To evaluate the effect of acute high-altitude exposure on sensory and short-term memory using interactive software,we transported 30 volunteers in a sport utility vehicle to a 4280 m plateau within3 h.We measured thei...To evaluate the effect of acute high-altitude exposure on sensory and short-term memory using interactive software,we transported 30 volunteers in a sport utility vehicle to a 4280 m plateau within3 h.We measured their memory performance on the plain（initial arrival）and 3 h after arrival on the plateau using six measures.展开更多
Polarization insensitive AlGaInAs InP semiconductor optical amplifier is realized at a wavelength of 1550nm.The active layer consists of three tensile strained wells with strain 0 40%.The amplifiers are fabricated ...Polarization insensitive AlGaInAs InP semiconductor optical amplifier is realized at a wavelength of 1550nm.The active layer consists of three tensile strained wells with strain 0 40%.The amplifiers are fabricated to ridge waveguide structure with 7° tilted cavity.The two facets are coated with two layers of anti reflection Ti 3O 5/Al 2O 3 films.Residual facet reflectivity is found to be less than 0 03%.The semiconductor optical amplifer exhibits 20dB of signal gain and 7 2dBm of saturation output power with an excellent polarization insensitivity (less than 0 8dB) at 200mA and 1540nm window.展开更多
基金supported by a grant from the National Science Foundation of China(No.81301134,81371444)a research program from the logistics department of PLA(No.CLZ15C005)
文摘To evaluate the effect of acute high-altitude exposure on sensory and short-term memory using interactive software,we transported 30 volunteers in a sport utility vehicle to a 4280 m plateau within3 h.We measured their memory performance on the plain（initial arrival）and 3 h after arrival on the plateau using six measures.
文摘Polarization insensitive AlGaInAs InP semiconductor optical amplifier is realized at a wavelength of 1550nm.The active layer consists of three tensile strained wells with strain 0 40%.The amplifiers are fabricated to ridge waveguide structure with 7° tilted cavity.The two facets are coated with two layers of anti reflection Ti 3O 5/Al 2O 3 films.Residual facet reflectivity is found to be less than 0 03%.The semiconductor optical amplifer exhibits 20dB of signal gain and 7 2dBm of saturation output power with an excellent polarization insensitivity (less than 0 8dB) at 200mA and 1540nm window.
