The change of light output power of LEDs based on A1GalnP heterostructures with multiple quantum wells （590 nm and 630 nm） under irradiation by fast neutrons depends on the operating current density. It can be disti...The change of light output power of LEDs based on A1GalnP heterostructures with multiple quantum wells （590 nm and 630 nm） under irradiation by fast neutrons depends on the operating current density. It can be distinguished the regions of high, average and low electron injection. Operating current, this corresponds to the position of the boundary between the selected levels of the electron injection, increases with increasing neutron fluence. The final stage of the reducing process of the light output power under irradiation is the regime of low electron injection. The relative change in light output power depends on the operating current （operating current density） and can be described by a fairly simple equation. Established relations predict radiation resistance of LEDs, and it makes the most rational justification of operating modes of light-emitting diodes in terms of radiation resistance.展开更多
650 nm AlGaInP/GaInP laser diodes with compressively strained MQW active layer have been successfully fabricated by means of single epitaxy growth.The threshold current is 6.4 mA,at 40 mA CW operation,the fundamental ...650 nm AlGaInP/GaInP laser diodes with compressively strained MQW active layer have been successfully fabricated by means of single epitaxy growth.The threshold current is 6.4 mA,at 40 mA CW operation,the fundamental transverse-mode still remains,and the output power and the slope efficiency can reach 34 mW and 1.1 mW/mA respectively.The dead output power in CW operation can reach 66 mW at a saturation current of 88 mA.During 200 h burn in test,the laser diodes show good stabilization with a degradation of less than 8%.展开更多
设计并制备了三种不同集电结结构的A lG aInP/G aA s异质结双极晶体管,计算给出了三种集电结能带结构。通过对三种HBT的直流特性测试表明,N pN型HBT因异质集电结的导带尖峰出现电子阻挡效应;N p iN型HBT集电结引入i-G aA s层能有效克服...设计并制备了三种不同集电结结构的A lG aInP/G aA s异质结双极晶体管,计算给出了三种集电结能带结构。通过对三种HBT的直流特性测试表明,N pN型HBT因异质集电结的导带尖峰出现电子阻挡效应;N p iN型HBT集电结引入i-G aA s层能有效克服电子阻挡效应,同时还具有拐点电压Vknee小、开启电压Voffset小、击穿电压BVCEO大等优点,但由于i-G aA s层引入增加了基区电子扩散长度,使器件电流增益有所下降。展开更多
文摘The change of light output power of LEDs based on A1GalnP heterostructures with multiple quantum wells （590 nm and 630 nm） under irradiation by fast neutrons depends on the operating current density. It can be distinguished the regions of high, average and low electron injection. Operating current, this corresponds to the position of the boundary between the selected levels of the electron injection, increases with increasing neutron fluence. The final stage of the reducing process of the light output power under irradiation is the regime of low electron injection. The relative change in light output power depends on the operating current （operating current density） and can be described by a fairly simple equation. Established relations predict radiation resistance of LEDs, and it makes the most rational justification of operating modes of light-emitting diodes in terms of radiation resistance.
文摘650 nm AlGaInP/GaInP laser diodes with compressively strained MQW active layer have been successfully fabricated by means of single epitaxy growth.The threshold current is 6.4 mA,at 40 mA CW operation,the fundamental transverse-mode still remains,and the output power and the slope efficiency can reach 34 mW and 1.1 mW/mA respectively.The dead output power in CW operation can reach 66 mW at a saturation current of 88 mA.During 200 h burn in test,the laser diodes show good stabilization with a degradation of less than 8%.
文摘设计并制备了三种不同集电结结构的A lG aInP/G aA s异质结双极晶体管,计算给出了三种集电结能带结构。通过对三种HBT的直流特性测试表明,N pN型HBT因异质集电结的导带尖峰出现电子阻挡效应;N p iN型HBT集电结引入i-G aA s层能有效克服电子阻挡效应,同时还具有拐点电压Vknee小、开启电压Voffset小、击穿电压BVCEO大等优点,但由于i-G aA s层引入增加了基区电子扩散长度,使器件电流增益有所下降。
