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Integrative analysis reveals casing layer dynamics during Agaricus bisporus cultivation and the growth promoting effect of Pseudomonas putida AT130
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作者 Hongtu Li Zunjie Xi +6 位作者 Huayu Zhong Xiaoming Yan Tongtong Mo Qin Chen Dongdong Mu Xuefeng Wu Xingjiang Li 《Food Bioscience》 2026年第4期218-230,共13页
Agaricus bisporus is the most widely consumed edible mushroom and an important source of dietary protein and bioactive compounds.The casing layer plays a critical role in its cultivation,where microbial communities an... Agaricus bisporus is the most widely consumed edible mushroom and an important source of dietary protein and bioactive compounds.The casing layer plays a critical role in its cultivation,where microbial communities and metabolic activities strongly affect yield and quality,however,the stage-resolved research gap remains that it is still unclear which microbial and metabolic shifts in the casing layer are associated with primordia initiation and subsequent quality formation.In this study,the ecological and metabolic basis of mushroom quality formation was investigated by the combination of microbiome sequencing,non-targeted metabolomics,and functional genomics.Microbial communities exhibited stage-specific dynamics,with significant restructuring during primordia formation,when community cohesion and niche breadth reached their highest levels(0.68±0.06 and 4.48±1.05,respectively).A total of 1108 non-volatile metabolites were identified from metabolomic profiling.The adenosine and tryptophan exhibited significant changes and were enriched in energy and amino acid metabolism pathways.A representative strain,Pseudomonas putida AT130,was isolated from the genus Pseu-domonas.The gene clusters related to phosphate solubilization,potassium mobilization,lignin degradation,and indole-3-acetic acid biosynthesis were revealed by genome analysis with the multifunctional activities being confirmed through in vitro assays.Pot experiments further showed that AT130 inoculation improved mushroom performance,increasing fruiting body yield by 123.55%and enhancing nutritional traits(protein and soluble sugars increased,whereas ash decreased)relative to the control.These findings linked casing-layer microbiota with mushroom quality and identified AT130 as a promising food-grade bioinoculant to enhance A.bisporus nutritional value and productivity. 展开更多
关键词 Agaricus bisporus Microbial succession Ecological interactions Pseudomonas putida at130
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Influence of Tilted Angle on Effective Linear Energy Transfer in Single Event Effect Tests for Integrated Circuits at 130 nm Technology Node 被引量:2
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作者 张乐情 卢健 +5 位作者 胥佳灵 刘小年 戴丽华 徐依然 毕大炜 张正选 《Chinese Physics Letters》 SCIE CAS CSCD 2017年第11期119-122,共4页
A heavy-ion irradiation experiment is studied in digital storage cells with different design approaches in 130?nm CMOS bulk Si and silicon-on-insulator (SOI) technologies. The effectiveness of linear energy transf... A heavy-ion irradiation experiment is studied in digital storage cells with different design approaches in 130?nm CMOS bulk Si and silicon-on-insulator (SOI) technologies. The effectiveness of linear energy transfer (LET) with a tilted ion beam at the 130?nm technology node is obtained. Tests of tilted angles θ=0 ° , 30 ° and 60 ° with respect to the normal direction are performed under heavy-ion Kr with certain power whose LET is about 40?MeVcm 2 /mg at normal incidence. Error numbers in D flip-flop chains are used to determine their upset sensitivity at different incidence angles. It is indicated that the effective LETs for SOI and bulk Si are not exactly in inverse proportion to cosθ , furthermore the effective LET for SOI is more closely in inverse proportion to cosθ compared to bulk Si, which are also the well known behavior. It is interesting that, if we design the sample in the dual interlocked storage cell approach, the effective LET in bulk Si will look like inversely proportional to cosθ very well, which is also specifically explained. 展开更多
关键词 SOI Influence of Tilted Angle on Effective Linear Energy Transfer in Single Event Effect Tests for Integrated Circuits at 130 nm Tec
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