The transfer characteristics of amorphous indium-zinc-oxide thin film transistors are measured in the temperature range of 10-400K. The variation of electrical parameters （threshold voltage, field effect mobility, su...The transfer characteristics of amorphous indium-zinc-oxide thin film transistors are measured in the temperature range of 10-400K. The variation of electrical parameters （threshold voltage, field effect mobility, sub-threshold swing, and leafage current） with decreasing temperature are then extracted and analyzed. Moreover, the dom- inated carrier transport mechanisms at different temperature regions are investigated. The experimental data show that the carrier transport mechanism may change from trap-limited conduction to variable range hopping conduction at lower temperature. Moreover, the field effect mobilities are also extracted and simulated at various temperatures.展开更多
基金Supported by the National Natural Science Foundation of China under Grant No 61574048the Pearl River S&T Nova Program of Guangzhou under Grant No 201710010172+1 种基金the International Science and Technology Cooperation Program of Guangzhou under Grant No 201807010006the Opening Fund of Key Laboratory of Silicon Device Technology under Grant No KLSDTJJ2018-6
文摘The transfer characteristics of amorphous indium-zinc-oxide thin film transistors are measured in the temperature range of 10-400K. The variation of electrical parameters （threshold voltage, field effect mobility, sub-threshold swing, and leafage current） with decreasing temperature are then extracted and analyzed. Moreover, the dom- inated carrier transport mechanisms at different temperature regions are investigated. The experimental data show that the carrier transport mechanism may change from trap-limited conduction to variable range hopping conduction at lower temperature. Moreover, the field effect mobilities are also extracted and simulated at various temperatures.
