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Understanding the Properties of Silicon Solar Cells Aluminium Contact Layers and Its Effect on Mechanical Stability
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作者 V. A. Popovich M. P. F. H. L. van Maris +2 位作者 M. Janssen I. J. Bennett I. M. Richardson 《Materials Sciences and Applications》 2013年第2期118-127,共10页
As the thickness of silicon solar wafer and solar cells becomes thinner, the cells are subjected to high stress due to the thermal coefficient mismatch induced by metallization process. Handling and bowing problems as... As the thickness of silicon solar wafer and solar cells becomes thinner, the cells are subjected to high stress due to the thermal coefficient mismatch induced by metallization process. Handling and bowing problems associated with thinner wafers become increasingly important, as these can lead to cells cracking and thus to high yield losses. The goal of this work to provide experimental understanding of Al rear side microstructure development and mechanical properties as well as correlate the obtained results with fracture behaviour of the cell. It is shown that the aluminium back contact has a complex microstructure, consisting of five main components: 1) the back surface field layer;2) a eutectic layer;3) spherical (3 - 5 μm) hypereutectic Al-Si particles surrounded by a thin aluminium oxide layer (200 nm);4) a bis- muth-silicate glass matrix;and 5) pores (14 vol%). It was concluded that the eutectic layer thickness and waviness depends on Al particle size, amount of Al paste and textured surface roughness of silicon wafers. The Young’s modulus of the Al-Si particles is estimated by nano-indentation and the overall Young’s modulus is estimated on the basis of bowing measurements and found to be ~43 GPa. It was found, that there is a relation between aluminium paste composition, eutectic layer thickness, mechanical strength and bowing of solar cells. Three main parameters were found to affect the mechanical strength of mc-silicon solar cells with an aluminium contact layer, namely the eutectic layer thickness and uniformity, the Al layer thickness (which results from the Al particle size and its distribution), and the amount of porosity and the bismuth glass fraction. 展开更多
关键词 al back contact FRACTURE Strength BOWING Young’s MODULUS Silicon Solar Cell
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SiN_x∶H/Al复合膜层在背点接触太阳电池中的应用
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作者 陈达明 梁宗存 +3 位作者 沈辉 杨灼坚 梁学勤 邹禧武 《太阳能学报》 EI CAS CSCD 北大核心 2011年第4期472-475,共4页
尝试将SiNx∶H/Al复合膜层应用到晶体硅太阳电池的背部结构上。首先利用PECVD在硅片背面沉积一层SiNx∶H薄膜,然后在SiNx∶H薄膜上丝网印刷Al层,构成SiNx∶H/Al复合膜层。研究了具有SiNx∶H/Al复合膜层结构的硅片的光学内背反射性能,测... 尝试将SiNx∶H/Al复合膜层应用到晶体硅太阳电池的背部结构上。首先利用PECVD在硅片背面沉积一层SiNx∶H薄膜,然后在SiNx∶H薄膜上丝网印刷Al层,构成SiNx∶H/Al复合膜层。研究了具有SiNx∶H/Al复合膜层结构的硅片的光学内背反射性能,测得其内背反射率达88.9%。并从理论上设计出基于SiNx∶H/Al复合膜层的背点接触太阳电池最优结构,并从实验上制备出这种背点接触太阳电池,初期效率达12.36%。最后,提出了背点接触太阳电池工艺的改进方案。 展开更多
关键词 SiNx:H/al复合膜层 丝网印刷 内背反射率 背点接触太阳电池
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单晶硅太阳电池背场欧姆接触的改善研究 被引量:5
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作者 李幼真 周继承 +1 位作者 黄迪辉 赵保星 《太阳能学报》 EI CAS CSCD 北大核心 2011年第1期41-44,共4页
采用磁控溅射在扩散工艺后的单晶硅片背面沉积了铝膜,对样品在600~900℃之间进行了快速热处理,利用四探针电阻测试仪、扫描电镜对热处理前后样品的电阻率、形貌等进行了表征,用半导体参数测试仪测量了样品的I-V曲线,计算了铝膜与硅片... 采用磁控溅射在扩散工艺后的单晶硅片背面沉积了铝膜,对样品在600~900℃之间进行了快速热处理,利用四探针电阻测试仪、扫描电镜对热处理前后样品的电阻率、形貌等进行了表征,用半导体参数测试仪测量了样品的I-V曲线,计算了铝膜与硅片的接触电阻,并同步与印刷铝浆料样品进行了对比,研究表明,与丝网印刷工艺相比,溅射铝膜具有均匀细腻、电阻率低、接触电阻小等优点。 展开更多
关键词 欧姆接触 磁控溅射 晶硅太阳电池 铝背场
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