The n type GaAs substrates are used and their conductive type is changed to p type by tunnel junction for AlGaInP light emitting diodes(TJ LED),then n type GaP layer is used as current spreading layer.Because resi...The n type GaAs substrates are used and their conductive type is changed to p type by tunnel junction for AlGaInP light emitting diodes(TJ LED),then n type GaP layer is used as current spreading layer.Because resistivity of the n type GaP is lower than that of p type,the effect of current spreading layer is enhanced and the light extraction efficiency is increased by the n type GaP current spreading layer.For TJ LED with 3μm n type GaP current spreading layer,experimental results show that compared with conventional LED with p type GaP current spreading layer,light output power is increased for 50% at 20mA and for 66 7% at 100mA.展开更多
文摘The n type GaAs substrates are used and their conductive type is changed to p type by tunnel junction for AlGaInP light emitting diodes(TJ LED),then n type GaP layer is used as current spreading layer.Because resistivity of the n type GaP is lower than that of p type,the effect of current spreading layer is enhanced and the light extraction efficiency is increased by the n type GaP current spreading layer.For TJ LED with 3μm n type GaP current spreading layer,experimental results show that compared with conventional LED with p type GaP current spreading layer,light output power is increased for 50% at 20mA and for 66 7% at 100mA.
