In this work, an efficient AgVO3/MoS 2 composite photocatalyst was successfully synthesized via a hydrothermal method. The photocatalytic activity of the as-prepared photocatalyst was evaluated by using it for assessi...In this work, an efficient AgVO3/MoS 2 composite photocatalyst was successfully synthesized via a hydrothermal method. The photocatalytic activity of the as-prepared photocatalyst was evaluated by using it for assessing the degradation of different organic pollutants under visible-light irradiation. The composite 3%-AgVO3/MoS 2 catalyst demonstrated a significantly enhanced photocatalytic activity compared to the pure compounds（AgVO3 and MoS2）. The reason behind the excellent photocatalytic performance was the modification of MoS 2 by AgVO3 to facilitate O2 adsorption/activation. In addition, the composite catalyst facilitates the two-electron oxygen reduction reaction whereby H2O2 is generated on the surface of MoS 2 to produce additional reactive oxygen species（ROSs）. ESR coupled with the POPHA fluorescence detection method and a free radical capture experiment were used to elucidate the mechanism of formation of the ROSs, including ·OH, ·O2- and H2O2. Furthermore, the generation of additional ROSs could accelerate electron consumption, leaving behind more holes for the oxidation of organic pollutants. A possible photocatalytic mechanism of the composite is also discussed.展开更多
Metal–insulator–semiconductor(MOS) capacitor is a key structure for high performance MOS field transistors(MOSFETs), requiring low leakage current, high breakdown voltage, and low interface states. In this paper, β...Metal–insulator–semiconductor(MOS) capacitor is a key structure for high performance MOS field transistors(MOSFETs), requiring low leakage current, high breakdown voltage, and low interface states. In this paper, β-Ga_(2)O_(3) MOS capacitors were fabricated with ALD deposited Al_(2)O_(3) using H_(2)O or ozone(O_(3)) as precursors. Compared with the Al_(2)O_(3) gate dielectric with H_(2)O as ALD precursor, the leakage current for the O_(3) precursor case is decreased by two orders of magnitude, while it keeps the same level at the fixed charges, interface state density, and border traps. The SIMS tests show that Al_(2)O_(3) with O_(3) as precursor contains more carbon impurities. The current transport mechanism analysis suggests that the C–H complex in Al_(2)O_(3) with O_(3) precursor serves as deep energy trap to reduce the leakage current. These results indicate that the Al_(2)O_(3)/β-Ga_(2)O_(3)MOS capacitor using the O_(3) precursor has a low leakage current and holds potential for application in β-Ga_(2)O_(3) MOSFETs.展开更多
基金supported by the National Natural Science Foundation of China(21706104)the Natural Science Foundation of Jiangsu Province(BK20150484)+1 种基金the China Postdoctoral Science Foundation(2015M570416)the financial support of the Research Foundation of Jiangsu University,China(14JDG148)~~
文摘In this work, an efficient AgVO3/MoS 2 composite photocatalyst was successfully synthesized via a hydrothermal method. The photocatalytic activity of the as-prepared photocatalyst was evaluated by using it for assessing the degradation of different organic pollutants under visible-light irradiation. The composite 3%-AgVO3/MoS 2 catalyst demonstrated a significantly enhanced photocatalytic activity compared to the pure compounds（AgVO3 and MoS2）. The reason behind the excellent photocatalytic performance was the modification of MoS 2 by AgVO3 to facilitate O2 adsorption/activation. In addition, the composite catalyst facilitates the two-electron oxygen reduction reaction whereby H2O2 is generated on the surface of MoS 2 to produce additional reactive oxygen species（ROSs）. ESR coupled with the POPHA fluorescence detection method and a free radical capture experiment were used to elucidate the mechanism of formation of the ROSs, including ·OH, ·O2- and H2O2. Furthermore, the generation of additional ROSs could accelerate electron consumption, leaving behind more holes for the oxidation of organic pollutants. A possible photocatalytic mechanism of the composite is also discussed.
基金Project supported in part by the Science and Technology Development Plan Project of Jilin Province, China (Grant No. YDZJ202303CGZH022)the National Key Research and Development Program of China (Grant No. 2024YFE0205300)+1 种基金the National Natural Science Foundation of China (Grant No. 62471504)the Open Fund of the State Key Laboratory of Optoelectronic Materials and Technologies (Sun Yat-Sen University) (Grant No. OEMT-2023KF-05)。
文摘Metal–insulator–semiconductor(MOS) capacitor is a key structure for high performance MOS field transistors(MOSFETs), requiring low leakage current, high breakdown voltage, and low interface states. In this paper, β-Ga_(2)O_(3) MOS capacitors were fabricated with ALD deposited Al_(2)O_(3) using H_(2)O or ozone(O_(3)) as precursors. Compared with the Al_(2)O_(3) gate dielectric with H_(2)O as ALD precursor, the leakage current for the O_(3) precursor case is decreased by two orders of magnitude, while it keeps the same level at the fixed charges, interface state density, and border traps. The SIMS tests show that Al_(2)O_(3) with O_(3) as precursor contains more carbon impurities. The current transport mechanism analysis suggests that the C–H complex in Al_(2)O_(3) with O_(3) precursor serves as deep energy trap to reduce the leakage current. These results indicate that the Al_(2)O_(3)/β-Ga_(2)O_(3)MOS capacitor using the O_(3) precursor has a low leakage current and holds potential for application in β-Ga_(2)O_(3) MOSFETs.
