In this study,HEA/AI composite interlayer was used to fabricate Ti/Mg bimetal composites by solidliquid compound casting process.The Al layer was prepared on the surface of TC4 alloy by hot dipping,and the FeCoNiCr HE...In this study,HEA/AI composite interlayer was used to fabricate Ti/Mg bimetal composites by solidliquid compound casting process.The Al layer was prepared on the surface of TC4 alloy by hot dipping,and the FeCoNiCr HEA layer was prepared by magnetron sputtering onto the Al layer.The influence of the HEA layer thickness and pouring temperature on interface evolution was investigated based on SEM observation and thermodynamic analysis.Results indicate that the sluggish diffusion effect of HEA can effectively inhibit the interfacial diffusion between Al and Mg,which is conducive to the formation of solid solution,especially when the thickness of HEA is 800 nm.With the increase of casting temperature from 720 ℃ to 730 ℃,740℃,and 750 ℃,α-Al(Mg),α-Al(Mg)+Al3Mg2,Al3Mg2+Al12Mg17,and Al12Mg17+δ-Mg are formed at the interface of Ti/Mg bimetal,respectively.When the thickness of the HEA layer is 800 nm and the pouring temperature is 720 ℃,the bonding strength of the Ti/Mg bimetal can reach the maximum of 93.6 MPa.展开更多
We report on an improvement in the crystal quality of GaN film with an Ino.17Alo.83N interlayer grown by pulsed metal-organic chemical vapor deposition, which is in-plane lattice-matched to GaN films. The indium compo...We report on an improvement in the crystal quality of GaN film with an Ino.17Alo.83N interlayer grown by pulsed metal-organic chemical vapor deposition, which is in-plane lattice-matched to GaN films. The indium composition of about 17% and the reductions of both screw and edge threading dislocations （TDs） in GaN film with the InA1N interlayer are estimated by high resolution X-ray diffraction. Transmission electron microscopy （TEM） measurements are employed to understand the mechanism of reduction in TD density. Raman and photoluminescence measurements indicate that the InA1N interlayer can improve the crystal quality of GaN film, and verify that there is no additional residual stress induced into the GaN film with InA1N interlayer. Atomic force microscopy measurement shows that the InA1N interlayer brings in a smooth surface morphology of GaN film. All the results show that the insertion of the InA1N interlayer is a convenient method to achieve excellent crystal quality in GaN epitaxy.展开更多
基金financial supports from the National Natural Science Foundation of China (No. 51875062)China Postdoctoral Science Foundation (No. 2021M700567)。
文摘In this study,HEA/AI composite interlayer was used to fabricate Ti/Mg bimetal composites by solidliquid compound casting process.The Al layer was prepared on the surface of TC4 alloy by hot dipping,and the FeCoNiCr HEA layer was prepared by magnetron sputtering onto the Al layer.The influence of the HEA layer thickness and pouring temperature on interface evolution was investigated based on SEM observation and thermodynamic analysis.Results indicate that the sluggish diffusion effect of HEA can effectively inhibit the interfacial diffusion between Al and Mg,which is conducive to the formation of solid solution,especially when the thickness of HEA is 800 nm.With the increase of casting temperature from 720 ℃ to 730 ℃,740℃,and 750 ℃,α-Al(Mg),α-Al(Mg)+Al3Mg2,Al3Mg2+Al12Mg17,and Al12Mg17+δ-Mg are formed at the interface of Ti/Mg bimetal,respectively.When the thickness of the HEA layer is 800 nm and the pouring temperature is 720 ℃,the bonding strength of the Ti/Mg bimetal can reach the maximum of 93.6 MPa.
基金supported by the National Natural Science Foundation of China(Grant Nos.61076079,61274092,and 61204006)the Key Program of the National Natural Science Foundation of China(Grant No.61334002)
文摘We report on an improvement in the crystal quality of GaN film with an Ino.17Alo.83N interlayer grown by pulsed metal-organic chemical vapor deposition, which is in-plane lattice-matched to GaN films. The indium composition of about 17% and the reductions of both screw and edge threading dislocations （TDs） in GaN film with the InA1N interlayer are estimated by high resolution X-ray diffraction. Transmission electron microscopy （TEM） measurements are employed to understand the mechanism of reduction in TD density. Raman and photoluminescence measurements indicate that the InA1N interlayer can improve the crystal quality of GaN film, and verify that there is no additional residual stress induced into the GaN film with InA1N interlayer. Atomic force microscopy measurement shows that the InA1N interlayer brings in a smooth surface morphology of GaN film. All the results show that the insertion of the InA1N interlayer is a convenient method to achieve excellent crystal quality in GaN epitaxy.
