In this work,we demonstrated the InSnO(ITO)TFTs passivated with SiO_(2)via the PECVD process compatible with large-area production for the first time.The passivated ITO TFTs with various channel thicknesses(t_(ch)=4,5...In this work,we demonstrated the InSnO(ITO)TFTs passivated with SiO_(2)via the PECVD process compatible with large-area production for the first time.The passivated ITO TFTs with various channel thicknesses(t_(ch)=4,5,6 nm)exhibit excellent electrical performance and superior uniformity.The reliability properties of ITO TFTs were evaluated in detail under positive bias stress(PBS)conditions before and after passivation.Compared to the devices without passivation,the passivated devices have only 50%threshold voltage degradation(ΔV_(th))and 50%newly generated traps due to excellent isolation of the ambient atmosphere.The negligible performance degradation of ITO TFTs with passivation during negative bias stress(NBS)and negative bias temperature stress(NBTS)verifies the outstanding immunity to the water vapor of the SiO_(2)passivation layer.Overall,the ITO TFT with the t_(ch)of 6 nm and with SiO_(2)passivation exhibits the best performance in terms of electrical properties,uniformity,and reliability,which is promising in large-area production.展开更多
Doping in thin-film transistors(TFTs) plays a crucial role in tailoring material properties to enhance device performance, making them essential for advanced electronic applications. This study explores the synthesis ...Doping in thin-film transistors(TFTs) plays a crucial role in tailoring material properties to enhance device performance, making them essential for advanced electronic applications. This study explores the synthesis and characterization of TFTs fabricated using nickel(Ni)-doped indium oxide(In_(2)O_(3)) via a wet-chemical approach. The presented work investigates the effect of "Ni" incorporation in In_(2)O_(3) on the structural and electrical transport properties of In_(2)O_(3), revealing that higher "Ni" content decreases the oxygen vacancies, leading to a reduction in leakage current and a forward shift in threshold potential(V_(th)).Experimental findings reveal that Ni In O-based TFTs(with Ni = 0.5%) showcase enhanced electrical performance, achieving mobility of 7.54 cm^(2)/(V·s), an impressive ON/OFF current ratio of ~10^(7), a V_(th) of 6.26 V, reduced interfacial trap states(D_(it)) of 8.23 ×10^(12) cm^(-2) and enhanced biased stress stability. The efficacy of "Ni" incorporation is attributed to the upgraded Lewis acidity, stable Ni-O bond strength, and small ionic radius of Ni. Negative bias illumination stability(NBIS) measurements further indicate that device stability diminishes with shorter light wavelengths, likely due to the activation of oxygen vacancies. These findings validate the solution-processed techniques' potential for future large-scale, low-cost, energy-efficient, and high-performance electronics.展开更多
Innovative use of HfO_(2)-based high-dielectric-permittivity materials could enable their integration into few-nanometre-scale devices for storing substantial quantities of electrical charges,which have received wides...Innovative use of HfO_(2)-based high-dielectric-permittivity materials could enable their integration into few-nanometre-scale devices for storing substantial quantities of electrical charges,which have received widespread applications in high-storage-density dynamic random access memory and energy-efficient complementary metal-oxide-semiconductor devices.During bipolar high electric-field cycling in numbers close to dielectric breakdown,the dielectric permittivity suddenly increases by 30 times after oxygen-vacancy ordering and ferroelectric-to-nonferroelectric phase transition of near-edge plasma-treated Hf_(0.5)Zr_(0.5)O_(2) thin-film capacitors.Here we report a much higher dielectric permittivity of 1466 during downscaling of the capacitor into the diameter of 3.85μm when the ferroelectricity suddenly disappears without high-field cycling.The stored charge density is as high as 183μC cm^(−2) at an operating voltage/time of 1.2 V/50 ns at cycle numbers of more than 10^(12) without inducing dielectric breakdown.The study of synchrotron X-ray micro-diffraction patterns show missing of a mixed tetragonal phase.The image of electron energy loss spectroscopy shows the preferred oxygen-vacancy accumulation at the regions near top/bottom electrodes as well as grain boundaries.The ultrahigh dielectric-permittivity material enables high-density integration of extremely scaled logic and memory devices in the future.展开更多
基金supported in part by the National Natural Science Foundation of China(62404110,62274033)Natural Science Foundation of Jiangsu Province(BK20221453)+1 种基金Fundamental Research Funds for the Central UniversitiesNatural Science Research Start-up Foundation of Recruiting Talents of Nanjing University of Posts and Telecommunications(NY223159)。
文摘In this work,we demonstrated the InSnO(ITO)TFTs passivated with SiO_(2)via the PECVD process compatible with large-area production for the first time.The passivated ITO TFTs with various channel thicknesses(t_(ch)=4,5,6 nm)exhibit excellent electrical performance and superior uniformity.The reliability properties of ITO TFTs were evaluated in detail under positive bias stress(PBS)conditions before and after passivation.Compared to the devices without passivation,the passivated devices have only 50%threshold voltage degradation(ΔV_(th))and 50%newly generated traps due to excellent isolation of the ambient atmosphere.The negligible performance degradation of ITO TFTs with passivation during negative bias stress(NBS)and negative bias temperature stress(NBTS)verifies the outstanding immunity to the water vapor of the SiO_(2)passivation layer.Overall,the ITO TFT with the t_(ch)of 6 nm and with SiO_(2)passivation exhibits the best performance in terms of electrical properties,uniformity,and reliability,which is promising in large-area production.
基金funded by the research startup funding of National Research Foundation (NRF) of Korea through the Ministry of Science and ICT 2022R1G1A1009887Part of this study was supported by research start-up funding of Anhui University (S202418001/078)。
文摘Doping in thin-film transistors(TFTs) plays a crucial role in tailoring material properties to enhance device performance, making them essential for advanced electronic applications. This study explores the synthesis and characterization of TFTs fabricated using nickel(Ni)-doped indium oxide(In_(2)O_(3)) via a wet-chemical approach. The presented work investigates the effect of "Ni" incorporation in In_(2)O_(3) on the structural and electrical transport properties of In_(2)O_(3), revealing that higher "Ni" content decreases the oxygen vacancies, leading to a reduction in leakage current and a forward shift in threshold potential(V_(th)).Experimental findings reveal that Ni In O-based TFTs(with Ni = 0.5%) showcase enhanced electrical performance, achieving mobility of 7.54 cm^(2)/(V·s), an impressive ON/OFF current ratio of ~10^(7), a V_(th) of 6.26 V, reduced interfacial trap states(D_(it)) of 8.23 ×10^(12) cm^(-2) and enhanced biased stress stability. The efficacy of "Ni" incorporation is attributed to the upgraded Lewis acidity, stable Ni-O bond strength, and small ionic radius of Ni. Negative bias illumination stability(NBIS) measurements further indicate that device stability diminishes with shorter light wavelengths, likely due to the activation of oxygen vacancies. These findings validate the solution-processed techniques' potential for future large-scale, low-cost, energy-efficient, and high-performance electronics.
基金supported by the National Key Basic Research Program of China (2022YFA1402904)Basic Research Project of Shanghai Science and Technology Innovation Action (grant number 24CL2900900)the National Natural Science Foundation of China (grant number 61904034)
文摘Innovative use of HfO_(2)-based high-dielectric-permittivity materials could enable their integration into few-nanometre-scale devices for storing substantial quantities of electrical charges,which have received widespread applications in high-storage-density dynamic random access memory and energy-efficient complementary metal-oxide-semiconductor devices.During bipolar high electric-field cycling in numbers close to dielectric breakdown,the dielectric permittivity suddenly increases by 30 times after oxygen-vacancy ordering and ferroelectric-to-nonferroelectric phase transition of near-edge plasma-treated Hf_(0.5)Zr_(0.5)O_(2) thin-film capacitors.Here we report a much higher dielectric permittivity of 1466 during downscaling of the capacitor into the diameter of 3.85μm when the ferroelectricity suddenly disappears without high-field cycling.The stored charge density is as high as 183μC cm^(−2) at an operating voltage/time of 1.2 V/50 ns at cycle numbers of more than 10^(12) without inducing dielectric breakdown.The study of synchrotron X-ray micro-diffraction patterns show missing of a mixed tetragonal phase.The image of electron energy loss spectroscopy shows the preferred oxygen-vacancy accumulation at the regions near top/bottom electrodes as well as grain boundaries.The ultrahigh dielectric-permittivity material enables high-density integration of extremely scaled logic and memory devices in the future.
