We investigate the temperature dependence of the emission spectrum of a laser-induced semiconductor（Ge and Si） plasma. The change in spectral intensity with the sample temperature indicates the change of the laser a...We investigate the temperature dependence of the emission spectrum of a laser-induced semiconductor（Ge and Si） plasma. The change in spectral intensity with the sample temperature indicates the change of the laser ablation mass. The reflectivity of the target surface is reduced as the sample is heated, which leads to an increase in the laser energy coupled to the surface of the sample and eventually produces a higher spectral intensity.The spectral intensities are enhanced by a few times at high temperatures compared with the cases at low temperatures. The spectral intensity of Ge is enhanced by 1.5 times at 422.66 nm, and 3 times at589.33 nm when the sample temperature increases from 50°C to 300°C. We can obtain the same emission intensity by a more powerful laser or by less pulse energy with a higher sample temperature. Based on experimental observations we conclude that the preheated sample can improve the emission intensity of laser-induced semiconductor plasma spectroscopy.展开更多
基金supported by the National Natura Science Foundation of China(Nos.11674128,11474129and 11504129)the National 973 Program of China(No.2013CB922200)the China Postdoctoral Science Foundation(No.2014M551169)
文摘We investigate the temperature dependence of the emission spectrum of a laser-induced semiconductor（Ge and Si） plasma. The change in spectral intensity with the sample temperature indicates the change of the laser ablation mass. The reflectivity of the target surface is reduced as the sample is heated, which leads to an increase in the laser energy coupled to the surface of the sample and eventually produces a higher spectral intensity.The spectral intensities are enhanced by a few times at high temperatures compared with the cases at low temperatures. The spectral intensity of Ge is enhanced by 1.5 times at 422.66 nm, and 3 times at589.33 nm when the sample temperature increases from 50°C to 300°C. We can obtain the same emission intensity by a more powerful laser or by less pulse energy with a higher sample temperature. Based on experimental observations we conclude that the preheated sample can improve the emission intensity of laser-induced semiconductor plasma spectroscopy.
