Purpose: To investigate dynamic changes and significance of lymphocyte subsets (T lymphocytes, B lymphocytes, NK cells and T cell subsets) of peripheral blood in patients with acute self-limited hepatitis B (AHB). Met...Purpose: To investigate dynamic changes and significance of lymphocyte subsets (T lymphocytes, B lymphocytes, NK cells and T cell subsets) of peripheral blood in patients with acute self-limited hepatitis B (AHB). Methods: Immune cells of peripheral blood were compared among 17 cases of self-limited acute hepatitis B patients, 36 patients with chronic hepatitis B (CHB) and 32 healthy controls by flow cytometry (FCM). CD4+/CD8+ was monitored dynamically, meanwhile relations between T lymphocyte subsets and ALT and clearance of HBV DNA were explored. Results: Dynamic changes of lymphocyte subsets were found in AHB, the level of CD3+T cells was significantly higher compared to CHB group and healthy control group. Frequencies of CD3+CD4+ T cells in the third and fourth week and CD4+/CD8+ in the second week were higher compared to other groups. Frequ- ency of NK cells was low and was significantly lower compared to other groups in the third week specially. It was showed that CD4+/CD8+ was low followed by high abnormal ALT during early stage by dynamic monitoring of CD4+/CD8+, and CD4+/CD8+ was increasing accompanied by normal ALT set by set, but CD4+/CD8+ had no significant relation to ALT and HBV DNA. Conclusion: Immune status of AHB, compared to CHB and healthy controls, was significantly different and dynamic changes of lymphocyte sub- sets may be related to progress of disease.展开更多
A narrowed Si_(0.7)Ge_(0.3)channel fin field-effect transistor(FinFET)device is demonstrated in detail by using an accuratecyclic wet treatment process.The Si_(0.7)Ge_(0.3)fin/per side of 0.63 nm in thickness can be a...A narrowed Si_(0.7)Ge_(0.3)channel fin field-effect transistor(FinFET)device is demonstrated in detail by using an accuratecyclic wet treatment process.The Si_(0.7)Ge_(0.3)fin/per side of 0.63 nm in thickness can be accurately removed in each cycleby utilizing a self-limited oxidation with 40%HNO_(3)solution in 40 s and oxidation removal can be achieved with 1%HFsolution in 10 s.As a result,after the dummy gate removal,the fin width of Si_(0.7)Ge_(0.3)can be narrowed from 20 nm to 8 nmby utilizing 10 cycles of this wet treatment process.Compared with the conventional Si_(0.7)Ge_(0.3)FinFET under a similarprocess,the narrowed Si_(0.7)Ge_(0.3)channel FinFET can realize a strong gate control capability by using this newly developedwet treatment process,because its subthreshold slope can be reduced by 24%,improving from 87 mV/dec to 64 mV/dec.展开更多
Metal–insulator–semiconductor(MOS) capacitor is a key structure for high performance MOS field transistors(MOSFETs), requiring low leakage current, high breakdown voltage, and low interface states. In this paper, β...Metal–insulator–semiconductor(MOS) capacitor is a key structure for high performance MOS field transistors(MOSFETs), requiring low leakage current, high breakdown voltage, and low interface states. In this paper, β-Ga_(2)O_(3) MOS capacitors were fabricated with ALD deposited Al_(2)O_(3) using H_(2)O or ozone(O_(3)) as precursors. Compared with the Al_(2)O_(3) gate dielectric with H_(2)O as ALD precursor, the leakage current for the O_(3) precursor case is decreased by two orders of magnitude, while it keeps the same level at the fixed charges, interface state density, and border traps. The SIMS tests show that Al_(2)O_(3) with O_(3) as precursor contains more carbon impurities. The current transport mechanism analysis suggests that the C–H complex in Al_(2)O_(3) with O_(3) precursor serves as deep energy trap to reduce the leakage current. These results indicate that the Al_(2)O_(3)/β-Ga_(2)O_(3)MOS capacitor using the O_(3) precursor has a low leakage current and holds potential for application in β-Ga_(2)O_(3) MOSFETs.展开更多
文摘Purpose: To investigate dynamic changes and significance of lymphocyte subsets (T lymphocytes, B lymphocytes, NK cells and T cell subsets) of peripheral blood in patients with acute self-limited hepatitis B (AHB). Methods: Immune cells of peripheral blood were compared among 17 cases of self-limited acute hepatitis B patients, 36 patients with chronic hepatitis B (CHB) and 32 healthy controls by flow cytometry (FCM). CD4+/CD8+ was monitored dynamically, meanwhile relations between T lymphocyte subsets and ALT and clearance of HBV DNA were explored. Results: Dynamic changes of lymphocyte subsets were found in AHB, the level of CD3+T cells was significantly higher compared to CHB group and healthy control group. Frequencies of CD3+CD4+ T cells in the third and fourth week and CD4+/CD8+ in the second week were higher compared to other groups. Frequ- ency of NK cells was low and was significantly lower compared to other groups in the third week specially. It was showed that CD4+/CD8+ was low followed by high abnormal ALT during early stage by dynamic monitoring of CD4+/CD8+, and CD4+/CD8+ was increasing accompanied by normal ALT set by set, but CD4+/CD8+ had no significant relation to ALT and HBV DNA. Conclusion: Immune status of AHB, compared to CHB and healthy controls, was significantly different and dynamic changes of lymphocyte sub- sets may be related to progress of disease.
基金Project supported by the Beijing Municipal Natural Science Foundation,China(Grant No.4202078).
文摘A narrowed Si_(0.7)Ge_(0.3)channel fin field-effect transistor(FinFET)device is demonstrated in detail by using an accuratecyclic wet treatment process.The Si_(0.7)Ge_(0.3)fin/per side of 0.63 nm in thickness can be accurately removed in each cycleby utilizing a self-limited oxidation with 40%HNO_(3)solution in 40 s and oxidation removal can be achieved with 1%HFsolution in 10 s.As a result,after the dummy gate removal,the fin width of Si_(0.7)Ge_(0.3)can be narrowed from 20 nm to 8 nmby utilizing 10 cycles of this wet treatment process.Compared with the conventional Si_(0.7)Ge_(0.3)FinFET under a similarprocess,the narrowed Si_(0.7)Ge_(0.3)channel FinFET can realize a strong gate control capability by using this newly developedwet treatment process,because its subthreshold slope can be reduced by 24%,improving from 87 mV/dec to 64 mV/dec.
基金Project supported in part by the Science and Technology Development Plan Project of Jilin Province, China (Grant No. YDZJ202303CGZH022)the National Key Research and Development Program of China (Grant No. 2024YFE0205300)+1 种基金the National Natural Science Foundation of China (Grant No. 62471504)the Open Fund of the State Key Laboratory of Optoelectronic Materials and Technologies (Sun Yat-Sen University) (Grant No. OEMT-2023KF-05)。
文摘Metal–insulator–semiconductor(MOS) capacitor is a key structure for high performance MOS field transistors(MOSFETs), requiring low leakage current, high breakdown voltage, and low interface states. In this paper, β-Ga_(2)O_(3) MOS capacitors were fabricated with ALD deposited Al_(2)O_(3) using H_(2)O or ozone(O_(3)) as precursors. Compared with the Al_(2)O_(3) gate dielectric with H_(2)O as ALD precursor, the leakage current for the O_(3) precursor case is decreased by two orders of magnitude, while it keeps the same level at the fixed charges, interface state density, and border traps. The SIMS tests show that Al_(2)O_(3) with O_(3) as precursor contains more carbon impurities. The current transport mechanism analysis suggests that the C–H complex in Al_(2)O_(3) with O_(3) precursor serves as deep energy trap to reduce the leakage current. These results indicate that the Al_(2)O_(3)/β-Ga_(2)O_(3)MOS capacitor using the O_(3) precursor has a low leakage current and holds potential for application in β-Ga_(2)O_(3) MOSFETs.
基金National Ministry of Science and Technology“13thFive-Year”Key Research and Development Program Sub Project for High Performance Computing(2016YFB0200205)2018 Shanghai Public R&D Service Center Construction Project(18DZ2295400)
