基于半导体量子阱激光器的基本理论 ,设计了合理的 1 .3 μm无致冷 Al Ga In As/ In P应变补偿量子阱激光器结构 ,通过低压金属有机化学气相外延 ( LP-MOVPE)工艺在国内首次生长出了高质量的 Al Ga In As/ In P应变补偿量子阱结构材料 ...基于半导体量子阱激光器的基本理论 ,设计了合理的 1 .3 μm无致冷 Al Ga In As/ In P应变补偿量子阱激光器结构 ,通过低压金属有机化学气相外延 ( LP-MOVPE)工艺在国内首次生长出了高质量的 Al Ga In As/ In P应变补偿量子阱结构材料 ,用此材料制作的器件指标为激射波长 :1 2 80 nm≤λ≤ 1 3 2 0 nm,阈值电流 :Ith( 2 5℃ )≤ 1 5m A,Ith( 85℃ )≤ 3 0 m A,量子效率变化 :Δηex( 2 5℃～ 85℃ )≤ 1 .0 d B,线性功率 :P0 ≥ 1 0 m展开更多
Polarization insensitive AlGaInAs InP semiconductor optical amplifier is realized at a wavelength of 1550nm.The active layer consists of three tensile strained wells with strain 0 40%.The amplifiers are fabricated ...Polarization insensitive AlGaInAs InP semiconductor optical amplifier is realized at a wavelength of 1550nm.The active layer consists of three tensile strained wells with strain 0 40%.The amplifiers are fabricated to ridge waveguide structure with 7° tilted cavity.The two facets are coated with two layers of anti reflection Ti 3O 5/Al 2O 3 films.Residual facet reflectivity is found to be less than 0 03%.The semiconductor optical amplifer exhibits 20dB of signal gain and 7 2dBm of saturation output power with an excellent polarization insensitivity (less than 0 8dB) at 200mA and 1540nm window.展开更多
针对传统模型因缺少对电磁相互作用的表征而导致高频精度不足的问题,以具有优异高频特性的磷化铟高电子迁移率场效应晶体管(indium phosphide high electron mobility field-effect transistor,InP HEMT)为例,提出一种引入寄生耦合效应...针对传统模型因缺少对电磁相互作用的表征而导致高频精度不足的问题,以具有优异高频特性的磷化铟高电子迁移率场效应晶体管(indium phosphide high electron mobility field-effect transistor,InP HEMT)为例,提出一种引入寄生耦合效应的小信号等效电路模型与高频等效噪声电路模型.首先引入栅极–漏极之间的互感元件来模拟器件在高频下由于电磁相互作用产生的寄生耦合效应,并采用电磁仿真与直接参数提取相结合的建模方法,建立小信号等效电路模型.然后以所建小信号模型为基础,通过相关噪声矩阵与噪声参数的提取方法,建立高频等效噪声电路模型.实验结果表明,在500 MHz~50 GHz频段内,S参数最大误差小于3%,四噪声参数相较于传统模型提升约2.45%,并从小信号电流增益(|h21|)、单边功率增益(U)与最小噪声系数(Fmin)出发,评估了寄生耦合效应对高频性能的影响.展开更多
Using beam propagation method （BPM）, key optical design parameters of InP/AlGaInAs multiple quantumwell （MQW） ring laser were numerically analyzed. The influences of waveguide dimensions, curvature radiusand gap s...Using beam propagation method （BPM）, key optical design parameters of InP/AlGaInAs multiple quantumwell （MQW） ring laser were numerically analyzed. The influences of waveguide dimensions, curvature radiusand gap size on the coupling efficiency were discussed. An InP/AlGaInAs MQW ring laser with radius of 350 μm wasdesigned and realized. The experimental results show that the designed device, lasing at 1 563.2 nm with side modesuppression ratio higher than 20 dB, exhibited unidirectional bistability between the clockwise and counterclockwisemodes.展开更多
In this work,we investigate the impact of the whole small recess offset on DC and RF characteristics of InP high electron mobility transistors(HEMTs).L_(g)=80 nm HEMTs are fabricated with a double-recessed gate proces...In this work,we investigate the impact of the whole small recess offset on DC and RF characteristics of InP high electron mobility transistors(HEMTs).L_(g)=80 nm HEMTs are fabricated with a double-recessed gate process.We focus on their DC and RF responses,including the maximum transconductance(g_(m_max)),ON-resistance(R_(ON)),current-gain cutoff frequency(f_(T)),and maximum oscillation frequency(f_(max)).The devices have almost same RON.The g_(m_max) improves as the whole small recess moves toward the source.However,a small gate to source capacitance(C_(gs))and a small drain output conductance(g_(ds))lead to the largest f_(T),although the whole small gate recess moves toward the drain leads to the smaller g_(m_max).According to the small-signal modeling,the device with the whole small recess toward drain exhibits an excellent RF characteristics,such as f_(T)=372 GHz and f_(max)=394 GHz.This result is achieved by paying attention to adjust resistive and capacitive parasitics,which play a key role in high-frequency response.展开更多
A new planar InGaAs/InP avalanche photodiode(APD)is proposed and fabricated,which incorporates a high reflective AlGaInAs/InP distributed Bragg reflector(DBR)to improve its responsivity.The fabricated APD exhibits a l...A new planar InGaAs/InP avalanche photodiode(APD)is proposed and fabricated,which incorporates a high reflective AlGaInAs/InP distributed Bragg reflector(DBR)to improve its responsivity.The fabricated APD exhibits a low dark current of less than 3 nA at M=10 and high responsivity of 0.92 A/W at M=1.The gain bandwidth product of the device is above 80 GHz.The APD receiver exhibits a sensitivity of over-26 dBm at BER=10^-(12),which is sufficient for 10 Gb/s communication systems.展开更多
In this study we investigate strain effect in barriers of 1.3 μm AlCalnAs-InP uncooled multiple quantum well lasers. Single effective mass and Kohn-Luttinger Harniltonian equations have been solved to obtain quantum ...In this study we investigate strain effect in barriers of 1.3 μm AlCalnAs-InP uncooled multiple quantum well lasers. Single effective mass and Kohn-Luttinger Harniltonian equations have been solved to obtain quantum states and envelope wave functions in the structure. In the case of unstrained barriers, our simulations results have good agreement with a real device fabricated and presented in one of the references. Our main work is proposal of 0.2% compressive strain in the structure Barriers that causes significant reduction in Leakage current density and Auger current density characteristics in 85 ℃. 20% improvement in mode gain-current density characteristic is also obtained in 85 ℃.展开更多
A high power and low distortion 1.31 μm AlGaInAs/InP multiquantum well distributed feedback laser diode (MQW DFB LD) with RWG structure has been developed by MOCVD technique. The fiber output power of butterfly packa...A high power and low distortion 1.31 μm AlGaInAs/InP multiquantum well distributed feedback laser diode (MQW DFB LD) with RWG structure has been developed by MOCVD technique. The fiber output power of butterfly packaged module with optic isolator P f is more than 10 mW, threshold current is in the range of (13～20) mA, slope efficiency, E s>0.30 W/A and side mode suppression ratio, R S,M,S >35 dB. The composite second order, O C,S <-61 dBc and composite triple beat, B C,T <-65 dBc are obtained by test frequencies of (45～550) MHz with 60 PAL channels. In the test conditions the carrier to noise ratio, R C,N >51 dB.展开更多
文摘Polarization insensitive AlGaInAs InP semiconductor optical amplifier is realized at a wavelength of 1550nm.The active layer consists of three tensile strained wells with strain 0 40%.The amplifiers are fabricated to ridge waveguide structure with 7° tilted cavity.The two facets are coated with two layers of anti reflection Ti 3O 5/Al 2O 3 films.Residual facet reflectivity is found to be less than 0 03%.The semiconductor optical amplifer exhibits 20dB of signal gain and 7 2dBm of saturation output power with an excellent polarization insensitivity (less than 0 8dB) at 200mA and 1540nm window.
文摘针对传统模型因缺少对电磁相互作用的表征而导致高频精度不足的问题,以具有优异高频特性的磷化铟高电子迁移率场效应晶体管(indium phosphide high electron mobility field-effect transistor,InP HEMT)为例,提出一种引入寄生耦合效应的小信号等效电路模型与高频等效噪声电路模型.首先引入栅极–漏极之间的互感元件来模拟器件在高频下由于电磁相互作用产生的寄生耦合效应,并采用电磁仿真与直接参数提取相结合的建模方法,建立小信号等效电路模型.然后以所建小信号模型为基础,通过相关噪声矩阵与噪声参数的提取方法,建立高频等效噪声电路模型.实验结果表明,在500 MHz~50 GHz频段内,S参数最大误差小于3%,四噪声参数相较于传统模型提升约2.45%,并从小信号电流增益(|h21|)、单边功率增益(U)与最小噪声系数(Fmin)出发,评估了寄生耦合效应对高频性能的影响.
基金Supported by the National Natural Science Foundation of China(No.61106052)
文摘Using beam propagation method （BPM）, key optical design parameters of InP/AlGaInAs multiple quantumwell （MQW） ring laser were numerically analyzed. The influences of waveguide dimensions, curvature radiusand gap size on the coupling efficiency were discussed. An InP/AlGaInAs MQW ring laser with radius of 350 μm wasdesigned and realized. The experimental results show that the designed device, lasing at 1 563.2 nm with side modesuppression ratio higher than 20 dB, exhibited unidirectional bistability between the clockwise and counterclockwisemodes.
基金Supported by the Terahertz Multi User RF Transceiver System Development Project(Z211100004421012).
文摘In this work,we investigate the impact of the whole small recess offset on DC and RF characteristics of InP high electron mobility transistors(HEMTs).L_(g)=80 nm HEMTs are fabricated with a double-recessed gate process.We focus on their DC and RF responses,including the maximum transconductance(g_(m_max)),ON-resistance(R_(ON)),current-gain cutoff frequency(f_(T)),and maximum oscillation frequency(f_(max)).The devices have almost same RON.The g_(m_max) improves as the whole small recess moves toward the source.However,a small gate to source capacitance(C_(gs))and a small drain output conductance(g_(ds))lead to the largest f_(T),although the whole small gate recess moves toward the drain leads to the smaller g_(m_max).According to the small-signal modeling,the device with the whole small recess toward drain exhibits an excellent RF characteristics,such as f_(T)=372 GHz and f_(max)=394 GHz.This result is achieved by paying attention to adjust resistive and capacitive parasitics,which play a key role in high-frequency response.
基金Supported by the High-Technology Research and Development Program of China under Grant No 2006AA03Z421.
文摘A new planar InGaAs/InP avalanche photodiode(APD)is proposed and fabricated,which incorporates a high reflective AlGaInAs/InP distributed Bragg reflector(DBR)to improve its responsivity.The fabricated APD exhibits a low dark current of less than 3 nA at M=10 and high responsivity of 0.92 A/W at M=1.The gain bandwidth product of the device is above 80 GHz.The APD receiver exhibits a sensitivity of over-26 dBm at BER=10^-(12),which is sufficient for 10 Gb/s communication systems.
文摘In this study we investigate strain effect in barriers of 1.3 μm AlCalnAs-InP uncooled multiple quantum well lasers. Single effective mass and Kohn-Luttinger Harniltonian equations have been solved to obtain quantum states and envelope wave functions in the structure. In the case of unstrained barriers, our simulations results have good agreement with a real device fabricated and presented in one of the references. Our main work is proposal of 0.2% compressive strain in the structure Barriers that causes significant reduction in Leakage current density and Auger current density characteristics in 85 ℃. 20% improvement in mode gain-current density characteristic is also obtained in 85 ℃.
文摘A high power and low distortion 1.31 μm AlGaInAs/InP multiquantum well distributed feedback laser diode (MQW DFB LD) with RWG structure has been developed by MOCVD technique. The fiber output power of butterfly packaged module with optic isolator P f is more than 10 mW, threshold current is in the range of (13～20) mA, slope efficiency, E s>0.30 W/A and side mode suppression ratio, R S,M,S >35 dB. The composite second order, O C,S <-61 dBc and composite triple beat, B C,T <-65 dBc are obtained by test frequencies of (45～550) MHz with 60 PAL channels. In the test conditions the carrier to noise ratio, R C,N >51 dB.
