Surface leakage currents of A1GaN/GaN high electron mobility transistors are investigated by utilizing a circular double-gate structure to eliminate the influence of mesa leakage current. Different mechanisms are foun...Surface leakage currents of A1GaN/GaN high electron mobility transistors are investigated by utilizing a circular double-gate structure to eliminate the influence of mesa leakage current. Different mechanisms are found under various passivation conditions. The mechanism of the surface leakage current with AI2 03 passivation follows the two-dimensional variable range hopping model, while the mechanism of the surface leakage current with SiN passivation follows the Frenkel-Poole trap assisted emission. Two trap levels are found in the trap-assisted emission. One trap level has a barrier height of 0.22eV for the high electric field, and the other trap level has a barrier height of 0.12eV for the low electric field.展开更多
An investigation on adsorption of NO on reduced Co-Mo/Al_2O_3 and Ru-Co-Mo/Al_2O_3 catalysts has been performed using FT-IR and MS spectroscopies. IR spectra of NO adsorption showed two bands at 1895 and 1800 cm_(-1),...An investigation on adsorption of NO on reduced Co-Mo/Al_2O_3 and Ru-Co-Mo/Al_2O_3 catalysts has been performed using FT-IR and MS spectroscopies. IR spectra of NO adsorption showed two bands at 1895 and 1800 cm_(-1), and NO--TPD profiles gave rise to several peaks at 353, 423 and 473 K, which are assigned to various Co-sites on the surface. Compared with Co-Mo/Al_2O_3, the adsorption rate, binding energy, and amount of NO adsorbed on Ru-Co-Mo/Al_2O_3 are very high.展开更多
基金Supported by the National High-Technology Research and Development Program of China under Grant No 2014AA032602the National Natural Science Foundation of China under Grant Nos 61474115 and 61501421
文摘Surface leakage currents of A1GaN/GaN high electron mobility transistors are investigated by utilizing a circular double-gate structure to eliminate the influence of mesa leakage current. Different mechanisms are found under various passivation conditions. The mechanism of the surface leakage current with AI2 03 passivation follows the two-dimensional variable range hopping model, while the mechanism of the surface leakage current with SiN passivation follows the Frenkel-Poole trap assisted emission. Two trap levels are found in the trap-assisted emission. One trap level has a barrier height of 0.22eV for the high electric field, and the other trap level has a barrier height of 0.12eV for the low electric field.
基金Natural Science Foundation of Chinese Academy of Sciences.
文摘An investigation on adsorption of NO on reduced Co-Mo/Al_2O_3 and Ru-Co-Mo/Al_2O_3 catalysts has been performed using FT-IR and MS spectroscopies. IR spectra of NO adsorption showed two bands at 1895 and 1800 cm_(-1), and NO--TPD profiles gave rise to several peaks at 353, 423 and 473 K, which are assigned to various Co-sites on the surface. Compared with Co-Mo/Al_2O_3, the adsorption rate, binding energy, and amount of NO adsorbed on Ru-Co-Mo/Al_2O_3 are very high.
