Silicon carbide offers distinct advantages in the field of power electronic devices.However,manufacturing processes remain a significant barrier to its widespread adoption.Polycrystalline SiC is less expensive and eas...Silicon carbide offers distinct advantages in the field of power electronic devices.However,manufacturing processes remain a significant barrier to its widespread adoption.Polycrystalline SiC is less expensive and easier to produce than single crystal.But stabilizing and controlling its performance are critical challenges that must be addressed urgently.Due to its material properties and excellent performance in applications,3C-SiC is gaining increasing attention in research.This article presents the electrical and material properties of a series of polycrystalline 3C-SiC samples and investigates their interrelationship.The samples were examined using TEM,which confirmed their polycrystalline structure.Combined with XRD and Raman spectroscopy,the grain orientations within the samples were analyzed,and the presence of stress was verified.EBSD was employed to statistically examine the grain structure and size across samples.For samples with similar doping levels,grain size is the most influential factor in determining electrical characteristics.Further EBSD measurements reveal the relationship between resistivity and grain size as log(ρ)=-1.93+8.67/d.These findings provide a foundation for the quantitative control and application of polycrystalline 3C-SiC.This work offers theoretical evidence for optimizing the performance tuning of 3C-SiC ceramics and enhancing their effectiveness in electronic applications.展开更多
Compared with sintered silicon carbides(SiC),highly-orientated 3C-SiC by CVD methods boast out-of-plane orientation uniformity,which ensures that such materials produce lower surface damage.Through the electrolytic in...Compared with sintered silicon carbides(SiC),highly-orientated 3C-SiC by CVD methods boast out-of-plane orientation uniformity,which ensures that such materials produce lower surface damage.Through the electrolytic in-process dressing(ELID)grinding technique,the differences in grinding behaviors between<110>and<111>-orientated 3C-SiC were investigated.Both highly-orientated 3C-SiC exhibited a grinding surface where brittle and ductile removal coexisted.Specifically,brittle removal regions were observed at grain boundaries,while ductile removal regions were observed within the grains.Further indentation experiments between the two 3C-SiC show that<111>-oriented 3C-SiC displays a larger critical cut depth of 28.99 nm,with 1.5 times higher than that of<110>-oriented 3C-SiC.The larger critical depth of cut contributes to more ductile removal regions with only a few brittle pits in the<111>-oriented 3C-SiC grinding surface.In addition,the subsurface deformation of<110>-oriented 3C-SiC was characterized by the presence of amorphous zones,dislocations and stacking faults.In contrast to the<111>-oriented,the<110>-oriented 3C-SiC tends to exhibit a brittle removal mode dominated by pits and cracks at the twin boundaries,as its pre-existing twins hinder the dislocation glide,resulting in stress concentration and thus forming cracks.展开更多
Highly oriented voids-free 3C-SiC heteroepitaxial layers are grown onφ50mm Si (100) substrates by low pressure chemical vapor deposition (LPCVD).The initial stage of carbonization and the surface morphology of carbon...Highly oriented voids-free 3C-SiC heteroepitaxial layers are grown onφ50mm Si (100) substrates by low pressure chemical vapor deposition (LPCVD).The initial stage of carbonization and the surface morphology of carbonization layers of Si (100) are studied using reflection high energy electron diffraction (RHEED) and scanning electron microscopy (SEM).It is shown that the optimized carbonization temperature for the growth of voids-free 3C-SiC on Si (100) substrates is 1100℃.The electrical properties of SiC layers are characterized using Van der Pauw method.The I-V,C-V,and the temperature dependence of I-V characteristics in n-3C-SiC/p-Si heterojunctions with AuGeNi and Al electrical pads are investigated.It is shown that the maximum reverse breakdown voltage of the n-3C-SiC/p-Si heterojunction diodes reaches to 220V at room temperature.These results indicate that the SiC/Si heterojunction diode can be used to fabricate the wide bandgap emitter SiC/Si heterojunction bipolar transistors (HBT's).展开更多
Single crystalline 3C-SiC epitaxial layers are grown on φ 50mm Si wafers by a new resistively heated CVD/LPCVD system,using SiH_4,C_2H_4 and H_2 as gas precursors.X-ray diffraction and Raman scattering measurements a...Single crystalline 3C-SiC epitaxial layers are grown on φ 50mm Si wafers by a new resistively heated CVD/LPCVD system,using SiH_4,C_2H_4 and H_2 as gas precursors.X-ray diffraction and Raman scattering measurements are used to investigate the crystallinity of the grown films.Electrical properties of the epitaxial 3C-SiC layers with thickness of 1～3μm are measured by Van der Pauw method.The improved Hall mobility reaches the highest value of 470cm 2/(V·s) at the carrier concentration of 7.7×10 17 cm -3 .展开更多
基金supported in part by the Major Science and Technology Innovation Project of Shandong Province under Grant 2022CXGC010103Taishan Scholars Program of Shandong Province under Grant tstp20231210。
文摘Silicon carbide offers distinct advantages in the field of power electronic devices.However,manufacturing processes remain a significant barrier to its widespread adoption.Polycrystalline SiC is less expensive and easier to produce than single crystal.But stabilizing and controlling its performance are critical challenges that must be addressed urgently.Due to its material properties and excellent performance in applications,3C-SiC is gaining increasing attention in research.This article presents the electrical and material properties of a series of polycrystalline 3C-SiC samples and investigates their interrelationship.The samples were examined using TEM,which confirmed their polycrystalline structure.Combined with XRD and Raman spectroscopy,the grain orientations within the samples were analyzed,and the presence of stress was verified.EBSD was employed to statistically examine the grain structure and size across samples.For samples with similar doping levels,grain size is the most influential factor in determining electrical characteristics.Further EBSD measurements reveal the relationship between resistivity and grain size as log(ρ)=-1.93+8.67/d.These findings provide a foundation for the quantitative control and application of polycrystalline 3C-SiC.This work offers theoretical evidence for optimizing the performance tuning of 3C-SiC ceramics and enhancing their effectiveness in electronic applications.
基金the Central Guidance on Local Science and Technology Development Fund of Hubei Province(No.2022BFE002)the Independent Innovation Projects of the Hubei Longzhong Laboratory(No.2022ZZ-06)the National Natural Science Foundation of China(Nos.52002075 and 62204179)。
文摘Compared with sintered silicon carbides(SiC),highly-orientated 3C-SiC by CVD methods boast out-of-plane orientation uniformity,which ensures that such materials produce lower surface damage.Through the electrolytic in-process dressing(ELID)grinding technique,the differences in grinding behaviors between<110>and<111>-orientated 3C-SiC were investigated.Both highly-orientated 3C-SiC exhibited a grinding surface where brittle and ductile removal coexisted.Specifically,brittle removal regions were observed at grain boundaries,while ductile removal regions were observed within the grains.Further indentation experiments between the two 3C-SiC show that<111>-oriented 3C-SiC displays a larger critical cut depth of 28.99 nm,with 1.5 times higher than that of<110>-oriented 3C-SiC.The larger critical depth of cut contributes to more ductile removal regions with only a few brittle pits in the<111>-oriented 3C-SiC grinding surface.In addition,the subsurface deformation of<110>-oriented 3C-SiC was characterized by the presence of amorphous zones,dislocations and stacking faults.In contrast to the<111>-oriented,the<110>-oriented 3C-SiC tends to exhibit a brittle removal mode dominated by pits and cracks at the twin boundaries,as its pre-existing twins hinder the dislocation glide,resulting in stress concentration and thus forming cracks.
文摘Highly oriented voids-free 3C-SiC heteroepitaxial layers are grown onφ50mm Si (100) substrates by low pressure chemical vapor deposition (LPCVD).The initial stage of carbonization and the surface morphology of carbonization layers of Si (100) are studied using reflection high energy electron diffraction (RHEED) and scanning electron microscopy (SEM).It is shown that the optimized carbonization temperature for the growth of voids-free 3C-SiC on Si (100) substrates is 1100℃.The electrical properties of SiC layers are characterized using Van der Pauw method.The I-V,C-V,and the temperature dependence of I-V characteristics in n-3C-SiC/p-Si heterojunctions with AuGeNi and Al electrical pads are investigated.It is shown that the maximum reverse breakdown voltage of the n-3C-SiC/p-Si heterojunction diodes reaches to 220V at room temperature.These results indicate that the SiC/Si heterojunction diode can be used to fabricate the wide bandgap emitter SiC/Si heterojunction bipolar transistors (HBT's).
文摘Single crystalline 3C-SiC epitaxial layers are grown on φ 50mm Si wafers by a new resistively heated CVD/LPCVD system,using SiH_4,C_2H_4 and H_2 as gas precursors.X-ray diffraction and Raman scattering measurements are used to investigate the crystallinity of the grown films.Electrical properties of the epitaxial 3C-SiC layers with thickness of 1～3μm are measured by Van der Pauw method.The improved Hall mobility reaches the highest value of 470cm 2/(V·s) at the carrier concentration of 7.7×10 17 cm -3 .
