We investigate the origin of the 1/3 magnetization plateau in the S=1/2 kagome antiferromagnetic Heisenberg model using the variational Monte Carlo and exact diagonalization methods,to account for the recent experimen...We investigate the origin of the 1/3 magnetization plateau in the S=1/2 kagome antiferromagnetic Heisenberg model using the variational Monte Carlo and exact diagonalization methods,to account for the recent experimental observations in YCu_(3)(OH)_(6+x)Br_(3-x)and YCu_(3)(OD)_(6+x)Br_(3-x).We identify three degenerate valencebond-solid(VBS)states forming a√3×√3 unit cell.These states exhibit David-star patterns in the spin moment distribution with only two fractional values-1/3 and 2/3,and are related through translational transformations.While the spin correlations in these VBS states are found to be short-range,resembling a quantum spin liquid,we show that they have a vanishing topological entanglement entropy and thus are topologically trivial many-body states.Our theoretical results provide strong evidence that the 1/3 magnetization plateau observed in recent experiments arises from these√3×√3 VBS states with fractional spin moments.展开更多
就Bethuel,Brezis和Helein提出的问题讨论了Planar Ferromagnets and Antiferromagnets泛函在H={u(x)=(sinf(r)|xx|,cosf(r))∈H1(B1,S2);f(0)=0,f(1)=2π,r=|x|}中的径向极小元的一些性质,其中包括此泛函的径向极小元的零点的分布及若...就Bethuel,Brezis和Helein提出的问题讨论了Planar Ferromagnets and Antiferromagnets泛函在H={u(x)=(sinf(r)|xx|,cosf(r))∈H1(B1,S2);f(0)=0,f(1)=2π,r=|x|}中的径向极小元的一些性质,其中包括此泛函的径向极小元的零点的分布及若干个上界估计,并给出了这一问题的肯定回答.展开更多
A quantum spin liquid (QSL) is an exotic quantum ground state that does not break conventional symmetries and where the spins in the system remain dynamic down to zero temperature. Unlike a trivial paramagnetic state,...A quantum spin liquid (QSL) is an exotic quantum ground state that does not break conventional symmetries and where the spins in the system remain dynamic down to zero temperature. Unlike a trivial paramagnetic state, it features long-range quantum entanglement and supports fractionalized excitations.展开更多
Magnon-magnon coupling in synthetic antiferromagnets advances it as hybrid magnonic systems to explore the quantum information technologies.To induce magnon-magnon coupling,the parity symmetry between two magnetizatio...Magnon-magnon coupling in synthetic antiferromagnets advances it as hybrid magnonic systems to explore the quantum information technologies.To induce magnon-magnon coupling,the parity symmetry between two magnetization needs to be broken.Here we experimentally demonstrate a convenient method to break the parity symmetry by the asymmetric structure.We successfully introduce a magnon-magnon coupling in Ir-based synthetic antiferromagnets CoFeB(10 nm)/Ir(t_(Ir)=0.6 nm,1.2 nm)/CoFeB(13 nm).Remarkably,we find that the weakly uniaxial anisotropy field(-20 Oe)makes the magnon-magnon coupling anisotropic.The coupling strength presented by a characteristic anticrossing gap varies in the range between 0.54 GHz and 0.90 GHz for t_(Ir)=0.6 nm,and between 0.09 GHz and 1.4 GHz for t_(Ir)=1.2 nm.Our results demonstrate a feasible way to induce magnon-magnon coupling by an asymmetric structure and tune the coupling strength by varying the direction of in-plane magnetic field.The magnon-magnon coupling in this highly tunable material system could open exciting perspectives for exploring quantum-mechanical coupling phenomena.展开更多
Antiferromagnets offer considerable potential for electronic device applications. This article reviews recent demonstrations of spin manipulation in antiferromagnetic devices using applied electrical currents. Due to ...Antiferromagnets offer considerable potential for electronic device applications. This article reviews recent demonstrations of spin manipulation in antiferromagnetic devices using applied electrical currents. Due to spin–orbit coupling in environments with particular crystalline or structural symmetries, the electric current can induce an effective magnetic field with a sign that alternates on the lengthscale of the unit cell. The staggered effective field provides an efficient mechanism for switching antiferromagnetic domains and moving antiferromagnetic domain walls, with writing speeds in the terahertz regime.展开更多
To study the effects of lanthanide ions on the geometrically frustrated antiferromagnets and their magnetic properties,we grew high-quality single crystals of LnCu_(3)(OH)_(6)Br_(3)(Ln=Nd,Sm,and Eu)by hydrothermal met...To study the effects of lanthanide ions on the geometrically frustrated antiferromagnets and their magnetic properties,we grew high-quality single crystals of LnCu_(3)(OH)_(6)Br_(3)(Ln=Nd,Sm,and Eu)by hydrothermal method and studied their crystal structures and magnetic properties.The refinements of the crystal structure referred to the powder x-ray diffraction data show that LnCu_(3)(OH)_(6)Br_(3)adopt a Kapellasite-type layer structure,which is isostructural to their chlorine analogue.Magnetic susceptibilities demonstrate that LnCu_(3)(OH)_(6)Br_(3)have strong antiferromagnetic coupling and a pronounced magnetic frustration effect.Magnetization measurements indicate canted antiferromagnetic ordering of Cu^(2+)ions around 16 K within the kagoméplane and weak ferromagnetic coupling.Moreover,shoulder-like anomalies in specific heat around 16 K could be a signature of emergent of magnetic ordering.The low-temperature negative magnetization and specific heat of LnCu_(3)(OH)_(6)Br_(3)(Ln=Nd,Sm,and Eu)indicate that Ln^(3+)ions induce more exotic magnetic ground state properties.展开更多
Perpendicular synthetic-antiferromagnet(p-SAF) has broad applications in spin-transfer-torque magnetic random access memory and magnetic sensors. In this study, the p-SAF films consisting of (Co/Ni)3]/Ir(tIr)/[(Ni/Co)...Perpendicular synthetic-antiferromagnet(p-SAF) has broad applications in spin-transfer-torque magnetic random access memory and magnetic sensors. In this study, the p-SAF films consisting of (Co/Ni)3]/Ir(tIr)/[(Ni/Co)3are fabricated by magnetron sputtering technology. We study the domain structure and switching field distribution in p-SAF by changing the thickness of the infrared space layer. The strongest exchange coupling field(Hex) is observed when the thickness of Ir layer(tIr) is 0.7 nm and becoming weak according to the Ruderman–Kittel–Kasuya–Yosida-type coupling at 1.05 nm,2.1 nm, 4.55 nm, and 4.9 nm in sequence. Furthermore, the domain switching process between the upper Co/Ni stack and the bottom Co/Ni stack is different because of the antiferromagnet coupling. Compared with ferromagnet coupling films, the antiferromagnet samples possess three irreversible reversal regions in the first-order reversal curve distribution.With tIrincreasing, these irreversible reversal regions become denser and smaller. The results from this study will help us understand the details of the magnetization reversal process in the p-SAF.展开更多
Unconventional antiferromagnets(AFMs)with non-relativistic spin-splitting,such as the recently discovered altermagnet,have recently gained significant interest due to their potential for novel quantum phenomena and sp...Unconventional antiferromagnets(AFMs)with non-relativistic spin-splitting,such as the recently discovered altermagnet,have recently gained significant interest due to their potential for novel quantum phenomena and spintronic applications.The compensated magnetization in unconventional AFMs is protected by spin-space symmetries.In this work,we explore the symmetrybreaking effects and identify three distinct mechanisms for inducing net spin magnetizations in unconventional AFMs with collinear or non-collinear spins:(1)finite size effect,(2)extrinsic spin canting effect,and(3)irradiation with circularly polarized light.We show that the induced spin magnetizations are controllable and manifest as diverse intriguing phenomena.For the finite size system,the confined direction of a two-dimensional AM creates quantum-well-like subbands that determine the spin magnetization.This effect can be experimentally probed by measuring the spin density of states and the spin-polarization of Andreev-bound states within planar Josephson junctions.In the case of spin canting effect,it leads to peculiar anisotropic and non-monotonic behaviors in the superconducting proximity effect.Lastly,with circularly polarized light,spin magnetization is driven by the polarized light and the chirality of non-collinear magnetic order,thus offering a direct means of detecting the chirality of magnetic order in real materials.Our findings provide valuable insight into understanding and probing the spin magnetization in unconventional AFM materials.展开更多
In this paper,the global existence and uniqueness of a smooth solution to the periodic initial-value problem of the spin equations of antiferromagnets in 1 dimension are proved.
High-quality antiferromagnetic(AFM)θ-phase manganese nitride(MnN)films were successfully grown on MgO(001)substrates by plasma-assisted molecular beam epitaxy.Structural analysis confirms the high-quality MnN film ha...High-quality antiferromagnetic(AFM)θ-phase manganese nitride(MnN)films were successfully grown on MgO(001)substrates by plasma-assisted molecular beam epitaxy.Structural analysis confirms the high-quality MnN film has a tetragonal distortion with a c/a ratio of~0.98.The film exhibits exceptional stability in both aqueous and ambient conditions,which is a crucial factor for practical applications.Electrical transport reveals its metallic behavior with an upturn at low temperatures,which could be attributed to the Kondo effect originated from nitrogen vacancy-induced magnetic impurities.Room temperature exchange bias has been demonstrated in a MnN/CoFeB heterostructure,verifying the AFM ordering of MnN.Considering its high Néel temperature~650 K,superior stability,and low-cost,this work highlights the epitaxial MnN films as a promising candidate for AFM spintronic applications.展开更多
Exotic quantum spin liquid (QSL) states and fractionalized quasiparticles in frustrated magnets are of much current interest in theoretical and experimental studies of quantum magnetism. The kagome-lattice Heisenberg ...Exotic quantum spin liquid (QSL) states and fractionalized quasiparticles in frustrated magnets are of much current interest in theoretical and experimental studies of quantum magnetism. The kagome-lattice Heisenberg antiferromagnet (KAFM) provides a possible realization of just such novel topological states of matter. The kagome lattice shown in Fig. 1 is one of eleven Archimedean lattices in two spatial dimensions, where the word kagome itself means uweave pattera" in Japanese.展开更多
In this work,Ga-doped Ce RhIn_(5) single crystals are grown by In/Ga flux method.Single-crystal X-ray diffraction,magnetic susceptibility,specific heat,and neutron diffraction measurements are utilized to characterize...In this work,Ga-doped Ce RhIn_(5) single crystals are grown by In/Ga flux method.Single-crystal X-ray diffraction,magnetic susceptibility,specific heat,and neutron diffraction measurements are utilized to characterize the sample quality and the antiferromagnetic transition temperature T_(N).By substituting In with Ga,T_(N) is slightly decreased,but the antiferromagnetic transition peaks in magnetic susceptibility and specific heat measurements are obviously broadened by external field along c-axis.By comparing with Zn-doped Ce RhIn_(5),it can be concluded that T_(N) is dominated by electron density,and the stiffness of antiferromagnetic transition is obviously reduced by Ga substitution.The substitution effects of Ga are possibly caused by forming heterogeneous local structures,which avoids quantum critical point,superconductivity,and non-Fermi liquid states.Investigations on Gadoped Ce RhIn_(5) help to comprehend the chemical substitution effects in Ce RhIn_(5),and the interaction between heterogeneous structure and long-range antiferromagnetic states.展开更多
Multifunctional semiconductors play an important role in developing advanced photoelectric technologies.In this work,based on an octahedral replacement strategy in chalcogenides,a new selenide semiconductor NaMn_(3)Ga...Multifunctional semiconductors play an important role in developing advanced photoelectric technologies.In this work,based on an octahedral replacement strategy in chalcogenides,a new selenide semiconductor NaMn_(3)Ga_(3)Se_(8)was rationally designed,and synthesized by the flux method.The compound crystallizes in the noncentrosymmetric(NCS)P_(6)space group,and is composed of unique prismatic[NaSe_(6)],octahedral[MnSe_(6)]and tetrahedral[GaSe_(4)]motifs,inheriting the stable three-dimensional framework built by the octahedral and tetrahedral units in the A^(Ⅰ)Mg_(3)^(Ⅱ)C_(3)^(Ⅲ)Q_(8)^(Ⅵ)family.NaMn_(3)Ga_(3)Se_(8)shows the largest known secondary nonlinear optical(NLO)response of~2.1×AgGaS_(2)(AGS)in the A^(Ⅰ)Mg_(3)^(Ⅱ)C_(3)^(Ⅲ)Q_(8)^(Ⅵ)family,and a high laser-induced damage threshold of~3.0×AGS.Meanwhile,the introduction of Mn2t with unpaired 3d electrons induces a strong red emission band(685–805 nm)under the excitation source of 496 nm,as well as a paramagnetic to antiferromagnetic(AFM)transition at 7.3 K.The results confirm that NaMn_(3)Ga_(3)Se_(8)possesses multifunctional features including significant NLO response,fluorescence emission and AFM properties,and illustrate that replacing octahedral units with approaching size and geometry(like[MgSe_(6)]and[MnSe_(6)])could be a feasible way to develop multifunctional chalcogenides.展开更多
The ground-state magnetic ordering of uranium mononitride(UN)remains a contentious topic due to the unexpected lack of crystallographic distortion in the traditionally accepted 1k antiferromagnetic(AFM)state.This disc...The ground-state magnetic ordering of uranium mononitride(UN)remains a contentious topic due to the unexpected lack of crystallographic distortion in the traditionally accepted 1k antiferromagnetic(AFM)state.This discrepancy casts doubt on the validity of the 1k magnetic ordering of UN.Here,we investigate the crystal structure,high-pressure phase transitions,and dynamical and mechanical properties of UN in its 1k and 3k AFM ground states using density functional theory(DFT).Our results reveal that the undistorted 3k AFM state of Fm3m within the DFT+U+SOC scheme is more consistent with experimental results.The Hubbard U and spin-orbit coupling(SOC)are critical for accurately capturing the crystal structure,high-pressure structural phase transition,and dynamical properties of UN.In addition,we have identified a new high-pressure magnetic phase transition from the nonmagnetic(NM)phase of R3m to the P63/mmc AFM state.Electronic structure analysis reveals that the magnetic ordering in the ground state is primarily linked to variations in partial 5f orbital distributions.Our calculations provide valuable theoretical insights into the complex magnetic structures of a typical strongly correlated uranium-based compound.Moreover,they provide a framework for understanding other similar actinide systems.展开更多
Interlayer exchange coupling(IEC)plays a critical role in spin-orbit torque(SOT)switching in synthetic magnets.This work establishes a fundamental correlation between IEC and SOT dynamics within Co/Pt-based synthetic ...Interlayer exchange coupling(IEC)plays a critical role in spin-orbit torque(SOT)switching in synthetic magnets.This work establishes a fundamental correlation between IEC and SOT dynamics within Co/Pt-based synthetic antiferromagnets and synthetic ferromagnets.The antiferromagnetic and ferromagnetic coupling states are precisely engineered through Ruderman-Kittel-Kasuya-Yosida(RKKY)interactions by modulating the Ir spacer thickness.Experimental results reveal that the critical switching current density exhibits a strong positive correlation with the IEC strength,regardless of the coupling type.A comprehensive theoretical framework based on the Landau-Lifshitz-Gilbert equation elucidates how IEC contributes to the effective energy barrier that must be overcome during SOT-induced magnetization switching.Significantly,the antiferromagnetically coupled samples demonstrate enhanced SOT efficiency,with the spin Hall angle being directly proportional to the antiferromagnetic exchange coupling field.These insights establish a coherent physical paradigm for understanding IEC-dependent SOT dynamics and provide strategic design principles for the development of energy-efficient next-generation spintronic devices.展开更多
Antiferromagnetic(AFM)spintronics have sparked extensive research interest in the field of information storage due to the considerable advantages offered by antiferromagnets,including non-volatile data storage,higher ...Antiferromagnetic(AFM)spintronics have sparked extensive research interest in the field of information storage due to the considerable advantages offered by antiferromagnets,including non-volatile data storage,higher storage density,and accelerating data processing.However,the manipulation and detection of internal AFM order in antiferromagnets hinders their applications in spintronic devices.Here,we proposed a design idea for an AFM material that is self-assembled from one-dimensional(1D)ferromagnetic(FM)chains.To validate this idea,we screened a two-dimensional(2D)selfassembled CrBr_(2)antiferromagnet of an AFM semiconductor from a large amount of data.This 2D CrBr_(2)antiferromagnet is composed of 1D FM CrBr_(2)chains that are arranged in a staggered and parallel configuration.In this type of antiferromagnet,the write-data operation of information is achieved in 1D FM chains,followed by a self-assembly process driving the assembly of 1D FM chains into an antiferromagnet.These constituent 1D FM chains become decoupled by external perturbations,such as heat,pressure,strain,etc.,thereby realizing the read-data operation of information.We anticipate that this antiferromagnet,composed of 1D FM chains,can be realized not only in the 1D to 2D system,but also is expected to expand to 2D to three-dimensional(3D)system,and even 1D to 3D system.展开更多
The angular dependence of magnetoresistance(MR)in antiferromagnetic half-Heusler HoAuSn single crystals has been systematically studied.Negative MR,as large as~99%,is observed at 9 T,is not restricted to the specific ...The angular dependence of magnetoresistance(MR)in antiferromagnetic half-Heusler HoAuSn single crystals has been systematically studied.Negative MR,as large as~99%,is observed at 9 T,is not restricted to the specific configuration of applied magnetics fields and current and can persist up to 20 K,much higher than the Ne'el temperature(T_(N)≈1.9 K).Experiments and first-principles calculations suggest that the observed large negative MR is derived from a magnetic field that reconstructs the band structure and induces a Weyl point,which changes the carrier concentration.展开更多
The competition between dimensionality and ordering in multiferroic materials is of great interest for both fundamental physics and potential applications. Combining first-principles calculations with micromagnetic si...The competition between dimensionality and ordering in multiferroic materials is of great interest for both fundamental physics and potential applications. Combining first-principles calculations with micromagnetic simulations, we investigate recently synthesized ultrathin perovskite bismuth ferrite(BFO) films. Our numerical results reveal that, at the monolayer limit, the ferroelectricity of BFO is missing because the octahedral distortions are constrained. However, the monolayer bismuth ferrite is a topological antiferromagnetic metal with tunable bimeron magnetic structure. The dual topologically non-trivial characteristics make monolayer bismuth ferrite a multifunctional building block in future spintronic devices.展开更多
We report the magnetic and transport properties of EuBi_(2) single crystal. EuBi_(2) exhibits complex magnetic behavior at low temperatures. In both the in-plane and out-of-plane directions, three antiferromagnetic(AF...We report the magnetic and transport properties of EuBi_(2) single crystal. EuBi_(2) exhibits complex magnetic behavior at low temperatures. In both the in-plane and out-of-plane directions, three antiferromagnetic(AFM) transitions have been observed at T_(N1)~18.9 K, T_(N2)~7.0 K, and T_(N3)~3.1 K. Among them, the transitions at T_(N2) and T_(N3) represent the canted AFM orders with ferromagnetic components. As the magnetic field increases, the transition at T_(N3) is rapidly suppressed to disappearance. However, the transitions at T_(N1) and T_(N2) persist until high fields and their signatures can also be reflected in the resistivity and specific heat. Above the magnetic transition temperature T_(N1), the resistivity of EuBi_(2) increases linearly with temperature, exhibiting the strange-metal behavior. In the magnetically ordered region below T_(N1), EuBi_(2) exhibits the weak antilocalization(WAL) effect and large magnetoresistance(475% at 1.8 K and 14 T). It is suggested that the magnetic ordering significantly enhances the spin–orbital coupling interaction and induces the WAL effect.展开更多
The intrinsic antiferromagnetic topological insulators in the Mn-Bi-Te family,composed of superlattice-like MnBi_(2)Te_(4)/(Bi_(2)Te_(3))_(n)(n=0,1,2,3,...)layered structure,present intriguing states of matter such as...The intrinsic antiferromagnetic topological insulators in the Mn-Bi-Te family,composed of superlattice-like MnBi_(2)Te_(4)/(Bi_(2)Te_(3))_(n)(n=0,1,2,3,...)layered structure,present intriguing states of matter such as quantum anomalous Hall effect and the axion insulator.However,the surface state gap,which is the prerequisite for the observation of these states,remains elusive.Here by molecular beam epitaxy,we obtain two types of MnBi_(4)Te_(7)films with the exclusive Bi_(2)Te_(3)(BT)or MnBi_(2)Te_(4)(MBT)terminations.By scanning tunneling spectroscopy,the mass terms in the surface states are identified on both surface terminations.Experimental results reveal the existence of a hybridization gap of approximately 23 meV in surface states on the BT termination.This gap comes from the hybridization between the surface states and the spin-split states in the adjacent MBT layer.On the MBT termination,an exchange mass term of about 28±2 meV in surface states is identified by taking magnetic-field-dependent Landau level spectra as well as theoretical simulations.In addition,the mass term varies with the field in the film with a heavy BiMn doping level in the Mn layers.These findings demonstrate the existence of mass terms in surface states on both types of terminations in our epitaxial MnBi_(4)Te_(7)films investigated by local probes.展开更多
基金supported by the National Key Projects for Research and Development of China(Grant Nos.2021YFA1400400 and 2024YFA1408104)the National Natural Science Foundation of China(Grant Nos.12434005,12374137,and 92165205).
文摘We investigate the origin of the 1/3 magnetization plateau in the S=1/2 kagome antiferromagnetic Heisenberg model using the variational Monte Carlo and exact diagonalization methods,to account for the recent experimental observations in YCu_(3)(OH)_(6+x)Br_(3-x)and YCu_(3)(OD)_(6+x)Br_(3-x).We identify three degenerate valencebond-solid(VBS)states forming a√3×√3 unit cell.These states exhibit David-star patterns in the spin moment distribution with only two fractional values-1/3 and 2/3,and are related through translational transformations.While the spin correlations in these VBS states are found to be short-range,resembling a quantum spin liquid,we show that they have a vanishing topological entanglement entropy and thus are topologically trivial many-body states.Our theoretical results provide strong evidence that the 1/3 magnetization plateau observed in recent experiments arises from these√3×√3 VBS states with fractional spin moments.
文摘就Bethuel,Brezis和Helein提出的问题讨论了Planar Ferromagnets and Antiferromagnets泛函在H={u(x)=(sinf(r)|xx|,cosf(r))∈H1(B1,S2);f(0)=0,f(1)=2π,r=|x|}中的径向极小元的一些性质,其中包括此泛函的径向极小元的零点的分布及若干个上界估计,并给出了这一问题的肯定回答.
文摘A quantum spin liquid (QSL) is an exotic quantum ground state that does not break conventional symmetries and where the spins in the system remain dynamic down to zero temperature. Unlike a trivial paramagnetic state, it features long-range quantum entanglement and supports fractionalized excitations.
基金Supported by the National Natural Science Foundation of China (Grant Nos.51871235,51671212,52031014,51771198,and51801212)the National Key Research and Development Program of China (Grant Nos.2016YFA0300701,2017YFB0702702,and2017YA0206302)+2 种基金the Key Research Program of Frontier Sciences,CAS (Grant Nos.QYZDJ-SSW-JSC023,KJZD-SW-M01ZDYZ2012-2)support from the Natural Science Foundation for Distinguished Young Scholars of Hebei Province of China (S&T Program of Hebei,Grant No.A2019205310)。
文摘Magnon-magnon coupling in synthetic antiferromagnets advances it as hybrid magnonic systems to explore the quantum information technologies.To induce magnon-magnon coupling,the parity symmetry between two magnetization needs to be broken.Here we experimentally demonstrate a convenient method to break the parity symmetry by the asymmetric structure.We successfully introduce a magnon-magnon coupling in Ir-based synthetic antiferromagnets CoFeB(10 nm)/Ir(t_(Ir)=0.6 nm,1.2 nm)/CoFeB(13 nm).Remarkably,we find that the weakly uniaxial anisotropy field(-20 Oe)makes the magnon-magnon coupling anisotropic.The coupling strength presented by a characteristic anticrossing gap varies in the range between 0.54 GHz and 0.90 GHz for t_(Ir)=0.6 nm,and between 0.09 GHz and 1.4 GHz for t_(Ir)=1.2 nm.Our results demonstrate a feasible way to induce magnon-magnon coupling by an asymmetric structure and tune the coupling strength by varying the direction of in-plane magnetic field.The magnon-magnon coupling in this highly tunable material system could open exciting perspectives for exploring quantum-mechanical coupling phenomena.
基金Project supported by EPSRC(Grant No.EP/P019749/1)support from the Royal Society through a University Research Fellowship
文摘Antiferromagnets offer considerable potential for electronic device applications. This article reviews recent demonstrations of spin manipulation in antiferromagnetic devices using applied electrical currents. Due to spin–orbit coupling in environments with particular crystalline or structural symmetries, the electric current can induce an effective magnetic field with a sign that alternates on the lengthscale of the unit cell. The staggered effective field provides an efficient mechanism for switching antiferromagnetic domains and moving antiferromagnetic domain walls, with writing speeds in the terahertz regime.
基金Project supported by the Natural Science Foundation of Anhui Province,China(Grant Nos.2108085MA16 and2108085QA22)the Key Project of Anhui Provincial Department of Education(Grant No.KJ2020A0013)+1 种基金the Key Project of the Foundation of Anhui Education Committee,China(Grant No.2022AH050066)the National Natural Science Foundation of China(Grant Nos.U1832209,11874336,12274338,12104010,12104011,52102333,and 12004003)。
文摘To study the effects of lanthanide ions on the geometrically frustrated antiferromagnets and their magnetic properties,we grew high-quality single crystals of LnCu_(3)(OH)_(6)Br_(3)(Ln=Nd,Sm,and Eu)by hydrothermal method and studied their crystal structures and magnetic properties.The refinements of the crystal structure referred to the powder x-ray diffraction data show that LnCu_(3)(OH)_(6)Br_(3)adopt a Kapellasite-type layer structure,which is isostructural to their chlorine analogue.Magnetic susceptibilities demonstrate that LnCu_(3)(OH)_(6)Br_(3)have strong antiferromagnetic coupling and a pronounced magnetic frustration effect.Magnetization measurements indicate canted antiferromagnetic ordering of Cu^(2+)ions around 16 K within the kagoméplane and weak ferromagnetic coupling.Moreover,shoulder-like anomalies in specific heat around 16 K could be a signature of emergent of magnetic ordering.The low-temperature negative magnetization and specific heat of LnCu_(3)(OH)_(6)Br_(3)(Ln=Nd,Sm,and Eu)indicate that Ln^(3+)ions induce more exotic magnetic ground state properties.
基金Project supported by the Natural Science Foundation of Gansu Province, China (Grant No. 22JR5RA775)the Science and Technology Program of Lanzhou, China (Grant No. 2021-1-157)+2 种基金the Guangdong Basic and Applied Basic Research Foundation, China (Grant Nos. 2020A1515110998 and 2022A1515012123)the Outstanding Youth Foundation of Gansu Academy of Science, China (Grant No. 2021YQ01)the Innovative Team Construction Project of Gansu Academy of Sciences, China (Grant No. 2020CX005-01)。
文摘Perpendicular synthetic-antiferromagnet(p-SAF) has broad applications in spin-transfer-torque magnetic random access memory and magnetic sensors. In this study, the p-SAF films consisting of (Co/Ni)3]/Ir(tIr)/[(Ni/Co)3are fabricated by magnetron sputtering technology. We study the domain structure and switching field distribution in p-SAF by changing the thickness of the infrared space layer. The strongest exchange coupling field(Hex) is observed when the thickness of Ir layer(tIr) is 0.7 nm and becoming weak according to the Ruderman–Kittel–Kasuya–Yosida-type coupling at 1.05 nm,2.1 nm, 4.55 nm, and 4.9 nm in sequence. Furthermore, the domain switching process between the upper Co/Ni stack and the bottom Co/Ni stack is different because of the antiferromagnet coupling. Compared with ferromagnet coupling films, the antiferromagnet samples possess three irreversible reversal regions in the first-order reversal curve distribution.With tIrincreasing, these irreversible reversal regions become denser and smaller. The results from this study will help us understand the details of the magnetization reversal process in the p-SAF.
基金the support of the startup funds at HFNLthe Innovation Program for Quantum Science and Technology(Grant No.2021ZD0302800)+3 种基金Anhui Initiative in Quantum Information Technologies(Grant No.AHY170000)supported by the start-up of Zhejiang Universitythe Fundamental Research Funds for the Central Universities(Grant No.226-2024-00068)funded by the Jane and Aatos Erkko Foundation and the Keele Foundation as part of the SuperC collaboration。
文摘Unconventional antiferromagnets(AFMs)with non-relativistic spin-splitting,such as the recently discovered altermagnet,have recently gained significant interest due to their potential for novel quantum phenomena and spintronic applications.The compensated magnetization in unconventional AFMs is protected by spin-space symmetries.In this work,we explore the symmetrybreaking effects and identify three distinct mechanisms for inducing net spin magnetizations in unconventional AFMs with collinear or non-collinear spins:(1)finite size effect,(2)extrinsic spin canting effect,and(3)irradiation with circularly polarized light.We show that the induced spin magnetizations are controllable and manifest as diverse intriguing phenomena.For the finite size system,the confined direction of a two-dimensional AM creates quantum-well-like subbands that determine the spin magnetization.This effect can be experimentally probed by measuring the spin density of states and the spin-polarization of Andreev-bound states within planar Josephson junctions.In the case of spin canting effect,it leads to peculiar anisotropic and non-monotonic behaviors in the superconducting proximity effect.Lastly,with circularly polarized light,spin magnetization is driven by the polarized light and the chirality of non-collinear magnetic order,thus offering a direct means of detecting the chirality of magnetic order in real materials.Our findings provide valuable insight into understanding and probing the spin magnetization in unconventional AFM materials.
基金supported by the Natural Science Foundation of China(No.19971030)the Natural Science Foundation of Guangdong(No.000671,No.031495)
文摘In this paper,the global existence and uniqueness of a smooth solution to the periodic initial-value problem of the spin equations of antiferromagnets in 1 dimension are proved.
文摘High-quality antiferromagnetic(AFM)θ-phase manganese nitride(MnN)films were successfully grown on MgO(001)substrates by plasma-assisted molecular beam epitaxy.Structural analysis confirms the high-quality MnN film has a tetragonal distortion with a c/a ratio of~0.98.The film exhibits exceptional stability in both aqueous and ambient conditions,which is a crucial factor for practical applications.Electrical transport reveals its metallic behavior with an upturn at low temperatures,which could be attributed to the Kondo effect originated from nitrogen vacancy-induced magnetic impurities.Room temperature exchange bias has been demonstrated in a MnN/CoFeB heterostructure,verifying the AFM ordering of MnN.Considering its high Néel temperature~650 K,superior stability,and low-cost,this work highlights the epitaxial MnN films as a promising candidate for AFM spintronic applications.
文摘Exotic quantum spin liquid (QSL) states and fractionalized quasiparticles in frustrated magnets are of much current interest in theoretical and experimental studies of quantum magnetism. The kagome-lattice Heisenberg antiferromagnet (KAFM) provides a possible realization of just such novel topological states of matter. The kagome lattice shown in Fig. 1 is one of eleven Archimedean lattices in two spatial dimensions, where the word kagome itself means uweave pattera" in Japanese.
基金supported by the National Key Research and Development Program of China(Grant No.2022YFA1402203)the National Natural Science Foundations of China(Grant Nos.12174065 and 12104424)the Shanghai Municipal Science and Technology(Grant No.2019SHZDZX01)。
文摘In this work,Ga-doped Ce RhIn_(5) single crystals are grown by In/Ga flux method.Single-crystal X-ray diffraction,magnetic susceptibility,specific heat,and neutron diffraction measurements are utilized to characterize the sample quality and the antiferromagnetic transition temperature T_(N).By substituting In with Ga,T_(N) is slightly decreased,but the antiferromagnetic transition peaks in magnetic susceptibility and specific heat measurements are obviously broadened by external field along c-axis.By comparing with Zn-doped Ce RhIn_(5),it can be concluded that T_(N) is dominated by electron density,and the stiffness of antiferromagnetic transition is obviously reduced by Ga substitution.The substitution effects of Ga are possibly caused by forming heterogeneous local structures,which avoids quantum critical point,superconductivity,and non-Fermi liquid states.Investigations on Gadoped Ce RhIn_(5) help to comprehend the chemical substitution effects in Ce RhIn_(5),and the interaction between heterogeneous structure and long-range antiferromagnetic states.
基金supported by the Natural Science Foundation of the Xinjiang Uygur Autonomous Region(2024D01E30)the Strategic Priority Research Program of the Chinese Academy of Sciences(XDB0880000)+1 种基金the Open Fund of the Anhui Key Laboratory of Photonic Materials and Devices(AHKL2024KF02)the National Natural Science Foundation of China(22475234,22335007,22193044 and 22361132544).
文摘Multifunctional semiconductors play an important role in developing advanced photoelectric technologies.In this work,based on an octahedral replacement strategy in chalcogenides,a new selenide semiconductor NaMn_(3)Ga_(3)Se_(8)was rationally designed,and synthesized by the flux method.The compound crystallizes in the noncentrosymmetric(NCS)P_(6)space group,and is composed of unique prismatic[NaSe_(6)],octahedral[MnSe_(6)]and tetrahedral[GaSe_(4)]motifs,inheriting the stable three-dimensional framework built by the octahedral and tetrahedral units in the A^(Ⅰ)Mg_(3)^(Ⅱ)C_(3)^(Ⅲ)Q_(8)^(Ⅵ)family.NaMn_(3)Ga_(3)Se_(8)shows the largest known secondary nonlinear optical(NLO)response of~2.1×AgGaS_(2)(AGS)in the A^(Ⅰ)Mg_(3)^(Ⅱ)C_(3)^(Ⅲ)Q_(8)^(Ⅵ)family,and a high laser-induced damage threshold of~3.0×AGS.Meanwhile,the introduction of Mn2t with unpaired 3d electrons induces a strong red emission band(685–805 nm)under the excitation source of 496 nm,as well as a paramagnetic to antiferromagnetic(AFM)transition at 7.3 K.The results confirm that NaMn_(3)Ga_(3)Se_(8)possesses multifunctional features including significant NLO response,fluorescence emission and AFM properties,and illustrate that replacing octahedral units with approaching size and geometry(like[MgSe_(6)]and[MnSe_(6)])could be a feasible way to develop multifunctional chalcogenides.
基金supported by the National Natural Science Foundation of China(Grant Nos.12204482 and U2430211)the Scientific and Technological Innovation Programs of Higher Education Institutions in Shanxi(Grant No.2020L0537)the Fundamental Research Program of Shanxi Province(Grant No.202103021224250)the Hainan Provincial Natural Science Foundation of China(Grant No.225MS076).
文摘The ground-state magnetic ordering of uranium mononitride(UN)remains a contentious topic due to the unexpected lack of crystallographic distortion in the traditionally accepted 1k antiferromagnetic(AFM)state.This discrepancy casts doubt on the validity of the 1k magnetic ordering of UN.Here,we investigate the crystal structure,high-pressure phase transitions,and dynamical and mechanical properties of UN in its 1k and 3k AFM ground states using density functional theory(DFT).Our results reveal that the undistorted 3k AFM state of Fm3m within the DFT+U+SOC scheme is more consistent with experimental results.The Hubbard U and spin-orbit coupling(SOC)are critical for accurately capturing the crystal structure,high-pressure structural phase transition,and dynamical properties of UN.In addition,we have identified a new high-pressure magnetic phase transition from the nonmagnetic(NM)phase of R3m to the P63/mmc AFM state.Electronic structure analysis reveals that the magnetic ordering in the ground state is primarily linked to variations in partial 5f orbital distributions.Our calculations provide valuable theoretical insights into the complex magnetic structures of a typical strongly correlated uranium-based compound.Moreover,they provide a framework for understanding other similar actinide systems.
基金Project supported by the“Pioneer”and“Leading Goose”R&D Program of Zhejiang Province(Grant No.2022C01053)the Key Research and Development Program of Zhejiang Province(Grant No.2021C01039)+1 种基金the National Natural Science Foundation of China(Grant No.62293493)the Natural Science Foundation of Zhejiang Province,China(Grant No.LQ21A050001)。
文摘Interlayer exchange coupling(IEC)plays a critical role in spin-orbit torque(SOT)switching in synthetic magnets.This work establishes a fundamental correlation between IEC and SOT dynamics within Co/Pt-based synthetic antiferromagnets and synthetic ferromagnets.The antiferromagnetic and ferromagnetic coupling states are precisely engineered through Ruderman-Kittel-Kasuya-Yosida(RKKY)interactions by modulating the Ir spacer thickness.Experimental results reveal that the critical switching current density exhibits a strong positive correlation with the IEC strength,regardless of the coupling type.A comprehensive theoretical framework based on the Landau-Lifshitz-Gilbert equation elucidates how IEC contributes to the effective energy barrier that must be overcome during SOT-induced magnetization switching.Significantly,the antiferromagnetically coupled samples demonstrate enhanced SOT efficiency,with the spin Hall angle being directly proportional to the antiferromagnetic exchange coupling field.These insights establish a coherent physical paradigm for understanding IEC-dependent SOT dynamics and provide strategic design principles for the development of energy-efficient next-generation spintronic devices.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.12435001,12304006,and 12404265)the Natural Science Foundation of Shanghai,China(Grant No.23JC1401400)+1 种基金the Fundamental Research Funds for the Central Universities of East China University,the Natural Science Foundation of WIUCAS(Grant No.WIUCASQD2023004)the Natural Science Foundation of Wenzhou(Grant No.L2023005)。
文摘Antiferromagnetic(AFM)spintronics have sparked extensive research interest in the field of information storage due to the considerable advantages offered by antiferromagnets,including non-volatile data storage,higher storage density,and accelerating data processing.However,the manipulation and detection of internal AFM order in antiferromagnets hinders their applications in spintronic devices.Here,we proposed a design idea for an AFM material that is self-assembled from one-dimensional(1D)ferromagnetic(FM)chains.To validate this idea,we screened a two-dimensional(2D)selfassembled CrBr_(2)antiferromagnet of an AFM semiconductor from a large amount of data.This 2D CrBr_(2)antiferromagnet is composed of 1D FM CrBr_(2)chains that are arranged in a staggered and parallel configuration.In this type of antiferromagnet,the write-data operation of information is achieved in 1D FM chains,followed by a self-assembly process driving the assembly of 1D FM chains into an antiferromagnet.These constituent 1D FM chains become decoupled by external perturbations,such as heat,pressure,strain,etc.,thereby realizing the read-data operation of information.We anticipate that this antiferromagnet,composed of 1D FM chains,can be realized not only in the 1D to 2D system,but also is expected to expand to 2D to three-dimensional(3D)system,and even 1D to 3D system.
基金financially supported by the National Key R&D Program of China(No.2022YFA1402600)the National Natural Science Foundation of China(Nos.12304150 and 52161135108)support by the National Science Centre(Poland)(No.2021/40/Q/ST5/00066)。
文摘The angular dependence of magnetoresistance(MR)in antiferromagnetic half-Heusler HoAuSn single crystals has been systematically studied.Negative MR,as large as~99%,is observed at 9 T,is not restricted to the specific configuration of applied magnetics fields and current and can persist up to 20 K,much higher than the Ne'el temperature(T_(N)≈1.9 K).Experiments and first-principles calculations suggest that the observed large negative MR is derived from a magnetic field that reconstructs the band structure and induces a Weyl point,which changes the carrier concentration.
基金supported by the National Natural Science Foundation of China (Grant No. 12174382)the Strategic Priority Research Program of the Chinese Academy of Sciences (Grant Nos. XDB0460000 and XDB28000000)the Innovation Program for Quantum Science and Technology (Grant Nos. 2024ZD0300104 and 2021ZD0302600)。
文摘The competition between dimensionality and ordering in multiferroic materials is of great interest for both fundamental physics and potential applications. Combining first-principles calculations with micromagnetic simulations, we investigate recently synthesized ultrathin perovskite bismuth ferrite(BFO) films. Our numerical results reveal that, at the monolayer limit, the ferroelectricity of BFO is missing because the octahedral distortions are constrained. However, the monolayer bismuth ferrite is a topological antiferromagnetic metal with tunable bimeron magnetic structure. The dual topologically non-trivial characteristics make monolayer bismuth ferrite a multifunctional building block in future spintronic devices.
基金Project supported by the National Key Research and Development Program of China (Grant No. 2023YFA1406500)the National Natural Science Foundation of China (Grant Nos. 12474098, 12274388, 12174361, 12404191, 52102333, 12404043, and 12204004)the Natural Science Foundation of Anhui Province (Grant No. 2408085QA024)。
文摘We report the magnetic and transport properties of EuBi_(2) single crystal. EuBi_(2) exhibits complex magnetic behavior at low temperatures. In both the in-plane and out-of-plane directions, three antiferromagnetic(AFM) transitions have been observed at T_(N1)~18.9 K, T_(N2)~7.0 K, and T_(N3)~3.1 K. Among them, the transitions at T_(N2) and T_(N3) represent the canted AFM orders with ferromagnetic components. As the magnetic field increases, the transition at T_(N3) is rapidly suppressed to disappearance. However, the transitions at T_(N1) and T_(N2) persist until high fields and their signatures can also be reflected in the resistivity and specific heat. Above the magnetic transition temperature T_(N1), the resistivity of EuBi_(2) increases linearly with temperature, exhibiting the strange-metal behavior. In the magnetically ordered region below T_(N1), EuBi_(2) exhibits the weak antilocalization(WAL) effect and large magnetoresistance(475% at 1.8 K and 14 T). It is suggested that the magnetic ordering significantly enhances the spin–orbital coupling interaction and induces the WAL effect.
基金supported by the National Key R&D Program of China(Grant No.2022YFA1403102)the National Natural Science Foundation of China(Grant Nos.12474478,92065102,and 61804056).
文摘The intrinsic antiferromagnetic topological insulators in the Mn-Bi-Te family,composed of superlattice-like MnBi_(2)Te_(4)/(Bi_(2)Te_(3))_(n)(n=0,1,2,3,...)layered structure,present intriguing states of matter such as quantum anomalous Hall effect and the axion insulator.However,the surface state gap,which is the prerequisite for the observation of these states,remains elusive.Here by molecular beam epitaxy,we obtain two types of MnBi_(4)Te_(7)films with the exclusive Bi_(2)Te_(3)(BT)or MnBi_(2)Te_(4)(MBT)terminations.By scanning tunneling spectroscopy,the mass terms in the surface states are identified on both surface terminations.Experimental results reveal the existence of a hybridization gap of approximately 23 meV in surface states on the BT termination.This gap comes from the hybridization between the surface states and the spin-split states in the adjacent MBT layer.On the MBT termination,an exchange mass term of about 28±2 meV in surface states is identified by taking magnetic-field-dependent Landau level spectra as well as theoretical simulations.In addition,the mass term varies with the field in the film with a heavy BiMn doping level in the Mn layers.These findings demonstrate the existence of mass terms in surface states on both types of terminations in our epitaxial MnBi_(4)Te_(7)films investigated by local probes.
