Different pattern structures are obtained on the AglnSbTe （AIST） phase change film as induced by laser beam. Atomic force microscopy （AFM） was used to observe and analyze the different pattern structures. The AFM ...Different pattern structures are obtained on the AglnSbTe （AIST） phase change film as induced by laser beam. Atomic force microscopy （AFM） was used to observe and analyze the different pattern structures. The AFM photos clearly show the gradually changing process of pattern structures induced by different threshold effects, such as crystallization threshold, microbump threshold, melting threshold, and ablation threshold. The analysis indicates that the AIST material is very effective in the fabrication of pattern structures and can offer relevant guidance for application of the material in the future.展开更多
基金supported by the National Natural Science Foundation of China(Nos.50772120, 60977004,and 11054001)the Shanghai Rising Star Tracking Program(No.10QH1402700)the Basic Research Program of China(No.2007CB935400)
文摘Different pattern structures are obtained on the AglnSbTe （AIST） phase change film as induced by laser beam. Atomic force microscopy （AFM） was used to observe and analyze the different pattern structures. The AFM photos clearly show the gradually changing process of pattern structures induced by different threshold effects, such as crystallization threshold, microbump threshold, melting threshold, and ablation threshold. The analysis indicates that the AIST material is very effective in the fabrication of pattern structures and can offer relevant guidance for application of the material in the future.
