Phosphor-in-glass(PiG)has been prepared into various types of phosphor films owing to its simplicity process,exceptional color purity,and convenient color adjustability.Nevertheless,existing reflective PiGs films have...Phosphor-in-glass(PiG)has been prepared into various types of phosphor films owing to its simplicity process,exceptional color purity,and convenient color adjustability.Nevertheless,existing reflective PiGs films have encountered limitations in terms of stability and feasibility as reliable color converters,mainly attributed to issues related to thermal deposition and insufficient optical efficiency.Herein,we propose to use AlN substrate with superior thermal conductivity to coat the TiO_(2) layer to obtain TiO_(2)-AlN(TA),which enhances the reflectivity of blue light to facilitate the light conversion process.By incorporating highly thermally stable LuAG:Ce-PiGs on a TA substrate,the LuAG:Ce-PiTA converter exhibits a luminous flux of 1102 lm@6.4 W,and maintains a relative intensity of 94.6%at 473 K benefiting from the high thermal conductivity of 34.1 W/(m·K).The addition of CASN_(3):Eu to the color converter 50 L&10C-PiTA enables an impressive CRI of 90.7.Relative lumine scence intensities of LuAG:Ce-PiTA and 50 L&10C-PiTA only decrease by 5.35%and 3.28%,respectively,in the 24 h illumination aging decay test of the reflective laser module.The results confirm the suitability of the optimally designed TA substrate for LuAG:Ce color converter applications in high-power reflective laser illumination.展开更多
We study the effect of the AlGaN interlayer on structural quality and strain engineering of the GaN films grown on SiC substrates with an AlN buffer layer, hnproved structural quality and tensile stress releasing are ...We study the effect of the AlGaN interlayer on structural quality and strain engineering of the GaN films grown on SiC substrates with an AlN buffer layer, hnproved structural quality and tensile stress releasing are realized in unintentionally doped GaN thin films grown on 6H-SiC substrates by metal organic chemical vapor deposition. Using the optimized AlGaN interlayer, we find that the full width at half maximum of x-ray diffraction peaks for GaN decreases dramatically, indicating an improved crystalline quality. Meanwhile, it is revealed that the biaxial tensile stress in the GaN film is significantly reduced from the Raman results. Photoluminescence spectra exhibit a shift of the peak position of the near-band-edge emission, as well as the integrated intensity ratio variation of the near-band-edge emission to the yellow luminescence band. Thus by optimizing the AlGaN interlayer, we could acquire the high-quality and strain-relaxation GaN epilayer with large thickness on SiC substrates.展开更多
文摘Phosphor-in-glass(PiG)has been prepared into various types of phosphor films owing to its simplicity process,exceptional color purity,and convenient color adjustability.Nevertheless,existing reflective PiGs films have encountered limitations in terms of stability and feasibility as reliable color converters,mainly attributed to issues related to thermal deposition and insufficient optical efficiency.Herein,we propose to use AlN substrate with superior thermal conductivity to coat the TiO_(2) layer to obtain TiO_(2)-AlN(TA),which enhances the reflectivity of blue light to facilitate the light conversion process.By incorporating highly thermally stable LuAG:Ce-PiGs on a TA substrate,the LuAG:Ce-PiTA converter exhibits a luminous flux of 1102 lm@6.4 W,and maintains a relative intensity of 94.6%at 473 K benefiting from the high thermal conductivity of 34.1 W/(m·K).The addition of CASN_(3):Eu to the color converter 50 L&10C-PiTA enables an impressive CRI of 90.7.Relative lumine scence intensities of LuAG:Ce-PiTA and 50 L&10C-PiTA only decrease by 5.35%and 3.28%,respectively,in the 24 h illumination aging decay test of the reflective laser module.The results confirm the suitability of the optimally designed TA substrate for LuAG:Ce color converter applications in high-power reflective laser illumination.
基金Supported by the National Key R&D Program of China under Grant No 2016YFB0400200
文摘We study the effect of the AlGaN interlayer on structural quality and strain engineering of the GaN films grown on SiC substrates with an AlN buffer layer, hnproved structural quality and tensile stress releasing are realized in unintentionally doped GaN thin films grown on 6H-SiC substrates by metal organic chemical vapor deposition. Using the optimized AlGaN interlayer, we find that the full width at half maximum of x-ray diffraction peaks for GaN decreases dramatically, indicating an improved crystalline quality. Meanwhile, it is revealed that the biaxial tensile stress in the GaN film is significantly reduced from the Raman results. Photoluminescence spectra exhibit a shift of the peak position of the near-band-edge emission, as well as the integrated intensity ratio variation of the near-band-edge emission to the yellow luminescence band. Thus by optimizing the AlGaN interlayer, we could acquire the high-quality and strain-relaxation GaN epilayer with large thickness on SiC substrates.
