In current study,the rare-reported solution-driven DyO_(x)films have been prepared to act as the dielectric layer of high performance InZnO/DyO_(x)thin film transistors(TFTs).Annealing temperature dependent thermal de...In current study,the rare-reported solution-driven DyO_(x)films have been prepared to act as the dielectric layer of high performance InZnO/DyO_(x)thin film transistors(TFTs).Annealing temperature dependent thermal decomposition,morphology,crystallization behavior,and chemical compositions of DyO_(x) and InZnO films have been investigated respectively.Results have demonstrated that air-annealed InZnO/DyO_(x)TFTs possess the improved electrical performance,including ultrahigh on/off current ratio of 1×10^(9),larger saturation mobility of 12.6 cm^(2) V-1 s^(-1) and negligible hysteresis after 10 d aging diffusion in the relative humidity(RH)of 40%air ambient,which has been explored by the variable range-hopping(VRH)percolation model and energy band theory.The distinct illumination bias stability can be attributed to the generated various interface defects and concluded that the white light illuminated TFT behaves the higher stability with the smaller threshold voltage shift of 0.25 V.To confirm its feasible application in digital circuit,a resistor-loaded inverter based on InZnO/DyO_(x)TFTs has been constructed.A high gain of 10.1 and good dynamic response behavior have been detected at a low operating voltage of 2 V.As a result,it can be inferred that diffusion-induced enhanced carrier transporting mechanism is an economical and effective method to optimize the electrical performance of solution-derived InZnO/DyO_(x)TFTs,indicating its potential application prospects in flexible transparent electronics with low power consumption.展开更多
基金supported financially by the National Natural Science Foundation of China(No.11774001)the open fund for Discipline Construction,Institute of Physical Science and Information Technology,Anhui University(No.S01003101)+2 种基金the Doctoral Research Funding of Anhui University and the Provincial Natural Science Research Program of Higher Education Institutions of Anhui Province(No.KJ2018A0026)the Natural Science Research Project of Colleges and Universities in Anhui Province(No.KJ2018ZD060)the Outstanding Young Talents Support Program in Colleges and Universities(No.gxyq2020108)。
文摘In current study,the rare-reported solution-driven DyO_(x)films have been prepared to act as the dielectric layer of high performance InZnO/DyO_(x)thin film transistors(TFTs).Annealing temperature dependent thermal decomposition,morphology,crystallization behavior,and chemical compositions of DyO_(x) and InZnO films have been investigated respectively.Results have demonstrated that air-annealed InZnO/DyO_(x)TFTs possess the improved electrical performance,including ultrahigh on/off current ratio of 1×10^(9),larger saturation mobility of 12.6 cm^(2) V-1 s^(-1) and negligible hysteresis after 10 d aging diffusion in the relative humidity(RH)of 40%air ambient,which has been explored by the variable range-hopping(VRH)percolation model and energy band theory.The distinct illumination bias stability can be attributed to the generated various interface defects and concluded that the white light illuminated TFT behaves the higher stability with the smaller threshold voltage shift of 0.25 V.To confirm its feasible application in digital circuit,a resistor-loaded inverter based on InZnO/DyO_(x)TFTs has been constructed.A high gain of 10.1 and good dynamic response behavior have been detected at a low operating voltage of 2 V.As a result,it can be inferred that diffusion-induced enhanced carrier transporting mechanism is an economical and effective method to optimize the electrical performance of solution-derived InZnO/DyO_(x)TFTs,indicating its potential application prospects in flexible transparent electronics with low power consumption.
