlGaInP-based red mini-LEDs.Here,we demonstrated AlGaInP-based red flip-chip mini-LEDs with an AlN passivation layer via atomic layer deposition(ALD).Utilizing a Monte Carlo ray tracing method,we investigated the effects of the SiO_(2)passivation layer and the Al N passivation layer on the optical performances of mini-LEDs.Since the refractive index of AlN is between AlGaInP and SiO_(2),the total internal reflection is alleviated and light extraction is enhanced.Unexpectedly,the AlN passivation layer also contributes to improving the current spreading ability of mini-LEDs,which is demonstrated by the near-field light distribution.Benefiting from superior light extraction and improved current spreading,the EQE of the mini-LED with an AlN passivation layer realizes an increment of 16.1%at 5 mA,in comparison to the mini-LED with a SiO_(2)passivation layer.The EQE of miniLEDs with an AlN passivation layer reaches a competitive value of 22.3%at 5 mA,surpassing previously reported AlGaInPbased red mini-LEDs.Moreover,the high temperature-humidity aging test exhibits that the AlN passivation layer effectively enhances the reliability of mini-LEDs.This work provides guidance for high-performance AlGaInP-based red flip-chip miniLEDs design and manufacture.展开更多
基金supported by the Wuhan Joint Innovation Laboratory of Advanced Display Industry(Grant No.2024010902040449)the National Natural Science Foundation of China(Grant Nos.52075394,52475601)+4 种基金the National Key Research and Development Program of China(Grant Nos.2022YFB3603603,2021YFB3600204)the National Youth Talent Support Program,the Key Research and Development Program of Hubei Province(Grant No.2023BAB137)the Knowledge Innovation Program of Wuhan-Basic Research(Grant No.2023010201010068)the Science and Technology Major Project of Hubei Province(Grant No.2024BAA004)the Science and Technology Major Project of Wuhan(Grant No.2024010702020024)。
文摘AlGaInP-based red miniaturized light-emitting diode(mini-LED)is a key component in realizing a full-color display.One of the main obstacles originates from interfacial recombination at the AlGaInP-SiO_(2)interface,and it is crucial to develop effective surface passivation strategies to achieve higher external quantum efficiency(EQE)in AlGaInP-based red mini-LEDs.Here,we demonstrated AlGaInP-based red flip-chip mini-LEDs with an AlN passivation layer via atomic layer deposition(ALD).Utilizing a Monte Carlo ray tracing method,we investigated the effects of the SiO_(2)passivation layer and the Al N passivation layer on the optical performances of mini-LEDs.Since the refractive index of AlN is between AlGaInP and SiO_(2),the total internal reflection is alleviated and light extraction is enhanced.Unexpectedly,the AlN passivation layer also contributes to improving the current spreading ability of mini-LEDs,which is demonstrated by the near-field light distribution.Benefiting from superior light extraction and improved current spreading,the EQE of the mini-LED with an AlN passivation layer realizes an increment of 16.1%at 5 mA,in comparison to the mini-LED with a SiO_(2)passivation layer.The EQE of miniLEDs with an AlN passivation layer reaches a competitive value of 22.3%at 5 mA,surpassing previously reported AlGaInPbased red mini-LEDs.Moreover,the high temperature-humidity aging test exhibits that the AlN passivation layer effectively enhances the reliability of mini-LEDs.This work provides guidance for high-performance AlGaInP-based red flip-chip miniLEDs design and manufacture.
