In order to solve the problem that the testing cost of the three-dimensional integrated circuit(3D IC)is too high,an optimal stacking order scheme is proposed to reduce the mid-bond test cost.A new testing model is bu...In order to solve the problem that the testing cost of the three-dimensional integrated circuit(3D IC)is too high,an optimal stacking order scheme is proposed to reduce the mid-bond test cost.A new testing model is built with the general consideration of both the test time for automatic test equipment(ATE)and manufacturing failure factors.An algorithm for testing cost and testing order optimization is proposed,and the minimum testing cost and optimized stacking order can be carried out by taking testing bandwidth and testing power as constraints.To prove the influence of the optimal stacking order on testing costs,two baselines stacked in sequential either in pyramid type or in inverted pyramid type are compared.Based on the benchmarks from ITC 02,experimental results show that for a 5-layer 3D IC,under different constraints,the optimal stacking order can reduce the test costs on average by 13%and 62%,respectively,compared to the pyramid type and inverted pyramid type.Furthermore,with the increase of the stack size,the test costs of the optimized stack order can be decreased.展开更多
Many 3D IC applications such as MEMS and RF systems require Through-Silicon Via （TSV） with operations for high-speed vertical communication. In this paper, we introduce a novel air-gap coaxial TSV that is suiTab, fo...Many 3D IC applications such as MEMS and RF systems require Through-Silicon Via （TSV） with operations for high-speed vertical communication. In this paper, we introduce a novel air-gap coaxial TSV that is suiTab, for such RF applications. Firstly, the detailed fabrication process is described to explain how to acquire such a structure. Then, an Resistor Inductance Conductance Capacitance （RLGC） model is developed to profile the transverse electromagnetic field effect of the proposed air-gap TSV. The model is further verified by a 3D field solver program through the S-parameter comparison. With reference to the numerically simulated results, this analytical model delivers a maximum deviation of less than 6%0, on the conditions of varying diameters, outer to inner radius ratios, and SU-8 central angles, etc. Taking advantages of scalability of the model, a number of air-gap-based TSV designs are simulated, providing 1.6-4.0 times higher bandwidth than the con- ventional coaxial TSVs and leading to an efficient high frequency vertical RF interconnection solution for 3D ICs.展开更多
Three-dimensional integrated circuit technology with transistors stacked on top of one an-other in multi-layer silicon film has always been a vision in the future technology direction. While the idea is simple, the te...Three-dimensional integrated circuit technology with transistors stacked on top of one an-other in multi-layer silicon film has always been a vision in the future technology direction. While the idea is simple, the technique to obtain high performance multi-layer transistors is extraordinarily diffi-cult. Not until recently does such technology become feasible. In this paper, the background and vari-ous techniques to form three-dimensional circuits will be reviewed. Recent development of a simple and promising technology to achieve three-dimensional integration using Metal-Induced-Lateral-Crystalliza-tion will be described. Preliminary results of 3D inverters will also be provided to demonstrate the viabil-ity for 3D integration.展开更多
Monolithic three-dimensional integrated circuits(M3D ICs)have emerged as an innovative solution to overcome the limitations of traditional 2D scaling,offering improved performance,reduced power consumption,and enhance...Monolithic three-dimensional integrated circuits(M3D ICs)have emerged as an innovative solution to overcome the limitations of traditional 2D scaling,offering improved performance,reduced power consumption,and enhanced functionality.Inter-layer vias(ILVs),crucial components of M3D ICs,provide vertical connectivity between layers but are susceptible to manufacturing and operational defects,such as stuck-at faults(SAFs),shorts,and opens,which can compromise system reliability.These challenges necessitate advanced built-in self-test(BIST)methodologies to ensure robust fault detection and localization while minimizing the testing overhead.In this paper,we introduce a novel BIST architecture tailored to efficiently detect ILV defects,particularly in irregularly positioned ILVs,and approximately localize them within clusters,using a walking pattern approach.In the proposed BIST framework,ILVs are grouped according to the probability of fault occurrence,enabling efficient detection of all SAFs and bridging faults(BFs)and most multiple faults within each cluster.This strategy empowers designers to fine-tune fault coverage,localization precision,and test duration to meet specific design requirements.The new BIST method addresses a critical shortcoming of existing solutions by significantly reducing the number of test configurations and overall test time using multiple ILV clusters.The method also enhances efficiency in terms of area and hardware utilization,particularly for larger circuit benchmarks.For instance,in the LU32PEENG benchmark,where ILVs are divided into 64 clusters,the power,area,and hardware overheads are minimized to 0.82%,1.03%,and 1.14%,respectively.展开更多
Metallic carbon nanotubes （CNTs） have been proposed as a promising alternative to Cu interconnects in future integrated circuits （ICs） for their remarkable conductive, mechanical and thermal properties. Compact eq...Metallic carbon nanotubes （CNTs） have been proposed as a promising alternative to Cu interconnects in future integrated circuits （ICs） for their remarkable conductive, mechanical and thermal properties. Compact equiv alent circuit models for single-walled carbon nanotube （SWCNT） bundles are described, and the performance of SWCNT bundle interconnects is evaluated and compared with traditional Cu interconnects at different interconnect levels for through-silicon-via-based three dimensional （3D） ICs. It is shown that at a local level, CNT interconnects exhibit lower signal delay and smaller optimal wire size. At intermediate and global levels, the delay improvement becomes more significant with technology scaling and increasing wire lengths. For 1 mm intermediate and 10 mm global level interconnects, the delay of SWCNT bundles is only 49.49% and 52.82% that of the Cu wires, respec tively.展开更多
基金The National Natural Science Foundation of China(No.61674048,61574052,61474036,61371025)the Project of Anhui Institute of Economics and Management(No.YJKT1417T01)
文摘In order to solve the problem that the testing cost of the three-dimensional integrated circuit(3D IC)is too high,an optimal stacking order scheme is proposed to reduce the mid-bond test cost.A new testing model is built with the general consideration of both the test time for automatic test equipment(ATE)and manufacturing failure factors.An algorithm for testing cost and testing order optimization is proposed,and the minimum testing cost and optimized stacking order can be carried out by taking testing bandwidth and testing power as constraints.To prove the influence of the optimal stacking order on testing costs,two baselines stacked in sequential either in pyramid type or in inverted pyramid type are compared.Based on the benchmarks from ITC 02,experimental results show that for a 5-layer 3D IC,under different constraints,the optimal stacking order can reduce the test costs on average by 13%and 62%,respectively,compared to the pyramid type and inverted pyramid type.Furthermore,with the increase of the stack size,the test costs of the optimized stack order can be decreased.
基金Sponsored by the National Natural Science Foundation of China(No.61271149)
文摘Many 3D IC applications such as MEMS and RF systems require Through-Silicon Via （TSV） with operations for high-speed vertical communication. In this paper, we introduce a novel air-gap coaxial TSV that is suiTab, for such RF applications. Firstly, the detailed fabrication process is described to explain how to acquire such a structure. Then, an Resistor Inductance Conductance Capacitance （RLGC） model is developed to profile the transverse electromagnetic field effect of the proposed air-gap TSV. The model is further verified by a 3D field solver program through the S-parameter comparison. With reference to the numerically simulated results, this analytical model delivers a maximum deviation of less than 6%0, on the conditions of varying diameters, outer to inner radius ratios, and SU-8 central angles, etc. Taking advantages of scalability of the model, a number of air-gap-based TSV designs are simulated, providing 1.6-4.0 times higher bandwidth than the con- ventional coaxial TSVs and leading to an efficient high frequency vertical RF interconnection solution for 3D ICs.
文摘Three-dimensional integrated circuit technology with transistors stacked on top of one an-other in multi-layer silicon film has always been a vision in the future technology direction. While the idea is simple, the technique to obtain high performance multi-layer transistors is extraordinarily diffi-cult. Not until recently does such technology become feasible. In this paper, the background and vari-ous techniques to form three-dimensional circuits will be reviewed. Recent development of a simple and promising technology to achieve three-dimensional integration using Metal-Induced-Lateral-Crystalliza-tion will be described. Preliminary results of 3D inverters will also be provided to demonstrate the viabil-ity for 3D integration.
文摘Monolithic three-dimensional integrated circuits(M3D ICs)have emerged as an innovative solution to overcome the limitations of traditional 2D scaling,offering improved performance,reduced power consumption,and enhanced functionality.Inter-layer vias(ILVs),crucial components of M3D ICs,provide vertical connectivity between layers but are susceptible to manufacturing and operational defects,such as stuck-at faults(SAFs),shorts,and opens,which can compromise system reliability.These challenges necessitate advanced built-in self-test(BIST)methodologies to ensure robust fault detection and localization while minimizing the testing overhead.In this paper,we introduce a novel BIST architecture tailored to efficiently detect ILV defects,particularly in irregularly positioned ILVs,and approximately localize them within clusters,using a walking pattern approach.In the proposed BIST framework,ILVs are grouped according to the probability of fault occurrence,enabling efficient detection of all SAFs and bridging faults(BFs)and most multiple faults within each cluster.This strategy empowers designers to fine-tune fault coverage,localization precision,and test duration to meet specific design requirements.The new BIST method addresses a critical shortcoming of existing solutions by significantly reducing the number of test configurations and overall test time using multiple ILV clusters.The method also enhances efficiency in terms of area and hardware utilization,particularly for larger circuit benchmarks.For instance,in the LU32PEENG benchmark,where ILVs are divided into 64 clusters,the power,area,and hardware overheads are minimized to 0.82%,1.03%,and 1.14%,respectively.
基金supported by the National Natural Science Foundation of China(Nos.61234002,61006028,61204044)the National High-Tech Program of China(Nos.2012AA012302,2013AA011203)
文摘Metallic carbon nanotubes （CNTs） have been proposed as a promising alternative to Cu interconnects in future integrated circuits （ICs） for their remarkable conductive, mechanical and thermal properties. Compact equiv alent circuit models for single-walled carbon nanotube （SWCNT） bundles are described, and the performance of SWCNT bundle interconnects is evaluated and compared with traditional Cu interconnects at different interconnect levels for through-silicon-via-based three dimensional （3D） ICs. It is shown that at a local level, CNT interconnects exhibit lower signal delay and smaller optimal wire size. At intermediate and global levels, the delay improvement becomes more significant with technology scaling and increasing wire lengths. For 1 mm intermediate and 10 mm global level interconnects, the delay of SWCNT bundles is only 49.49% and 52.82% that of the Cu wires, respec tively.
