In this study,a two-step method was used to synthesize highly luminescent AgGaS/ZnS/ZnS quantum dots(QDs).In the first step,an inner ZnS shell was formed via a one-pot method,which resulted in a smaller lattice mismat...In this study,a two-step method was used to synthesize highly luminescent AgGaS/ZnS/ZnS quantum dots(QDs).In the first step,an inner ZnS shell was formed via a one-pot method,which resulted in a smaller lattice mismatch between the AgGaS core and the outer ZnS shell,thereby facilitating the formation of a thick outer shell.After the two-step shelling process,the synthesized AgGaS/ZnS/ZnS QDs showed an excellent photoluminescence quantum yield(PLQY)of 96.4%with a peak wavelength of 508 nm,repre-senting the highest PLQY reported thus far for AgGaS QDs.Furthermore,the effect of halogen ions in Zn precursors on the shelling process was investigated.It was proposed that the capacity of halogen ions to coordinate with the QDs influenced the balance between Zn cation diffusion and ZnS shelling reaction.Specifically,the ZnS shelling reaction was dominant when ZnCl_(2)was employed,while Zn cation diffusion was the dominant process under the I^(−)-rich environment.This work provides insights into the interfacial restructuring during the ZnS shelling and offers a clear map for the tailored synthesis of core/shell QDs.展开更多
综合报道了本实验室关于黄铜矿类I-III-VI2型系列晶体的研究进展。采用两温区气相输运温度振荡法合成出高纯、单相、致密的多晶材料,在三温区立式炉中用坩埚旋转下降法生长出AgGaS2、AgGaSe2和AgGa1-xInxSe2等系列单晶体,X射线单晶衍射...综合报道了本实验室关于黄铜矿类I-III-VI2型系列晶体的研究进展。采用两温区气相输运温度振荡法合成出高纯、单相、致密的多晶材料,在三温区立式炉中用坩埚旋转下降法生长出AgGaS2、AgGaSe2和AgGa1-xInxSe2等系列单晶体,X射线单晶衍射谱和回摆谱表明晶体的结晶性好,结构完整;红外透过率接近理论值,吸收系数低于0.017 cm-1,表明生长的晶体光学质量高。研究出一种新的能对AgGa1-xInxSe2晶体(112)晶面进行择优腐蚀的腐蚀剂:(30 g CrO3+10 mL H2O)∶H4PO4(85%)∶HNO3(65～68%)∶HF(40%)=10∶10∶10∶2(体积比),在60℃下腐蚀40 min,能够清晰地显示出AgGa1-xInxSe2晶体(112)面取向一致的三角形腐蚀坑,边界清晰,蚀坑密度大约为105/cm2数量级。采用自行研制的晶体定向切割新方法,加工出AgGa1-xInxSe2-OPO器件,获得了3～5μm的激光输出,光-光转换效率达21%。展开更多
This note reports a new procedure of polycrystalline synthesis and a new technique of single crystal growth on AgGaS2, i.e. two-zone temperature oscillation vapor transporting and descending crucible with rotation. A ...This note reports a new procedure of polycrystalline synthesis and a new technique of single crystal growth on AgGaS2, i.e. two-zone temperature oscillation vapor transporting and descending crucible with rotation. A single phase dense AgGaS2 polycrystalline ingot was synthesized, and a crack-free AgGaS2 single crystal with 15 mm in diameter and 30 mm in length was grown by the techniques mentioned above. Structure integrity of the crystal was studied by the X-ray diffraction technique. Six order X-ray spectra from the {011} face of the crystal were obtained, and an anomalous phenomenon was observed for the first time that intensity of the higher order diffraction peak is much stronger than that of the lower order diffraction peak. Etch-pits of the crystal were observed by the scanning electron microscopy (SEM).展开更多
基金supported by the National Natural Science Foun-dation of China(No.62074044)Zhongshan-Fudan Joint Innova-tion Center,Jihua Laboratory Projects of Guangdong Province(No.X190111UZ190)+1 种基金Shanghai Post-doctoral Excellence Program(No.2021016)Shanghai Rising-Star program(No.22YF1402000).
文摘In this study,a two-step method was used to synthesize highly luminescent AgGaS/ZnS/ZnS quantum dots(QDs).In the first step,an inner ZnS shell was formed via a one-pot method,which resulted in a smaller lattice mismatch between the AgGaS core and the outer ZnS shell,thereby facilitating the formation of a thick outer shell.After the two-step shelling process,the synthesized AgGaS/ZnS/ZnS QDs showed an excellent photoluminescence quantum yield(PLQY)of 96.4%with a peak wavelength of 508 nm,repre-senting the highest PLQY reported thus far for AgGaS QDs.Furthermore,the effect of halogen ions in Zn precursors on the shelling process was investigated.It was proposed that the capacity of halogen ions to coordinate with the QDs influenced the balance between Zn cation diffusion and ZnS shelling reaction.Specifically,the ZnS shelling reaction was dominant when ZnCl_(2)was employed,while Zn cation diffusion was the dominant process under the I^(−)-rich environment.This work provides insights into the interfacial restructuring during the ZnS shelling and offers a clear map for the tailored synthesis of core/shell QDs.
文摘综合报道了本实验室关于黄铜矿类I-III-VI2型系列晶体的研究进展。采用两温区气相输运温度振荡法合成出高纯、单相、致密的多晶材料,在三温区立式炉中用坩埚旋转下降法生长出AgGaS2、AgGaSe2和AgGa1-xInxSe2等系列单晶体,X射线单晶衍射谱和回摆谱表明晶体的结晶性好,结构完整;红外透过率接近理论值,吸收系数低于0.017 cm-1,表明生长的晶体光学质量高。研究出一种新的能对AgGa1-xInxSe2晶体(112)晶面进行择优腐蚀的腐蚀剂:(30 g CrO3+10 mL H2O)∶H4PO4(85%)∶HNO3(65～68%)∶HF(40%)=10∶10∶10∶2(体积比),在60℃下腐蚀40 min,能够清晰地显示出AgGa1-xInxSe2晶体(112)面取向一致的三角形腐蚀坑,边界清晰,蚀坑密度大约为105/cm2数量级。采用自行研制的晶体定向切割新方法,加工出AgGa1-xInxSe2-OPO器件,获得了3～5μm的激光输出,光-光转换效率达21%。
基金Supported by RFBR Project(No.10-02-01452-a)Presidium SB RAS under the Project Ⅶ.63.3.1 of Ⅶ.63.3 Prog.Integrated Projec of 2012－2014 and Join Proj. between Presidium SB RAS and Presidium NAS,Belarus No.10 of 2010
基金This work was supported by the Sichuan Provincial Research Foundation of of China (Grant No: 99-479).
文摘This note reports a new procedure of polycrystalline synthesis and a new technique of single crystal growth on AgGaS2, i.e. two-zone temperature oscillation vapor transporting and descending crucible with rotation. A single phase dense AgGaS2 polycrystalline ingot was synthesized, and a crack-free AgGaS2 single crystal with 15 mm in diameter and 30 mm in length was grown by the techniques mentioned above. Structure integrity of the crystal was studied by the X-ray diffraction technique. Six order X-ray spectra from the {011} face of the crystal were obtained, and an anomalous phenomenon was observed for the first time that intensity of the higher order diffraction peak is much stronger than that of the lower order diffraction peak. Etch-pits of the crystal were observed by the scanning electron microscopy (SEM).
