Filler-reinforced polymer composites demonstrate pervasive applications due to their strengthened performances,multi-degree tunability,and ease of manufacturing.In thermal management field,polymer composites reinforce...Filler-reinforced polymer composites demonstrate pervasive applications due to their strengthened performances,multi-degree tunability,and ease of manufacturing.In thermal management field,polymer composites reinforced with thermally conductive fillers are widely adopted as thermal interface materials(TIMs).However,the three dimensional(3D)-stacked heterogenous integration of electronic devices has posed the problem that high-density heat sources are spatially distributed in the package.This situation puts forward new requirements for TIMs,where efficient heat dissipation channels must be established according to the specific distribution of discrete heat sources.To address this challenge,a 3D printing-assisted streamline orientation(3D-PSO)method was proposed to fabricate composite thermal materials with 3D programmable microstructures and orientations of fillers,which combines the shape-design capability of 3D printing and oriented control ability of fluid.The mechanism of fluid-based filler orientation control along streamlines was revealed by mechanical analysis of fillers in matrix.Thanks to the designed heat dissipation channels,composites showed better thermal and mechanical properties in comparison to random composites.Specifically,the thermal conductivity of 3D mesh-shape polydimethylsiloxane/liquid metal(PDMS/LM)composite was5.8 times that of random PDMS/LM composite under filler loading of 34.8 vol%.The thermal conductivity enhancement efficiency of 3D mesh-shape PDMS/carbon fibers composite reached101.05%under filler loading of 5.2 vol%.In the heat dissipation application of 3D-stacked chips,the highest chip temperature with 3D-PSO composite was 42.14℃lower than that with random composites.This is mainly attributed to the locally aggregated and oriented fillers'microstructure in fluid channels,which contributes to thermal percolation phenomena.The3D-PSO method exhibits excellent programmable design capabilities to adopt versatile distributions of heat sources,paving a new way to solve the complicated heat dissipation issue in 3D-stacked chips integration application.展开更多
DRAM作为计算机存储系统的核心组件,在HPC、云计算、AI等领域至关重要。然而,传统1T1C DRAM受电容缩放瓶颈、刷新功耗及制造复杂度等问题限制,难以满足先进制程需求。2T0C DRAM采用双晶体管架构,利用浮体效应、栅极耦合等机制存储电荷,...DRAM作为计算机存储系统的核心组件,在HPC、云计算、AI等领域至关重要。然而,传统1T1C DRAM受电容缩放瓶颈、刷新功耗及制造复杂度等问题限制,难以满足先进制程需求。2T0C DRAM采用双晶体管架构,利用浮体效应、栅极耦合等机制存储电荷,实现高密度、低功耗及工艺兼容性提升。本研究分析2T0C DRAM的技术原理、结构设计及其相较于1T1C DRAM的优势,探讨数据保持、读写干扰、工艺变异等挑战,并综述器件优化、电路创新及先进制造工艺的应对策略。此外,结合CIM、3D集成等趋势,探讨其在HPC、嵌入式及新型存储中的应用价值。当前,三星、美光等厂商已展开2T0C DRAM研发,预计未来逐步进入量产。随着半导体工艺演进,2T0C DRAM有望成为下一代高密度、低功耗存储技术。然而,量子效应、工艺适配及产业链完善仍是关键挑战。未来研究将聚焦器件微缩、存算一体及异质集成,推动2T0C DRAM发展与产业化进程。As a core component of computer memory systems, DRAM plays a critical role in HPC, cloud computing, and AI. However, traditional 1T1C DRAM faces challenges such as capacitor scaling limitations, high refresh power consumption, and increasing fabrication complexity, restricting its scalability in advanced process nodes. To address these issues, 2T0C DRAM adopts a two-transistor architecture, utilizing floating-body effects and gate coupling mechanisms to store charge, thereby enhancing storage density, reducing power consumption, and improving process compatibility. This study analyzes the technical principles and structural design of 2T0C DRAM, highlighting its advantages over 1T1C DRAM while addressing challenges such as data retention, read/write disturbances, and process variations. Various optimization strategies, including device engineering, circuit design innovations, and advanced fabrication techniques, are also reviewed. Furthermore, considering emerging trends like CIM and 3D integration, we explore the potential applications of 2T0C DRAM in HPC, embedded systems, and next-generation memory technologies. Currently, leading memory manufacturers such as Samsung and Micron have initiated research on 2T0C DRAM, with commercialization expected in the near future. With the continuous advancement of semiconductor technology, 2T0C DRAM is poised to become a key candidate for next-generation high-density, low-power memory solutions. However, challenges such as quantum effects, process adaptation, and supply chain maturity remain critical. Future research will focus on device scaling, in-memory computing, and heterogeneous integration to accelerate the development and industrialization of 2T0C DRAM.展开更多
在DDR2称雄市场一年半之后，新一代的内存技术——DDR3替代DDR2内存的历史进程正式开始。作为DDR（Double Data Rate）类型DRAM内存的第三代产品，DDR3在PC领域几乎没有挑战者，它可以顺利地与Intel P35 Express芯片组主板配合使用。革...在DDR2称雄市场一年半之后，新一代的内存技术——DDR3替代DDR2内存的历史进程正式开始。作为DDR（Double Data Rate）类型DRAM内存的第三代产品，DDR3在PC领域几乎没有挑战者，它可以顺利地与Intel P35 Express芯片组主板配合使用。革命性的技术提升，使之与DDR2相比，核心频率大幅提升。本文将以奇梦达（Qimonda）公司的产品为例，介绍DDR3的最新发展情况（见图1）。展开更多
基金supported by the National Natural Science Foundation of China(Grant No.52106089)the National Key R&D Project from Ministry of Science and Technology of China(Grant No.2022YFA1203100)。
文摘Filler-reinforced polymer composites demonstrate pervasive applications due to their strengthened performances,multi-degree tunability,and ease of manufacturing.In thermal management field,polymer composites reinforced with thermally conductive fillers are widely adopted as thermal interface materials(TIMs).However,the three dimensional(3D)-stacked heterogenous integration of electronic devices has posed the problem that high-density heat sources are spatially distributed in the package.This situation puts forward new requirements for TIMs,where efficient heat dissipation channels must be established according to the specific distribution of discrete heat sources.To address this challenge,a 3D printing-assisted streamline orientation(3D-PSO)method was proposed to fabricate composite thermal materials with 3D programmable microstructures and orientations of fillers,which combines the shape-design capability of 3D printing and oriented control ability of fluid.The mechanism of fluid-based filler orientation control along streamlines was revealed by mechanical analysis of fillers in matrix.Thanks to the designed heat dissipation channels,composites showed better thermal and mechanical properties in comparison to random composites.Specifically,the thermal conductivity of 3D mesh-shape polydimethylsiloxane/liquid metal(PDMS/LM)composite was5.8 times that of random PDMS/LM composite under filler loading of 34.8 vol%.The thermal conductivity enhancement efficiency of 3D mesh-shape PDMS/carbon fibers composite reached101.05%under filler loading of 5.2 vol%.In the heat dissipation application of 3D-stacked chips,the highest chip temperature with 3D-PSO composite was 42.14℃lower than that with random composites.This is mainly attributed to the locally aggregated and oriented fillers'microstructure in fluid channels,which contributes to thermal percolation phenomena.The3D-PSO method exhibits excellent programmable design capabilities to adopt versatile distributions of heat sources,paving a new way to solve the complicated heat dissipation issue in 3D-stacked chips integration application.
文摘DRAM作为计算机存储系统的核心组件,在HPC、云计算、AI等领域至关重要。然而,传统1T1C DRAM受电容缩放瓶颈、刷新功耗及制造复杂度等问题限制,难以满足先进制程需求。2T0C DRAM采用双晶体管架构,利用浮体效应、栅极耦合等机制存储电荷,实现高密度、低功耗及工艺兼容性提升。本研究分析2T0C DRAM的技术原理、结构设计及其相较于1T1C DRAM的优势,探讨数据保持、读写干扰、工艺变异等挑战,并综述器件优化、电路创新及先进制造工艺的应对策略。此外,结合CIM、3D集成等趋势,探讨其在HPC、嵌入式及新型存储中的应用价值。当前,三星、美光等厂商已展开2T0C DRAM研发,预计未来逐步进入量产。随着半导体工艺演进,2T0C DRAM有望成为下一代高密度、低功耗存储技术。然而,量子效应、工艺适配及产业链完善仍是关键挑战。未来研究将聚焦器件微缩、存算一体及异质集成,推动2T0C DRAM发展与产业化进程。As a core component of computer memory systems, DRAM plays a critical role in HPC, cloud computing, and AI. However, traditional 1T1C DRAM faces challenges such as capacitor scaling limitations, high refresh power consumption, and increasing fabrication complexity, restricting its scalability in advanced process nodes. To address these issues, 2T0C DRAM adopts a two-transistor architecture, utilizing floating-body effects and gate coupling mechanisms to store charge, thereby enhancing storage density, reducing power consumption, and improving process compatibility. This study analyzes the technical principles and structural design of 2T0C DRAM, highlighting its advantages over 1T1C DRAM while addressing challenges such as data retention, read/write disturbances, and process variations. Various optimization strategies, including device engineering, circuit design innovations, and advanced fabrication techniques, are also reviewed. Furthermore, considering emerging trends like CIM and 3D integration, we explore the potential applications of 2T0C DRAM in HPC, embedded systems, and next-generation memory technologies. Currently, leading memory manufacturers such as Samsung and Micron have initiated research on 2T0C DRAM, with commercialization expected in the near future. With the continuous advancement of semiconductor technology, 2T0C DRAM is poised to become a key candidate for next-generation high-density, low-power memory solutions. However, challenges such as quantum effects, process adaptation, and supply chain maturity remain critical. Future research will focus on device scaling, in-memory computing, and heterogeneous integration to accelerate the development and industrialization of 2T0C DRAM.
文摘在DDR2称雄市场一年半之后，新一代的内存技术——DDR3替代DDR2内存的历史进程正式开始。作为DDR（Double Data Rate）类型DRAM内存的第三代产品，DDR3在PC领域几乎没有挑战者，它可以顺利地与Intel P35 Express芯片组主板配合使用。革命性的技术提升，使之与DDR2相比，核心频率大幅提升。本文将以奇梦达（Qimonda）公司的产品为例，介绍DDR3的最新发展情况（见图1）。
