以Ti/Al/Ni/Au作为欧姆接触金属体系,通过电感耦合等离子体(ICP)刻蚀的预处理,在氢化物气相外延法生长的单晶氮化镓(GaN)材料的N面实现了良好的欧姆接触,其比接触电阻率为3.7×10-4Ω·cm^2。通过扫描电子显微镜、原子力显微镜...以Ti/Al/Ni/Au作为欧姆接触金属体系,通过电感耦合等离子体(ICP)刻蚀的预处理,在氢化物气相外延法生长的单晶氮化镓(GaN)材料的N面实现了良好的欧姆接触,其比接触电阻率为3.7×10-4Ω·cm^2。通过扫描电子显微镜、原子力显微镜、阴极荧光和光致发光谱对GaN N面的表面、光学特性进行了对比表征。结果表明:未刻蚀GaN衬底的N面表面存在一定的损伤层,导致近表面处含有大量缺陷,不利于欧姆接触的形成;而ICP刻蚀处理有效地去除了损伤层。X射线光电子能谱(XPS)分析显示刻蚀后样品的Ga 3d结合能比未刻蚀样品向高能方向移动了约0.3 e V,其肖特基势垒则相应降低,有利于欧姆接触的形成。同时对Fe掺杂半绝缘GaN的N面也进行了刻蚀处理,同样实现了良好的Ti/Al/Ni/Au欧姆接触,其比接触电阻率为0.12Ω·cm^2。展开更多
Effect of cooling rate on the 3 D morphology and the growth mechanism of the proeutectic Al3Ni intermetallic compound(IMC) that forms at the Al/Ni interface after solidification was investigated by synchrotron X-ray m...Effect of cooling rate on the 3 D morphology and the growth mechanism of the proeutectic Al3Ni intermetallic compound(IMC) that forms at the Al/Ni interface after solidification was investigated by synchrotron X-ray microtomography in combination with EBSD analysis. The proeutectic Al3Ni phase that forms under an average cooling rate of 0.1 Ks^(-1) shows a characteristic faceted growth behavior and presents a typical 3 D morphology as partially hollow quadrangular prisms. On the contrary, that forms under an average cooling rate of 10 Ks^(-1) shows complicated dendritic morphology with asymmetrically distributed arms and faceted V-shape groove at the distal end, indicating a gradual transition of the growth behavior from non-faceted to faceted during the solidification process. These results reveal that the morphology of the proeutectic Al3Ni is highly sensitive to the solidification condition so that fine control of the desired morphology may be achieved by carefully manipulating the cooling profile.展开更多
文摘以Ti/Al/Ni/Au作为欧姆接触金属体系,通过电感耦合等离子体(ICP)刻蚀的预处理,在氢化物气相外延法生长的单晶氮化镓(GaN)材料的N面实现了良好的欧姆接触,其比接触电阻率为3.7×10-4Ω·cm^2。通过扫描电子显微镜、原子力显微镜、阴极荧光和光致发光谱对GaN N面的表面、光学特性进行了对比表征。结果表明:未刻蚀GaN衬底的N面表面存在一定的损伤层,导致近表面处含有大量缺陷,不利于欧姆接触的形成;而ICP刻蚀处理有效地去除了损伤层。X射线光电子能谱(XPS)分析显示刻蚀后样品的Ga 3d结合能比未刻蚀样品向高能方向移动了约0.3 e V,其肖特基势垒则相应降低,有利于欧姆接触的形成。同时对Fe掺杂半绝缘GaN的N面也进行了刻蚀处理,同样实现了良好的Ti/Al/Ni/Au欧姆接触,其比接触电阻率为0.12Ω·cm^2。
基金the National Natural Science Foundation of China-Excellent Young Scholars(No.51922068)the National Natural Science Foundation of China(Nos.51727802,51821001 and 51904187)The support of synchrotron radiation phase-contrast imaging by the BL13W1 beam line of Shanghai Synchrotron Radiation Facility(SSRF),China,is gratefully acknowledged。
文摘Effect of cooling rate on the 3 D morphology and the growth mechanism of the proeutectic Al3Ni intermetallic compound(IMC) that forms at the Al/Ni interface after solidification was investigated by synchrotron X-ray microtomography in combination with EBSD analysis. The proeutectic Al3Ni phase that forms under an average cooling rate of 0.1 Ks^(-1) shows a characteristic faceted growth behavior and presents a typical 3 D morphology as partially hollow quadrangular prisms. On the contrary, that forms under an average cooling rate of 10 Ks^(-1) shows complicated dendritic morphology with asymmetrically distributed arms and faceted V-shape groove at the distal end, indicating a gradual transition of the growth behavior from non-faceted to faceted during the solidification process. These results reveal that the morphology of the proeutectic Al3Ni is highly sensitive to the solidification condition so that fine control of the desired morphology may be achieved by carefully manipulating the cooling profile.
