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Energy levels and radiative lifetimes of 3pns ~3p_0 and 3pnd ~3P_0 series of SiⅠ 被引量:1
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作者 梁良 周超 张玲 《Chinese Optics Letters》 SCIE EI CAS CSCD 2008年第11期804-806,共3页
The energy levels and lifetimes of 3pns ^3po (n = 7 - 35) and 3pnd ^3p0 (n = 6 - 17) series of neutral silicon are calculated and predicted by means of multichannel quantum defect theory (MQDT). In addition, the... The energy levels and lifetimes of 3pns ^3po (n = 7 - 35) and 3pnd ^3p0 (n = 6 - 17) series of neutral silicon are calculated and predicted by means of multichannel quantum defect theory (MQDT). In addition, the perturbation caused by core-excited state 3s3p^3 is discussed. The 3pnd ^3p0 series, especially 3p4d ^3p0, 3p5d ^3P0, and 3p6d ^3P0 are perturbed strongly by the core-excited state 3s3p3 ^3P0. These cause the lifetime of 3pnd ^3P0 (n = 5 - 7) to be less than that of 3p4d 3Po. The lifetimes of 3p14d ^3P0 (65479.14 cm^-1) and 3p16d ^3p0 (65608.77 cm^-1) are less than that of their frontal states respectively, because these states are perturbed by 3p22s ^3p0 (65476.48 cm-1) and 3p30s ^3p0 (65608.99 cm^-1) respectively. 展开更多
关键词 MQDT LIFE Energy levels and radiative lifetimes of 3pns and 3pnd series of Si
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