Metal–insulator–semiconductor(MOS) capacitor is a key structure for high performance MOS field transistors(MOSFETs), requiring low leakage current, high breakdown voltage, and low interface states. In this paper, β...Metal–insulator–semiconductor(MOS) capacitor is a key structure for high performance MOS field transistors(MOSFETs), requiring low leakage current, high breakdown voltage, and low interface states. In this paper, β-Ga_(2)O_(3) MOS capacitors were fabricated with ALD deposited Al_(2)O_(3) using H_(2)O or ozone(O_(3)) as precursors. Compared with the Al_(2)O_(3) gate dielectric with H_(2)O as ALD precursor, the leakage current for the O_(3) precursor case is decreased by two orders of magnitude, while it keeps the same level at the fixed charges, interface state density, and border traps. The SIMS tests show that Al_(2)O_(3) with O_(3) as precursor contains more carbon impurities. The current transport mechanism analysis suggests that the C–H complex in Al_(2)O_(3) with O_(3) precursor serves as deep energy trap to reduce the leakage current. These results indicate that the Al_(2)O_(3)/β-Ga_(2)O_(3)MOS capacitor using the O_(3) precursor has a low leakage current and holds potential for application in β-Ga_(2)O_(3) MOSFETs.展开更多
基金Project supported in part by the Science and Technology Development Plan Project of Jilin Province, China (Grant No. YDZJ202303CGZH022)the National Key Research and Development Program of China (Grant No. 2024YFE0205300)+1 种基金the National Natural Science Foundation of China (Grant No. 62471504)the Open Fund of the State Key Laboratory of Optoelectronic Materials and Technologies (Sun Yat-Sen University) (Grant No. OEMT-2023KF-05)。
文摘Metal–insulator–semiconductor(MOS) capacitor is a key structure for high performance MOS field transistors(MOSFETs), requiring low leakage current, high breakdown voltage, and low interface states. In this paper, β-Ga_(2)O_(3) MOS capacitors were fabricated with ALD deposited Al_(2)O_(3) using H_(2)O or ozone(O_(3)) as precursors. Compared with the Al_(2)O_(3) gate dielectric with H_(2)O as ALD precursor, the leakage current for the O_(3) precursor case is decreased by two orders of magnitude, while it keeps the same level at the fixed charges, interface state density, and border traps. The SIMS tests show that Al_(2)O_(3) with O_(3) as precursor contains more carbon impurities. The current transport mechanism analysis suggests that the C–H complex in Al_(2)O_(3) with O_(3) precursor serves as deep energy trap to reduce the leakage current. These results indicate that the Al_(2)O_(3)/β-Ga_(2)O_(3)MOS capacitor using the O_(3) precursor has a low leakage current and holds potential for application in β-Ga_(2)O_(3) MOSFETs.
基金National Ministry of Science and Technology“13thFive-Year”Key Research and Development Program Sub Project for High Performance Computing(2016YFB0200205)2018 Shanghai Public R&D Service Center Construction Project(18DZ2295400)
