A high-quality Ga2O3 thin film is deposited on an SiC substrate to form a heterojunction structure. The band alignment of the Ga2O3/6H-SiC heterojunction is studied by using synchrotron radiation photoelectron spectro...A high-quality Ga2O3 thin film is deposited on an SiC substrate to form a heterojunction structure. The band alignment of the Ga2O3/6H-SiC heterojunction is studied by using synchrotron radiation photoelectron spectroscopy, The energy band diagram of the Ga2O3/6H-SiC heterojunction is obtained by analysing the binding energies of Ga 3d and Si 2p at the surface and the interface of the heterojunction. The valence band offset is experimentally determined to be 2.8 eV and the conduction band offset is calculated to be 0.89 eV, which indicate a type-II band alignment. This provides useful guidance for the application of Ga2O3/6H-SiC electronic devices.展开更多
In this paper, a new idea of reconfigurable 3/6 dB branch line coupler is proposed. The proposed coupler is tuned through a simple open and short circuit at the coupler’s branches’ edges. At the short edges case, a ...In this paper, a new idea of reconfigurable 3/6 dB branch line coupler is proposed. The proposed coupler is tuned through a simple open and short circuit at the coupler’s branches’ edges. At the short edges case, a 3 dB branch line coupler is obtained. In this case, the coupler’s branches are considered as microstrip transmission lines with 0.3 mm slot width which is etched in each coupler’s branch. At the open edges case, the coupler’s branches are considered as asymmetric coupled microstrip lines. In this case, a 6 dB branch line coupler is obtained. Both CST and IE3D simulators are used to optimize the reconfigurable 3/6 dB branch line coupler dimensions. As a prototypes, two BLCs are designed, analyzed and tested at the “on” and “off” states at 2.5 GHz. The measured S-parameters confirm the proposed concept of the reconfigurable 3/6 dB branch line coupler.展开更多
基金supported by the National Natural Science Foundation of China(Grant Nos.50702071 and 50772122)the Young Scientists Fund of the National Natural Science Foundation of China(Grant No.51002176)
文摘A high-quality Ga2O3 thin film is deposited on an SiC substrate to form a heterojunction structure. The band alignment of the Ga2O3/6H-SiC heterojunction is studied by using synchrotron radiation photoelectron spectroscopy, The energy band diagram of the Ga2O3/6H-SiC heterojunction is obtained by analysing the binding energies of Ga 3d and Si 2p at the surface and the interface of the heterojunction. The valence band offset is experimentally determined to be 2.8 eV and the conduction band offset is calculated to be 0.89 eV, which indicate a type-II band alignment. This provides useful guidance for the application of Ga2O3/6H-SiC electronic devices.
文摘In this paper, a new idea of reconfigurable 3/6 dB branch line coupler is proposed. The proposed coupler is tuned through a simple open and short circuit at the coupler’s branches’ edges. At the short edges case, a 3 dB branch line coupler is obtained. In this case, the coupler’s branches are considered as microstrip transmission lines with 0.3 mm slot width which is etched in each coupler’s branch. At the open edges case, the coupler’s branches are considered as asymmetric coupled microstrip lines. In this case, a 6 dB branch line coupler is obtained. Both CST and IE3D simulators are used to optimize the reconfigurable 3/6 dB branch line coupler dimensions. As a prototypes, two BLCs are designed, analyzed and tested at the “on” and “off” states at 2.5 GHz. The measured S-parameters confirm the proposed concept of the reconfigurable 3/6 dB branch line coupler.
