In this work,Ga-doped Ce RhIn_(5) single crystals are grown by In/Ga flux method.Single-crystal X-ray diffraction,magnetic susceptibility,specific heat,and neutron diffraction measurements are utilized to characterize...In this work,Ga-doped Ce RhIn_(5) single crystals are grown by In/Ga flux method.Single-crystal X-ray diffraction,magnetic susceptibility,specific heat,and neutron diffraction measurements are utilized to characterize the sample quality and the antiferromagnetic transition temperature T_(N).By substituting In with Ga,T_(N) is slightly decreased,but the antiferromagnetic transition peaks in magnetic susceptibility and specific heat measurements are obviously broadened by external field along c-axis.By comparing with Zn-doped Ce RhIn_(5),it can be concluded that T_(N) is dominated by electron density,and the stiffness of antiferromagnetic transition is obviously reduced by Ga substitution.The substitution effects of Ga are possibly caused by forming heterogeneous local structures,which avoids quantum critical point,superconductivity,and non-Fermi liquid states.Investigations on Gadoped Ce RhIn_(5) help to comprehend the chemical substitution effects in Ce RhIn_(5),and the interaction between heterogeneous structure and long-range antiferromagnetic states.展开更多
We investigate the origin of the 1/3 magnetization plateau in the S=1/2 kagome antiferromagnetic Heisenberg model using the variational Monte Carlo and exact diagonalization methods,to account for the recent experimen...We investigate the origin of the 1/3 magnetization plateau in the S=1/2 kagome antiferromagnetic Heisenberg model using the variational Monte Carlo and exact diagonalization methods,to account for the recent experimental observations in YCu_(3)(OH)_(6+x)Br_(3-x)and YCu_(3)(OD)_(6+x)Br_(3-x).We identify three degenerate valencebond-solid(VBS)states forming a√3×√3 unit cell.These states exhibit David-star patterns in the spin moment distribution with only two fractional values-1/3 and 2/3,and are related through translational transformations.While the spin correlations in these VBS states are found to be short-range,resembling a quantum spin liquid,we show that they have a vanishing topological entanglement entropy and thus are topologically trivial many-body states.Our theoretical results provide strong evidence that the 1/3 magnetization plateau observed in recent experiments arises from these√3×√3 VBS states with fractional spin moments.展开更多
High-quality antiferromagnetic(AFM)θ-phase manganese nitride(MnN)films were successfully grown on MgO(001)substrates by plasma-assisted molecular beam epitaxy.Structural analysis confirms the high-quality MnN film ha...High-quality antiferromagnetic(AFM)θ-phase manganese nitride(MnN)films were successfully grown on MgO(001)substrates by plasma-assisted molecular beam epitaxy.Structural analysis confirms the high-quality MnN film has a tetragonal distortion with a c/a ratio of~0.98.The film exhibits exceptional stability in both aqueous and ambient conditions,which is a crucial factor for practical applications.Electrical transport reveals its metallic behavior with an upturn at low temperatures,which could be attributed to the Kondo effect originated from nitrogen vacancy-induced magnetic impurities.Room temperature exchange bias has been demonstrated in a MnN/CoFeB heterostructure,verifying the AFM ordering of MnN.Considering its high Néel temperature~650 K,superior stability,and low-cost,this work highlights the epitaxial MnN films as a promising candidate for AFM spintronic applications.展开更多
Antiferromagnetic(AFM)spintronics have sparked extensive research interest in the field of information storage due to the considerable advantages offered by antiferromagnets,including non-volatile data storage,higher ...Antiferromagnetic(AFM)spintronics have sparked extensive research interest in the field of information storage due to the considerable advantages offered by antiferromagnets,including non-volatile data storage,higher storage density,and accelerating data processing.However,the manipulation and detection of internal AFM order in antiferromagnets hinders their applications in spintronic devices.Here,we proposed a design idea for an AFM material that is self-assembled from one-dimensional(1D)ferromagnetic(FM)chains.To validate this idea,we screened a two-dimensional(2D)selfassembled CrBr_(2)antiferromagnet of an AFM semiconductor from a large amount of data.This 2D CrBr_(2)antiferromagnet is composed of 1D FM CrBr_(2)chains that are arranged in a staggered and parallel configuration.In this type of antiferromagnet,the write-data operation of information is achieved in 1D FM chains,followed by a self-assembly process driving the assembly of 1D FM chains into an antiferromagnet.These constituent 1D FM chains become decoupled by external perturbations,such as heat,pressure,strain,etc.,thereby realizing the read-data operation of information.We anticipate that this antiferromagnet,composed of 1D FM chains,can be realized not only in the 1D to 2D system,but also is expected to expand to 2D to three-dimensional(3D)system,and even 1D to 3D system.展开更多
The competition between dimensionality and ordering in multiferroic materials is of great interest for both fundamental physics and potential applications. Combining first-principles calculations with micromagnetic si...The competition between dimensionality and ordering in multiferroic materials is of great interest for both fundamental physics and potential applications. Combining first-principles calculations with micromagnetic simulations, we investigate recently synthesized ultrathin perovskite bismuth ferrite(BFO) films. Our numerical results reveal that, at the monolayer limit, the ferroelectricity of BFO is missing because the octahedral distortions are constrained. However, the monolayer bismuth ferrite is a topological antiferromagnetic metal with tunable bimeron magnetic structure. The dual topologically non-trivial characteristics make monolayer bismuth ferrite a multifunctional building block in future spintronic devices.展开更多
In this investigation,we delve into the interplay between strong interactions and intricate topological configurations,leading to emergent quantum states such as magnetic topological insulators.The crux of our researc...In this investigation,we delve into the interplay between strong interactions and intricate topological configurations,leading to emergent quantum states such as magnetic topological insulators.The crux of our research centers on elucidating how lattice symmetry modulates antiferromagnetic quantum Hall phenomena.Utilizing the spinful Harper-Hofstadter model enriched with a next-nearest-neighbor(NNN)hopping term,we discern a half-filling bandgap,paving the way for the manifestation of a quantum Hall insulator characterized by a Chern number,C=2.Upon integrating a checkerboardpatterned staggered potential(△)and the Hubbard interaction(U),the system exhibits complex dynamical behaviors.Marginal NNN hopping culminates in a Ne′el antiferromagnetic Mott insulator.In contrast,intensified hopping results in stripe antiferromagnetic configurations.Moreover,in the regime of limited NNN hopping,a C=1 Ne′el antiferromagnetic quantum Hall insulator emerges.A salient observation pertains to the manifestation of a C=1 antiferromagnetic quantum Hall insulator when spin-flip mechanisms are not offset by space group symmetries.These findings chart a pathway for further explorations into antiferromagnetic Quantum Hall States.展开更多
We theoretically study the effect of a uniform orbital magnetic field on spin waves in a triangular lattice tetrahedral antiferromagnetic insulator without spin–orbit coupling. Through symmetry analysis and microscop...We theoretically study the effect of a uniform orbital magnetic field on spin waves in a triangular lattice tetrahedral antiferromagnetic insulator without spin–orbit coupling. Through symmetry analysis and microscopic calculation, we show that the optical spin wave mode at the Brillouin zone center can acquire a small orbital magnetic moment, although it exhibits no magnetic moment from the Zeeman coupling. Our results are potentially applicable to intercalated van der Waals materials and twisted double-bilayer graphene.展开更多
Vanadium-based transition metal chalcogenides VmXn(X=S,Se,Te)with their distinctive quantum effects,tunable magnetism,spin-orbit coupling,and high carrier mobility are a valuable platform to explore the interplay betw...Vanadium-based transition metal chalcogenides VmXn(X=S,Se,Te)with their distinctive quantum effects,tunable magnetism,spin-orbit coupling,and high carrier mobility are a valuable platform to explore the interplay between magnetism and electronic correlations,especially with tunable structural phases and magnetic properties through stoichiometric variations,making them ideal candidates for advanced device applications.Here,we report the synthesis of high-quality V_(5+x)S_(8)single crystals with different concentrations of self-intercalated vanadium.V_(5+x)S_(8)crystals show an antiferromagnetic behavior and a spin-flop-like transition below TN of 30.6 K.The high-quality V_(5+x)S_(8)single crystals exhibit a large negative magnetoresistance of 12.3%at 2 K.Interestingly,V_(5+x)S_(8)crystals show an obvious low-temperature resistance upturn that gradually levels off with the increasing magnetic field,attributed to the Kondo effect arising from the interaction between conduction electrons and embedded vanadium magnetic impurities.With increasing V doping,the antiferromagnetic interactions intensify,weakening the coupling between the local moments and conduction electrons,which in turn lowers the Kondo temperature(TK).Furthermore,the anomalous Hall effect is observed in V5.73S8,with an anomalous Hall conductivity(AHC)of 50.46 W^(-1)·cm^(-1)and anomalous Hall angle of 0.73%at 2 K.Our findings offer valuable insights into the mechanisms of the Kondo effect and anomalous Hall effect in self-intercalated transition metal chalcogenides with complex magnetism and electronic correlation effects.展开更多
Intercalated transition metal dichalcogenides(TMDCs)attract much attention due to their rich properties and potential applications.In this article,we grew successfully high-quality V_(1/3)TaS_(2) crystals by a vapor t...Intercalated transition metal dichalcogenides(TMDCs)attract much attention due to their rich properties and potential applications.In this article,we grew successfully high-quality V_(1/3)TaS_(2) crystals by a vapor transport method.We measured the magnetization,longitudinal resistivityρxx(T,H),Hall resistivityρxy(T,H),as well as performed calculations of the electronic band structure.It was found that V_(1/3)TaS_(2) is an A-type antiferromagnet with the Neel temperature T_(N)=6.20 K,and exhibits a negative magnetoresistance(MR)near T_(N).Both band structure calculations and Hall resistivity measurements demonstrated it is a magnetic semimetal.展开更多
Quasi-one-dimensional(1D)antiferromagnets are known to display intriguing phenomena especially when there is a spin gap in their spin-excitation spectra.Here we demonstrate that a spin gap exists in the quasi-1D Heise...Quasi-one-dimensional(1D)antiferromagnets are known to display intriguing phenomena especially when there is a spin gap in their spin-excitation spectra.Here we demonstrate that a spin gap exists in the quasi-1D Heisenberg antiferromagnet CoTi2O5 with highly ordered Co2+/Ti4+occupation,in which the Co2+ions with S=3/2 form a 1D spin chain along the a-axis.CoTi2O5 undergoes an antiferromagnetic transition at TN~24 K and exhibits obvious anisotropic magnetic susceptibility even in the paramagnetic region.Although a gapless magnetic ground state is usually expected in a quasi-1D Heisenberg antiferromagnet with half-integer spins,by analyzing the specific heat,the thermal conductivity,and the spin-lattice relaxation rate(1/T1)as a function of temperature,we found that a spin gap is opened in the spin-excitation spectrum of CoTi2O5 around TN,manifested by the rapid decrease of magnetic specific heat to zero,the double-peak characteristic in thermal conductivity,and the exponential decay of 1/T1 below TN.Both the magnetic measurements and the first-principles calculations results indicate that there is spin-orbit coupling in CoTi2O5,which induces the magnetic anisotropy in CoTi2O5,and then opens the spin gap at low temperature.展开更多
We study the coexistence of antiferromagnetism and unconventional superconductivity on the Creutz lattice which shows strictly flat bands in the noninteracting regime.The famous renormalized mean-field theory is used ...We study the coexistence of antiferromagnetism and unconventional superconductivity on the Creutz lattice which shows strictly flat bands in the noninteracting regime.The famous renormalized mean-field theory is used to deal with strong electron-electron repulsive Hubbard interaction in the effective low-energy t-J model,the superfluid weight of the unconventional superconducting state has been calculated via the linear response theory.An unconventional superconducting state with both spin-singlet and staggered spin-triplet pairs emerges beyond a critical antiferromagnetic coupling interaction,while antiferromagnetism accompanies this state.The superconducting state with only spin-singlet pairs is dominant with paramagnetic phase.The A phase is analogous to the pseudogap phase,which shows that electrons go to form pairs but do not cause a supercurrent.We also show the superfluid behavior of the unconventional superconducting state and its critical temperature.It is proven directly that the flat band can effectively raise the critical temperature of superconductivity.It is implementable to simulate and control strongly-correlated electrons'behavior on the Creutz lattice in the ultracold atoms experiment or other artificial structures.Our results may help the understanding of the interplay between unconventional superconductivity and magnetism.展开更多
The spin pumping effect in magnetic heterostructures and multilayers is a highly effective method for the generationand transmission of spin currents. In the increasingly prominent synthetic antiferromagnetic structur...The spin pumping effect in magnetic heterostructures and multilayers is a highly effective method for the generationand transmission of spin currents. In the increasingly prominent synthetic antiferromagnetic structures, the two ferromagneticlayers demonstrate in-phase and out-of-phase states, corresponding to acoustic and optical precession modes. Withinthis context, our study explores the spin pumping effect in Py/Ru/Py synthetic antiferromagnetic structures across differentmodes. The heightened magnetic damping resulting from the spin pumping effect in the in-phase state initially decreaseswith increasing Py thickness before stabilizing. Conversely, in the out-of-phase state, the amplified damping exceeds thatof the in-phase state, suggesting a greater spin relaxation within this configuration, which demonstrates sensitivity to alterationsin static exchange interactions. These findings contribute to advancing the application of synthetic antiferromagneticstructures in magnonic devices.展开更多
Recently,Chern insulators in an antiferromagnetic(AFM)phase have been suggested theoretically and predicted in a few materials.However,the experimental observation of two-dimensional(2D)AFM quantum anomalous Hall effe...Recently,Chern insulators in an antiferromagnetic(AFM)phase have been suggested theoretically and predicted in a few materials.However,the experimental observation of two-dimensional(2D)AFM quantum anomalous Hall effect is still a challenge to date.In this work,we propose that an AFM Chern insulator can be realized in a 2D monolayer of NiOsCl_(6)modulated by a compressive strain.Strain modulation is accessible experimentally and used widely in predicting and tuning topological nontrivial phases.With first-principles calculations,we have investigated the structural,magnetic,and electronic properties of NiOsCl_(6).Its stability has been confirmed through molecular dynamical simulations,elasticity constant,and phonon spectrum.It has a collinear AFM order,with opposite magnetic moments of 1.3μBon each Ni/Os atom,respectively,and the Neel temperature is estimated to be 93 K.In the absence of strain,it functions as an AFM insulator with a direct gap with spin-orbital coupling included.Compressive strain will induce a transition from a normal insulator to a Chern insulator characterized by a Chern number C=1,with a band gap of about 30 meV.This transition is accompanied by a structural distortion.Remarkably,the Chern insulator phase persists within the 3%-10%compressive strain range,offering an alternative platform for the utilization of AFM materials in spintronic devices.展开更多
Systemically angular and planar transport investigations are performed in layered antiferromagnetic(AF)V_(5)S_(8).In this AF system,obvious anomalous Hall effect(AHE)is observed with a large Hall angle of 0.1 compared...Systemically angular and planar transport investigations are performed in layered antiferromagnetic(AF)V_(5)S_(8).In this AF system,obvious anomalous Hall effect(AHE)is observed with a large Hall angle of 0.1 compared to that in ferromagnetic(FM)system.It can persist to the temperatures above AF transition and exhibit strong angular field dependence.The phase diagram reveals various magnetic states by rotating the applied field.By analyzing the anisotropic transport behavior,magnon contributions are revealed and exhibit obvious angular dependence with a spin-flop vanishing line.The observed prominent planar Hall effect and anisotropic magnetoresisitivity exhibit two-fold systematical angular dependent oscillations.These behaviors are attributed to the scattering from spin–orbital coupling instead of nontrivial topological origin.Our results reveal anisotropic interactions of magnetism and electron in V5S8,suggesting potential opportunities for the AF spintronic sensor and devices.展开更多
We synthesize high-quality single crystal of CeGaSi by a Ga self-flux method and investigate its physical properties through magnetic susceptibility,specific heat and electrical resistivity measurements as well as hig...We synthesize high-quality single crystal of CeGaSi by a Ga self-flux method and investigate its physical properties through magnetic susceptibility,specific heat and electrical resistivity measurements as well as high pressure effect.Magnetic measurements reveal that an antiferromagnetic order develops below T_(m)~10.4 K with magnetic moments orientated in the ab plane.The enhanced electronic specific heat coefficient and the negative logarithmic slope in the resistivity of CeGaSi indicate that the title compound belongs to the family of Kondo system with heavy fermion ground states.The max magnetic entropy change-ΔS_(M)^(max)(μ_(0)H⊥c,μ_(0)H=7 T) around T_(m) is found to reach up to 11.85 J·kg^(-1)·K^(-1).Remarkably,both the antiferromagnetic transition temperature and-ln T behavior increase monotonically with pressure applied to 20 kbar(1 bar=10~5 Pa),indicating that much higher pressure will be needed to reach its quantum critical point.展开更多
A clear microscopic understanding of exchange bias is crucial for its application in magnetic recording, and further progress in this area is desired. Based on the results of our first-principles calculations and Mont...A clear microscopic understanding of exchange bias is crucial for its application in magnetic recording, and further progress in this area is desired. Based on the results of our first-principles calculations and Monte Carlo simulations,we present a theoretical proposal for a stacking-dependent exchange bias in two-dimensional compensated van der Waals ferromagnetic/antiferromagnetic bilayer heterostructures. The exchange bias effect emerges in stacking registries that accommodate inhomogeneous interlayer magnetic interactions between the ferromagnetic layer and different spin sublattices of the antiferromagnetic layer. Moreover, the on/off switching and polarity reversal of the exchange bias can be achieved by interlayer sliding, and the strength can be modulated using an external electric field. Our findings push the limits of exchange bias systems to extreme bilayer thickness in two-dimensional van der Waals heterostructures, potentially stimulating new experimental investigations and applications.展开更多
就Bethuel,Brezis和Helein提出的问题讨论了Planar Ferromagnets and Antiferromagnets泛函在H={u(x)=(sinf(r)|xx|,cosf(r))∈H1(B1,S2);f(0)=0,f(1)=2π,r=|x|}中的径向极小元的一些性质,其中包括此泛函的径向极小元的零点的分布及若...就Bethuel,Brezis和Helein提出的问题讨论了Planar Ferromagnets and Antiferromagnets泛函在H={u(x)=(sinf(r)|xx|,cosf(r))∈H1(B1,S2);f(0)=0,f(1)=2π,r=|x|}中的径向极小元的一些性质,其中包括此泛函的径向极小元的零点的分布及若干个上界估计,并给出了这一问题的肯定回答.展开更多
The study on temperature dependence of exchange bias field and coercivity is crucial to solving the writing/reading dilemma in magnetic recording.Motivated by recent experimental findings,a complete switch between exc...The study on temperature dependence of exchange bias field and coercivity is crucial to solving the writing/reading dilemma in magnetic recording.Motivated by recent experimental findings,a complete switch between exchange bias field and coercivity with temperature is proposed,and the performance,characterized by average switching temperature(T_(S))and switching temperature width(T_(W)),controlled by antiferromagnetic anisotropy(KAF)and exchange coupling(J_(AF))constants is studied based on a MonteCarlo simulation.The results show that a linear relationship between T_(S)and KAFis established when KAFis above a critical value,while T_(S)is weakly influenced by J_(AF).On the contrary,T_(W)is insensitive to KAF,while strongly depends on J_(AF).Besides overcoming thermal energy,the increase of KAFfor a small J_(AF)guarantees the completely frozen states in the antiferromagnetic layers during magnetizing at higher temperature,below which the exchange bias field exists with a negligible coercivity.Otherwise,for a large J_(AF),the uncompensated antiferromagnetic magnetization behavior during the ferromagnetic magnetization reversal becomes complicated,and the switching process in the low temperature range depends on the irreversibility of uncompensated antiferromagnetic magnetization reversal during magnetizing,while in the high temperature range mainly influenced by the field-cooling process,resulting in a large T_(W).This work provides an opportunity to control/optimize the performance of the temperatureinduced switch between unidirectional and uniaxial symmetries through precisely tuning KAFand/or J_(AF)to meet different application demands in the next generation information technology.展开更多
By use of the Hartree approximation and the method of multiple scales, we investigate quantum solitons and intrinsic localized modes in a one-dimensional antiferromagnetic chain. It is shown that there exist solitons ...By use of the Hartree approximation and the method of multiple scales, we investigate quantum solitons and intrinsic localized modes in a one-dimensional antiferromagnetic chain. It is shown that there exist solitons of two different quantum frequency bands： i.e., magnetic optical solitons and acoustic solitons. At the boundary of the Brillouin zone, these solitons becornc quantum intrinsic localized modes： their quantum eigenfrequencics are below the bottom of the harmonic optical frequency band and above the top of the harmonic acoustic frequency band.展开更多
Engineering the electronic band structure of material systems enables the unprecedented exploration of new physical properties that are absent in natural or as-synthetic materials.Electronic structures of bilayer two-...Engineering the electronic band structure of material systems enables the unprecedented exploration of new physical properties that are absent in natural or as-synthetic materials.Electronic structures of bilayer two-dimensional(2D)systems can be flexibly engineered by the external electric field.For example.展开更多
基金supported by the National Key Research and Development Program of China(Grant No.2022YFA1402203)the National Natural Science Foundations of China(Grant Nos.12174065 and 12104424)the Shanghai Municipal Science and Technology(Grant No.2019SHZDZX01)。
文摘In this work,Ga-doped Ce RhIn_(5) single crystals are grown by In/Ga flux method.Single-crystal X-ray diffraction,magnetic susceptibility,specific heat,and neutron diffraction measurements are utilized to characterize the sample quality and the antiferromagnetic transition temperature T_(N).By substituting In with Ga,T_(N) is slightly decreased,but the antiferromagnetic transition peaks in magnetic susceptibility and specific heat measurements are obviously broadened by external field along c-axis.By comparing with Zn-doped Ce RhIn_(5),it can be concluded that T_(N) is dominated by electron density,and the stiffness of antiferromagnetic transition is obviously reduced by Ga substitution.The substitution effects of Ga are possibly caused by forming heterogeneous local structures,which avoids quantum critical point,superconductivity,and non-Fermi liquid states.Investigations on Gadoped Ce RhIn_(5) help to comprehend the chemical substitution effects in Ce RhIn_(5),and the interaction between heterogeneous structure and long-range antiferromagnetic states.
基金supported by the National Key Projects for Research and Development of China(Grant Nos.2021YFA1400400 and 2024YFA1408104)the National Natural Science Foundation of China(Grant Nos.12434005,12374137,and 92165205).
文摘We investigate the origin of the 1/3 magnetization plateau in the S=1/2 kagome antiferromagnetic Heisenberg model using the variational Monte Carlo and exact diagonalization methods,to account for the recent experimental observations in YCu_(3)(OH)_(6+x)Br_(3-x)and YCu_(3)(OD)_(6+x)Br_(3-x).We identify three degenerate valencebond-solid(VBS)states forming a√3×√3 unit cell.These states exhibit David-star patterns in the spin moment distribution with only two fractional values-1/3 and 2/3,and are related through translational transformations.While the spin correlations in these VBS states are found to be short-range,resembling a quantum spin liquid,we show that they have a vanishing topological entanglement entropy and thus are topologically trivial many-body states.Our theoretical results provide strong evidence that the 1/3 magnetization plateau observed in recent experiments arises from these√3×√3 VBS states with fractional spin moments.
文摘High-quality antiferromagnetic(AFM)θ-phase manganese nitride(MnN)films were successfully grown on MgO(001)substrates by plasma-assisted molecular beam epitaxy.Structural analysis confirms the high-quality MnN film has a tetragonal distortion with a c/a ratio of~0.98.The film exhibits exceptional stability in both aqueous and ambient conditions,which is a crucial factor for practical applications.Electrical transport reveals its metallic behavior with an upturn at low temperatures,which could be attributed to the Kondo effect originated from nitrogen vacancy-induced magnetic impurities.Room temperature exchange bias has been demonstrated in a MnN/CoFeB heterostructure,verifying the AFM ordering of MnN.Considering its high Néel temperature~650 K,superior stability,and low-cost,this work highlights the epitaxial MnN films as a promising candidate for AFM spintronic applications.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.12435001,12304006,and 12404265)the Natural Science Foundation of Shanghai,China(Grant No.23JC1401400)+1 种基金the Fundamental Research Funds for the Central Universities of East China University,the Natural Science Foundation of WIUCAS(Grant No.WIUCASQD2023004)the Natural Science Foundation of Wenzhou(Grant No.L2023005)。
文摘Antiferromagnetic(AFM)spintronics have sparked extensive research interest in the field of information storage due to the considerable advantages offered by antiferromagnets,including non-volatile data storage,higher storage density,and accelerating data processing.However,the manipulation and detection of internal AFM order in antiferromagnets hinders their applications in spintronic devices.Here,we proposed a design idea for an AFM material that is self-assembled from one-dimensional(1D)ferromagnetic(FM)chains.To validate this idea,we screened a two-dimensional(2D)selfassembled CrBr_(2)antiferromagnet of an AFM semiconductor from a large amount of data.This 2D CrBr_(2)antiferromagnet is composed of 1D FM CrBr_(2)chains that are arranged in a staggered and parallel configuration.In this type of antiferromagnet,the write-data operation of information is achieved in 1D FM chains,followed by a self-assembly process driving the assembly of 1D FM chains into an antiferromagnet.These constituent 1D FM chains become decoupled by external perturbations,such as heat,pressure,strain,etc.,thereby realizing the read-data operation of information.We anticipate that this antiferromagnet,composed of 1D FM chains,can be realized not only in the 1D to 2D system,but also is expected to expand to 2D to three-dimensional(3D)system,and even 1D to 3D system.
基金supported by the National Natural Science Foundation of China (Grant No. 12174382)the Strategic Priority Research Program of the Chinese Academy of Sciences (Grant Nos. XDB0460000 and XDB28000000)the Innovation Program for Quantum Science and Technology (Grant Nos. 2024ZD0300104 and 2021ZD0302600)。
文摘The competition between dimensionality and ordering in multiferroic materials is of great interest for both fundamental physics and potential applications. Combining first-principles calculations with micromagnetic simulations, we investigate recently synthesized ultrathin perovskite bismuth ferrite(BFO) films. Our numerical results reveal that, at the monolayer limit, the ferroelectricity of BFO is missing because the octahedral distortions are constrained. However, the monolayer bismuth ferrite is a topological antiferromagnetic metal with tunable bimeron magnetic structure. The dual topologically non-trivial characteristics make monolayer bismuth ferrite a multifunctional building block in future spintronic devices.
文摘In this investigation,we delve into the interplay between strong interactions and intricate topological configurations,leading to emergent quantum states such as magnetic topological insulators.The crux of our research centers on elucidating how lattice symmetry modulates antiferromagnetic quantum Hall phenomena.Utilizing the spinful Harper-Hofstadter model enriched with a next-nearest-neighbor(NNN)hopping term,we discern a half-filling bandgap,paving the way for the manifestation of a quantum Hall insulator characterized by a Chern number,C=2.Upon integrating a checkerboardpatterned staggered potential(△)and the Hubbard interaction(U),the system exhibits complex dynamical behaviors.Marginal NNN hopping culminates in a Ne′el antiferromagnetic Mott insulator.In contrast,intensified hopping results in stripe antiferromagnetic configurations.Moreover,in the regime of limited NNN hopping,a C=1 Ne′el antiferromagnetic quantum Hall insulator emerges.A salient observation pertains to the manifestation of a C=1 antiferromagnetic quantum Hall insulator when spin-flip mechanisms are not offset by space group symmetries.These findings chart a pathway for further explorations into antiferromagnetic Quantum Hall States.
基金Project supported by the National Key R&D Program of China (Grant No. 2022YFA1403800)the National Natural Science Foundation of China (Grant Nos. 12250008 and 12188101)+1 种基金the Project for Young Scientists in Basic Research (Grant No. YSBR-059)performed in part at the Aspen Center for Physics, supported by the National Natural Science Foundation of China (Grant No. PHY2210452)。
文摘We theoretically study the effect of a uniform orbital magnetic field on spin waves in a triangular lattice tetrahedral antiferromagnetic insulator without spin–orbit coupling. Through symmetry analysis and microscopic calculation, we show that the optical spin wave mode at the Brillouin zone center can acquire a small orbital magnetic moment, although it exhibits no magnetic moment from the Zeeman coupling. Our results are potentially applicable to intercalated van der Waals materials and twisted double-bilayer graphene.
基金supported by the National Key R&D Program of China(Grant No.2022YFA1204100)the National Natural Science Foundation of China(Grant Nos.62488201 and 1240041502)+2 种基金the CAS Project for Young Scientists in Basic Research(Grant No.YSBR-003)the Chinese Academy of Sciences(Grant No.XDB33030100)the Innovation Program of Quantum Science and Technology(Grant No.2021ZD0302700).
文摘Vanadium-based transition metal chalcogenides VmXn(X=S,Se,Te)with their distinctive quantum effects,tunable magnetism,spin-orbit coupling,and high carrier mobility are a valuable platform to explore the interplay between magnetism and electronic correlations,especially with tunable structural phases and magnetic properties through stoichiometric variations,making them ideal candidates for advanced device applications.Here,we report the synthesis of high-quality V_(5+x)S_(8)single crystals with different concentrations of self-intercalated vanadium.V_(5+x)S_(8)crystals show an antiferromagnetic behavior and a spin-flop-like transition below TN of 30.6 K.The high-quality V_(5+x)S_(8)single crystals exhibit a large negative magnetoresistance of 12.3%at 2 K.Interestingly,V_(5+x)S_(8)crystals show an obvious low-temperature resistance upturn that gradually levels off with the increasing magnetic field,attributed to the Kondo effect arising from the interaction between conduction electrons and embedded vanadium magnetic impurities.With increasing V doping,the antiferromagnetic interactions intensify,weakening the coupling between the local moments and conduction electrons,which in turn lowers the Kondo temperature(TK).Furthermore,the anomalous Hall effect is observed in V5.73S8,with an anomalous Hall conductivity(AHC)of 50.46 W^(-1)·cm^(-1)and anomalous Hall angle of 0.73%at 2 K.Our findings offer valuable insights into the mechanisms of the Kondo effect and anomalous Hall effect in self-intercalated transition metal chalcogenides with complex magnetism and electronic correlation effects.
基金Project supported by the National Key Research and Development Program of China(Grant No.2022YFA1403202)the National Natural Science Foundation of China(Grant Nos.NSFC-12074335,11974095,5177115,11974095,and 12188101)the Natural Science Foundation of Shaanxi Province of China(Grant No.2022JM-028).
文摘Intercalated transition metal dichalcogenides(TMDCs)attract much attention due to their rich properties and potential applications.In this article,we grew successfully high-quality V_(1/3)TaS_(2) crystals by a vapor transport method.We measured the magnetization,longitudinal resistivityρxx(T,H),Hall resistivityρxy(T,H),as well as performed calculations of the electronic band structure.It was found that V_(1/3)TaS_(2) is an A-type antiferromagnet with the Neel temperature T_(N)=6.20 K,and exhibits a negative magnetoresistance(MR)near T_(N).Both band structure calculations and Hall resistivity measurements demonstrated it is a magnetic semimetal.
基金supported by the National Natural Science Foundation of China (Grant No. 52372003)the Funds from Beijing National Laboratory for Condensed Matter Physics
文摘Quasi-one-dimensional(1D)antiferromagnets are known to display intriguing phenomena especially when there is a spin gap in their spin-excitation spectra.Here we demonstrate that a spin gap exists in the quasi-1D Heisenberg antiferromagnet CoTi2O5 with highly ordered Co2+/Ti4+occupation,in which the Co2+ions with S=3/2 form a 1D spin chain along the a-axis.CoTi2O5 undergoes an antiferromagnetic transition at TN~24 K and exhibits obvious anisotropic magnetic susceptibility even in the paramagnetic region.Although a gapless magnetic ground state is usually expected in a quasi-1D Heisenberg antiferromagnet with half-integer spins,by analyzing the specific heat,the thermal conductivity,and the spin-lattice relaxation rate(1/T1)as a function of temperature,we found that a spin gap is opened in the spin-excitation spectrum of CoTi2O5 around TN,manifested by the rapid decrease of magnetic specific heat to zero,the double-peak characteristic in thermal conductivity,and the exponential decay of 1/T1 below TN.Both the magnetic measurements and the first-principles calculations results indicate that there is spin-orbit coupling in CoTi2O5,which induces the magnetic anisotropy in CoTi2O5,and then opens the spin gap at low temperature.
基金Project supported by the Natural Science Basic Research Program of Shaanxi(Program Nos.2023KJXX-064 and 2021JQ-748)the National Natural Science Foundation of China(Grant Nos.11804213 and 12174238)Scientific Research Foundation of Shaanxi University of Technology(Grant No.SLGRCQD2006).
文摘We study the coexistence of antiferromagnetism and unconventional superconductivity on the Creutz lattice which shows strictly flat bands in the noninteracting regime.The famous renormalized mean-field theory is used to deal with strong electron-electron repulsive Hubbard interaction in the effective low-energy t-J model,the superfluid weight of the unconventional superconducting state has been calculated via the linear response theory.An unconventional superconducting state with both spin-singlet and staggered spin-triplet pairs emerges beyond a critical antiferromagnetic coupling interaction,while antiferromagnetism accompanies this state.The superconducting state with only spin-singlet pairs is dominant with paramagnetic phase.The A phase is analogous to the pseudogap phase,which shows that electrons go to form pairs but do not cause a supercurrent.We also show the superfluid behavior of the unconventional superconducting state and its critical temperature.It is proven directly that the flat band can effectively raise the critical temperature of superconductivity.It is implementable to simulate and control strongly-correlated electrons'behavior on the Creutz lattice in the ultracold atoms experiment or other artificial structures.Our results may help the understanding of the interplay between unconventional superconductivity and magnetism.
基金National Key Research and De-velopment Program of China(Grant No.2023YFA1406603)the National Natural Science Foundation of China(Grant Nos.52071079,12274071,12374112,and T2394473)Jiangsu Funding Program for Excellent Postdoctoral Talent(Grant No.2023ZB491).
文摘The spin pumping effect in magnetic heterostructures and multilayers is a highly effective method for the generationand transmission of spin currents. In the increasingly prominent synthetic antiferromagnetic structures, the two ferromagneticlayers demonstrate in-phase and out-of-phase states, corresponding to acoustic and optical precession modes. Withinthis context, our study explores the spin pumping effect in Py/Ru/Py synthetic antiferromagnetic structures across differentmodes. The heightened magnetic damping resulting from the spin pumping effect in the in-phase state initially decreaseswith increasing Py thickness before stabilizing. Conversely, in the out-of-phase state, the amplified damping exceeds thatof the in-phase state, suggesting a greater spin relaxation within this configuration, which demonstrates sensitivity to alterationsin static exchange interactions. These findings contribute to advancing the application of synthetic antiferromagneticstructures in magnonic devices.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.12104183,52173283,and 62071200)the Natural Science Foundation of Shandong Province,China(Grant Nos.ZR2021MA040 and ZR2023MA091)+2 种基金the Taishan Scholar Program of Shandong Province,China(Grant No.ts20190939)the Independent Cultivation Program of Innovation Team of Jinan City(Grant No.2021GXRC043)supported by high-performance computing platform at University of Jinan。
文摘Recently,Chern insulators in an antiferromagnetic(AFM)phase have been suggested theoretically and predicted in a few materials.However,the experimental observation of two-dimensional(2D)AFM quantum anomalous Hall effect is still a challenge to date.In this work,we propose that an AFM Chern insulator can be realized in a 2D monolayer of NiOsCl_(6)modulated by a compressive strain.Strain modulation is accessible experimentally and used widely in predicting and tuning topological nontrivial phases.With first-principles calculations,we have investigated the structural,magnetic,and electronic properties of NiOsCl_(6).Its stability has been confirmed through molecular dynamical simulations,elasticity constant,and phonon spectrum.It has a collinear AFM order,with opposite magnetic moments of 1.3μBon each Ni/Os atom,respectively,and the Neel temperature is estimated to be 93 K.In the absence of strain,it functions as an AFM insulator with a direct gap with spin-orbital coupling included.Compressive strain will induce a transition from a normal insulator to a Chern insulator characterized by a Chern number C=1,with a band gap of about 30 meV.This transition is accompanied by a structural distortion.Remarkably,the Chern insulator phase persists within the 3%-10%compressive strain range,offering an alternative platform for the utilization of AFM materials in spintronic devices.
基金Project supported by the open research fund of Songshan Lake Materials Laboratory(Grant No.2021SLABFN11)the National Natural Science Foundation of China(Grant Nos.U2130101 and 92165204)+5 种基金Natural Science Foundation of Guangdong Province(Grant No.2022A1515010035)Guangzhou Basic and Applied Basic Research Foundation(Grant No.202201011798)the Open Project of Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices(Grant No.2022B1212010008)the Open Project of Key Laboratory of Optoelectronic Materials and Technologies(Grant No.OEMT-2023-ZTS-01)the National Key R&D Program of China(Grant Nos.2023YFF0718400 and 2023YFA1406500)(national)college students innovation and entrepreneurship training program,Sun Yat-sen University(Grant No.202310359).
文摘Systemically angular and planar transport investigations are performed in layered antiferromagnetic(AF)V_(5)S_(8).In this AF system,obvious anomalous Hall effect(AHE)is observed with a large Hall angle of 0.1 compared to that in ferromagnetic(FM)system.It can persist to the temperatures above AF transition and exhibit strong angular field dependence.The phase diagram reveals various magnetic states by rotating the applied field.By analyzing the anisotropic transport behavior,magnon contributions are revealed and exhibit obvious angular dependence with a spin-flop vanishing line.The observed prominent planar Hall effect and anisotropic magnetoresisitivity exhibit two-fold systematical angular dependent oscillations.These behaviors are attributed to the scattering from spin–orbital coupling instead of nontrivial topological origin.Our results reveal anisotropic interactions of magnetism and electron in V5S8,suggesting potential opportunities for the AF spintronic sensor and devices.
基金Project supported by the National Natural Science Foundation of China (Grant No. 12274440)the Strategic Priority Research Program (B) of the Chinese Academy of Sciences (Grant No. XDB33010100)+1 种基金the Fund from the Ministry of Science and Technology of China (Grant No. 2022YFA1403903)the Fund of the Synergetic Extreme Condition User Facility (SECUF)。
文摘We synthesize high-quality single crystal of CeGaSi by a Ga self-flux method and investigate its physical properties through magnetic susceptibility,specific heat and electrical resistivity measurements as well as high pressure effect.Magnetic measurements reveal that an antiferromagnetic order develops below T_(m)~10.4 K with magnetic moments orientated in the ab plane.The enhanced electronic specific heat coefficient and the negative logarithmic slope in the resistivity of CeGaSi indicate that the title compound belongs to the family of Kondo system with heavy fermion ground states.The max magnetic entropy change-ΔS_(M)^(max)(μ_(0)H⊥c,μ_(0)H=7 T) around T_(m) is found to reach up to 11.85 J·kg^(-1)·K^(-1).Remarkably,both the antiferromagnetic transition temperature and-ln T behavior increase monotonically with pressure applied to 20 kbar(1 bar=10~5 Pa),indicating that much higher pressure will be needed to reach its quantum critical point.
基金Project supported by the National Key Research and Development Program of China (Grant No.2019YFA0210004)the Strategic Priority Research Program of Chinese Academy of Sciences (Grant No.XDB30000000)+1 种基金the Fundamental Research Funds for the Central Universities (Grant No.WK3510000013)the National Supercomputing Center in Tianjin。
文摘A clear microscopic understanding of exchange bias is crucial for its application in magnetic recording, and further progress in this area is desired. Based on the results of our first-principles calculations and Monte Carlo simulations,we present a theoretical proposal for a stacking-dependent exchange bias in two-dimensional compensated van der Waals ferromagnetic/antiferromagnetic bilayer heterostructures. The exchange bias effect emerges in stacking registries that accommodate inhomogeneous interlayer magnetic interactions between the ferromagnetic layer and different spin sublattices of the antiferromagnetic layer. Moreover, the on/off switching and polarity reversal of the exchange bias can be achieved by interlayer sliding, and the strength can be modulated using an external electric field. Our findings push the limits of exchange bias systems to extreme bilayer thickness in two-dimensional van der Waals heterostructures, potentially stimulating new experimental investigations and applications.
文摘就Bethuel,Brezis和Helein提出的问题讨论了Planar Ferromagnets and Antiferromagnets泛函在H={u(x)=(sinf(r)|xx|,cosf(r))∈H1(B1,S2);f(0)=0,f(1)=2π,r=|x|}中的径向极小元的一些性质,其中包括此泛函的径向极小元的零点的分布及若干个上界估计,并给出了这一问题的肯定回答.
基金financially supported by the National Natural Science Foundation of China(No.11774045)the Joint Research Fund Liaoning-Shenyang National Laboratory for Materials Science(No.20180510008)。
文摘The study on temperature dependence of exchange bias field and coercivity is crucial to solving the writing/reading dilemma in magnetic recording.Motivated by recent experimental findings,a complete switch between exchange bias field and coercivity with temperature is proposed,and the performance,characterized by average switching temperature(T_(S))and switching temperature width(T_(W)),controlled by antiferromagnetic anisotropy(KAF)and exchange coupling(J_(AF))constants is studied based on a MonteCarlo simulation.The results show that a linear relationship between T_(S)and KAFis established when KAFis above a critical value,while T_(S)is weakly influenced by J_(AF).On the contrary,T_(W)is insensitive to KAF,while strongly depends on J_(AF).Besides overcoming thermal energy,the increase of KAFfor a small J_(AF)guarantees the completely frozen states in the antiferromagnetic layers during magnetizing at higher temperature,below which the exchange bias field exists with a negligible coercivity.Otherwise,for a large J_(AF),the uncompensated antiferromagnetic magnetization behavior during the ferromagnetic magnetization reversal becomes complicated,and the switching process in the low temperature range depends on the irreversibility of uncompensated antiferromagnetic magnetization reversal during magnetizing,while in the high temperature range mainly influenced by the field-cooling process,resulting in a large T_(W).This work provides an opportunity to control/optimize the performance of the temperatureinduced switch between unidirectional and uniaxial symmetries through precisely tuning KAFand/or J_(AF)to meet different application demands in the next generation information technology.
基金Project supported by the Natural Science Foundation of Hunan Province, China （Grant No 03JJY6008）.
文摘By use of the Hartree approximation and the method of multiple scales, we investigate quantum solitons and intrinsic localized modes in a one-dimensional antiferromagnetic chain. It is shown that there exist solitons of two different quantum frequency bands： i.e., magnetic optical solitons and acoustic solitons. At the boundary of the Brillouin zone, these solitons becornc quantum intrinsic localized modes： their quantum eigenfrequencics are below the bottom of the harmonic optical frequency band and above the top of the harmonic acoustic frequency band.
文摘Engineering the electronic band structure of material systems enables the unprecedented exploration of new physical properties that are absent in natural or as-synthetic materials.Electronic structures of bilayer two-dimensional(2D)systems can be flexibly engineered by the external electric field.For example.
