In this work,Ga-doped Ce RhIn_(5) single crystals are grown by In/Ga flux method.Single-crystal X-ray diffraction,magnetic susceptibility,specific heat,and neutron diffraction measurements are utilized to characterize...In this work,Ga-doped Ce RhIn_(5) single crystals are grown by In/Ga flux method.Single-crystal X-ray diffraction,magnetic susceptibility,specific heat,and neutron diffraction measurements are utilized to characterize the sample quality and the antiferromagnetic transition temperature T_(N).By substituting In with Ga,T_(N) is slightly decreased,but the antiferromagnetic transition peaks in magnetic susceptibility and specific heat measurements are obviously broadened by external field along c-axis.By comparing with Zn-doped Ce RhIn_(5),it can be concluded that T_(N) is dominated by electron density,and the stiffness of antiferromagnetic transition is obviously reduced by Ga substitution.The substitution effects of Ga are possibly caused by forming heterogeneous local structures,which avoids quantum critical point,superconductivity,and non-Fermi liquid states.Investigations on Gadoped Ce RhIn_(5) help to comprehend the chemical substitution effects in Ce RhIn_(5),and the interaction between heterogeneous structure and long-range antiferromagnetic states.展开更多
We investigate the origin of the 1/3 magnetization plateau in the S=1/2 kagome antiferromagnetic Heisenberg model using the variational Monte Carlo and exact diagonalization methods,to account for the recent experimen...We investigate the origin of the 1/3 magnetization plateau in the S=1/2 kagome antiferromagnetic Heisenberg model using the variational Monte Carlo and exact diagonalization methods,to account for the recent experimental observations in YCu_(3)(OH)_(6+x)Br_(3-x)and YCu_(3)(OD)_(6+x)Br_(3-x).We identify three degenerate valencebond-solid(VBS)states forming a√3×√3 unit cell.These states exhibit David-star patterns in the spin moment distribution with only two fractional values-1/3 and 2/3,and are related through translational transformations.While the spin correlations in these VBS states are found to be short-range,resembling a quantum spin liquid,we show that they have a vanishing topological entanglement entropy and thus are topologically trivial many-body states.Our theoretical results provide strong evidence that the 1/3 magnetization plateau observed in recent experiments arises from these√3×√3 VBS states with fractional spin moments.展开更多
SrRuO_(3)is a canonical itinerant ferromagnet,yet its properties in the extreme two-dimensional limit on a(111)crystal plane remain largely unexplored.Here,we demonstrate a complete transformation of its ground state ...SrRuO_(3)is a canonical itinerant ferromagnet,yet its properties in the extreme two-dimensional limit on a(111)crystal plane remain largely unexplored.Here,we demonstrate a complete transformation of its ground state driven by dimensional reduction.As the thickness of(111)-oriented SrRuO_(3)films is reduced to a few unit cells,the system transitions from a metallic ferromagnet to a semiconducting antiferromagnet.This emergent antiferromagnetism is evidenced by a vanishing magnetic remanence and most strikingly,by the appearance of an unconventional twelve-fold anisotropic magnetoresistance.First-principles calculations confirm that an A-type antiferromagnetic order is the stable ground state in the ultrathin limit.Our findings establish(111)dimensional engineering as a powerful route to manipulate correlated electron states and uncover novel functionalities for antiferromagnetic spintronics.展开更多
High-quality antiferromagnetic(AFM)θ-phase manganese nitride(MnN)films were successfully grown on MgO(001)substrates by plasma-assisted molecular beam epitaxy.Structural analysis confirms the high-quality MnN film ha...High-quality antiferromagnetic(AFM)θ-phase manganese nitride(MnN)films were successfully grown on MgO(001)substrates by plasma-assisted molecular beam epitaxy.Structural analysis confirms the high-quality MnN film has a tetragonal distortion with a c/a ratio of~0.98.The film exhibits exceptional stability in both aqueous and ambient conditions,which is a crucial factor for practical applications.Electrical transport reveals its metallic behavior with an upturn at low temperatures,which could be attributed to the Kondo effect originated from nitrogen vacancy-induced magnetic impurities.Room temperature exchange bias has been demonstrated in a MnN/CoFeB heterostructure,verifying the AFM ordering of MnN.Considering its high Néel temperature~650 K,superior stability,and low-cost,this work highlights the epitaxial MnN films as a promising candidate for AFM spintronic applications.展开更多
In antiferromagnets,dipolar coupling is often disregarded due to the cancellation of magnetic moments between the two sublattices,so that the spin-wave dispersion is predominantly determined by exchange interactions.H...In antiferromagnets,dipolar coupling is often disregarded due to the cancellation of magnetic moments between the two sublattices,so that the spin-wave dispersion is predominantly determined by exchange interactions.However,antiferromagnetic spin waves typically involve a slight misalignment of the magnetic moments on the sublattices,which gives rise to a small net magnetization enabling long-range dipolar coupling.In this paper,we investigate the role of dipolar coupling in spin-wave excitations and its influence on the resulting dispersion.Our findings show that:(i)when the Néel vector is perpendicular to the film plane or lies within the film plane and parallel to the wave vector,the dispersion branches can be divided into two groups:those unaffected by the dipolar field and those influenced by it.In these cases,the total magnetic moment remains linearly polarized,but the polarization directions differ between the two types of branches;(ii)when the Néel vector lies in the film plane and is perpendicular to the wave vector,the dipolar interactions affect both types of dispersion branches,leading to their hybridization.This hybridization alters the polarization of the magnetic moment,resulting in elliptical polarization.展开更多
Antiferromagnetic(AFM)spintronics have sparked extensive research interest in the field of information storage due to the considerable advantages offered by antiferromagnets,including non-volatile data storage,higher ...Antiferromagnetic(AFM)spintronics have sparked extensive research interest in the field of information storage due to the considerable advantages offered by antiferromagnets,including non-volatile data storage,higher storage density,and accelerating data processing.However,the manipulation and detection of internal AFM order in antiferromagnets hinders their applications in spintronic devices.Here,we proposed a design idea for an AFM material that is self-assembled from one-dimensional(1D)ferromagnetic(FM)chains.To validate this idea,we screened a two-dimensional(2D)selfassembled CrBr_(2)antiferromagnet of an AFM semiconductor from a large amount of data.This 2D CrBr_(2)antiferromagnet is composed of 1D FM CrBr_(2)chains that are arranged in a staggered and parallel configuration.In this type of antiferromagnet,the write-data operation of information is achieved in 1D FM chains,followed by a self-assembly process driving the assembly of 1D FM chains into an antiferromagnet.These constituent 1D FM chains become decoupled by external perturbations,such as heat,pressure,strain,etc.,thereby realizing the read-data operation of information.We anticipate that this antiferromagnet,composed of 1D FM chains,can be realized not only in the 1D to 2D system,but also is expected to expand to 2D to three-dimensional(3D)system,and even 1D to 3D system.展开更多
The competition between dimensionality and ordering in multiferroic materials is of great interest for both fundamental physics and potential applications. Combining first-principles calculations with micromagnetic si...The competition between dimensionality and ordering in multiferroic materials is of great interest for both fundamental physics and potential applications. Combining first-principles calculations with micromagnetic simulations, we investigate recently synthesized ultrathin perovskite bismuth ferrite(BFO) films. Our numerical results reveal that, at the monolayer limit, the ferroelectricity of BFO is missing because the octahedral distortions are constrained. However, the monolayer bismuth ferrite is a topological antiferromagnetic metal with tunable bimeron magnetic structure. The dual topologically non-trivial characteristics make monolayer bismuth ferrite a multifunctional building block in future spintronic devices.展开更多
The celebrated antiferromagnetic(AFM) phase transition was realized in a most recent optical lattice experiment for the 3D fermionic Hubbard model [Shao et al. Nature 632 267(2024)]. Despite this important progress, i...The celebrated antiferromagnetic(AFM) phase transition was realized in a most recent optical lattice experiment for the 3D fermionic Hubbard model [Shao et al. Nature 632 267(2024)]. Despite this important progress, it was observed that the AFM structure factor(and also the critical entropy) reaches its maximum at an interaction strength U/t■11.75, which is significantly larger than the theoretical prediction of U/t■8. Here,we resolve this discrepancy by studying the interplay between the thermal entropy, density disorder, and antiferromagnetism in the half-filled 3D Hubbard model, using numerically exact auxiliary-field quantum Monte Carlo simulations. We have achieved an accurate entropy phase diagram, enabling us to simulate arbitrary entropy path on the temperature-interaction plane and track experimental parameters effectively. We find that above the discrepancy can be quantitatively explained by the entropy increase associated with increasing interaction strength in experiments, and together with the lattice density disorder present in the experimental setup. We further investigate the entropy dependence of double occupancy and predict universal behaviors that could serve as valuable probes in future optical lattice experiments.展开更多
Rare-earth based frustrated magnets have attracted great attention as excellent candidates for magnetic refrigeration at sub-Kelvin temperatures,while the experimental identification of systems exhibiting both large v...Rare-earth based frustrated magnets have attracted great attention as excellent candidates for magnetic refrigeration at sub-Kelvin temperatures,while the experimental identification of systems exhibiting both large volumetric cooling capacity and reduced working temperatures far below 1K remains a challenge.Here,through ultra-low temperature magnetism and thermodynamic characterizations,we unveil the large magnetocaloric effect(MCE)realized at sub-Kelvin temperatures in the frustrated Kagome antiferromagnet Gd_(3)BWO_(9)with T_(N)∼1.0 K.The isothermal magnetization curves indicate the existence of field(B)induced anisotropic magnetic phase diagrams,where four distinct magnetic phases for B‖c-axis and five magnetic phases for B‖ab-plane are identified at T<T_(N).The analysis of magnetic entropy S(B,T)data and direct adiabatic demagnetization tests reveal remarkable cooling performance at sub-Kelvin temperatures featured by a large volumetric entropy density of 502.2 mJ/K/cm^(3)and a low attainable minimal temperature T_(min)∼168mK from the initial cooling condition of 2K and 6 T,surpassing most Gd-based refrigerants previously documented in temperature ranges of 0.25–4 K.The realized T_(min)∼168mK far below T_(N)∼1.0K in Gd_(3)BWO_(9)is related to the combined effects of magnetic frustration and criticality-enhanced MCE,which together leave substantial magnetic entropy at reduced temperatures by enhancing spin fluctuations.展开更多
In this investigation,we delve into the interplay between strong interactions and intricate topological configurations,leading to emergent quantum states such as magnetic topological insulators.The crux of our researc...In this investigation,we delve into the interplay between strong interactions and intricate topological configurations,leading to emergent quantum states such as magnetic topological insulators.The crux of our research centers on elucidating how lattice symmetry modulates antiferromagnetic quantum Hall phenomena.Utilizing the spinful Harper-Hofstadter model enriched with a next-nearest-neighbor(NNN)hopping term,we discern a half-filling bandgap,paving the way for the manifestation of a quantum Hall insulator characterized by a Chern number,C=2.Upon integrating a checkerboardpatterned staggered potential(△)and the Hubbard interaction(U),the system exhibits complex dynamical behaviors.Marginal NNN hopping culminates in a Ne′el antiferromagnetic Mott insulator.In contrast,intensified hopping results in stripe antiferromagnetic configurations.Moreover,in the regime of limited NNN hopping,a C=1 Ne′el antiferromagnetic quantum Hall insulator emerges.A salient observation pertains to the manifestation of a C=1 antiferromagnetic quantum Hall insulator when spin-flip mechanisms are not offset by space group symmetries.These findings chart a pathway for further explorations into antiferromagnetic Quantum Hall States.展开更多
A uniform longitudinal field applied to the transverse Ising model(TIM)distinguishes the antiferromagnetic Ising interaction from its ferromagnetic counterpart.While the ground state of the latter shows no quantum pha...A uniform longitudinal field applied to the transverse Ising model(TIM)distinguishes the antiferromagnetic Ising interaction from its ferromagnetic counterpart.While the ground state of the latter shows no quantum phase transition(QPT),the ground state of the former exhibits rich phases:paramagnetic,antiferromagnetic,and possibly disordered phases.Although the first two are clearly identified,the existence of the disordered phase remains controversial.Here,we use the pattern picture to explore the competition among the antiferromagnetic Ising interaction J,the transverse field hx and the longitudinal field h_(z),and uncover which patterns are responsible for these three competing energy scales,thereby determining the possible phases and the QPTs among them.The system size ranges from L=8 to 128 and the transverse field hx is fixed at 1.Under these parameters,our results show the existence of the disordered phase.For a small h_(z),the system transitions from a disordered phase to an antiferromagnetic phase as J increases.For a large h_(z),the system undergoes two phase transitions:from paramagnetic to disordered,and then to antiferromagnetic phase.These results not only unveil the rich physics of this paradigmatic model but also stimulate quantum simulation by using currently available experimental platforms.展开更多
We theoretically study the effect of a uniform orbital magnetic field on spin waves in a triangular lattice tetrahedral antiferromagnetic insulator without spin–orbit coupling. Through symmetry analysis and microscop...We theoretically study the effect of a uniform orbital magnetic field on spin waves in a triangular lattice tetrahedral antiferromagnetic insulator without spin–orbit coupling. Through symmetry analysis and microscopic calculation, we show that the optical spin wave mode at the Brillouin zone center can acquire a small orbital magnetic moment, although it exhibits no magnetic moment from the Zeeman coupling. Our results are potentially applicable to intercalated van der Waals materials and twisted double-bilayer graphene.展开更多
Vanadium-based transition metal chalcogenides VmXn(X=S,Se,Te)with their distinctive quantum effects,tunable magnetism,spin-orbit coupling,and high carrier mobility are a valuable platform to explore the interplay betw...Vanadium-based transition metal chalcogenides VmXn(X=S,Se,Te)with their distinctive quantum effects,tunable magnetism,spin-orbit coupling,and high carrier mobility are a valuable platform to explore the interplay between magnetism and electronic correlations,especially with tunable structural phases and magnetic properties through stoichiometric variations,making them ideal candidates for advanced device applications.Here,we report the synthesis of high-quality V_(5+x)S_(8)single crystals with different concentrations of self-intercalated vanadium.V_(5+x)S_(8)crystals show an antiferromagnetic behavior and a spin-flop-like transition below TN of 30.6 K.The high-quality V_(5+x)S_(8)single crystals exhibit a large negative magnetoresistance of 12.3%at 2 K.Interestingly,V_(5+x)S_(8)crystals show an obvious low-temperature resistance upturn that gradually levels off with the increasing magnetic field,attributed to the Kondo effect arising from the interaction between conduction electrons and embedded vanadium magnetic impurities.With increasing V doping,the antiferromagnetic interactions intensify,weakening the coupling between the local moments and conduction electrons,which in turn lowers the Kondo temperature(TK).Furthermore,the anomalous Hall effect is observed in V5.73S8,with an anomalous Hall conductivity(AHC)of 50.46 W^(-1)·cm^(-1)and anomalous Hall angle of 0.73%at 2 K.Our findings offer valuable insights into the mechanisms of the Kondo effect and anomalous Hall effect in self-intercalated transition metal chalcogenides with complex magnetism and electronic correlation effects.展开更多
就Bethuel,Brezis和Helein提出的问题讨论了Planar Ferromagnets and Antiferromagnets泛函在H={u(x)=(sinf(r)|xx|,cosf(r))∈H1(B1,S2);f(0)=0,f(1)=2π,r=|x|}中的径向极小元的一些性质,其中包括此泛函的径向极小元的零点的分布及若...就Bethuel,Brezis和Helein提出的问题讨论了Planar Ferromagnets and Antiferromagnets泛函在H={u(x)=(sinf(r)|xx|,cosf(r))∈H1(B1,S2);f(0)=0,f(1)=2π,r=|x|}中的径向极小元的一些性质,其中包括此泛函的径向极小元的零点的分布及若干个上界估计,并给出了这一问题的肯定回答.展开更多
The study on temperature dependence of exchange bias field and coercivity is crucial to solving the writing/reading dilemma in magnetic recording.Motivated by recent experimental findings,a complete switch between exc...The study on temperature dependence of exchange bias field and coercivity is crucial to solving the writing/reading dilemma in magnetic recording.Motivated by recent experimental findings,a complete switch between exchange bias field and coercivity with temperature is proposed,and the performance,characterized by average switching temperature(T_(S))and switching temperature width(T_(W)),controlled by antiferromagnetic anisotropy(KAF)and exchange coupling(J_(AF))constants is studied based on a MonteCarlo simulation.The results show that a linear relationship between T_(S)and KAFis established when KAFis above a critical value,while T_(S)is weakly influenced by J_(AF).On the contrary,T_(W)is insensitive to KAF,while strongly depends on J_(AF).Besides overcoming thermal energy,the increase of KAFfor a small J_(AF)guarantees the completely frozen states in the antiferromagnetic layers during magnetizing at higher temperature,below which the exchange bias field exists with a negligible coercivity.Otherwise,for a large J_(AF),the uncompensated antiferromagnetic magnetization behavior during the ferromagnetic magnetization reversal becomes complicated,and the switching process in the low temperature range depends on the irreversibility of uncompensated antiferromagnetic magnetization reversal during magnetizing,while in the high temperature range mainly influenced by the field-cooling process,resulting in a large T_(W).This work provides an opportunity to control/optimize the performance of the temperatureinduced switch between unidirectional and uniaxial symmetries through precisely tuning KAFand/or J_(AF)to meet different application demands in the next generation information technology.展开更多
By use of the Hartree approximation and the method of multiple scales, we investigate quantum solitons and intrinsic localized modes in a one-dimensional antiferromagnetic chain. It is shown that there exist solitons ...By use of the Hartree approximation and the method of multiple scales, we investigate quantum solitons and intrinsic localized modes in a one-dimensional antiferromagnetic chain. It is shown that there exist solitons of two different quantum frequency bands： i.e., magnetic optical solitons and acoustic solitons. At the boundary of the Brillouin zone, these solitons becornc quantum intrinsic localized modes： their quantum eigenfrequencics are below the bottom of the harmonic optical frequency band and above the top of the harmonic acoustic frequency band.展开更多
Engineering the electronic band structure of material systems enables the unprecedented exploration of new physical properties that are absent in natural or as-synthetic materials.Electronic structures of bilayer two-...Engineering the electronic band structure of material systems enables the unprecedented exploration of new physical properties that are absent in natural or as-synthetic materials.Electronic structures of bilayer two-dimensional(2D)systems can be flexibly engineered by the external electric field.For example.展开更多
By inserting an ultrathin Pt layer at Co/Ru interface,we established antiferromagnetic coupling with outof-plane magnetization in Co/Ru/Co film stacks fabricated by sputtering.To achieve configuration suitable for fre...By inserting an ultrathin Pt layer at Co/Ru interface,we established antiferromagnetic coupling with outof-plane magnetization in Co/Ru/Co film stacks fabricated by sputtering.To achieve configuration suitable for free layer,the magnetic properties of the stacks have been investigated by changing the thickness of Co,Ru and Pt layers using an orthogonal wedges technique.It is found that magnetic properties for upper Co layer thinner than 0.5 nm are sensitive to little change in Ru thickness.Improving continuity of upper Co layer by slightly increasing the thickness can effectively increase the squareness of minor loop.The switching magnetization of synthetic antiferromagnetic（SAF） structure is achieved by DC current under an in-plane static magnetic field of ± 500 Oe.This structure is very promising for free layer in spintronic application.展开更多
We present a method to increase the sum-frequency （SF） outputs in dielectric/antiferromagnet（AF）/Ag sandwich structures for a fixed input power. Two incident waves simultaneously illuminate the upper surface, one ...We present a method to increase the sum-frequency （SF） outputs in dielectric/antiferromagnet（AF）/Ag sandwich structures for a fixed input power. Two incident waves simultaneously illuminate the upper surface, one is oblique and the other is normal to it. Numerical calculations based on the SiO2/MnF2/Ag and ZnF2/MnF2/Ag structures show that the SF outputs on the upper film increase a few times as compared to those of a single AF film when the thickness of the AF film is one-quarter of the vacuum wavelength. Moreover, the SF outputs generated near the higher resonant frequency will be higher than those obtained near the lower resonant frequency. An optimum AF film thickness is achieved through investigating its effect on the SF outputs in the two different dielectric sandwich structures.展开更多
Antiferromagnets offer considerable potential for electronic device applications. This article reviews recent demonstrations of spin manipulation in antiferromagnetic devices using applied electrical currents. Due to ...Antiferromagnets offer considerable potential for electronic device applications. This article reviews recent demonstrations of spin manipulation in antiferromagnetic devices using applied electrical currents. Due to spin–orbit coupling in environments with particular crystalline or structural symmetries, the electric current can induce an effective magnetic field with a sign that alternates on the lengthscale of the unit cell. The staggered effective field provides an efficient mechanism for switching antiferromagnetic domains and moving antiferromagnetic domain walls, with writing speeds in the terahertz regime.展开更多
基金supported by the National Key Research and Development Program of China(Grant No.2022YFA1402203)the National Natural Science Foundations of China(Grant Nos.12174065 and 12104424)the Shanghai Municipal Science and Technology(Grant No.2019SHZDZX01)。
文摘In this work,Ga-doped Ce RhIn_(5) single crystals are grown by In/Ga flux method.Single-crystal X-ray diffraction,magnetic susceptibility,specific heat,and neutron diffraction measurements are utilized to characterize the sample quality and the antiferromagnetic transition temperature T_(N).By substituting In with Ga,T_(N) is slightly decreased,but the antiferromagnetic transition peaks in magnetic susceptibility and specific heat measurements are obviously broadened by external field along c-axis.By comparing with Zn-doped Ce RhIn_(5),it can be concluded that T_(N) is dominated by electron density,and the stiffness of antiferromagnetic transition is obviously reduced by Ga substitution.The substitution effects of Ga are possibly caused by forming heterogeneous local structures,which avoids quantum critical point,superconductivity,and non-Fermi liquid states.Investigations on Gadoped Ce RhIn_(5) help to comprehend the chemical substitution effects in Ce RhIn_(5),and the interaction between heterogeneous structure and long-range antiferromagnetic states.
基金supported by the National Key Projects for Research and Development of China(Grant Nos.2021YFA1400400 and 2024YFA1408104)the National Natural Science Foundation of China(Grant Nos.12434005,12374137,and 92165205).
文摘We investigate the origin of the 1/3 magnetization plateau in the S=1/2 kagome antiferromagnetic Heisenberg model using the variational Monte Carlo and exact diagonalization methods,to account for the recent experimental observations in YCu_(3)(OH)_(6+x)Br_(3-x)and YCu_(3)(OD)_(6+x)Br_(3-x).We identify three degenerate valencebond-solid(VBS)states forming a√3×√3 unit cell.These states exhibit David-star patterns in the spin moment distribution with only two fractional values-1/3 and 2/3,and are related through translational transformations.While the spin correlations in these VBS states are found to be short-range,resembling a quantum spin liquid,we show that they have a vanishing topological entanglement entropy and thus are topologically trivial many-body states.Our theoretical results provide strong evidence that the 1/3 magnetization plateau observed in recent experiments arises from these√3×√3 VBS states with fractional spin moments.
基金supported by the National Natural Science Foundation of China(Grant Nos.12204521,12250710675,and 12504198)the National Key R&D Program of China(Grant No.2022YFA1403000)。
文摘SrRuO_(3)is a canonical itinerant ferromagnet,yet its properties in the extreme two-dimensional limit on a(111)crystal plane remain largely unexplored.Here,we demonstrate a complete transformation of its ground state driven by dimensional reduction.As the thickness of(111)-oriented SrRuO_(3)films is reduced to a few unit cells,the system transitions from a metallic ferromagnet to a semiconducting antiferromagnet.This emergent antiferromagnetism is evidenced by a vanishing magnetic remanence and most strikingly,by the appearance of an unconventional twelve-fold anisotropic magnetoresistance.First-principles calculations confirm that an A-type antiferromagnetic order is the stable ground state in the ultrathin limit.Our findings establish(111)dimensional engineering as a powerful route to manipulate correlated electron states and uncover novel functionalities for antiferromagnetic spintronics.
文摘High-quality antiferromagnetic(AFM)θ-phase manganese nitride(MnN)films were successfully grown on MgO(001)substrates by plasma-assisted molecular beam epitaxy.Structural analysis confirms the high-quality MnN film has a tetragonal distortion with a c/a ratio of~0.98.The film exhibits exceptional stability in both aqueous and ambient conditions,which is a crucial factor for practical applications.Electrical transport reveals its metallic behavior with an upturn at low temperatures,which could be attributed to the Kondo effect originated from nitrogen vacancy-induced magnetic impurities.Room temperature exchange bias has been demonstrated in a MnN/CoFeB heterostructure,verifying the AFM ordering of MnN.Considering its high Néel temperature~650 K,superior stability,and low-cost,this work highlights the epitaxial MnN films as a promising candidate for AFM spintronic applications.
基金supported by the National Natural Science Foundation of China(Grant No.12474110)the National Key Research and Development Program of China(Grant No.2022YFA1403300)+1 种基金the Innovation Program for Quantum Science and Technology(Grant No.2024ZD0300103)the Shanghai Municipal Science and Technology Major Project(Grant No.2019SHZDZX01)。
文摘In antiferromagnets,dipolar coupling is often disregarded due to the cancellation of magnetic moments between the two sublattices,so that the spin-wave dispersion is predominantly determined by exchange interactions.However,antiferromagnetic spin waves typically involve a slight misalignment of the magnetic moments on the sublattices,which gives rise to a small net magnetization enabling long-range dipolar coupling.In this paper,we investigate the role of dipolar coupling in spin-wave excitations and its influence on the resulting dispersion.Our findings show that:(i)when the Néel vector is perpendicular to the film plane or lies within the film plane and parallel to the wave vector,the dispersion branches can be divided into two groups:those unaffected by the dipolar field and those influenced by it.In these cases,the total magnetic moment remains linearly polarized,but the polarization directions differ between the two types of branches;(ii)when the Néel vector lies in the film plane and is perpendicular to the wave vector,the dipolar interactions affect both types of dispersion branches,leading to their hybridization.This hybridization alters the polarization of the magnetic moment,resulting in elliptical polarization.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.12435001,12304006,and 12404265)the Natural Science Foundation of Shanghai,China(Grant No.23JC1401400)+1 种基金the Fundamental Research Funds for the Central Universities of East China University,the Natural Science Foundation of WIUCAS(Grant No.WIUCASQD2023004)the Natural Science Foundation of Wenzhou(Grant No.L2023005)。
文摘Antiferromagnetic(AFM)spintronics have sparked extensive research interest in the field of information storage due to the considerable advantages offered by antiferromagnets,including non-volatile data storage,higher storage density,and accelerating data processing.However,the manipulation and detection of internal AFM order in antiferromagnets hinders their applications in spintronic devices.Here,we proposed a design idea for an AFM material that is self-assembled from one-dimensional(1D)ferromagnetic(FM)chains.To validate this idea,we screened a two-dimensional(2D)selfassembled CrBr_(2)antiferromagnet of an AFM semiconductor from a large amount of data.This 2D CrBr_(2)antiferromagnet is composed of 1D FM CrBr_(2)chains that are arranged in a staggered and parallel configuration.In this type of antiferromagnet,the write-data operation of information is achieved in 1D FM chains,followed by a self-assembly process driving the assembly of 1D FM chains into an antiferromagnet.These constituent 1D FM chains become decoupled by external perturbations,such as heat,pressure,strain,etc.,thereby realizing the read-data operation of information.We anticipate that this antiferromagnet,composed of 1D FM chains,can be realized not only in the 1D to 2D system,but also is expected to expand to 2D to three-dimensional(3D)system,and even 1D to 3D system.
基金supported by the National Natural Science Foundation of China (Grant No. 12174382)the Strategic Priority Research Program of the Chinese Academy of Sciences (Grant Nos. XDB0460000 and XDB28000000)the Innovation Program for Quantum Science and Technology (Grant Nos. 2024ZD0300104 and 2021ZD0302600)。
文摘The competition between dimensionality and ordering in multiferroic materials is of great interest for both fundamental physics and potential applications. Combining first-principles calculations with micromagnetic simulations, we investigate recently synthesized ultrathin perovskite bismuth ferrite(BFO) films. Our numerical results reveal that, at the monolayer limit, the ferroelectricity of BFO is missing because the octahedral distortions are constrained. However, the monolayer bismuth ferrite is a topological antiferromagnetic metal with tunable bimeron magnetic structure. The dual topologically non-trivial characteristics make monolayer bismuth ferrite a multifunctional building block in future spintronic devices.
基金supported by the National Natural Science Foundation of China (Grant Nos.12247103,12204377,12275263)the Quantum Science and Technology National Science and Technology Major Project (Grant No.2021ZD0301900)+1 种基金the Natural Science Foundation of Fujian province of China (Grant No.2023J02032)the Youth Innovation Team of Shaanxi Universities。
文摘The celebrated antiferromagnetic(AFM) phase transition was realized in a most recent optical lattice experiment for the 3D fermionic Hubbard model [Shao et al. Nature 632 267(2024)]. Despite this important progress, it was observed that the AFM structure factor(and also the critical entropy) reaches its maximum at an interaction strength U/t■11.75, which is significantly larger than the theoretical prediction of U/t■8. Here,we resolve this discrepancy by studying the interplay between the thermal entropy, density disorder, and antiferromagnetism in the half-filled 3D Hubbard model, using numerically exact auxiliary-field quantum Monte Carlo simulations. We have achieved an accurate entropy phase diagram, enabling us to simulate arbitrary entropy path on the temperature-interaction plane and track experimental parameters effectively. We find that above the discrepancy can be quantitatively explained by the entropy increase associated with increasing interaction strength in experiments, and together with the lattice density disorder present in the experimental setup. We further investigate the entropy dependence of double occupancy and predict universal behaviors that could serve as valuable probes in future optical lattice experiments.
基金supported by the National Key Research and Development Program(Grant Nos.2024YFA1611200 and 2023YFA1406500)the National Natural Science Foundation of China(Grant Nos.12141002 and 52088101)the Strategic Priority Research Program of the Chinese Academy of Sciences(Grant No.XDB1270000)。
文摘Rare-earth based frustrated magnets have attracted great attention as excellent candidates for magnetic refrigeration at sub-Kelvin temperatures,while the experimental identification of systems exhibiting both large volumetric cooling capacity and reduced working temperatures far below 1K remains a challenge.Here,through ultra-low temperature magnetism and thermodynamic characterizations,we unveil the large magnetocaloric effect(MCE)realized at sub-Kelvin temperatures in the frustrated Kagome antiferromagnet Gd_(3)BWO_(9)with T_(N)∼1.0 K.The isothermal magnetization curves indicate the existence of field(B)induced anisotropic magnetic phase diagrams,where four distinct magnetic phases for B‖c-axis and five magnetic phases for B‖ab-plane are identified at T<T_(N).The analysis of magnetic entropy S(B,T)data and direct adiabatic demagnetization tests reveal remarkable cooling performance at sub-Kelvin temperatures featured by a large volumetric entropy density of 502.2 mJ/K/cm^(3)and a low attainable minimal temperature T_(min)∼168mK from the initial cooling condition of 2K and 6 T,surpassing most Gd-based refrigerants previously documented in temperature ranges of 0.25–4 K.The realized T_(min)∼168mK far below T_(N)∼1.0K in Gd_(3)BWO_(9)is related to the combined effects of magnetic frustration and criticality-enhanced MCE,which together leave substantial magnetic entropy at reduced temperatures by enhancing spin fluctuations.
文摘In this investigation,we delve into the interplay between strong interactions and intricate topological configurations,leading to emergent quantum states such as magnetic topological insulators.The crux of our research centers on elucidating how lattice symmetry modulates antiferromagnetic quantum Hall phenomena.Utilizing the spinful Harper-Hofstadter model enriched with a next-nearest-neighbor(NNN)hopping term,we discern a half-filling bandgap,paving the way for the manifestation of a quantum Hall insulator characterized by a Chern number,C=2.Upon integrating a checkerboardpatterned staggered potential(△)and the Hubbard interaction(U),the system exhibits complex dynamical behaviors.Marginal NNN hopping culminates in a Ne′el antiferromagnetic Mott insulator.In contrast,intensified hopping results in stripe antiferromagnetic configurations.Moreover,in the regime of limited NNN hopping,a C=1 Ne′el antiferromagnetic quantum Hall insulator emerges.A salient observation pertains to the manifestation of a C=1 antiferromagnetic quantum Hall insulator when spin-flip mechanisms are not offset by space group symmetries.These findings chart a pathway for further explorations into antiferromagnetic Quantum Hall States.
基金supported by the National Key Research and Development Program of China(Grant No.2022YFA1402704)the National Natural Science Foundation of China(Grant No.12247101)。
文摘A uniform longitudinal field applied to the transverse Ising model(TIM)distinguishes the antiferromagnetic Ising interaction from its ferromagnetic counterpart.While the ground state of the latter shows no quantum phase transition(QPT),the ground state of the former exhibits rich phases:paramagnetic,antiferromagnetic,and possibly disordered phases.Although the first two are clearly identified,the existence of the disordered phase remains controversial.Here,we use the pattern picture to explore the competition among the antiferromagnetic Ising interaction J,the transverse field hx and the longitudinal field h_(z),and uncover which patterns are responsible for these three competing energy scales,thereby determining the possible phases and the QPTs among them.The system size ranges from L=8 to 128 and the transverse field hx is fixed at 1.Under these parameters,our results show the existence of the disordered phase.For a small h_(z),the system transitions from a disordered phase to an antiferromagnetic phase as J increases.For a large h_(z),the system undergoes two phase transitions:from paramagnetic to disordered,and then to antiferromagnetic phase.These results not only unveil the rich physics of this paradigmatic model but also stimulate quantum simulation by using currently available experimental platforms.
基金Project supported by the National Key R&D Program of China (Grant No. 2022YFA1403800)the National Natural Science Foundation of China (Grant Nos. 12250008 and 12188101)+1 种基金the Project for Young Scientists in Basic Research (Grant No. YSBR-059)performed in part at the Aspen Center for Physics, supported by the National Natural Science Foundation of China (Grant No. PHY2210452)。
文摘We theoretically study the effect of a uniform orbital magnetic field on spin waves in a triangular lattice tetrahedral antiferromagnetic insulator without spin–orbit coupling. Through symmetry analysis and microscopic calculation, we show that the optical spin wave mode at the Brillouin zone center can acquire a small orbital magnetic moment, although it exhibits no magnetic moment from the Zeeman coupling. Our results are potentially applicable to intercalated van der Waals materials and twisted double-bilayer graphene.
基金supported by the National Key R&D Program of China(Grant No.2022YFA1204100)the National Natural Science Foundation of China(Grant Nos.62488201 and 1240041502)+2 种基金the CAS Project for Young Scientists in Basic Research(Grant No.YSBR-003)the Chinese Academy of Sciences(Grant No.XDB33030100)the Innovation Program of Quantum Science and Technology(Grant No.2021ZD0302700).
文摘Vanadium-based transition metal chalcogenides VmXn(X=S,Se,Te)with their distinctive quantum effects,tunable magnetism,spin-orbit coupling,and high carrier mobility are a valuable platform to explore the interplay between magnetism and electronic correlations,especially with tunable structural phases and magnetic properties through stoichiometric variations,making them ideal candidates for advanced device applications.Here,we report the synthesis of high-quality V_(5+x)S_(8)single crystals with different concentrations of self-intercalated vanadium.V_(5+x)S_(8)crystals show an antiferromagnetic behavior and a spin-flop-like transition below TN of 30.6 K.The high-quality V_(5+x)S_(8)single crystals exhibit a large negative magnetoresistance of 12.3%at 2 K.Interestingly,V_(5+x)S_(8)crystals show an obvious low-temperature resistance upturn that gradually levels off with the increasing magnetic field,attributed to the Kondo effect arising from the interaction between conduction electrons and embedded vanadium magnetic impurities.With increasing V doping,the antiferromagnetic interactions intensify,weakening the coupling between the local moments and conduction electrons,which in turn lowers the Kondo temperature(TK).Furthermore,the anomalous Hall effect is observed in V5.73S8,with an anomalous Hall conductivity(AHC)of 50.46 W^(-1)·cm^(-1)and anomalous Hall angle of 0.73%at 2 K.Our findings offer valuable insights into the mechanisms of the Kondo effect and anomalous Hall effect in self-intercalated transition metal chalcogenides with complex magnetism and electronic correlation effects.
文摘就Bethuel,Brezis和Helein提出的问题讨论了Planar Ferromagnets and Antiferromagnets泛函在H={u(x)=(sinf(r)|xx|,cosf(r))∈H1(B1,S2);f(0)=0,f(1)=2π,r=|x|}中的径向极小元的一些性质,其中包括此泛函的径向极小元的零点的分布及若干个上界估计,并给出了这一问题的肯定回答.
基金financially supported by the National Natural Science Foundation of China(No.11774045)the Joint Research Fund Liaoning-Shenyang National Laboratory for Materials Science(No.20180510008)。
文摘The study on temperature dependence of exchange bias field and coercivity is crucial to solving the writing/reading dilemma in magnetic recording.Motivated by recent experimental findings,a complete switch between exchange bias field and coercivity with temperature is proposed,and the performance,characterized by average switching temperature(T_(S))and switching temperature width(T_(W)),controlled by antiferromagnetic anisotropy(KAF)and exchange coupling(J_(AF))constants is studied based on a MonteCarlo simulation.The results show that a linear relationship between T_(S)and KAFis established when KAFis above a critical value,while T_(S)is weakly influenced by J_(AF).On the contrary,T_(W)is insensitive to KAF,while strongly depends on J_(AF).Besides overcoming thermal energy,the increase of KAFfor a small J_(AF)guarantees the completely frozen states in the antiferromagnetic layers during magnetizing at higher temperature,below which the exchange bias field exists with a negligible coercivity.Otherwise,for a large J_(AF),the uncompensated antiferromagnetic magnetization behavior during the ferromagnetic magnetization reversal becomes complicated,and the switching process in the low temperature range depends on the irreversibility of uncompensated antiferromagnetic magnetization reversal during magnetizing,while in the high temperature range mainly influenced by the field-cooling process,resulting in a large T_(W).This work provides an opportunity to control/optimize the performance of the temperatureinduced switch between unidirectional and uniaxial symmetries through precisely tuning KAFand/or J_(AF)to meet different application demands in the next generation information technology.
基金Project supported by the Natural Science Foundation of Hunan Province, China （Grant No 03JJY6008）.
文摘By use of the Hartree approximation and the method of multiple scales, we investigate quantum solitons and intrinsic localized modes in a one-dimensional antiferromagnetic chain. It is shown that there exist solitons of two different quantum frequency bands： i.e., magnetic optical solitons and acoustic solitons. At the boundary of the Brillouin zone, these solitons becornc quantum intrinsic localized modes： their quantum eigenfrequencics are below the bottom of the harmonic optical frequency band and above the top of the harmonic acoustic frequency band.
文摘Engineering the electronic band structure of material systems enables the unprecedented exploration of new physical properties that are absent in natural or as-synthetic materials.Electronic structures of bilayer two-dimensional(2D)systems can be flexibly engineered by the external electric field.For example.
基金supported by the National Natural Science Foundation of China under grants Nos.51590883,51331006 and51471167a project of the Chinese Academy of Sciences with grant No.KJZD-EW-M05-3
文摘By inserting an ultrathin Pt layer at Co/Ru interface,we established antiferromagnetic coupling with outof-plane magnetization in Co/Ru/Co film stacks fabricated by sputtering.To achieve configuration suitable for free layer,the magnetic properties of the stacks have been investigated by changing the thickness of Co,Ru and Pt layers using an orthogonal wedges technique.It is found that magnetic properties for upper Co layer thinner than 0.5 nm are sensitive to little change in Ru thickness.Improving continuity of upper Co layer by slightly increasing the thickness can effectively increase the squareness of minor loop.The switching magnetization of synthetic antiferromagnetic（SAF） structure is achieved by DC current under an in-plane static magnetic field of ± 500 Oe.This structure is very promising for free layer in spintronic application.
基金Project supported by the Young Academic Back-bone of Education Commission of Heilongjiang Province,China(Grant Nos.1251G030 and12521154)the National Natural Science Foundation of China(Grant Nos.11104050,11204056,and 11074061)
文摘We present a method to increase the sum-frequency （SF） outputs in dielectric/antiferromagnet（AF）/Ag sandwich structures for a fixed input power. Two incident waves simultaneously illuminate the upper surface, one is oblique and the other is normal to it. Numerical calculations based on the SiO2/MnF2/Ag and ZnF2/MnF2/Ag structures show that the SF outputs on the upper film increase a few times as compared to those of a single AF film when the thickness of the AF film is one-quarter of the vacuum wavelength. Moreover, the SF outputs generated near the higher resonant frequency will be higher than those obtained near the lower resonant frequency. An optimum AF film thickness is achieved through investigating its effect on the SF outputs in the two different dielectric sandwich structures.
基金Project supported by EPSRC(Grant No.EP/P019749/1)support from the Royal Society through a University Research Fellowship
文摘Antiferromagnets offer considerable potential for electronic device applications. This article reviews recent demonstrations of spin manipulation in antiferromagnetic devices using applied electrical currents. Due to spin–orbit coupling in environments with particular crystalline or structural symmetries, the electric current can induce an effective magnetic field with a sign that alternates on the lengthscale of the unit cell. The staggered effective field provides an efficient mechanism for switching antiferromagnetic domains and moving antiferromagnetic domain walls, with writing speeds in the terahertz regime.
